• Title/Summary/Keyword: Ion assisted beam

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Formation of Silicon nanocrystallites by ion beam assisted electron beam deposition

  • Won Chel Choi
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.68-69
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    • 1998
  • Nano-crystalline silicon(nc-Si) thin films were directly depposited by ion beam assisted electron beam depposition (IBAED) method. The visibe luminescence in IBAED sampples were originated from not an oxygen bond but Si nano-crystallites. And we can conclude that the ion beam would be contribute to the suppression of the Si-O bond formation.

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Study of a MgO Protective Layer Deposited with Oxygen Ion Beam Assisted Deposition in an AC PDP (Oxygen Ion Beam Assisted Deposition법에 의해 형성된 AC PDP용 MgO 보호막의 특성 연구)

  • Kwon, Sang-Jik;Li, Zhao-Hui
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.7
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    • pp.615-619
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    • 2007
  • MgO layer plays an important role for plasma display panels (PDPs). In this experiment, ion beam assisted deposition (IBAD) methode was uesed to deposit a MgO thin film and the assisting oxygen ion beam energy was varied from 100 eV to 500 eV. In order to investigate the relationship between the secondary electron emission and the defect levels of the MgO layer, we measured the cathodoluminescence (CL) spectra of the MgO thin films, and we analyzed the CL peak intensity and peak transition. The results showed that the assisting ion beam energy played an important role in the peak intensity and the peak transition of the CL spectrum. The properties of MgO thin film were also analyzed using XRD and SEM, these results showed the assisting ion beam energy had direct effect on characteristics of MgO thin film.

A study on an experimental basis a special quality character of thin film use in order to TiN a conditioned immersion (TiN증착 조건에 따른 박막의 특성에 대한 실험적 연구)

  • Park, Il-Soo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.11
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    • pp.4711-4717
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    • 2011
  • Formation of TiN films by PVD method and the DC and RF sputtering deposition method can be applied, the injected gas to generate plasma ionization rate of the film forming speed is slow away, anything to increase the adhesion between films limitations have. To improve this, to investigate the deposition and ion beam evaporation simultaneously IBAD(Ion beam assisted deposition) when used, Ion beam surface coating material prior to the survey because the surface cleaning effect of a large, high film adhesion can be obtained. In addition, the high vacuum and low temperature, high purity thin film of uniform thickness in the benefits is.

Surface energy change and hydrophilic formation of PE, PS and PTFE films modification by hydrogen ion assisted reaction

  • Jung Cho;Ki Hyun;Koh, Seok-Keun
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.202-202
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    • 1999
  • The Polyethylene (PE), Polystyrene (PS) and Polytetrafluoroethylene (PTFE) surface modification was investigated by hydrogen io assisted reaction (H-IAR) in oxygen environment. The IAR is a kind of surface modification techniques using ion beam irradiation in reactive gas environment. The energy of hydrogen ion beam was fixed at 1keV, io dose was varied from 5$\times$1014 to 1$\times$1017 ions/$\textrm{cm}^2$, and amount of oxygen blowing gas was fixed 4ml/min. Wettability was measured by water contact angles measurement, and the surface functionality was analyzed by x-ray photoelectron spectroscopy. The contact angle of water on PE modified by argon ion beam only decrease from 95$^{\circ}$ to 52$^{\circ}$, and surface energy was not changed significantly. But, the contact angle using hydrogen ion beam with flowing 4ml/min oxygen stiffly decreased to 8$^{\circ}$ and surface energy to 65 ergs/cm. In case of PS, the contact angle and surface energy changes were similar results of PE, but the contact angle of PTEE samples decreased with ion dose up to 1$\times$1015 ions/$\textrm{cm}^2$, increased at higher dose, and finally increased to the extent that no wetting was appeared at 1$\times$1017 ions/$\textrm{cm}^2$. These results must be due to the hydrogen ion beam that cleans the surface removing the impurities on polymer surfaces, then hydrogen ion beam was activated with C-H bonding to make some functional groups in order to react with the oxygen gases. Finally, unstable polymer surface can be changed from hydrophobic to hydrophilic formation such as C-O and C=O that were confirmed by the XPS analysis, conclusionally, the ion assisted reaction is very effective tools to attach reactive ion species to form functional groups on C-C bond chains of PE, PS and PTFE.

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Design of Self-ion assisted beam source (SIAB) based on electron focusing with concentric symmetrical electric field and Cu thin film growth by SIAB (동심원형 대칭 전기장 집속 방식을 응용한 자가 이온 보조 소스 제작 및 Cu 박막 증착)

  • 송재훈;김기환;이충만;최성창;송종한;정형진;최원국
    • Journal of the Korean Vacuum Society
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    • v.8 no.2
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    • pp.121-126
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    • 1999
  • Cu thin film was deposited by a self-ion assisted beam source (SIAB) and the assessment of the Cu films was given. Some characteristics of the source and the experimental procedure are described at various conditions such as total power, ionization efficiency, and ion current vs. deposition rate. The dependence of crystalline structure, impurity concentration, and resistivity of the Cu films deposited by SIAB on acceleration voltage are discussed.

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A Study on Discharge Electrode Formation for PDP with Ion Beam Assisted DC Planar Magnetron Sputtering Device (Ion Beam Assisted DC Planar Magnetron Sputtering 장치에 의한 PDP용 방전전극 형성에 관한 연구)

  • Kim, J.H.;Son, J.B.;Shin, J.H.;Cho, J.S.;Park, C.H.
    • Proceedings of the KIEE Conference
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    • 1998.07e
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    • pp.1791-1793
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    • 1998
  • The thin film metal electrode for PDP needs low resistivity and strong adhesion. But the sputtered copper film is weak, in the adhesion between copper and glass. In this paper, we investigated the characteristics of resistivity and adhesion about Cu thin film using Ion Beam Assisted DC Planar Magnetron Sputtering(DCPM) Device.

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Ion Beam Assisted Crystallization Behavior of Sol-Gel Derived $PbTiO_3$ Thin Films

  • Oh, Young-Jei;Oh, Tae-Sung;Jung, Hyung-Jin
    • The Korean Journal of Ceramics
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    • v.2 no.1
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    • pp.48-53
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    • 1996
  • Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

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Effects of Ar+ ion Beam Irradiation on the Adhesion Forces between Carbon fibers and Thermosetting Resins (Ar+ 이온 빔 조사가 탄소섬유와 열경화성 수지 간 계면결합력에 미치는 영향)

  • 박수진;서민강;김학용;이경엽
    • Polymer(Korea)
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    • v.26 no.6
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    • pp.718-727
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    • 2002
  • In this work, an Ar+ beam was irradiated on carbon fiber surfaces to improve the interfacial shear strength (IFSS) of the resulting composites using an ion assisted reaction (IAR) method h single fiber pull-out test was executed to investigate the basic characteristics of the single Carbon fiber/matrix interface. Based on Greszczuk's geometrical model, the debonding force for pull-out of the fiber from the resins was discussed with the applied ion beam energy as a result, it was known that an ion beam treatment produced the functional groups on fiber surface and etching lines along the fiber axis direction, resulting in increasing the adhesion forces between fibers and matrix, which caused the improvement of the IFSS in a composite system. And, it was also found that the maximum IFSS was shown at 0.8 keV ion beam energy in this system.

A Study on the MgO Protective Layer Deposited by Oxygen-Neutral-Beam-Assisted Deposition in AC PDP (산소 중성빔으로 보조증착된 MgO 보호막을 갖는 AC PDP의 특성에 관한 연구)

  • Li, Zhao-Hui;Kwon, Sang-Jik
    • Journal of the Korean Vacuum Society
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    • v.17 no.2
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    • pp.96-101
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    • 2008
  • The magnesium oxide (MgO) protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by Ion-Beam-Assisted Deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, Oxygen-Neutral-Beam-Assisted Deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in structural and discharge characteristics. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when the MgO thin film was deposited with an oxygen neutral beam energy of 300eV. The surface morphology of MgO thin film was also analyzed using AFM (Atomic Force Microscopy) and SEM (Scanning Electron Microscopy).