• 한국안전학회지
• /
• 제14권3호
• /
• pp.134-139
• /
• 1999

In this study, PSII(plasma source ion implantation) was used to improve the biocompatibility of bone-anchored Ti implant. According to potentiodynamic anodic polarization test in deaerated Hank's solution, open circuit potential of ion implanted specimens were increased compare to that of unimplanted specimen ; besides, passive current density and critical anodic current density of ion implanted specimens were lower than unimplanted specimen.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
• /
• pp.233-235
• /
• 1988

This study investigate that the behavior of movable ion in PET effect on the characteristics of the insulting materials. This examine that movable ion signal to. participation of $Ca^2\;Sb^3$ resulting catalyst refuse and characteristics of activation energy that is need to reionization of movable ion type and neutralized case as measuring characteristics of polarity reversal current or thermally stimulated current.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제8권3호
• /
• pp.251-263
• /
• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• 전기학회논문지
• /
• 제59권9호
• /
• pp.1626-1631
• /
• 2010

The characteristics of electric current for the voltaic cell are important for electric power applications. In this paper, an electrical equivalent model consist of three resisters and a capacitance for the Cu/NaCl solution/Zn electrochemical cell is proposed. The capacitance which exists in the Zn electrode/electrolytic interface increased according to Zn electrode area, but cannot affect almost in electric current. Complex impedance plot was used to analysis the interface effect for Zn/electrolyte. This result shows that the interface is similar with the electric transmission line. The short current measurements were conducted to investigate the effects of hydrogen peroxide, the watery sulfuric acid and NaCl aqueous solution. As the hydrogen peroxide increased, the electric current increased because the hydrogen gas being converted with the water. Also electric current increased significantly with increase of the hydrogen ion with the watery sulfuric acid and increased with increase of $Na^+$ ion and $Cl^-$ion in the NaCl electrolyte.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1994년도 하계학술대회 논문집 C
• /
• pp.1609-1611
• /
• 1994

In ECR and helicon reactors for plasma processing, a high density plasma is generated in a source region which is connected to a diffusion region where the processing takes place. Large density and potential gradients can develop at the orifice of the source which drive ion currents into the diffusion region. The average ion velocity may become the order of the sound velocity. Measurements of the ion saturation current to a Langmuir probe are used as a standard method of determining the plasma density in laboratory discharges. However, the analysis becomes difficult in a steaming plasma. We have used the HAMLET plasma simulator to simulate the ion flow to a large langmuir probe in an ECR plasma. The collection surface was aligned with the Held upstream, normal to the field, and downstream. ion trajectories through the electric and magnetic fields were calculated including ion-neutral collisions. We examines the ratio of ion current density to plasma density as a function of magnetic field and pressure.

• 대한전기학회논문지
• /
• 제41권5호
• /
• pp.492-501
• /
• 1992

In this paper, an ion analyzer is used in conjunction with a Langmuir probe to study the chracteristics of ECR plasma such as the ion temperature, ion current density and electron temperature as the operating pressure, ${\mu}$-wave power and axial position change, Silicon etching has been performed with RF-biasing and its etching chracteristics have been discussed in terms of the ion energy distribution function. The maximum value of ion current density appears in the range of 10S0-3T mbar and the broadening of ion energy distribution function increases as pressure increases. Therefore, as pressure decreases, anisotropy increases but selectivity to photoresist decreases.

• 한국진공학회지
• /
• 제18권3호
• /
• pp.236-243
• /
• 2009

양성자기반공학기술개발사업단에서는 설치된 금속이온주입기를 이용하여 금속이온의 인출 시험 중에 있으며 120keV의 금속 이온주입이 가능하다. 현재 코발트 이온 주입의 타당성 확인을 위한 특성시험을 수행하고 있다. 이온원에 알루미나 도가니를 설치하여 분말 코발트 염화물을 고온($648^{\circ}C$) 가열에 의한 증기화로 인하여 플라즈마 방전이 되도록 하였다. 아크전압 120V, EHC 출력 250W에서 코발트 이온을 인출하기 위한 플라즈마를 발생하고 유지할 수 있었다. 코발트 이온 빔 전류는 플라즈마 내 아크전류에 의존하였으며 0.18A일 때 최대 빔전류 $100{\mu}A$를 얻을 수 있었다. 질량분리전자석에 의해서 $Co^+$와 $CoCl^+$, $Cl^+$ 이온의 첨두 빔 전류 비율을 확인하였고 전체 이온 대비 $Co^+$ 이온의 비율이 70% 수준을 유지함을 알 수 있었다. $Co^+$ 이온을 알루미늄 시료에 빔전류 $10{\mu}A$, 90분 동안 이온주입 하여 RBS(Rutherford Backscattering Spectrometry)분석법으로 $1.74{\times}10^{17}#/cm^2$의 이온량을 확인하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.310-311
• /
• 2011

Dual-frequency (DF) capacitively coupled plasmas (CCP) are used to separately control the mean ion energy and flux at the electrodes [1]. This separate control in capacitively coupled radio frequency discharges is one of the most important issues for various applications of plasma processing. For instance, in the Plasma Enhanced Chemical Vapor Deposition processes such as used for solar cell manufacturing, this separate control is most relevant. It principally allows to increase the ion flux for high deposition rates, while the mean ion energy is kept constant at low values to prevent highly energetic ion bombardment of the substrate to avoid unwanted damage of the surface structure. DF CCP can be analyzed in a fashion similar to single-frequency (SF) driven with effective parameters [2]. It means that DF CCP can be converted into SF CCP with effective parameters such as effective frequency and effective current density. In this study, comparison of DF CCP and its converted effective SF CCP is carried out through particle-in-cell/Monte Carlo (PIC-MCC) simulations. The PIC-MCC simulation shows that DF CCP and its converted effective SF CCP have almost the same plasma characteristics. In DF CCP, the negative resistance arises from the competition of the effective current and the effective frequency [2]. As the high-frequency current increases, the square of the effective frequency increases more than the effective current does. As a result, the effective voltage decreases with the effective current and it leads to an increase of the ion flux and a decrease of the mean ion energy. Because of that, the negative resistance regime can be called the preferable regime for solar cell manufacturing. In this preferable regime, comparison of DF (13.56+100 or 200 MHz) CCP and SF (60 MHz) CCP with the same effective current density is carried out. At the lower effective current density (or at the lower plasma density), the mean ion energy of SF CCP is lower than that of DF CCP. At the higher effective current density (or at the higher plasma density), however, the mean ion energy is lower than that of SF CCP. In this case, using DF CCP is better than SF CCP for solar cell manufacturing processes.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.283-283
• /
• 2010

The liquid metal ion sources(LMIS) in FIB system have many advantages of high current density, high brightness and low ion energy spread. Most FIB systems use LMIS because the ion beam spot size of LMIS is smaller than other ion sources. LMIS is basically emitted by an extractor but the new electrode called the suppressor is able to control the emission current. We investigated characteristics LMIS with a suppressor, the function of the suppressor in LMIS, the change of the electric field by the suppressor and the advantages of using the suppressor. The characteristics of the threshold voltage and current-voltage (I-V) were observed under the varying extracting voltage with floated suppressor voltage, and under the varying suppressor voltages with fixed extractor voltage. We also simulated LMIS with the suppressor through CST(Computer Simulation Technology). The emission current increases as the suppressor voltage decreases because the suppressor voltage which restrains the electric field goes down, The threshold voltage increases as the suppressor voltage increases. We can explain characteristics and functions of LMIS with a suppressor using the electric field.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2001년도 하계학술대회 논문집 D
• /
• pp.2531-2533
• /
• 2001

This paper describes a low noise and high efficiency analog-digital switching mixed mode battery charger for production facilities of Li-Ion batteries. The requirements for battery chargers for production facilities are very strict. The accuracy of output voltage and output current should be below 0.1% with very low ripple current. Therefore analog type linear regulators are widely used for battery charger in spite of their inefficiency and bulkiness. We combined linear regulator as a voltage source with digital switching converter as a dependent current source. Low current ripple and high accuracy are obtained by linear regulator while high efficiency is achieved by digital switching converter. Experimental results show that proposed method has 0.1% ripple and 90% efficiency at an output current of 1A for a battery voltage of 4V.