• ETRI Journal
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• v.27 no.4
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• pp.427-432
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• 2005

In this study, we present a new topology for realizing a grounded inductor employing only a single current conveyor, called a negative-type modified inverting second-generation current conveyor (MICCII-), and a minimum number of passive components, two resistors, and one capacitor. The non-ideality effects of the MICCII- on a simulated inductor are investigated. To demonstrate the performance of the presented inductance simulator, we use it to construct a third order Butterworth high-pass filter and a parallel resonant circuit. Simulation results are given to confirm the theoretical analysis.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.4
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• pp.338-347
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• 2021

In this paper, the beta-ray sensor circuit used in the true random number generator was designed using DB HiTek's 0.18㎛ CMOS process. The CSA circuit proposed a circuit having a function of selecting a PMOS feedback resistor and an NMOS feedback resistor, and a function of selecting a feedback capacitor of 50fF and 100fF. And for the pulse shaper circuit, a CR-RC2 pulse shaper circuit using a non-inverting amplifier was used. Since the OPAMP circuit used in this paper uses single power instead of dual power, we proposed a circuit in which the resistor of the CR circuit and one node of the capacitor of the RC circuit are connected to VCOM instead of GND. And since the output signal of the pulse shaper does not increase monotonically, even if the output signal of the comparator circuit generates multiple consecutive pulses, the monostable multivibrator circuit is used to prevent signal distortion. In addition, the CSA input terminal, VIN, and the beta-ray sensor output terminal are placed on the top and bottom of the silicon chip to reduce capacitive coupling noise between PCB traces.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.800-807
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• 2006

To enhance the conversion speed more fast, we separate the determination process of MSB and LSB with the two independent ADC circuits of the Incremental Sigma Delta ADC. After the 1st Incremental Sigma Delta ADC conversion finished, the 2nd Incremental Sigma Delta ADC conversion start while the 1st Incremental Sigma Delta ADC work on the next input. By determining the MSB and the LSB independently, the ADC conversion speed is improved by two times better than the conventional Extended Counting Incremental Sigma Delta ADC. In processing the 2nd Incremental Sigma Delta ADC, the inverting sample/hold circuit inverts the input the 2nd Incremental Sigma Delta ADC, which is the output of switched capacitor integrator within the 1st Incremental Sigma Delta ADC block. The increased active area is relatively small by the added analog circuit, because the digital circuit area is more large than analog. In this paper, a 14 bit Extended Counting Incremental Sigma-Delta ADC is implemented in $0.25{\mu}m$ CMOS process with a single 2.5 V supply voltage. The conversion speed is about 150 Ksamples/sec at a clock rate of 25 MHz. The 1 MSB is 0.02 V. The active area is $0.50\;x\;0.35mm^{2}$. The averaged power consumption is 1.7 mW.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.319-324
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• 2012

This paper presents the study of 3-Phase bi-directional DC to AC inverter with unity power factor. 3-Phase bi-directional DC to AC inverter is important for the bi-modal PV PCS with an energy storage system. Both Inverting and converting are needed to connect between the grid side and boost converting side to charge and discharge the energy storage system. The paper proposes the appropriate circuit topology and proper control system for the bi-directional inverter. It also proposes the method of selecting the optimum control method considering system stability. PSIM simulation is used to validate the proposed algorithm.

• Journal of Power Electronics
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• v.15 no.2
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• pp.356-365
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• 2015

This paper presents a new single phase front-end ac-dc bridgeless power factor correction (PFC) rectifier topology. The proposed converter achieves a high efficiency over a wide range of input and output voltages, a high power factor, low line current harmonics and both step up and step down voltage conversions. This topology is based on a non-inverting buck-boost (Zeta) converter. In this approach, the input diode bridge is removed and a maximum of one diode conducts in a complete switching period. This reduces the conduction losses and the thermal stresses on the switches when compare to existing PFC topologies. Inherent power factor correction is achieved by operating the converter in the discontinuous conduction mode (DCM) which leads to a simplified control circuit. The characteristics of the proposed design, principles of operation, steady state operation analysis, and control structure are described in this paper. An experimental prototype has been built to demonstrate the feasibility of the new converter. Simulation and experimental results are provided to verify the improved power quality at the AC mains and the lower conduction losses of the converter.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.2
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• pp.220-228
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• 2012

In this paper, we explained the design technique about Ka-band active limiter for protecting the receiver of a millimeter wave seeker. To implement low flat leakage power, we proposed the control circuit of active limiter to control limiter voltage with PRF(Pulse Repetition Frequency) signal and input power. This active limiter consisted of the conventional 2 stage passive limiter, a feedback circuit with a directional coupler, detector, non-inverting amplifier and over-current protection resistance. As the test result of the fabricated Ka-band limiter, it had 1 GHz bandwidth, 3.5 dB insertion loss at the small input power and -7.5 dBm flat leakage at the 4 W RF input power, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.52-58
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• 2006

Single-electron transistor (SET)-based logic cells and SET/FET hybrid integrated circuits have been fabricated on SOI chips. The input-output voltage transfer characteristic of the SET-based complementary logic cell shows an inverting behavior where the output voltage gain is estimated to be about 1.2 at 4.2K. The SET/FET output driver, consisting of one SET and three FETs, yields a high voltage gain of 13 and power amplification with a wide-range output window for driving next circuit. Finally, the SET/FET literal gate for a multi-valued logic cell, comprising of an SET, an FET and a constant-current load, displays a periodic voltage output of high/low level multiple switching with a swing as high as 200mV. The multiple switching functionality of all the fabricated logic circuits could be enhanced by utilizing a side gate incorporated to each SET component to enable the phase control of Coulomb oscillations, which is one of the unique characteristics of the SET-based logic circuits.

• Journal of IKEEE
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• v.24 no.3
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• pp.853-858
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• 2020

This paper proposes a 2-ch DC-DC converter for OLED display with immunity against RF noise inserted from communication device. For RF signal immunity, an input voltage variation reduction circuit that attenuates as much as the input voltage variation is embedded. The boost converter for positive voltage V_POS operates in SPWM-PWM dual mode and has a dead time controller to increase power efficiency. The inverting charge pump for negative voltage V_NEG is a 2-phase scheme and operates in PFM using VCO to reduce output ripple voltage. Simulation results using 0.18 ㎛ BCDMOS process show that the overshoot and undershoot of the output voltage decrease from 10 mV to 2 mV and 5 mV, respectively. The 2-ch DC-DC converter has power efficiency of 39%~93%, and the power efficiency of the boost converter is up to 3% higher than the conventional method without dead time controller.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.620-621
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• 2008

Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide-based thin-film transistors (TFTs) on glass and plastic substrates although in general high voltage operating devices have been mainly studied considering transparent display drivers. However, low voltage operating oxide TFTs with transparent electrodes are very necessary if we are aiming at logic circuit applications, for which transparent complementary or one-type channel inverters are required. The most effective and low power consuming inverter should be a form of complementary p-channel and n-channel transistors but real application of those complementary TFT inverters also requires electrical- and even photo-stabilities. Since p-type oxide TFTs have not been developed yet, we previously adopted organic pentacene TFTs for the p-channel while ZnO TFTs were chosen for n-channel on sputter-deposited $AlO_x$ film. As a result, decent inverting behavior was achieved but some electrical gate instability was unavoidable at the ZnO/$AlO_x$ channel interface. Here, considering such gate instability issues we have designed a unique transparent complementary TFT (CTFTs) inverter structure with top n-ZnO channel and bottom p-pentacene channel based on 12 nm-thin nano-oxide/self assembled monolayer laminated dielectric, which has a large dielectric strength comparable to that of thin film amorphous $Al_2O_3$. Our transparent CTFT inverter well operate under 3 V, demonstrating a maximum voltage gain of ~20, good electrical and even photoelectric stabilities. The device transmittance was over 60 % and this type of transparent inverter has never been reported, to the best of our limited knowledge.

• Journal of IKEEE
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• v.23 no.3
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• pp.1061-1067
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• 2019

In this paper, a highly integrated 3-channel DC-DC converter is designed using power transistor width scaling (PTWS). For positive voltage, $V_{POS}$, a boost converter is designed using the set-time variable pulse width modultaion (SPWM) dual-mode and PTWS to improve efficiency at light load. For negative voltage, $V_{NEG}$, a 0.5 x regulated inverting charge pump is designed with pulse skipping modulation (PSM) controller to reduce power consumption, and for an additional positive voltage, $V_{AVDD}$, a LDO circuit is designed. The proposed DC-DC converter has been designed using a $0.18{\mu}m$ BCDMOS process. Simulation results show that the proposed converter has power efficiency of 56%~90% for load current range of 1 mA~70 mA and output ripple voltage less than 5 mV at positive voltage.