• Bulletin of the Korean Chemical Society
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• 제7권5호
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• pp.391-395
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• 1986

MNDO calculations were carried out to determine reactant complexes and transition states of the $S_N2$ reactions of $CH_3X\;+\;Y^-\;{\to}\;CH_3Y\;+\;X^-$ where X = F, Cl, CN and Y = CN, OH, F, Cl. The leaving group ability was found to vary inversely with the activation barrier, which in turn was mainly ascribable to the deformation energies accompanied with bond stretching of C-X bond and inversion of $CH_3$ group. The nucleophilicity was shown to be in the order $Cl^->F^->OH^->CN^-$ but the effect on the activation barrier was relatively small compared with that of the leaving group. The bond breaking and bond formation indices and energy decomposition analysis showed that the TS for the reaction of $CH_3$Cl occurs in the early stage of the reaction coordinate relative to that of $CH_3$F. It has been shown that the potential energy surface (PES) diagrams approach can only accommodate thermodynamic effects but fails to correlate intrinsic kinetic effects on the TS structure.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권3호
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• pp.203-212
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• 2010

In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.

• 한국정보통신학회논문지
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• 제21권8호
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• pp.1465-1470
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• 2017

기존의 MOSFET에서는 반전층보다 항상 실리콘 두께가 크기 때문에 드레인유도 장벽감소가 실리콘 두께에 관계없이 산화막 두께 및 채널길이의 함수로 표현되었다. 그러나 10 nm 이하 저도핑 이중게이트 구조에서는 실리콘 두께 전체가 공핍층이 형성되기 때문에 기존의 SPICE 모델을 사용할 수 없게 되었다. 그러므로 이중게이트 MOSFET에 대한 새로운 SPICE 용 드레인유도 장벽감소 모델을 제시하고자 한다. 이를 분석하기 위하여 전위분포와 WKB 근사를 이용하여 열방사 및 터널링 전류를 구하였다. 결과적으로 드레인유도 장벽감소는 상하단 산화막 두께의 합 그리고 실리콘 두께의 2승에 비례하며 채널길이의 3승에 반비례한다는 것을 알 수 있었다. 특히 SPICE 파라미터인 정적 궤환계수가 1과 2사이에서 사용할 수 있어 합당한 파라미터로써 사용할 수 있었다.

• 자연과학논문집
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• 제16권1호
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• pp.129-141
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• 2005

The equilibrium geometry, adiabatic electron affinity, harmonic vibrational frequencies, and infrared intensities of 1,4,6,9-Tetra chlorinated dibenzo-$\rho$-dioxin anion have been studied using B3LYP method. The local minimum conformation is found to be twisted form with $D_2$ symmetry. The predicted adiabatic electron affinity is 0.54 eV. The predicted inversion barrier between twisted and planar conformers was 0.9 kcal/mol, thus we expect that experimentally observed structure seems to be planar. the characteristic IR band of 1,4,6,9-TCDD anion appears at 1510 $cm^4$, which is a benzene ring skeleton vibration mode related with CaCb and C2C3 bond. this characteristic band could be sued for identication of 1,4,6,9-TCDD anion.

• ETRI Journal
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• 제32권1호
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• pp.68-72
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• 2010

The coupling between the transverse and longitudinal components of the channel electron motion in NMOS devices leads to a reduction in the barrier height. Therefore, this study theoretically investigates the effects of the in-plane velocity of channel electrons on the capacitance-voltage characteristics of nano NMOS devices under inversion bias. Numerical calculation via a self-consistent solution to the coupled Schrodinger equation and Poisson equation is used in the investigation. The results demonstrate that such a coupling largely affects capacitance-voltage characteristic when the in-plane velocity of channel electrons is high. The ballistic transport ensures a high in-plane momentum. It suggests that such a coupling should be considered in the quantum capacitance-voltage modeling in ballistic transport devices.

• Journal of Electrical Engineering and information Science
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• 제2권6호
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• pp.208-211
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• 1997

We have fabricated a single-electron-tunneling(SET) transistor with a dual gate geometry based on the SOI structure prepared by SIMOX wafers. The split-gate is the lower-gate is the lower-level gate and located ∼ 100${\AA}$ right above the inversion layer 2DEG active channel, which yields strong carrier confinement with fully controllable tunneling potential barrier. The transistor is operating at low temperatures and exhibits the single electron tunneling behavior through nano-size quantum dot. The Coulomb-Blockade oscillation is demonstrated at 15mK and its periodicity of 16.4mV in the upper-gate voltage corresponds to the formation of quantum dots with a capacity of 9.7aF. For non-linear transport regime, Coulomb-staircases are clearly observed up to four current steps in the range of 100mV drain-source bias. The I-V characteristics near the zero-bias displays typical Coulomb-gap due to one-electron charging effect.

• 한국응용과학기술학회지
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• 제37권6호
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• pp.1738-1751
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• 2020

피부는 표피, 진피, 피하지방의 세 부분으로 나누어져 있으며, 표피의 가장 윗부분에 존재하는 각질층은 약물의 피부 전달을 방해하는 장벽 역할을 한다. 나노에멀젼은 특유의 작은 입자크기 때문에 세포간 지질을 통과하여 약물의 피부전달에 효과적이라고 알려져 있다. 본 연구에서는 α-bisabolol의 효과적인 피부흡수를 위해 반응표면분석법(response surface methodology, RSM)을 이용하여 상반전온도(phase inversion temperature, PIT) 유화법으로 제조한 α-bisabolol을 함유한 나노에멀젼을 최적화하였다. 예비실험으로 25-2 일부요인배치법과 23 요인배치법이 수행되었다. 요인배치법의 결과를 바탕으로 계면활성제(6.3~12.6%), 보조계면활성제(5.2~7.8%) 및 α-bisabolol (0.5~5.0%) 함량을 인자로 하고 반응 변수를 나노에멀젼의 입자크기로 하는 Box-Behnken design을 수행하였다. RSM 결과에 따라 PIT 나노에멀젼 최적화를 수행하였고, 그 결과 최적의 나노에멀젼 처방 조건은 계면활성제 함량 10.4%, 보조계면활성제 함량 6.3%, α-bisabolol 함량 5.0%로 예측되었다. 피부흡수시험 결과 PIT 나노에멀젼의 최종 피부흡수율은 35.11±1.01%, 대조군인 일반에멀젼의 최종 피부흡수율은 28.25±1.69%로 PIT 나노에멀젼의 피부흡수율이 더 우수함을 확인하였다.

• Journal of Electrical Engineering and Technology
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• 제1권3호
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• pp.396-405
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• 2006

The visual analysis of buried channel (Be) devices such as buried channel MOSFETs and CCDs (Charge Coupled Devices) is investigated to give better understanding and insight for their electrical behaviours using a 3-dimensional (3-D) numerical simulation. This paper clearly demonstrates the capability of the numerical simulation of 'EVEREST' for characterising the analysis of a depletion mode MOSFET and BC CCD, which is a simulation software package of the semiconductor device. The inverse threshold and punch-through voltages obtained from the simulations showed an excellent agreement with those from the measurement involving errors of within approximately 1.8% and 6%, respectively, leading to the channel implanted doping profile of only approximately $4{\sim}5%$ error. For simulation of a buried channel CCD an advanced adaptive discretising technique was used to provide more accurate analysis for the potential barrier height between two channels and depletion depth of a deep depletion CCD, thereby reducing the CPU running time and computer storage requirements. The simulated result for the depletion depth also showed good agreement with the measurement. Thus, the results obtained from this simulation can be employed as the input data of a circuit simulator.

• 생명과학회지
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• 제33권11호
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• pp.905-914
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• 2023

본 연구에서는 lactic acid (LA) 및 gluconolactone (GL)의 피부 장벽 개선 효능을 평가하기 위하여 피부세포에서 필라그린, 로리크린, hyaluronic acid (HA), hyaluronan synthase-2 (HAS2), aquaporine-3 (AQP3)의 발현량 및 임상시험을 통한 수분 함유량과 경표피수분손실량(transepidermal water loss, TEWL)을 평가하였다. 장벽 기능(필라그린, 로리크린)과 보습 기능(HA, HAS2, AQP3)에 관련된 인자들의 발현량을 qRT-PCR과 Western blot으로 측정한 결과, H2O2 처리에 의해 감소된 인자들의 발현량이 LA, GL 및 혼합물 처리로 mRNA전사량과 단백질 발현량을 유의적으로 증가하는 것으로 나타났다(p<0.05). LA와 GL 혼합물을 함유하는 나노에멀젼을 에멀젼 반전법으로 제조한 결과 평균 입자 크기는 299.9±0.287 nm로 확인되었다. 나노에멀젼의 TEWL을 Vapometer로 측정한 결과, 제품 사용 2주 후 및 제품 사용 4주 후에 제품 사용 전에 비하여 각각 15.53%, 26.73% 정도 TEWL이 감소하는 것으로 나타났다(p<0.001). 나노에멀젼의 피부 수분함유량을 Corneometer로 측정한 결과, 제품 사용 2주 후 및 제품 사용 4주 후에 제품 사용 전에 비하여 각각 15.40%, 26.59% 정도 수분 함유량이 유의적으로 증가하는 것으로 나타났다(p<0.001). 따라서 LA 및 GL의 피부 장벽 기능 및 보습 효과는 피부 보습 관련 단백질인 HA, HAS2 및 AQP3 발현 증가와 피부 장벽 기능의 주요인자인 필라그린과 로리크린의 발현 증가를 통한 수분 함유량 증가 및 TEWL 감소에 의해 나타나는 것으로 기능성 화장품 소재로서의 개발 가능성을 제시한다.

• Bulletin of the Korean Chemical Society
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• 제30권2호
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• pp.429-434
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• 2009

The OH($X^2{\Pi},\;{\nu}$"=0, 1) internal state distributions from the reaction of electronically ground state oxygen atoms with HSi$Cl_3$ were measured using laser-induced fluorescence. The ground-state O$(^3P_J)$ atoms with kinetic energies above the reaction barrier were produced by photolysis of N$O_2$ at 355 nm. The OH product revealed strong vibrational population inversion, P(${\nu}$"=1)/P(${\nu}$"=0) = 4.0 ${\pm}$ 0.6, and rotational distributions in both vibrational states exhibit substantial rotational excitations to the limit of total available energy. However, no preferential populations in either of the two $\Lambda$ doublet states were observed from the micropopulations, which supports a mechanism involving a direct abstraction of hydrogen by the atomic oxygen. It was also found that the collision energy between O and HSi$Cl_3$ is effectively coupled into the excitation of the internal degrees of freedom of the OH product ($$ = 0.62, and $<\;f_{rot}>$ = 0.20). The dynamics appear consistent with expectations for the kinematically constrained reaction which supports the reaction type, heavy + light-heavy $\rightarrow$ heavy-light + heavy (H + LH′ $\rightarrow$ HL + H′). The dynamics of oxygen atom collision with HSi$Cl_3$ are discussed in comparison to those with Si$H_4$.