• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.74-75
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• 2005

Organic Light Emitting Diodes are attractive as alternative display components because of their relative merits of being self-emitting, having large intrinsic viewing angle and fast switching speed. But because of their relatively short history of development, much remains to be studied in terms of their basic device physics and design, manufacturing techniques, stability and so on. We invested electrical properties of N, N-diphenyl-N, N bis (3-methyphenyl)-1, 1'-biphenyl-4, 4'-diamine and tris-8-hydroxyquinoline aluminum when their thickness were changed variedly from 3:7 to 7:3 of their thickness ratios. And we also studied their optimal thickness respectively.

• Current Photovoltaic Research
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• 제1권2호
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• pp.103-108
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• 2013

Epitaxial growth of a high-quality thin Si film is essential for the application to low-cost thin-film Si solar cells. A polycrystalline Si film was grown on a $SiO_2$ substrate at $450^{\circ}C$ by a Al-assisted crystal growth process. For the purpose, a thin Al layer was deposited on the $SiO_2$ substrate for Al-assisted crystal growth. However, the epitaxial growth of Si film resulted in a rough surface with humps. Then, we introduced a thin amorphous Si seed layer on the Al film to minimize the initial roughness of Si film. With the help of the Si seed layer, the surface of the epitaxial Si film was smooth and the crystallinity of the Si film was much improved. The grain size of the $1.5-{\mu}m$-thick Si film was as large as 1 mm. The Al content in the Si film was 3.7% and the hole concentration was estimated to be $3{\times}10^{17}/cm^3$, which was one order of magnitude higher than desirable value for Si base layer. The results suggest that Al-doped Si layer could be use as a seed layer for additional epitaxial growth of intrinsic or boron-doped Si layer because the Al-doped Si layer has large grains.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.109-112
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• 2007

In this paper we describe a robust method of improving precision in monitoring high energy ion implantation processes. Ion implant energy accuracy was measured in the device manufacturing process using an unpatterned implanted layer on an intrinsic p-type silicon wafer. To increase Rs sensitivity to energy at the well implant process, a PN junction structure was formed by P-well and deep N-well implants into the p-type Si wafer. It was observed that the depletion layer formed by the PN junction was very sensitive to energy variation of the well implant. Conclusively, it can be recommended to monitor well implant processes using the Rs measurement method described herein, i.e., a PN junction diode structure since it shows excellent Rs sensitivity to variation caused by energy difference at the well implant step.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.434-438
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• 2006

High-quality a-Si TFTs were fabricated on 7 inch plastic PES substrates at $130^{\circ}C$ and $100^{\circ}C$. It had been shown that the key factor for successful TFT fabrication on the relatively large plastic substrates is thorough control of total active layer's stress by means of deposition temperature reduction and single layer's intrinsic stress optimization.

• Journal of Information Display
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• 제10권1호
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• pp.19-23
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• 2009

In this paper, we review the proposed liquid crystal display (LCD) with a tunable viewing angle consisting of a conventional liquid crystal display (LCD) panel and a thermally variable retardation layer (TVRL) characterized by uniformly aligned LC film with transparent indium-tin-oxide electrodes for Joule heating. In the TVRL, nematic phase is transitioned into isotropic by Joule heating. The numerical calculation showed that the intrinsic wide viewing angle was achieved at the isotropic phase of the TVRL by Joule heating, whereas the narrow viewing angle was obtained at the nematic phase of the TVRL. The simulated and experimental results of the proposed LCD show continuous and symmetrical viewing angle characteristics by tuning the retardation of TVRL using Joule heating. The structure of the viewing angle control proposed here is adoptable to all LCD modes with wide viewing angle characteristics.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.326-329
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• 1999

In this paper, we demonstrate a polarization independent optical phase modulator using electro-optic polymer, P2ANS. To overcome the intrinsic polarization dependency of electro-optic effect, we control the optic axis using a new electrode structure. P2ANS(42:75) and P2ANS(25:75) are used for the core layer and the cladding layer, respectively. The buried-type single mode waveguide is fabricated by oxygen ion reactive etching and electic poling is performed by applying 1, 200V at 135$^{\circ}C$. The measured V$_{\pi}$ of the device for both TE and TM modes are 70V.

• 전자공학회논문지A
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• 제29A권3호
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• pp.66-71
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• 1992

We fabricated highly stable a-Si:H solar cell using low band gap intrinsic layer fabricated by RP-CVD. We obtained a-Si:H with optical band gap of less than 1.65 eV with deposition rate of 0.18 $\AA$/sec, and used this material as bottom i-layer of a-Si:H double stacked solar cells. We have succeeded in the fabrication of very stable a-Si:H double stacked solar cell of which the conversion efficiency is about 9% and the degradation is less than 4% after light illumination for 100h under 350mW/cm$^{2}$.

• 세라미스트
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• 제23권2호
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• pp.145-165
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• 2020

Halide perovskites are promising photovoltaic materials due to their excellent optoelectronic properties like high absorption coefficient, low exciton binding energy and long diffusion length, and single-junction solar cells consisting of them have shown a high certified efficiency of 25.2%. Despite of high efficiency, perovskite photovoltaics show poor stability under actual operational condition, which is the mostly critical obstacle for commercialization. Given that the stability of the perovskite devices is significantly affected by charge-transporting layers, the use of inorganic charge-transporting layers with better intrinsic stability than the organic counterparts must be beneficial to the enhanced device reliability. In this review article, we summarized a number of studies on the inorganic charge-transporting layers of the perovskite solar cells, especially focusing on their effects on the enhanced device reliability.

• EDISON SW 활용 경진대회 논문집
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• 제5회(2016년)
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• pp.305-307
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• 2016

We calculated Li ion migration energy barrier, applying three different models on Li ion insertion into $TiO_2$ nanolayers to elucidate the previously reported high rate of charge-discharge. With the existence of additional Li ion on the surface of $TiO_2$ structure, spontaneous insertion of Li ion into the second layer from the first layer was observed. Using this result, we showed the intrinsic property of $TiO_2$ structure and it has a contribution to the reported performance. In the end, we give a suggestion on the fabrication of $TiO_2-Graphene$ hybrid structure for Li ion battery electrode.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.248-250
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• 2004

We have investigated the surface state of 154kV polymeric insulators exposed to in-service conditions for about five years. In order to evaluate surface aging of silicone rubber exposed to real field environments, we used various analytic methods such as contact angle, ATR-FTIR, SEM-EDS. Although contaminants were accumulated on weathershed surface, polymeric insulator has retained its intrinsic surface hydrophocity. In addition, ATR-FTIR confirmed the diffusion layer of a low molecular weight silicone fluid on surface layer and no surface cracking and chalking were Indicated by SEM. Polymeric insulators have still retained their improved pollution performance over porcelain insulators. That will lead to very low frequency of flashovers throughout their useful life, often under contaminated conditions.