• The Journal of the Acoustical Society of Korea
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• v.42 no.2
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• pp.102-111
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• 2023

Automatic Music Transcription (AMT) is a task that detects and recognizes musical note events from a given audio recording. In this paper, we focus on reducing the latency of real-time AMT systems on piano music. Although neural AMT models have been adapted for real-time piano transcription, they suffer from high latency, which hinders their usefulness in interactive scenarios. To tackle this issue, we explore several techniques for reducing the intrinsic latency of a neural network for piano transcription, including reducing window and hop sizes of Fast Fourier Transformation (FFT), modifying convolutional layer's kernel size, and shifting the label in the time-axis to train the model to predict onset earlier. Our experiments demonstrate that combining these approaches can lower latency while maintaining high transcription accuracy. Specifically, our modified model achieved note F1 scores of 92.67 % and 90.51 % with latencies of 96 ms and 64 ms, respectively, compared to the baseline model's note F1 score of 93.43 % with a latency of 160 ms. This methodology has potential for training AMT models for various interactive scenarios, including providing real-time feedback for piano education.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• Korean Journal of Environmental Biology
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• v.26 no.1
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• pp.30-35
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• 2008

In order to investigate whether or not CCD-986sk cell line can be affected by Korean Ecklonia stolonifera Okamura, we examined the MTT assay when we treated Korean Ecklonia stolonifera Okamura extract in CCD-986sk human fibroblast cell line. The sample were tested for cell proliferation activity by means of a modification of the MTT assay. Ecklonia stolonifera Okamura extract showed significantly strong cell proliferation activity at the range of from 6.25 mg $mL^{-1}$ to 1.56 mg $mL^{-1}$ compared with control group. And in order to search for inhibition agents of skin melanin formation, we tested for inhibition effect of melanin pigmentation of Korean Ecklonia stolonifera Okamura using Clone M-3 mouse melanocyte cell lines. when we treated the extracts of Ecklonia stolonifera Okamura to the mouse melanocyte cell lines, the sample showed a significantly little formation of melanin pigments compared with control group at the only range of 200 mg $mL^{-1}$. These results suggest that extract of Korean Ecklonia stolonifera Okamura may represents an excellent candidate for inhibition of melanin pigmentation and for protection of human skin aging at in vitro level.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.205-208
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• 2005

최근 열선 화학 기상 증착법(HWCVD)은 낮은 온도에서 TFT용 Poly Si 중착을 할 수 있다는 점과 실리콘 박막을 빠른 속도로 증착할 수 있다는 점에서 각광을 받고 있다. 본 연구에서는 HWCVD를 이용하여 태양전지를 제조하고 그 특성을 평가하였다. 조건에 따른 실리콘 박막의 특성 변화를 알기 위해 corning glass 및 실리콘 wafer에 다양한 조건에서 단위 박막(intrinsic layer)을 증착하였고 이 결과를 바탕으로 p/i/n 구조의 태양전지를 제조하였다. Ta 열선 온도는 1700-2000도였고 가스 원료인 $SiH_4$와 수소의 비율을 조절하면서 그 영향을 관찰하였다. 태양전지의 경우 p충과 n충은 PECVD로 증착하였으며 단위박막 및 태양전지 i충 증착시 기판과 열선간의 거리는 7cm, 기판 온도는 $200^{\circ}C$와 $250^{\circ}C$로 고정하였고 작업압력은 30mTorr였다. 단위 박막 특성 평가를 위해 암/광 전도도, SEM, Raman Scattering, FT-IR등을 사용하였으며 태양전지 특성 평가를 위해 I-V 및 Spectral response를 측정하였다. 열선 온도가 증가함에 따라 증착속도 및 결정화 분율은 증가하였다. 특히 비정질에서 결정질로 전이되는 구간은 매우 좁았으며 여러 분석 방법에서 일치되는 결과를 보였다. $SiH_4$ 유량이 늘어날수록 비정질이 결정질로 바뀌는 열선 온도가 증가하였으며 기판 온도가 낮을 경우 또한 결정으로 바뀌는 열선 온도가 증가하였다. 태양전지의 경우 열선 온도가 증가함에 따라 $V_{oc}$ 및 W가 낮아졌으며 $J_{sc}$, 는 증가하는 경향을 보였으며 결정질 비율이 증가하는 것을 관찰할 수 있었다. 이러한 경향은 quantum efficiency 결과에서도 확인할 수 있었다.용을 반복하면서 석재 내부와 외부의 암석 및 결정에 균열과 미세열극 등이 생성되어 석재 자체의 구조적 안정성에 영향을 주고 있다. 따라서 감은사지 석탑은 지리적 환경 차이로 인해 일반적인 환경의 석조물들과는 다른 형태의 풍화양상을 보이고 있어서 풍화양상 및 풍화형태에 대한 정확한 연구와 이해를 바탕으로 보존대책이 마련되어야 한다.되었다. 이런 모든 시편들을 각 탈염방법에 따라 탈염처리한 후 XRD와 SEM-EDS으로 분석한 결과 인철광과 침철광은 어떠한 변화도 보이지 않았고, 다만 적금광으로 동정된 시편만이 잔존하지 않았다. 철기 제작별 $Cl^-$ 이온 추출량과 탈염효과에 대한 비교 실험은 이온 크로마토그래피 분석 결과와 마찬가지로 단조 철제유물이 주조 철제보다 $Cl^-$ 이온을 많이 가지고 있었으며, 탈염 처리 후에는 $Cl^-$ 이온은 전혀 발견되지 않았다. 이상의 결과 $K_2CO_3$와 Sodium 용액은 탈염처리에서 가장 적합한 탈염처리 용액으로 알수가 있었으며 특히 어떠한 탈염 용액으로 유물을 처리한다 해도 철제유물에 생성된 부식물은 제거되지 않는다는 것을 알게 되었다. 따라서 보존처리자는 유물 표면의 부식 상태만을 보고 처리하기 보다는 철기제작물로 고려하여 처리하는 것이 필요하다. 또한 금속에 부식을 야기시키는 $Cl^-$ 이온과 부식물을 완전하게 제거하여 탈염처리를 하는 것이 유물 부식을 최대한 지연시킬 수 있는 것이라 생각된다.TEX>$88\%$)였다.(P=0.063). 결론: 본 연구에서는 MTHFR C/T & T/T 유전자 다형성이 위암의 발생과 그 위치에 대해 관련이 있는 것으로 여겨지고, 흡연력, 음주력과는 관련이 없는 것으로 여겨진다.험이 커지는 경향을 보였으나, 나이 및 병기, 종양의 크기, MD-BED $Gy_{10}$ 등의 예후 인자를 보정한 다변

• Journal of radiological science and technology
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• v.31 no.2
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• pp.183-188
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• 2008

Aim of this study is to investigate the feasibility of 2D ion chamber array as a substitute of the water phantom system in a periodic Linac QA. For the feasibility study, a commercial ion chamber matrix was used as a substitute of the water phantom in the measurement for a routine QA beam properties. The device used in this study was the I'm RT MatriXX (Wellhofer Dosimetrie, Germany). The MatriXX consists of a 1,020 vented ion chamber array, arranged in $24{\times}24\;cm^2$ matrix. Each ion chamber has a volume of $0.08\;cm^3$, spacing of 0.762 cm. We investigated dosimetric parameters such as dose symmetry, energy ($TPR_{20,10}$), and absolute dose for comparing with the water phantom data with a Farmer-type ionization chamber (FC65G, Wellhofer Dosimetrie, Germany). For the MatriXX measurements, we used the white polystyrene phantom (${\rho}:\;1.18\;g/cm^3$) and also considered the intrinsic layer (${\rho}:\;1.06\;g/cm^3$, t: 0.36 cm) of MatriXX to be equivalent to water depth. In the preliminary study of geometrical QA using MatriXX, the rotation axis of collimator and half beam junction test were included and compared with film measurements. Regarding the dosimetrical QA, the MatriXX has shown good agreements within ${\pm}1%$ compared to the water phantom measurements. In the geometrical test, the data from MatriXX were comparable with those from the films. In conclusion, the MatriXX is a good substitute for water phantom system and film measurements. In addition, the results indicate that the MatriXX as a cost-effective novel QA tool to reduce time and personnel power.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.107-108
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• 2008

The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.45 no.2
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• pp.175-184
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• 2019

The epidermal growth factor (EGF) has a intrinsic function of inducing growth and proliferation of cells through interacting with cell membrane receptors in human epidermis and dermis layer. These functions of EGF are used as a main ingredient for wound healing medicines and anti-aging cosmetics. As a cosmetic ingredient, the EGF has a problem in exhibiting its natural efficacy due to the lack of the ability to penetrate through the stratum corneum, which is known as the skin barrier. In this study, a recombinant human epidermal growth factor ($MTD_{151}-EGF$) fused with the macromolecule transduction domain $(MTD)_{151}$ with the skin penetration ability was developed to improve the skin penetration efficiency of the EGF. Expression of $MTD_{151}-EGF$ was performed in E. coli transformed with a vector encoding the $MTD_{151}-EGF$ gene and then purified. The purified $MTD_{151}-EGF$ was evaluated using cell proliferation assay, cytotoxicity test and skin penetration test by franz diffusion cell assay and artificial skin. Cell proliferation activity of $MTD_{151}-EGF$ purified to high purity of 99% or above was equivalent to the EGF or better, and cytotoxicity was not observed. In addition, the $MTD_{151}-EGF$ showed an excellent penetration efficiency compared to the EGF in the skin penetration test with EGF and $MTD_{151}-EGF$ labeled by FITC in an artificial skin penetration model. Based on the quantitative analysis of the penetrating substance using franz diffusion cell assay, the amount of penetration was about 16 times more than that of EGF. These results can be regarded as an effective alternative to improve the existing physical transdermal penetration method related to the use of various active ingredients for cosmetics.