• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.823-824
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• 2016

In general, distribution board, panel board and motor control center can be installed over a wide area such as residence of group, building, schools, factories, ports, airports, water service and sewerage, substation and heavy industries that are used to supply converts the voltages extra high voltage into optimal voltage. There are electrical accidents due to rise of contact temperature, loose contact of bus bar, deterioration of the contact resistance, overtemperatue of the bus bars. In this paper, we propose bus bar joints monitoring system with loose connection of bus bar, measuring the joint resistance of busbars and monitoring internal and external heat. The proposed system can be reduced the electrical accidents by maintenance of busbar joints and the temperature of the conductive contact surface of busbars.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.2
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• pp.89-94
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• 2022

In this paper, a discrete-time loop filter(DLF) phase-locked loop with a Frequency Fluctuation Converting Circuit(FFCC) has been proposed. Discrete-time loop filter can improve spur characteristic by connecting the charge pump and voltage oscillator discretely unlike a conventional continuous-time loop filter. The proposed PLL is designed to operate stably by the internal negative feedback loop including the SSC acting as a negative feedback to the discrete-time loop filter of the external negative feedback loop. In addition, the phase noise is further improved by reducing the magnitude of the loop filter output voltage variation through the FFCC. Therefore, the magnitude of jitter has been reduced by 1/3 compared to the conventional structure. The proposed phase locked loop has been simulated with Hspice using the 1.8V 180nm CMOS process.

• Progress in Medical Physics
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• v.14 no.1
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• pp.54-67
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• 2003

The voltage-dependence of N-type calcium current inactivation is U-shaped with the degree of inactivation roughly mirroring inward current. This voltage-dependence has been reported to result from a purely voltage-dependent mechanism. However, $Ca^{2＋}$-dependent inactivation of N-channels has also been reported. We have investigated the role of $Ca^{2＋}$ in N-channel inactivation by comparing the effects of $Ba^{2＋}$and $Ca^{2＋}$ on whole-cell N-current in rat superior cervical ganglion neurons. For individual cells in-activation was always larger in $Ca^{2＋}$ than in $Ba^{2＋}$ even when internal EGTA (11 mM) was replaced with BAPTA (20 mM). The inactivation vs. voltage relationship was U-shaped in both divalent cations. The enhancement of inactivation by $Ca^{2＋}$ was inversely related with the magnitude of inactivation in $Ba^{2＋}$ as if the mechanisms of inactivation were the same in both $Ba^{2＋}$ and $Ca^{2＋}$. In support of this idea we could separate fast ( ${\gamma}$ ～150 ms) and slow ( ${\gamma}$ ～ 2500 ms) components of inactivation in both $Ba^{2＋}$and $Ca^{2＋}$ using 5 sec voltage steps. Differential effects were observed on each component with $Ca^{2＋}$ enhancing the magnitude of the fast component and the speed of the slow component. The larger amplitude of fast component indicates that the more channels inactivate via this pathway with $Ca^{2＋}$ than with $Ba^{2＋}$, but the stable time constants support the idea the fast inactivation mechanism is identical in $Ba^{2＋}$and $Ca^{2＋}$. The results do not support a $Ca^{2＋}$-dependent mechanism for fast inactivation. However, the $Ca^{2＋}$-induced acceleration of the slowly inactivating component could result from a $Ca^{2＋}$-dependent process.

• Journal of radiological science and technology
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• v.40 no.2
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• pp.261-267
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• 2017

The study has attempted to evaluate and compare the image evaluation and exposure dose by respectively applying filter back projection (FBP), the existing test method, and adaptive statistical iterative reconstruction (ASIR) with different values of tube voltage during the low dose computed tomography (LDCT). With the image reconstruction method as basis, chest phantom was utilized with the FBP and ASIR set at 10%, 20% respectively, and the change of tube voltage (100 kVp, 120 kVp). For image evaluation, back ground noise, signal-noise ratio (SNR) and contrast-noise ratio (CNR) were measured, and, for dose assessment, CTDIvol and DLP were measured respectively. In terms of image evaluation, there was significant difference in ascending aorta (AA) SNR and inpraspinatus muscle (IM) SNR with the different amount of tube voltage (p < 0.05). In terms of CTDIvol, the measured values with the same tube voltage of 120 kVp were 2.6 mGy with no-ASIR and 2.17 mGy with 20%-ASIR respectively, decreased by 0.43 mGy, and the values with 100 kVp were 1.61 mGy with no-ASIR and 1.34 mGy with 20%-ASIR, decreased by 0.27 mGy. In terms of DLP, the measured values with 120 kVp were $103.21mGy{\cdot}cm$ with no-ASIR and $85.94mGy{\cdot}cm$ with 20%-ASIR, decreased by $17.27mGy{\cdot}cm$ (about 16.7%), and the values with 100 kVp were $63.84mGy{\cdot}cm$ with no-ASIR and $53.25mGy{\cdot}cm$ with 20%-ASIR, a decrease by $10.62mGy{\cdot}cm$ (about 16.7%). At lower tube voltage, the rate of dose significantly decreased, but the negative effects on image evaluation was shown due to the increase of noise.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.6
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• pp.1-6
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• 2010

We present simulation results on DC characteristics of AlGaN/GaN HEMT having stair-type gate electrodes, in comparison with those of the conventional single gate AlGaN/GaN HEMTs and field-plate enhanced AlGaN/GaN HEMTs. In order to reduce the internal electric field near the gate electrode of conventional HEMT and thereby to increase their DC characteristics, we applied three-layered stacking electrode schemes to the standard AlGaN/GaN HEMT structure. As a result, we found that the internal electric field was decreased by 70% at the same drain bias condition and the transconductance (gm) was improved by 11.4% for the proposed stair-type gate AlGaN/GaN HEMT, compared with those of the conventional single gate and field-plate enhanced AlGaN/GaN HEMTs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.3
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• pp.269-276
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• 2016

This paper presents a 2.65 GHz Doherty power amplifier with internally-matched GaN HEMT. Internal matching circuits were adopted to match its harmonic impedances inside the package. Simultaneously, due to the partially matched fundamental impedance, input and output matching networks become simpler. Bond wires and parasitic elements of transistor package were predicted by EM simulation. For the LTE signal with 6.5 dB PAPR, the implemented Doherty power amplifier shows a power gain of 13.0 dB, a saturated output power of 55.4 dBm, an efficiency of 49.1 %, and ACLR of -26.3 dBc at 2.65 GHz with an operating voltage of 48 V.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.203-207
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• 2000

The sensitivity of ISFET glucose sensor is improved by employing amperometric actuation method. However, this method takes long time to recover the primary output voltage after measurement because of slow migration of the hydrogen ion between internal and external sensing membranes. Consequently, such a recovery-time delaying problem is one of obstacles to a practical use. In this paper, a new method is proposed to control the concentration of hydrogen ion in internal membrane, which applies a reduction potential to the working electrode for supplying hydroxide ion. Experimental results show that the recovery-time was reduced within 2 minute against decades minute of conventional method.

• Korean Journal of Materials Research
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• v.10 no.5
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• pp.360-363
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• 2000

Deformation in the hysteresis loop of $Pb(Zr,Ti)O_3$ (PZT) thin films with various Zr/Ti ratios has been studied by varying the top electrode preparation method and the annealing temperature. Pt/PZT/Pt capacitors was found to be positively poled due to dc plasma potential generated during reactive ion etch (RIE) of Rt. Internal field is formed by space charges trapped at domain boundaries. Aging phenomenon such as constriction in the middle of the hysteresis loop was observed in the PZT film with top electrode deposited by sputtering. Top electrode annealing restores the hysteresis loop by removing the space charges. As Zr/Ti ratio decrease, voltage shift increases and an-nealing temperature at which internal field disappears also increases.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.406-414
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• 1996

We studied the phase formation and the effect of electrical properties of PZT thin films with changing the oxygen partial pressure in cooling after deposition of PZT thin film by reactive sputtering method. The roughness of thin film increased with decreasing the oxygen partial pressure in cooling due to the evaporation on the surface ofthin films and the grain size was not changed very much. The hysteresis property of PZT thin film was improved toward having a good squareness with increasing the cooling oxygen partial pressure. We observed the decrease of remanent polarization, retained polarization and coercive field with decreasing the oxygen partial pressure. Dielectric constant decreased gradually and internal bias field increased in the measurement of dielectric constant-voltage property with decreasing cooling oxygen partial pressure. We observed the increase of nonswitched polarization in the measurement of field accelerated retention and the decrease of nonswitched polarization with increasing the bias time.

• Development and Reproduction
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• v.21 no.1
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• pp.11-18
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• 2017

Potassium channels, the largest group of pore proteins, selectively regulate the flow of potassium ($K^+$) ions across cell membranes. The activity and expression of $K^+$ channels are critical for the maintenance of normal functions in vessels and neurons, and for the regulation of cell differentiation and maturation. However, their role and expression in stem cells have been poorly understood. In this study, we isolated perivascular stem cells (PVCs) from human umbilical cords and investigated the expression patterns of big-conductance $Ca^{2+}$-activated $K^+$ ($BK_{Ca}$) and voltage-dependent $K^+$ ($K_v$) channels using the reverse transcription polymerase chain reaction. We also examined the effect of high glucose (HG, 25 mM) on expression levels of $BK_{Ca}$ and $K_v$ channels in PVCs. $K_{Ca}1.1$, $K_{Ca}{\beta}_3$, $K_v1.3$, $K_v3.2$, and $K_v6.1$ were detected in undifferentiated PVCs. In addition, HG treatment increased the amounts of $BK_{Ca}{\beta}_{3a}$, $BK_{Ca}{\beta}_4$, $K_v1.3$, $K_v1.6$, and $K_v6.1$ transcripts. These results suggested that ion channels may have important functions in the growth and differentiation of PVCs, which could be influenced by HG exposure.