• Title/Summary/Keyword: Intermodulation Distortion(IMD)

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The Design of a RF Automatic Gain Control Amplifier with Low Phase Shift Attenuator (저위상 변화 감쇄기를 이용한 RF 자동 이득 조정 증폭기 설계)

  • Park, Ung-Hee;Chang, Ik-Su;Huh, Jun-Won;Gang, In-Ho
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.1
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    • pp.15-21
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    • 1999
  • A new design of RF automatic gain control amplifier with low phase shift attenuator is proposed. By using the RF AGC amplifier, the output level of amplifier becomes to be constant. The error is 0.1dB. In addition, for arbitrary RF input power, it is possible to design the gain of amplifier to be fixed. If the constant gain is maintained, it is more reliable to make wanted IMD(Intermodulation Distortion) characteeristic amplifier.

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A study on the Design of Predistortion Linearizer using Common-Gate MESFET (공통 게이트 MESFET를 이용한 전치왜곡 선형화기 설계에 관한 연구)

  • 김갑기
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.7
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    • pp.1369-1373
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    • 2003
  • A linear power amplifier is particularly emphasized on the CDMA system using a linear modulation scheme, because IMD which cause adjacent channel interference and co channel interference is mostly generated in a nonlinear power amplifier. In this paper, a new type of linearization technique proposed. It is presented that balanced MESFET Predistortion linearizer added. Experimental result are present for Korea PCS frequency band. The implemented linearizer is applied to a 30㏈m class A power amplifier for simulation performance. Two-tone signals at 1850 MHz and 1851.23 MHz are injected into the main power amplifier. The main power amplifier with a 12.1㏈ gain and a P1㏈ of 30 ㏈m(two-tone) was utilized. The reduction of IMD is around 22㏈.

Power Amplifier Design using the Novel PBG Structure for Linearity Improvement and Size Reduction (선형성 개선과 크기 축소를 위한 새로운 PBG 구조를 이용한 전력증폭기 설계)

  • Choi, Jae-Won;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.7 s.361
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    • pp.29-34
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    • 2007
  • This paper presents a novel photonic bandgap (PBG) structure for size reduction and linearity improvement in power amplifier. The proposed structure is a two-dimensional (2-D) periodic lattice patterned on a dielectric slab that does not require nonplanar fabrication process. Throughout the experi-mental results, this structure has more broad stopband and high suppression performance than conventional three cell PBG and distorted uniplanar compact-PBG (DUC-PBG). This new PBG structure can be applied with power amplifier for linearity improvement. The 3rd intermodulation distortion (IMD3) of the power amplifier using new PBG structure is -36.16 dBc for (code division multiple access) CDMA applications. Compared with power amplifier without the proposed PBG structure, improved IMD3 is -13.49 dBc.

Dual-Band Feedforward Linear Power Amplifier Using Equal Group Delay Signal Canceller (동일 군속도 지연 상쇄기를 이용한 이중 대역 Feedforward 선형 전력 증폭기)

  • Choi, Heung-Jae;Jeong, Yong-Chae;Kim, Hong-Gi;Kim, Chul-Dong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.7
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    • pp.839-846
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    • 2007
  • In this paper, the first attempt to design a novel structure of dual-band feedforward linear power amplifier(FFW LPA) was presented. Up to now, primary technical difficulty has been the extension of the conventional signal canceller to the dual-band operation. Therefore, we propose the design technique of the dual-band equal group delayed carrier canceller, the dual-band equal group delayed intermodulation distortion(IMD) canceller and the dual-band FFW LPA. The operation frequency bands of the implemented dual-band FFW LPA are digital cellular($f_0=880$ MHz) and IMT-2000($f_0=2.14$ GHz) band, which are separated about 1.26 GHz. With the high power amplifier of 120 W PEP for commercial base-station application, IMD cancellation loop shows 20.45 dB and 25.04 dB loop suppression at each band of operation for 100 MHz. From the adjacent channel leakage ratio(ACLR) measurement with CDMA IS-95A 4FA and WCDMA 4FA signal, we obtained 16.52 dB improvement at the average output power of 41.5 dBm for digital cellular band, and 18.59 dB improvement at the average output power of 40 dBm for IMT-2000 band simultaneously.

Nonlinearity Compensation of Electroabsorption Modulator by using Semiconductor Optical Amplifier (반도체 광증폭기를 이용한 전계흡수 광변조기 비선형성 보상)

  • Lee, Chang-Hyeon;Son, Seong-Il;Han, Sang-Guk
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.5
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    • pp.23-30
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    • 2000
  • To compensate the nonlinearity of electroabsorption modulator(EAM) resulting from its near exponential transfer function, a semiconductor optical amplifier(SOA) that has a log transfer function is used. Since the transfer function of SOA is inverse to that of EAM, the intermodulation distortion(IMD) of EAM can be reduced by cascading SOA to EAM. Also, the RF gain can be increased by the optical gain of SOA. For these reasons, spurious free dynamic range(SFDR) of EAM is enhanced by connecting SOA to EAM in series and operating in gain salutation region. To improve the nonlinearity compensation of EAM, the increased gain of SOA is required and the slope of gain saturation, the ratio of gain to input SOA power, needs to be steep. However, signal spontaneous beat noise that is the dominant system noise increases in proportion to the gain such that the SFDR of EAM is reduced. The higher the gain of SOA is, the more ASE is increased. Thus the noise level of system is increased and the following SFDR of EAM is decreased. The slope of gain saturation region and ASE of have trade-off relation and the optimization is achieved at 8㏈ optical gain. 9㏈ enhancement of SFDR of EAM is obtained. This scheme is easy to embody the linear EAM and the integration with three components (DFB-LD, EAM and SOA) offers many merits, such as low insertion loss, low chirping and low polarization sensitivity.

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Design of a Doherty Power Amplifier Using the Spiral PBG Structure for Linearity Improvement (나선형 구조의 PBG를 적용한 도허티 전력증폭기의 선형성 개선)

  • Kim, Sun-Young;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.1
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    • pp.115-119
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    • 2008
  • In this paper, the linearity of Doherty power amplifier has been improved by applying a new Photonic Bandgap(PBG) structure on the output of amplifier. The reposed spiral PBG structure is a two-dimensional(2-D) periodic lattice patterned on a dielectric slab that does not require nonplanar fabrication process. This structure has more broad stopband and high suppression performance than the conventional three cell PBG. Also, It has a sharp skirt property. We obtained the 3rd-order intermodulation distortion(IMD3) of -33dBc for CDMA applications with that of maintaining the constant power added efficiency(PAE), the IMD3 performance is improved as much as -8 dB compared with a Doherty power amplifier without PBG structure. Moreover, the physical length of PBG is shortened, therefore the whole amplifier circuit size is considerably reduced.

Doherty Amplifier Design Using a Compact Slow-Wave Microstrip Branch-Line coupler for Linearity Improvement (Compact Slow-Wave Microstrip Branch-Line Coupler를 이용한 도허티 증폭기의 선형성 개선)

  • Kim, Tae-Hyung;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.9
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    • pp.55-59
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    • 2008
  • In this paper, the linearity of Doherty amplifier has been improved by applying a compact slow-wave microstrip branch-line coupler on the output of Doherty amplifier. The proposed branch coupler has four microstrip high-low impedance resonant cells periodically placed inside the branch-line coupler to result in high slow-wave effect. The new coupler not only effectively reduces the occupied area to 30% of the conventional branch-line coupler at 1.8GHz, but also has high second harmonic suppression performance. We obtained the 3rd-order intermodulation distortion ($IMD_3$) of -31.16 dBc for CDMA applications with that of maintaining the constant power added efficiency (PAE). The IMD3 performance is improved as much as -7 dBc compared with a Doherty amplifier.

Design of Predistortion Linearizer using Common-Gate MESFET (공통 게이트 MESFET를 이용한 전치왜곡 선형화기 설계)

  • 주성남;박청룡;최조천;최충현;김갑기
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.10a
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    • pp.53-56
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    • 2003
  • A linear power amplifier is particularly emphasized on the CDMA system using a linear modulation scheme, because IMD which cause adjacent channel interference and co channel Interference is mostly generated in a nonlinear power amplifier. In this paper, a new type of linearization technique proposed. It is presented that balanced MESFET predistortion linearizer added. Experimental result are present for Korea PCS frequency band. The implemented linearizer is applied to a 30dBm class. A power amplifier for simulation performance. Two-tone signals at 1850 MHz and 1851.23 MHz are injected into the main power amplifier. The main power amplifier with a 12.1dB gain and a P1dB of 30 dBm(two-tone) was utlized. The reduction of IMD is around 22dB.

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Design and Fabrication of Linear Power Amplifier for IMT-2000 Using FeedForward Method Combined Predistortion Method (전치왜곡 방식이 결합된 FeedForward 방식을 이용한 IMT-2000용 선형 전력 증폭기의 설계 및 제작)

  • 김경호;정재호;김성민;최현철
    • Proceedings of the IEEK Conference
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    • 2000.11a
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    • pp.341-344
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    • 2000
  • Advanced FeedForward method use Predistortion method and FeedForward method simultaneously. This method better than original Feedforward method in linearity and supply smaller power to pre-power amplifier than different methods, and then it has higher power efficiency and better linearity than original Feedforward method. A linear power amplifier using Advanced feedforward method is designed and fabricated for IMT-2000 transmission system (2110㎒ -2170M㎓). This amplifier's power gain is about 40㏈ and it's 3-rd IMD(Intermodulation distortion) are smaller than about -55㏈c(@ 10MHz).

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A implementation of predistorter using the Series Diode Linearizer for RF Amplifiers (RF전력증폭기에 직렬다이오드선형화기를 이용한 전치보상기 구현)

  • Won, Yong-Kyu;Yun, Man-Soo;Lee, Sang-Cheol;Chung, Chan-Soo
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.52 no.1
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    • pp.28-34
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    • 2003
  • In this paper, a predistortion linearizer using series diode is proposed for linearizing the power amplifier in microwave radio systems. The power amplifier should be operated near saturation region to achieve high efficiency. But at this region, amplitude and phase distortions of the amplifier remarkably increase with the increase of input power and cause a significant adjacent channel interference. The linearizer is composed of a series diode with a parallel capacitor, which provides positive amplitude and negative phase deviations with the increasing input power. This type of linearizer using the nonlinearity of diode has improved the C/I(Carrier to Intermodulation Distortion) ratio well. By applying this linearizer to two-tone 880MHz power amplifier, adjacent channel leakage power is improved up to 5dBm.