• 제목/요약/키워드: Interfacial temperature

검색결과 616건 처리시간 0.033초

Positive Exchange Bias in Thin Film Multilayers Produced with Nano-oxide Layer

  • 전병선;황찬용
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.304-305
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    • 2013
  • We report a positive exchange bias (HE) in thinmultilayered filmscontaining nano-oxide layer. The positive HE, obtained for our system results from an antiferromagnetic coupling between the ferromagnetic (FM) CoFe and the antiferromagnetic (AFM) CoO layers, which spontaneously form on top of the nano-oxide layer (NOL). The shift in the hysteresis loop along the direction of thecooling field and the change in the sign of exchange bias are evidence of antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. Our calculation indicates that uncompensated oxygen moments in the NOL results in antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. One of the interesting features observed with our system is that it displays the positive HE even above the bulk Neel temperature (TN) of CoO. Although the positive HEsystem has a different AFM/FM interfacial spin structure compare to that of the negative HE one, the results of the angular dependence measurements show that the magnetization reversal mechanism can be considered within the framework of the coherent rotation model.

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다결정 3C-SiC/TiW Ohmic Contact에 관한 연구 (Study for ohmic contact of polycrystalline 3C-SiC/TiW)

  • 온창민;정귀상
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1311-1312
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    • 2006
  • This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using 4he C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}{\cdot}cm^2$ of was obtained due to the improved interfacial adhesion.

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충전제-탄성체 상호작용. 8. 불소 처리한 나노크기의 실리카가 폴리우레탄 기지 복합재료의 기계적 계면특성 및 열안정성에 미치는 영향 (Filler-Elastomer Interactions. 8. Influence of Fluorinated Nanoscaled Silicas on Mechanical Interfacial Properties and Thermal Stabilities of Polyurethane Matrix Composites)

  • 박수진;조기숙
    • 폴리머
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    • 제27권2호
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    • pp.91-97
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    • 2003
  • 각기 다른 온도에서 불소화 표면처리에 의한 실리카의 표면특성을 X-선 광전 분광법 그리고 접촉각을 통해 관찰하였으며, 복합재료의 기계적 계면물성과 열안정성에 미치는 영향은 인열 에너지와 분해 활성화 에너지를 통해 고찰하였다. 실리카 표면 자유 에너지의 London 비극성 요소와 불소작용기는 불소화 처리 온도에 따라 증가하였으며, 결과적으로 실리카/폴리우레탄 복합재료의 인열 에너지를 향상시켰다. 또한 복합재료의 열안정성은 불소화 함량에 따라 증가하였다. 이러한 결과는 실리카 표면에 도입된 불소작용기가 본 실험의 복합재료 시스템 내에서 실리카와 폴리우레탄 계면 사이의 분자간 상호작용을 향상시키는 주요한 인자로 작용한 것으로 사료된다.

3차원 소자 집적을 위한 Cu-Cu 접합의 계면접착에너지에 미치는 후속 열처리의 영향 (Effect of Post-Annealing Conditions on Interfacial Adhesion Energy of Cu-Cu Bonding for 3-D IC Integration)

  • 장은정;;;;현승민;이학주;박영배
    • 한국재료학회지
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    • 제18권4호
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    • pp.204-210
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    • 2008
  • $1.5\;{\mu}m$-thick copper films deposited on silicon wafers were successfully bonded at $415^{\circ}C$/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than $10.4\;J/m^2$ as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than $300^{\circ}C$ had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over $400^{\circ}C$. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.

Bi-10Cu-20Sb-0.3Ni 고온용 무연 솔더와 Cu와의 계면 반응 특성 (Interfacial Reaction Characteristics of a Bi-20Sb-10Cu-0.3Ni Pb-free Solder Alloy on Cu Pad)

  • 김주형;현창용;이종현
    • 마이크로전자및패키징학회지
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    • 제17권1호
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    • pp.1-7
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    • 2010
  • 본 연구에서는 $430^{\circ}C$에서 Bi-10Cu-20Sb-0.3Ni 조성의 솔더 합금과 Cu간의 리플로루 솔더링 시 생성되는 계면 반응층을 분석하였고, 솔더링 시간에 따른 계면 반응층의 성장 속도를 측정하였다. 리플로우 솔더링 후 Bi-10Cu-20Sb-0.3Ni/Cu의 계면 반응층을 분석한 결과, $(Cu,Ni)_2Sb$$Cu_4Sb$ 금속간 화합물층, 그리고 Bi 조성과 $Cu_4Sb$ 상이 주기적으로 존재하는 아지랑이 형상층이 연속적으로 생성되었다. 또한 120 s까지의 솔더링 시간 영역에서는 계면 반응층의 총 두께가 솔더링 시간에 대해 직선적으로 증가하는 경향이 관찰되었다. 합금원소로 첨가된 Ni은 가장 두꺼운 $Cu_4Sb$ 반응층의 형성에 참여하지 않아 계면 금속간 화합물의 성장 속도를 억제시키는 작용을 나타내지 못했다.

유한요소 해석을 통해 온도와 상대습도에 따른 수분 흡습 및 탈습을 반영한 반도체 패키지 구조의 박리 예측 (Delamination Prediction of Semiconductor Packages through Finite Element Analysis Reflecting Moisture Absorption and Desorption according to the Temperature and Relative Humidity)

  • 엄희진;황연택;김학성
    • 마이크로전자및패키징학회지
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    • 제29권3호
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    • pp.37-42
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    • 2022
  • 최근 반도체 패키지 구조는 점점 더 얇아지고 복잡해지고 있다. 두께가 얇아짐에 이종 계면에서 물성차이에 의한 박리는 심화될 수 있으며 따라서 계면의 신뢰성이 패키징 설계에 중요한 요소라 할 수 있다. 특히, 반도체 패키징에 많이 사용되는 폴리머는 온도와 수분에 영향을 크게 받기 때문에 환경에 따른 물성 변화 고려가 필수적이다. 따라서, 본 연구에서는 다양한 온도조건에서 수분의 흡습과 탈습을 모두 고려한 패키지 구조의 계면 박리 예측을 유한 요소 해석을 통해 수행하였다. 확산계수와 포화 수분 함량과 같은 재료의 물성은 흡습 실험을 통해 확보하였으며, 흡습 이후 TMA 와 TGA 를 통하여 각 재료의 수분 팽창 계수를 확보하였다. 각 계면의 접합 강도 평가를 위해 수분의 영향을 고려하여 다양한 온도 조건에서 마이크로 전단 실험을 수행하였다. 이러한 물성을 바탕으로 온도와 수분에 의해 발생하는 변형을 모두 고려한 패키지 박리 예측 해석을 수행하였으며, 결과적으로 리플로우 공정 동안의 실시간 수분 탈습 거동을 고려한 계면 박리 예측을 성공적으로 수행하였다.

WETTING PROPERTIES AND INTERFACIAL REACTIONS OF INDIUM SOLDER

  • Kim, Dae-Gon;Lee, Chang-Youl;Hong, Tae-Whan;Jung, Seung-Boo
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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    • pp.475-480
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    • 2002
  • The reliability of the solder joint is affected by type and extent of the interfacial reaction between solder and substrates. Therefore, understanding of intermetallic compounds produced by soldering in electronic packaging is essential. In-based alloys have been favored bonding devices that demand low soldering temperatures. For photonic and fiber optics packaging, m-based solders have become increasingly attractive as a soldering material candidate due to its ductility. In the present work, the interfacial reactions between indium solder and bare Cu Substrate are investigated. For the identification of intermetallic compounds, both Scanning Electron Microscopy(SEM) and X-Ray Diffraction(XRD) were employed. Experimental results showed that the intermetallic compounds, such as Cu$_{11}$In$_{9}$ was observed for bare Cu substrate. Additionally, the growth rate of these intermetallic compounds was increased with the reaction temperature and time. We found that the growth of the intermetallic compound follows the parabolic law, which indicates that the growth is diffusion-controlled.d.

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에폭시/고무 거시계면에서 장시간 절연파괴전압에 대한 연구 (Study on the Long Time Breakdown Voltage in the Macro Interface between Epoxy and Rubber)

  • 박우현;이기식
    • 한국전기전자재료학회논문지
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    • 제15권11호
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    • pp.1003-1008
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    • 2002
  • In this paper, the estimation of lifetime with the various conditions of the interface between toughened epoxy and rubber which are consisting materials of underground power delivery system has been studied. After the measurement of the short time AC interfacial breakdown strength on macro interfaces at room temperature, the breakdown time at several voltages were measured under the constant voltages lower than the short time breakdown voltage. The long time breakdown voltage was calculated by using Inverse Power Law. Two types of interfaces was studied. One was the interface between toughened epoxy and EPDM(Ethylene Prorylene Diene Terpolymer). The other was the interface between toughened epoxy and silicon rubber. Interfacial pressure and roughness of interfaces was determined through the characteristic of short time AC interfacial breakdown strength. Oil condition was no oiled, low viscosity oiled and high viscosity oiled. High viscosity oiled interface between Toughened epoxy and silicon rubber had the best lifetime exponent, 20.69. and the breakdown voltage of this interface after 30 years was evaluated 19.27㎸.

Interfacial Properties of Electrodeposited Carbon Fibers Reinforced Epoxy Composites Using Fragmentation Technique and Acoustic Emission

  • Yeong-Min Kim;Joung-Man Park;Ki-Won Kim;Dong-Jin Yoon
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 1999년도 추계학술발표대회 논문집
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    • pp.28-31
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    • 1999
  • Carbon fiber/epoxy composites using electrodeposited monomeric and polymeric coupling agents were compared with the dipping and the untreated cases. Treating conditions such as time, concentration and temperature were optimized. Four-fibers embedded micro-composites were prepared for fragmentation test. Interfacial properties of four-fiber composites with different surface treatments were investigated with simultaneous acoustic emission (AE) monitoring. The microfailure mechanisms occurring from fiber break, matrix and interlayer crackings were examined by AE parameters and an optical microscope. It was found that interfacial shear strength (IFSS) of electrodeposited carbon fibers was much higher than the other cases under dry and wet conditions. Well separated and different-shaped AE groups occurs for the untreated and ED treated case, respectively.

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Improved interfacial stress analysis of a plated beam

  • Hao, Sheng-Wang;Liu, Yan;Liu, Xiao-Dan
    • Structural Engineering and Mechanics
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    • 제44권6호
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    • pp.815-837
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    • 2012
  • A plated beam is strengthened by bonding a thin plate to the tension face; it often fails because of premature debonding of the thin plate from the original beam in a brittle manner. A sound understanding of the mechanism of such debonding failure is very important for the effective use of this strengthening technique. This paper presents an improved analytical solution for interfacial stresses that incorporates multiple loading conditions simultaneously, including prestress, mechanical and thermal loads, and the effects of adherend shear deformations and curvature mismatches between the beam and the plate. Simply supported beams bonded with a thin prestressing plate and subjected to both mechanical and thermal loading were considered in the present work. The effects of the curvature mismatch and adherend shear deformations of the beam and plate were investigated and compared. The main mechanisms affecting the distribution of interfacial stresses were analyzed. Both the normal and shear stresses were found to be significantly influenced by the coupled effects of the elastic moduli with the ratios $E_a/E_b$ and $E_a/E_p$.