• 제목/요약/키워드: Interfacial temperature

검색결과 616건 처리시간 0.022초

$Pt/CeO_2$ 촉매와 Tight Contact 한 상태의 Model Soot 산화에 NO가 미치는 영향에 관한 실험적 연구 (Effect of NO on Catalytic Soot Oxidation in Tight Contact with $Pt/CeO_2$ Using a Flow Reactor System)

  • 이동일;송창훈;송순호;전광민
    • 한국자동차공학회논문집
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    • 제19권3호
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    • pp.52-56
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    • 2011
  • Active regeneration in CDPF requires $O_2$ which regenerates soot at high temperature. However, small amount of NO can interrupt $O_2$ regeneration in CDPF. To verify this phenomena, soot oxidation experiments using a flow reactor with a $Pr/CeO_2$ catalyst are carried out to simulate Catalyzed Diesel Particulate Filter (CDPF) phenomena. Catalytic soot oxidation with and without small amount of NO is conducted under tight contact condition. As the heating rate rises, the temperature gap of maximum reaction rate is increased between with and without 50ppm NO. To accelerate the $NO_2$ de-coupling effect, CTO process is performed to eliminate interfacial contact for that time. As CTO process is extended, temperature which indicates peak reaction rate increases. From this result, it is found that small amount of NO can affect tight contact soot oxidation by removal of interfacial contact between soot and catalyst.

확산 접합에 의해 제조된 텅스텐-레늄 합금/티타늄/그래파이트 접합체의 미세구조 및 고온 안정성 (Interfacial Microstructure of Diffusion-Bonded W-25Re/Ti/Graphite Joint and Its High-Temperature Stability)

  • 김주형;백창연;김동석;임성택;김도경
    • 한국재료학회지
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    • 제26권12호
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    • pp.751-756
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    • 2016
  • Graphite was diffusion-bonded by hot-pressing to W-25Re alloy using a Ti interlayer. For the joining, a uniaxial pressure of 25 MPa was applied at $1600^{\circ}C$ for 2 hrs in an argon atmosphere with a heating rate of $10^{\circ}C\;min^{-1}$. The interfacial microstructure and elemental distribution of the W-25Re/Ti/Graphite joints were analyzed by scanning electron microscopy (SEM). Hot-pressed joints appeared to form a stable interlayer without any micro-cracking, pores, or defects. To investigate the high-temperature stability of the W-25Re/Ti/Graphite joint, an oxy-acetylene torch test was conducted for 30 seconds with oxygen and acetylene at a 1.3:1 ratio. Cross-sectional analysis of the joint was performed to compare the thickness of the oxide layer and its chemical composition. The thickness of W-25Re changed from 250 to $20{\mu}m$. In the elemental analysis, a high fraction of rhenium was detected at the surface oxidation layer of W-25Re, while the W-25Re matrix was found to maintain the initial weight ratio. Tungsten was first reacted with oxygen at a torch temperature over $2500^{\circ}C$ to form a tungsten oxide layer on the surface of W-25Re. Then, the remaining rhenium was subsequently reacted with oxygen to form rhenium oxide. The interfacial microstructure of the Ti-containing interlayer was stable after the torch test at a temperature over $2500^{\circ}C$.

Co/Cu인공초격자에서 저온 열처리가 자기저항에 미치는 영향 (Effect of Low Temperature Annealing on the Magnetoresistance in Co/Cu Artificial Superlattice)

  • 민경익;송용진;이후산;주승기
    • 한국자기학회지
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    • 제3권4호
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    • pp.305-309
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    • 1993
  • 본 연구에서는 고주파 마그네트론 스퍼터링에 의해 형성된 Co/Cu 인공초격자를 저온에서 열처리함으로써 열적 안정성을 펑가하고 수반된 계면 반응이 자기저항에 미치는 영향을 조사하였다. Cu 사잇층 두께, Fe 바닥층 두께, 바닥층의 종류에 따른 열처리 거동의 차이를 조사하였으며, X선 회절분석과 저항분석을 통해 계면반응과 자기저항의 상관관계를 검토하였다. Co/Cu 인공초격자를 저 온($450^{\circ}C$ 이하) 에서 급속열처리하는 경우 열처리 온도가 증가함에 따라 Cu 사잇층 두께가 얇 을 때 ($7\AA$)에는 기존의 보고와 마찬가지로 자기저항이 일방적으로 감소하였으나 Cu 사잇층 두께가 두꺼울 때($20~25\AA$)에는 이와는 달리 자기저항이 증가하는 것으로 나타났다. 소각 X선 회절 분석 결과에 의하면, 이는 계면 명확성이 증대되기 때문인 것으로 밝혀졌다. Fe 바닥층 두 께가 두꺼울수록 열적 안정성이 우수하였다. (200)우선방위가 발달한 Cu 바닥층의 경우 Fe 바닥층보다 낮은 온도에서 계면반응(Co와 Cu의 분리) 이 일어났는데, 이는 결정방향에 따른 확산속도의 차이로 설명될 수 있었다.

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갈륨과 Cu/Au 금속층과의 계면반응 연구 (Study on the Interfacial Reactions between Gallium and Cu/Au Multi-layer Metallization)

  • 배준혁;손윤철
    • 마이크로전자및패키징학회지
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    • 제29권2호
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    • pp.73-79
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    • 2022
  • 본 연구에서는 최근 저온접합 소재로 각광받고 있는 Ga과 대표적인 전극 물질인 Cu와의 반응연구를 실시하여 저온 솔더링 적용시 필요한 정보들을 확인하고자 하였다. 80-200℃ 온도범위에서 Ga과 Cu/Au 기판을 반응시켜 계면반응 및 금속간화합물(IMC) 성장을 관찰하고 분석하였다. 반응계면에서 성장하는 주요한 IMC는 CuGa2 상이었으며 그 상부에는 작은 입자크기를 가지는 AuGa2 IMC 그리고 하부에는 얇은 띠 형상의 Cu9Ga4 IMC가 형성되었다. CuGa2 입자들은 scallop 형상을 보이며 Cu6Sn5 성장의 경우와 비슷하게 반응시간이 증가함에 따라서 큰 형상변화없이 입자 크기가 증가하였다. CuGa2 성장기구를 분석한 결과 120-200℃ 온도범위에서 시간지수는 약 3.0으로 산출되었고, 활성화에너지는 17.7 kJ/mol로 측정되었다.

Pb(Zr, Ti)$O_3$ 박막에서 결정립 크기 포화 현상에 관한 연구 (A Study on the Saturation of Grain Size in Pb(Zr, Ti)$O_3$ Thin Films)

  • 이장식;김찬수;주승기
    • 한국세라믹학회지
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    • 제37권6호
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    • pp.530-536
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    • 2000
  • During the grain growth of the PZT thin films by selective nucleation method using PZT seed, it was found that the grain size was saturated with the annealing temperature. The saturation of grain size was analyzed by the interfacial energy which appeared during the crystallization. The factors affecting the saturation of grain size were found to be the interfacial energy between perovskite phase and pyrochlore phase, and PZT thin film and the bottom Pt electrode. When the ion damage was introduced to the grain-size saturated PZT thin films, further lateral growth was observed. Pt bottom electrode thickness was changed to control the interfacial energy between the PZT thin film and the Pt bottom electrode. When Pt thickness was increased, the grain size was also increased, because the lattice parameter of Pt films was increased with the thickness of the Pt films. The incubation time of nucleation was increased with the amount of the ion damage on the Pt films.

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직접 접합된 실리콘 기판쌍에 있어서 계면 산화막의 상태와 이의 새로운 평가 방법 (Condition and New Testing Method of Interfacial Oxide Films in Directly Bonded Silicon Wafer Pairs)

  • 주병권;이윤희;정회현;정경수;;;차균현;오명현
    • 전자공학회논문지A
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    • 제32A권3호
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    • pp.134-142
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    • 1995
  • We discovered that each distinct shape of the roof-shaped peaks of (111) facets, which are generated on (110) cross-section of the directly bonded (100) silicon wafer pairs after KOH etching, can be mapped to one of three conditions of the interfacial oxide existing at the bonding interface as follows. That is, thick solid line can be mapped to stabilization, thin solid line to disintegration, and thin broken line to spheroidization. also we confirmed that most of the interfacial oxides of a well-aligned wafer pairs were disintegrated and spheroidized through high-temperature annealing process above 900$^{\circ}$C while the oxide was stabilized persistently when two wafers are bonded rotationally around their common axis perpendicular to the wafer planes.

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반도전층/XLPE 의 불규칙한 유전 및 절연 특성 (Anormal Dielectric and Insulation Properties of Semiconductor/XLPE)

  • 이종찬;김광수;박대희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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    • pp.53-57
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    • 2002
  • Reduction of insulation thickness would be beneficial not only for increasing the cable length but would also improve its thermal performance. An interfacial diffusion method was devised to reduce insulation thickness by improving the interfacial properties of XLPE cable insulation. In this paper, to evaluate superficially the interface properties between XLPE insulation and semiconducting layer, the dielectric and insulation properties of tan${\delta}$ and volume resistance were measured with temperature dependence. Above the results, dielectirc and insulation properties with semiconductor/XLPE were more anormal than its bulk caused by the interfacial properties.

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Review of Entrainment and Interfacial Stability in Thermosyphons and Capillary-Driven Heat Pipes

  • Kim, B.H.;Kim, C.J.
    • 태양에너지
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    • 제18권3호
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    • pp.205-215
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    • 1998
  • Entrainment in thermosyphons and heat pipes was characterized in view of the interfacial stability associated with the critical Weber number and the entrainment limit at the onset of liquid entrainment from the liquid or wicked interface. Both literature review and theoretical analysis on the entrainment models were peformed in order to evaluate accuracy of the predicted value. For this purpose, the models were categorized in two groups according to their entrainment mechanism and interfacial configurations, i.e., the wave-induced entrainment and the shear-induced entrainment, respectively. Thus, the twelve models(five models for the wave-induced entrainment and seven for the shear induced entrainment) were examined to obtain individual trends and their discrepancies from the general tendency of the overall models. As a result, the critical Weber numbers and entrainment limits were calculated and represented as a function of vapor temperature for the chosen characteristic dimensions of the interface.

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Simultaneous Control of Au Nanotube Lengths and Pore Sizes with a Single Kind of Polycarbonate Membrane via Interfacial Deposition at the Air/Water Interface

  • Pyo, Myoung-Ho;Joo, Jung-Sook;Jung, Youn-Su
    • Bulletin of the Korean Chemical Society
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    • 제28권8호
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    • pp.1285-1288
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    • 2007
  • Au was electrolessly deposited on polycarbonate (PC) membranes (0.1 μm pores) at the air/water interface. It was found that the Au nanotube dimension can be controlled by adjusting the plating temperature and the solution composition. Interfacial deposition of Au at relatively low temperatures (4℃) produced long nanotubes, which run through the whole membrane thickness with small openings. Increase of plating temperatures resulted in the decrease of nanotube lengths and Au film thicknesses. It was also disclosed that the inside-diameter of Au nanotubes can be controlled with negligible variations in length by changing the composition of a plating solution.

An Experimental Investigation of the Interfacial Condensation Heat Transfer in Steam/water Countercurrent Stratified Flow in a Horizontal Pipe

  • Chu, In-Cheol;Yu, Seon-Oh;Chun, Moon-Hyun;Kim, Byong-Sup;Kim, Yang-Seok;Kim, In-Hwan;Lee, Sang-Won
    • 한국원자력학회:학술대회논문집
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    • 한국원자력학회 1998년도 춘계학술발표회논문집(1)
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    • pp.565-570
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    • 1998
  • An interfacial condensation heat transfer phenomenon in a steam/water countercurrent stratified flow in a nearly horizontal pipe has been experimentally investigated. The present study has been focused on the measurement of the temperature and velocity distributions within the water layer. In particular, the water layer thickness used in the present work is large enough so that the turbulent mixing is limited and the thermal stratification is established. As a result, the thermal resistance of the water layer to the condensation heat transfer is increased significantly. An empirical correlation of the interfacial condensation heat transfer has been developed. The present correlation agrees with the data within $\pm$15%

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