• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.2
• /
• pp.52-59
• /
• 2023

The effects of dielectric curing temperature and temperature/humidity treatment conditions on the interfacial adhesion energies between Ti diffusion barrier/polybenzoxazole (PBO) dielectric layers were systematically investigated for Cu redistribution layer applications of fan-out wafer level package. The initial interfacial adhesion energies were 16.63, 25.95, 16.58 J/m² for PBO curing temperatures at 175, 200, and 225 ℃, respectively. X-ray photoelectron spectroscopy analysis showed that there exists a good correlation between the interfacial adhesion energy and the C-O peak area fractions at PBO delaminated surfaces. And the interfacial adhesion energies of samples cured at 200 ℃ decreased to 3.99 J/m² after 500 h at 85 ℃/85 % relative humidity, possibly due to the weak boundary layer formation inside PBO near Ti/PBO interface.

• Journal of the Korean Ceramic Society
• /
• v.43 no.5 s.288
• /
• pp.270-276
• /
• 2006

LSGM(($La_xSr_{1-x})(Ga_yMg_{1-y})O_3$) electrolyte is known to show very serious interfacial reaction with other unit cell components, especially with an anode. Such an interfacial reaction induced the phase instability of constituent component and deterioration of the unit cell performance, which become the most challenging issues in LSGM-based SOFCs. In this study, we fabricated LSGM($La_{0.8}Sr_{0.2}Ga_{0.83}Mg_{0.17}O_x$) electrolyte supported-type cell in order to avoid such interfacial problem by lowering the heat-treatment temperature of the electrode fabrication. According to the microstructural and phase analysis, there was no serious interfacial reaction at both electrolyte/anode and electrolyte/cathode interfaces. Moreover, from the electrochemical characterization of the unit cell performance, there was no distinct deterioration of the open cell voltage as well as an internal cell resistance. These results demonstrate the most critical point to be concerned in LSGM-based SOFC is either to find a proper electrode material which will not give any interfacial reaction with LSGM electrolyte or to properly adjust the processing variables for unit cell fabrication, to reduce the interfacial reaction.

• Journal of Korea Foundry Society
• /
• v.24 no.5
• /
• pp.281-289
• /
• 2004

The present study focused on the estimation of the interfacial heat transfer coefficient as a function of the surface temperature of the aluminum casting at the mold/casting interface to investigate the effects of superheat and coating layer. The casting experiments of aluminum into a cylindrical copper mold were systematically conducted to obtain the thermal history during solidification. The thermal history recorded by four thermocouples embedded both in the mold and the casting was used to solve the inverse heat conduction problem using Beck's method. The effects of superheat and coating on the interfacial heat transfer coefficient in the liquid state, during the solidification, and in the solid state were comparatively discussed. In the liquid state, the interfacial heat transfer coefficient is thought to be affected by the roughness of the mold, the wettability of the casting on the mold surface, and the thermophysical properties of the coating layer. When the solidification begins, the air gap forms between the casting and the mold, and the interfacial heat transfer coefficient becomes a function of the air gap as well as surface roughness and the superheat. In the solid phase, it depends only upon the thermal conductivity and the thickness of the air gap. The coating layer reduces seriously the interfacial heat transfer coefficient in the liquid state and during the solidification.

• Computational Structural Engineering
• /
• v.8 no.1
• /
• pp.173-186
• /
• 1995

It is well known that structures constructed by bonding two or more materials and then subjected to temperature change experience thermal stress. This stress results from thermal expansion mismatch of materials. The present paper derives formulas for the stresses in a bimaterial axisymmetric disk which is subjected to a uniform temperature change. First, an approximate solution following strength-of-materials principles is developed. However, the strength-of-materials solution has difficulty in predicting both the peak value of interfacial stresses and its associated distribution. Next, a solution consistent with the theory of elasticity is developed by way of an eigenfunction expansion approach. The eigenfunction analysis is compared with finite element stress analysis results for a specific numerical example. Finite element analysis results show that the interfacial stresses are adequately predicted by eigenfunction solution. Therefore, the method developed in this paper will be useful in determination of the interfacial stress state.

• Korean Journal of Materials Research
• /
• v.21 no.9
• /
• pp.482-485
• /
• 2011

$La_{0.6}Sr_{0.4}MnO_3$ (LSMO) thin films, which are known as colossal magnetoresistance materials, were prepared on fused silica thin films by conventional RF magnetron sputtering, and the interfacial reactions between them were investigated by rapid thermal processing. Various analyses, namely, X-ray diffraction, transmission electron microscopy combined with energy adispersive X-ray spectrometry, and secondary ion mass spectrometry, were performed to explain the mechanism of the interfacial reactions. In the case of an LSMO film annealed at $800^{\circ}C$, the layer distinction against the underplayed $SiO_2$ was well preserved. However, when the annealing temperature was raised to $900^{\circ}C$, interdiffusion and interreaction occurred. Most of the $SiO_2$ and part of the LSMO became amorphous silicate that incorporated La, Sr, and Mn and contained a lot of bubbles. When the annealing temperature was raised to $950^{\circ}C$, the whole stack became an amorphous silicate layer with expanded bubbles. The thermal instability of LSMO on fused silica should be an important consideration when LSMO is integrated into Si-based solid-state devices.

• Journal of Surface Science and Engineering
• /
• v.32 no.6
• /
• pp.695-702
• /
• 1999

We have explored the factors affecting the resistivity of Cu (Mg) alloy, which was prepared by sputtering. The results show that the resistivity is a function of Mg content, annealing temperature, annealing time, and Cu-alloy thickness. Addition of Mg to copper increases the resistivity through solute scattering. In addition, increasing Mg content promotes the interfacial reaction between Mg and SiO$_2$ to produce the free silicon and the generated free silicon dissolves into copper, resulting in a significant increase of resistivity. Furthermore, increasing oxidation temperature rapidly decreases the resistivity at the initial stage of oxidation and then continues to increase the resistivity to the saturation value with increasing oxidation time. The saturation value depends on the residual Mg content and the thickness of the alloy. TEM and AES analyses reveal that dense, uniform MgO grows to the limiting thickness of about $150\AA$. However, interfacial MgO does not show the limiting thickness, instead continues to grow until Mg is completely exhausted. From these facts, we proposed the maximum available Mg content needed to from the dense MgO on the surface and suppress the excessive interfacial reaction.

• Nuclear Engineering and Technology
• /
• v.32 no.2
• /
• pp.142-156
• /
• 2000

An experimental study of steam condensation on a subcooled thick water layer (0.018 ~0.032 m) in a countercurrent stratified flow has been performed using a nearly horizontal circular pipe. A total of 103 average interfacial condensation heat transfer coefficients were obtained and parametric effects of steam and water flow rates and the degree of subcooling on condensation heat transfer were examined. The measured local temperature and velocity distributions in the thick water layer revealed that there was a thermal stratification due to the lack of full turbulent thermal mixing in the lower region of the water layer Two empirical Nusselt number correlations, one in terms of average steam and water Reynolds numbers, and the water Prandtl number, and the other in terms of the Jakob number in place of the Prandtl number, which agree with most of the data within $\pm$ 25%, were developed based on the bulk flow properties. Comparisons of the present data with existing correlations showed that the present data were significantly lower than the values predicted by existing correlations.

• Journal of Korea Foundry Society
• /
• v.20 no.1
• /
• pp.21-28
• /
• 2000

Ni and Ni-Cr porous metals which are estimated to be easy to fabricate by squeeze casting are used as strengtheners for composite materials. As a matrix material, Al-7%wtSi-0.3 wt%Mg(AC4C) has been used. In case of Ni/AC4C and Ni-Cr/AC4C composite, $750^{\circ}C$ melt temperature and minimum 25 MPa squeezing pressure are needed to produce sound composite materials. The observation of interfacial reaction zone at various heat treatment condition showed that solutionizing temperature of above 520^{\circ}C$, the interfacial reaction zone increased proportionally with increasing heat treatment tim and reaction products formed by interfacial reaction are mainly composed of $Al_3Ni$ and $Al_3Ni_2$ phases. The tensile strength of Ni/AC4C and Ni-Cr/AC4C composite is lower than the matrix metal and this can be explained by the brittle intermetallic compounds formed at the interface of Ni and Ni-Cr reinforcements. But the properies of hardness, wear resistance and thermal expansion are better than the matrix due to the strengthening effect of Ni-Cr porous metals.

• Journal of the Korean Ceramic Society
• /
• v.31 no.8
• /
• pp.869-873
• /
• 1994

Electrical properties of each interfacial layers on semiconducting ceramics have been analized and evaluated by complex impedance resonance method as functions of ambient temperatures and applied voltages. From the analytical results, it can be observed that the interfacial layers in a semiconducting ceramics vary individually with the ambient temperature and then this influence the total properties. Also, it has been confirmed that the applied voltage on semiconducting ceramics affect mainly the electrode interface, and thus the resistance and capacitance decrease due to the variation of potential barrier layers.

• Journal of the Microelectronics and Packaging Society
• /
• v.18 no.4
• /
• pp.11-18
• /
• 2011

The quantitative interfacial adhesion energy of the Cu-Cu direct bonding layers was evaluated in terms of the bonding temperature and Ar+$H_2$ plasma treatment on Cu surface by using a 4-point bending test. The interfacial adhesion energy and bonding quality depend on increased bonding temperature and post-annealing temperature. With increasing bonding temperature from $250^{\circ}C$ to $350^{\circ}C$, the interfacial adhesion energy increase from $1.38{\pm}1.06$ $J/m^2$ to $10.36{\pm}1.01$ $J/m^2$. The Ar+$H_2$ plasma treatment on Cu surface drastically increase the interfacial adhesion energy form $1.38{\pm}1.06$ $J/m^2$ to $6.59{\pm}0.03$ $J/m^2$. The plasma pre-treatment successfully reduces processing temperature of Cu to Cu direct bonding.