• International Journal of Air-Conditioning and Refrigeration
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• v.14 no.2
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• pp.41-48
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• 2006

Absorption performance at the vertical interface between refrigerant vapor and liquid solution of $LiBr-H_{2}O$ solution was enhanced by the waves formed due to the interfacial shear stress. The present study investigated experimentally and analytically the improvements of absorption performance in a falling film by wavy film flow. The dynamic parameter was the film Reynolds numbers ranged from 50 to 150. The energy and diffusion equations were solved simultaneously to find the temperature and concentration profiles at the interface of liquid solution and refrigerant vapor. Absorption characteristics due to heat and mass transfer were analyzed for the falling film of the LiBr aqueous solution contacted by refrigerant vapor in the absorber. Absorption performance showed a peak value at the solution flow rate of $Re_{f}>100$. Absorption performance for the wavy film flow was found to be greater by approximately 10% than that for uniform film flow. Based on numerical and experimental results, the maximum absorption rate was obtained for the wavy flow caused by spring insert. The difference between the measured and the predicted results were ranged from 5.8 to 12%.

• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.195-200
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• 1989

The Silica-Carbon mixture was made with addition of carbon black in the composition which monodispersed spherical fine silica was formed by the hydrolysis of ethylsilicate, mole ratio of Carbon/Alkoxide was 3.1 and $\beta$-SiC powder was synthesized by reacting this mixture at 1,350~1,50$0^{\circ}C$ in Ar atmosphere. The results of this study are as follow : (1) The purity of synthesized $\beta$-SiC powder was above 99.98% and it was in cubic modification with lattice constant of 4.3476$\AA$. (2) The rate-controlling steps varied with the reaction temperature for the syntehsis of $\beta$-SiC in this study ; nucleation and growth of $\beta$-SiC at 1,350~1,40$0^{\circ}C$, interfacial reaction at 1,45$0^{\circ}C$ and diffusion described by Jander Equation at 1,50$0^{\circ}C$. (3) When the rate-determining step was nucleation and growth, the activation energy was about 87.8kcal/mol.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.263-267
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• 2007

Hafnium oxide $(HfO_2)$ films were deposited on Si(100) substrates by remote plasma-enhanced atomic layer deposition (PEALD) method at $250^{\circ}C$ using TEMAH [tetrakis(ethylmethylamino)hafnium] and $O_2$ plasma. $(HfO_2)$ films showed a relatively low carbon contamination of about 3 at %. As-deposited and annealed $(HfO_2)$ films showed amorphous and randomly oriented polycrystalline structure. respectively. The interfacial layer of $(HfO_2)$ films deposited using remote PEALD was Hf silicate and its thickness increased with increasing annealing temperature. The hysteresis of $(HfO_2)$ films became lower and the flat band voltages shifted towards the positive direction after annealing. Post-annealing process significantly changed the physical, chemical, and electrical properties of $(HfO_2)$ films. $(HfO_2)$ films deposited by remote PEALD using TEMAH and $O_2$ plasma showed generally improved film qualities compare to those of the films deposited by conventional ALD.

• Elastomers and Composites
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• v.18 no.2
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• pp.51-59
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• 1983

The dielectric properties of polymers are very important when investigating the molecular structure of polymers. The characteristics of the dielectric absorption in vulcanized natural rubber were studied in frequency ranging from 10[KHz] to 32[MHz] at the temperature of 25[$^{\circ}C$]. As a result of the study, it has been confirmed that natural rubber vulcanized below 4phr leads to two kinds of dielectric losses due to the interfacial polarization and the dipole polarization by sulfur, and of above 7[%] was only a loss due to the dipole polarization by sulfur. Futhermore, the dielectric loss maximum $tan{\delta}$ spectrum, removed to the low frequency in accordance with increasing sulfur, depends greatly on sulfur. The volume resistivity of $10^{7}{\sim}10^{11}[{\Omega}{\cdot}cm}]$, regardless of whether the crosslinking of rubber is weakened by sulfur, was observed.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.637-641
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• 2012

Due to its high production cost and relatively high energy consumption during the Siemens process, poly-silicon makers have been continuously and eagerly sought another silicon route for decades. One candidate that consumes less energy and has a simpler acidic and metallurgical purification procedure is upgraded metallurgical-grade (UMG) silicon. Owing to its low purity, UMG silicon often requires special steps to minimize the impurity effects and to remove or segregate the metal atoms in the bulk and to remove interfacial defects such as precipitates and grain boundaries. A process often called the 'gettering process' is used with phosphorus diffusion in this experiment in an effort to improve the performance of silicon solar cells using UMG silicon. The phosphorous gettering processes were optimized and compared to the standard POCl process so as to increase the minority carrier lifetime(MCLT) with the duration time and temperature as variables. In order to analyze the metal impurity concentration and distribution, secondary ion mass spectroscopy (SIMS) was utilized before and after the phosphorous gettering process.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3279-3281
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• 1999

This paper describes a method of direct wafer bonding using surfaces activated by a radio-frequency hydrogen plasma. The hydrogen plasma cleaning of silicon in the RIE mode was investigated as a pretreatment for silicon direct bonding. The cleaned silicon surface was successfully terminated by hydrogen, The hydrogen-terminated surfaces were rendered hydrophilic, which could be wetted by Dl water rinse. Two wafers of silicon and silicon dioxide were contacted to each other at room temperature and postannealed at $300{\sim}1100^{\circ}C$ in an $N_2$ atmosphere for 2 h. From the AFM results, it was revealed that the surface became rougher with the increased plasma exposure time and power. The effect of the plasma treatment on the surface chemistry was investigated by the AES analysis. It was shown that the carbon contamination at the surface could be reduced below 5 at %. The interfacial energy measured by the crack propagation method was 122 $mJ/m^2$ and 384 $mJ/m^2$ for RCA cleaning and hydrogen plasm, respectively.

• Journal of the Korean Society of Combustion
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• v.18 no.2
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• pp.17-22
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• 2013

In this study, we tested the absorption of $CO_2$ in combustion gas into an alkaline wastewater to simultaneously control $CO_2$ and wastewater. During the experiment, we investigated the effects of operating parameters on neutralization characteristics of the wastewater by using $CO_2$ in a bench-scale semi-batch jet loop reactor (0.1 m diameter and 1.0 m in height). The operating parameters investigated in the study are gas flow rate of 1.0-2.0 L/min, liquid recirculation flow rate of 4-32 L/min, and liquid temperature of $20-25^{\circ}C$. It was shown that the initial pH of wastewater rapidly decreased with increased gas flow rate for a given liquid recirculation flow rate. This was due to the increase in the gas holdup and the interfacial area at higher gas flow rate in the reactor. At constant gas flow rate, the time required to neutralize the wastewater initial pH of 10.1 decreased with liquid recirculation flow rate ($Q_L$), reached a minimum value in the range of $Q_L$ = 16-24 L/min, and then increased with further increase in $Q_L$. Further, the time required to neutralize the wastewater was shortened at higher temperatures.

• Journal of the Korean Society of Combustion
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• v.18 no.3
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• pp.38-43
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• 2013

In this study, we tested the absorption of $CO_2$ in combustion gas into an alkaline wastewater to simultaneously control $CO_2$ and wastewater. During the experiment, we investigated the effects of operating parameters on neutralization characteristics of the wastewater by using $CO_2$ in a bench-scale semi-batch jet loop reactor (0.1 m diameter and 1.0 m in height). The operating parameters investigated in the study are gas flow rate of 1.0-2.0 L/min, liquid recirculation flow rate of 4-32 L/min, and liquid temperature of $20-25^{\circ}C$. It was shown that the initial pH of wastewater rapidly decreased with increased gas flow rate for a given liquid recirculation flow rate. This was due to the increase in the gas holdup and the interfacial area at higher gas flow rate in the reactor. At constant gas flow rate, the time required to neutralize the wastewater initial pH of 10.1 decreased with liquid recirculation flow rate ($Q_L$), reached a minimum value in the range of $Q_L$ = 16-24 L/min, and then increased with further increase in $Q_L$. Further, the time required to neutralize the wastewater was shortened at higher temperatures.

• Journal of Surface Science and Engineering
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• v.49 no.3
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• pp.252-259
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• 2016

In order to form an aluminum-doped zinc oxide (AZO) transparent electrode film on a polyethylene terephthalate (PET) substrate used for a flexible display substrate, the AZO transparent electrode was produced at low temperature without substrate heating. Even though the produced electrode showed characteristic optical transmittance of 90 % (at 550 nm) and sheet resistance within $100{\Omega}/sq$, cracks occurred 10 minutes after loading applied 2 mm radius of curvature, and the sheet resistance increased linearly. An insertion layer of ZrCu was formed between the AZO film and the PET substrate to suppress the generation of cracks on the AZO film. It was verified that the crack was not generated 30 minutes after the loading of 2 mm radius of curvature, and no increase in sheet resistance was recorded. There was also not cracks in the dynamic bending test of 4 mm radius, but surface resistance was slightly increased. As a result, the ZrCu insertion film improved the interfacial adhesion between the substrate and AZO film layer without increasing sheet resistance and decreasing transmittance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.352-353
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• 2007

The spectrum for $0_{\circ}$, $90_{\circ}$-polarized light coincides with the spectrum for non-polarized light and also with the spectrum was observed in the LB film deposited using a fresh solution. And, the formation and dissociation of J-aggregates, anisotropic behavior was no longer observed in the heat treated merocyanine dyes LB films. But, in the optical absorption spectra of same LB films by UV irradiation at room temperature, their were observed only dissociation of J-aggregates, that is decrease of absorbance peak without change spectral shape. On the other hand, in the case of optical absorption spectra of the LB films by the heat treatment at $70^{\circ}C$ in the air, both of the shifted absorption bands decay and a monomer absorption peak of about 530 nm appears instead.