• Applied Microscopy
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• v.45 no.2
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• pp.89-94
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• 2015

This article briefly reviews the results of recently reported research on high-temperature Pb-free solder alloys and the research trend for characterization of the interfacial reaction layer. To improve the product reliability of high-temperature Pb-free solder alloys, thorough research is necessary not only to enhance the alloy properties but also to characterize and understand the interfacial reaction occurring during and after the bonding process. Transmission electron microscopy analysis is expected to play an important role in the development of high-temperature solders by providing accurate and reliable data with a high spatial resolution and facilitating understanding of the interfacial reaction at the solder joint.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.873-877
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• 2007

In order to apply a complex multilayer chip LC filter, this study has estimated the interfacial reaction and coupling properties of dielectric materials $Pb(Fe_{1/2}Nb_{1/2})O_3$ and Ni-Zn-Cu ferrite materials through low-temperature co-sintering (LTCS). PFN powders were fabricated using double calcinated at $700^{\circ}C$ and then $850^{\circ}C$. While the perovskite phase rate was found to be 91 %, after heat treatment at $900^{\circ}C$ for 6h, the perovskite phase rate and density exhibited a value of 100 % and 7.46$g/cm^3$, respectively. The PFN/Ni-Zn-Cu ferrite, PFN/CUO (or $Pb_2Fe_2O_5$) and ferrite/CuO (or $Pb_2Fe_2O_5$) were mechanically coupled through interfacial reactions after the specimen was co-sintered at $900^{\circ}C$ for 6 h. No intermediate layer exists for the mutual coupling reaction. This result indicates the possibility of low-temperature co-sintering without any interfacial reaction layer for a multilayer chip LC filter.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2005.11a
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• pp.141-144
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• 2005

Sensing and interfacial evaluation of Ni nanowire strands/polymer composites were investigated using Electro-micromechanical technique. Electro-micromechanical techniques can be used as sensing method for micro damage, loading, temperature of interfacial properties. Using Ni nanowire strands/silicone composites with different content, load sensing response of electrical contact resistivity was investigated under tensile and compression condition. The mechanical properties of Ni nanowire strands with different type/epoxy composites were measured using uniformed cyclic loading and tensile test. Ni nanowire strands/epoxy composites showed humidity and temperature sensing within limited ranges, 20 vol% reinforcement. Some new information on temperature and humidity sensing plus loading sensing of Ni nanowire strands/polymer composites could be obtained from the electrical resistance measurement as a new concept of the nondestructive interfacial evaluation.

• Journal of the Korea institute for structural maintenance and inspection
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• v.12 no.6
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• pp.109-118
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• 2008

Carbon fiber reinforced polymer(CFRP) can be bonded to the soffit of a concrete beam as a means of repairing and strengthening the beam. In such beams, materials, concrete and carbon fiber sheets, are different in coefficient of thermal expansion. Consequently, interfacial shear stresses can be increased and debonding failure may occur at the plate ends due to temperature rising. This paper presents a method of approximate closed-form solutions for the interfacial shear stresses and conducts a beam test to compare the numerical results. In case of temperature rising over $30^{\circ}C$, interfacial stress of 0.91MPa is occurred at the end of sheet. Therefore, using carbon fiber sheet for strengthening the concrete beam, it is necessary to consider the thermal effects and to evaluate the long time behavior of the concrete beam by temperature change.

• Korea-Australia Rheology Journal
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• v.18 no.1
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• pp.1-8
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• 2006

Blend of bisphenol-A polycarbonate (PC) and (acrylonitrile-styrene-acrylic rubber) terpolymer (ASA) having excellent balance in the interfacial properties and mechanical strength was developed for the automobile applications. Since interfacial adhesion between PC and styrne-acrylonitrile copolymer (SAN) matrix of ASA is not strong enough, two different types of compatibilizers, i.e, diblock copolymer composed of tetramethyl polycarbonate (TMPC) and SAN (TMPC-b-SAN) and poly(methyl methacrylate) (PMMA) were examined to improve interfacial adhesion between PC and SAN. TMPC-b-SAN was more effective than PMMA in increasing interfacial adhesion between PC and SAN matrix of ASA (or weld-line strength of PC/ASA blend). When blend composition was fixed, PC/ASA blends exhibited similar mechanical properties except impact strength and weld-line strength. Impact strength of PCI ASA blend at low temperature was influenced by rubber particle size and its morphology. PC/ASA blends containing commercially available PMMA as compatibilizer also exhibited excellent balance in mechanical properties and interfacial adhesion.

• Journal of Adhesion and Interface
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• v.10 no.4
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• pp.162-168
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• 2009

As a preliminary study of optimum composite properties under cryogenic temperature, the comparison of interfacial properties of carbon or glass fibers reinforced epoxy composites was evaluated at ambient and intermediate low temperature, i.e., 25 and $-10^{\circ}C$ by using micromechanical techniques. Under tensile and compressive loading conditions, their mechanical modulus at low temperature was higher than that atambient temperature. Interfacial shear strength (IFSS) at ambient and low temperatures was compared to each other, depending on epoxy matrix toughness and apparent modulus at the interface. The IFSS was much higher at low temperature than that at room temperature because of the increased epoxy matrix modulus. Statistical distributions of tensile strengths of glass and carbon fibers were evaluated for different temperature ranges, which is dependent upon fiber's inherent flaws and rigidity.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.11a
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• pp.11-11
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• 2004

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.319-325
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• 2010

3-D IC integration enables the smallest form factor and highest performance due to the shortest and most plentiful interconnects between chips. Direct metal bonding has several advantages over the solder-based bonding, including lower electrical resistivity, better electromigration resistance and more reduced interconnect RC delay, while high process temperature is one of the major bottlenecks of metal direct bonding because it can negatively influence device reliability and manufacturing yield. We performed quantitative analyses of the interfacial properties of Al-Al bonds with varying process parameters, bonding temperature, bonding time, and bonding environment. A 4-point bending method was used to measure the interfacial adhesion energy. The quantitative interfacial adhesion energy measured by a 4-point bending test shows 1.33, 2.25, and $6.44\;J/m^2$ for 400, 450, and $500^{\circ}C$, respectively, in a $N_2$ atmosphere. Increasing the bonding time from 1 to 4 hrs enhanced the interfacial fracture toughness while the effects of forming gas were negligible, which were correlated to the bonding interface analysis results. XPS depth analysis results on the delaminated interfaces showed that the relative area fraction of aluminum oxide to the pure aluminum phase near the bonding surfaces match well the variations of interfacial adhesion energies with bonding process conditions.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.6
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• pp.1187-1193
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• 2002

Anodic bonding process has been quantitatively evaluated based on the Taguchi analysis of the interfacial fracture toughness, measured at the interface of anodically bonded silicon-glass bimorphs. A new test specimen with a pre-inserted blade has been devised for interfacial fracture toughness measurement. A set of 81 different anodic bonding conditions has been generated based on the three different conditions for four different process parameters of bonding load, bonding temperature, anodic voltage and voltage supply time. Taguchi method has been used to reduce the number of experiments required for the bonding strength evaluation, thus obtaining nine independent cases out of the 81 possible combinations. The interfacial fracture toughness has been measured for the nine cases in the range of 0.03∼6.12 J/㎡. Among the four process parameters, the bonding temperature causes the most dominant influence to the bonding strength with the influence factor of 67.7%. The influence factors of other process parameters, such as anodic voltage and voltage supply time, bonding load, are evaluated as 18%, 12% and 2.3%, respectively. The maximum bonding strength of 7.23 J/㎡ has been achieved at the bonding temperature of 460$\^{C}$ with the bonding load of 45gf/㎠, the applied voltage of 600v and the voltage supply time of 25minites.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.402-409
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• 2013

The objective of this study was to develop a synthesis process for ${\beta}$-SiC powders to reduce the synthesis temperature and to control the particle size and to prevent particle agglomeration of the synthesized ${\beta}$-SiC powders. A phenol resin and TEOS were used as the starting materials for the carbon and Si sources, respectively. $SiO_2$-C hybrid precursors with various C/Si mole ratios were fabricated using a conventional sol-gel process. ${\beta}$-SiC powders were synthesized by a carbothermal reduction process using $SiO_2$-C hybrid precursors with various C/Si mole ratios (1.6 ~ 2.5) fabricated using a sol-gel process. In this study, the effects of excess carbon and the addition of Si powders to the $SiO_2$-C hybrid precursor on the synthesis temperature and particle size of ${\beta}$-SiC were examined. It was found that the addition of metallic Si powders to the $SiO_2$/C hybrid precursor with excess carbon reduced the synthesis temperature of the ${\beta}$-SiC powders to as low as $1300^{\circ}C$. The synthesis temperature for ${\beta}$-SiC appeared to be reduced with an increase of the C/Si mole ratio in the $SiO_2$-C hybrid precursor by a direct carburization reaction between Si and excess carbon.