• Title/Summary/Keyword: Interfacial microstructure

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A Study on Microstructure and Mechanical Properties of TiB2-steel Composite Fabricated by Gas Pressure Infiltration Process (가스압 함침 공정으로 제조된 TiB2-steel 금속복합재료의 미세조직 및 기계적 물성에 관한 연구)

  • Lee, Jihye;Lee, Donghyun;Cho, Seungchan;Kwon, Hansang;Lee, Sang-Kwan;Lee, Sang-Bok;Kim, Junghwan
    • Composites Research
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    • v.35 no.4
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    • pp.248-254
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    • 2022
  • In this study, TiB2-steel composite with high-fractional TiB2 reinforcement was fabricated by gas pressure infiltration process and the microstructure analysis and compressive strength and hardness were evaluated. To elucidate the correlation between microstructure and mechanical properties for fabricated composite, after the compression test of TiB2-steel composite, the fracture surface was analyzed and the fracture behavior on compression test was predicted. As a result of the compression fracture surface analysis, interfacial failure trace between the steel matrix and the reinforcement was observed, and the interface between the steel matrix and the reinforcement was analyzed using TEM. From the result of microstructure analysis on the fabricated composite, it was confirmed that, in addition to TiB2 reinforcement and steel matrix, TiC phase and coarse (Fe,M)2B (M=Cr,Mn) phase were formed. Throughout the thermodynamic calculation, it was confirmed that TiC and (Fe,M)2B can be formed as a stable phase under the process condition. The fabricated TiB2-steel composite had a significantly increased hardness, and the compressive strength and Young's modulus were improved by 3.07 times and 1.95 times, respectively, compared to steel matrix. It seems that the coarse (Fe,M)2B (M=Cr,Mn) phase formed throughout the composite causes the deterioration of mechanical properties, and by controlling the formation of the (Fe,M)2B (M=Cr,Mn) phase, it is judged that the mechanical properties of the TiB2-steel composite can be further improved.

Research of Diffusion Bonding of Tungsten/Copper and Their Properties under High Heat Flux

  • Li, Jun;Yang, Jianfeng
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.14-14
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    • 2011
  • W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.

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A Study on the joining of $Al_2$$O_3$ to STS304 with using Cu-Ti Insert metal (Cu-Ti삽입금속을 이용한 $Al_2$$O_3$-STS304접합체 계면조직에 관한 연구)

  • Kim, Byeong-Mu;Sin, Sun-Beom;Gang, Jeong-Yun;Lee, Sang-Rae
    • Korean Journal of Materials Research
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    • v.3 no.1
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    • pp.33-42
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    • 1993
  • Abstract The increasing application of $Al_2$,$O_3$ and related ceramics as engineering materials is because of their attractive properties of fine ceramics. One solution to the wide variety of ceramic to metal combination lies in the effective joining. Active metal brazing of $Al_2$,$O_3$, to STS304 was investigated using Cu -Ti alloys. Titanium additive is chosen since it is good oxide former~. Brazing is performed under vacuum($10^{-3}$-$10^{-4}$ torr), a temperature between 1100 and 120$0^{\circ}C$ and time of 0.5-1.5hr. The microstructure of the brazed joints of $Al_2$,$O_3$ to STS304 with Cu-Ti insert metals were examined by using optical microscope and SEM and reaction products were analyzed by using EDX, WDX and XRD. Also interfacial reactions occuring during the brazing of $Al_2$,$O_3$/Cu-Ti/STS304 system are discussed. Experimental results showed formation of Titanium oxide T$i_2$$O_3$ which is attributable to the joining $Al_2$,$O_3$ to STS304 with Cu-Ti insert metal.

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Microstructure and EDM Processing of $MoSi_2$ Intermetallic Composite ($MoSi_2$ 금속간화합물 복합재료의 미세구조와 방전가공특성)

  • Yoon, Han-Ki;Lee, Sang-Pill;Yoon, Kyong-Wok;Kim, Dong-Hyun
    • Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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    • 2002.05a
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    • pp.23-28
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    • 2002
  • This paper describes the machining characteristics of the $MoSi_2$ based composites by electric discharge drilling with various tubular electrodes, besides, Hardness characteristics and microstructures of $Nb/MoSi_2$ laminate composites were evaluated from the variation of fabricating conditions such as preparation temperature, applied pressure and pressure holding time. $MoSi_2$ -based composites has been developed in new materials for jet engine of supersonic-speed airplanes and gas turbine for high- temperature generator. Achieving this objective may require new hard materials with high strength and high temperature-resistance. However, With the exception of grinding, traditional machining methods are not applicable to these new materials. Electric discharge machining (EDM) is a thermal process that utilizes a spark discharge to melt a conductive material, the tool electrode being almost non-unloaded, because there is no direct contact between the tool electrode and the workpiece. By combining a nonconducting ceramics with more conducting ceramic it was possible to raise the electrical conductivity. From experimental results, it was found that the lamination from Nb sheet and $MoSi_2$ powder was an excellent strategy to improve hardness characteristics of monolithic $MoSi_2$. However, interfacial reaction products like (Nb, Mo)$SiO_2$ and $Nb_2Si_3$ formed at the interface of $Nb/MoSi_2$ and increased with fabricating temperature. $MoSi_2$ composites which a hole drilling was not possible by the conventional machining process, enhanced the capacity of ED-drilling by adding $NbSi_2$ relative to that of SiC or $ZrO_2$ reinforcements.

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Interfacial Pullout Characteristics of Recycled PET Fiber With Hydrophilic Chemical Treatments in Cement Based Composites (화학적 친수성 처리율에 따른 재생 PET 섬유와 시멘트 복합재료와의 계면 인발 특성)

  • Won, Jong-Pil;Park, Chan-Gi;Kim, Yoon-Jeong;Park, Kyung-Hoon
    • Journal of the Korea Concrete Institute
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    • v.19 no.3
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    • pp.333-339
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    • 2007
  • The purpose of this study was to enhance bond performance between recycled PET (polyethylene telephthalat) fiber and cement composites through hydrophilic treatment using maleic anhydride grafted polypropylene(mPP). The mPP with various concentration of 0%, 5%, 10%, 15% and 20% to determine effect on bond behavior of recycled PET fiber were applied as experimental variables. Dog bone shaped specimens according to JCI SF-8 was applied to evaluate the bond strength and pullout energy. The results showed increased bond strength and pullout energy as concentration of mPP. Concentration of 15% mPP showed the most effective results while 20% showed reduced performance results. Because 15% mPP ensures perfect coating while 20% makes thick coating area that resulted in crack propagation and consequent separation of PET fiber and coated area during pullout load occurred. Enhancement mechanism of bond performance of recycled PET fiber and cement composites with each concentration of mPP could be conformed through investigation of microstructure of fiber surface.

Sn-Ag-Cu Solder Joint Properties on Plasma Coated Organic Surface Finishes and OSP (플라즈마 유기막과 OSP PCB 표면처리의 Sn-Ag-Cu 솔더 접합 특성 비교)

  • Lee, Tae-Young;Kim, Kyoung-Ho;Bang, Jung-Hwan;Park, Nam-Sun;Kim, Mok-Soon;Yoo, Sehoon
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.3
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    • pp.25-29
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    • 2014
  • Plasma organic thin film for PCB surface finish is a potential replacement of the conventional PCB finishes because of environment-friendly process, high corrosion-resistance and long shelf life over 1 year. In this study, solder joint properties of the plasma organic surface finish were estimated and compared with OSP surface finish. The plasma surface finish was deposited by chemical vapor deposition from fluorine-based precursors. The thickness of the plasma organic coating was 20 nm. Sn-3.0Ag-0.5Cu (SAC305) solder was used as solder joint materials. From a salt spray test, the plasma organic coating had higher corrosion resistance than the OSP surface finish. The spreadability of SAC305 on plasma organic coating was higher than that on OSP surface finish. SEM and TEM micrographs showed that the interfacial microstructure of the plasma surface finish sample were similar to that of the OSP sample. Solder joint strength of the plasma finish sample was also similar to that of the OSP finished sample.

Joining properties and thermal cycling reliability of the Si die-attached joint with Zn-Sn-based high-temperature lead-free solders (Zn-Sn계 고온용 무연솔더를 이용한 Si다이접합부의 접합특성 및 열피로특성)

  • Kim, Seong-Jun;Kim, Keun-Soo;Suganuma, Katsuaki
    • Proceedings of the KWS Conference
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    • 2009.11a
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    • pp.72-72
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    • 2009
  • 전자부품의 내부접속 및 파워반도체의 다이본딩과 같은 1차실장에는 고온환경에서의 사용과 2차실장에서의 재용융방지를 위해 높은 액상선온도 및 고상선온도를 필요로 하여, Pb-5wt%Sn, Pb-2.5wt%Ag로 대표되는 납성분 85%이상의 고온솔더가 널리 사용되고 있다. 생태계와 인체에 대한 납의 유해성이 보고된 이래, 무연솔더에 대한 연구가 활발히 진행되어 왔으나, Sn-Ag-Cu계로 대표되는 Sn계 합금으로 대체 중인 중온용 솔더와는 달리, 고온용 솔더에 대해서는 대체합금에 대한 연구가 미흡한 실정이다. 대체재의 부재로 인해 기존의 납을 다량함유한 솔더로 1차실장이 지속됨으로서, 2차실장의 무연화에도 불구하고 전자부품 및 기기의 재활용에 큰 어려움을 겪고 있다. 지금까지 고온용 무연솔더로서는 융점에 근거해 Au-(Sn, Ge, Si)계, Bi-Ag계, Zn-(Al, Sn)계의 극히 제한된 합금계만이 보고되어 왔다. Au계 솔더는 현재 플럭스를 사용하지 않는 광학, 디스플레이 분야 등 고부가가치 공정에 사용되고 있으나, 합금가격이 매우 비싸며 가공성이 나빠 대체재료로서는 적합하지 않다. Bi-Ag계 솔더 또한 취성합금으로 와이어 및 박판으로 가공하는데 어려움이 크며, 솔더로서 중요한 특성중 하나인 전기전도도 및 열전도도가 나쁜 편이다. 이에 비해, Zn계 합금은 비교적 낮은 합금가격, 적절한 가공성과 뛰어난 인장강도, 우수한 전기전도도 및 열전도도를 지녀, 고온용솔더 대체재료의 유력한 후보로 생각된다.이전 연구에서, 필자의 연구그룹은 Zn-Sn계 합금을 고온용 무연솔더로서 제안한 바 있다. Zn-Sn계 합금은 충분히 높은 융점과 함께, 금속간화합물이 없는 미세조직, 우수한 기계적 특성, 높은 전기전도도 및 열전도도 등의 장점을 나타내었다. 본 연구에서는 기초합금특성상 고온솔더로서 다양한 장점을 지닌 Zn-30wt%Sn합금을 고온용 솔더의 대표적인 적용의 하나인 다이본딩에 적용하여, 접합부의 강도 및 미세조직, 열피로 신뢰성에 대해 분석을 함으로서 실제 공정에의 적용가능성에 대해 검토하였다. Zn-30wt%Sn을 이용해 Au/TiN(Titanium nitride) 코팅한 Si다이를 AlN-DBC(aluminum nitride-direct bonded copper)기판에 접합한 결과, 양측에 완전히 젖은 기공이 없는 양호한 다이접합부를 얻었으며, 솔더내부에는 금속간화합물을 형성하지 않았다. Si다이와의 계면에는 TiN만이 존재하였으며, Cu와의 계면에는 Cu로부터 $Cu_5Zn_8,\;CuZn_5$의 반응층을 형성하였다. 온도사이클시험을 통한 열피로특성평가에서, Zn-30wt%Sn를 이용한 다이접합부는 1500사이클 지점에서 Cu와 Cu-Zn금속간화합물의 사이에서 피로균열이 형성되며, 접합강도가 크게 감소하였다. 열피로특성 향상을 위해 Cu표면에 TiN코팅을 하여 Zn-30wt%Sn 솔더로 다이접합한 결과, Si다이와 기판 양측에 TiN만으로 구성된 계면을 형성하였으며, TEM관찰을 통해 Zn-30wt%Sn과 극히 미세한 접합계면이 형성하고 있음을 확인하였다. Zn-wt%30Sn솔더와 TiN층의 병용으로 2000사이클까지 미세조직의 변화 및 강도저하가 없는 극히 안정된 고신뢰성의 다이접합부를 얻을 수가 있었다.

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Recent Research Trends of Mixed Matrix Membranes for CO2 Separation (이산화탄소 분리용 혼합 매질 분리막 최신 연구 동향)

  • Chi, Won Seok;Lee, Jae Hun;Park, Min Su;Kim, Jong Hak
    • Membrane Journal
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    • v.25 no.5
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    • pp.373-384
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    • 2015
  • In the past few decades, polymeric membrane has played an important role in gas separation applications. For the separation of $CO_2$, one of greenhouse gases, high permselectivity, long-term stability and scale-up are needed. However, conventional polymeric membranes have shown a trade-off relation between permeability and selectivity while inorganic materials are highly permeable but expensive. Mixed matrix membranes (MMMs) combining the advantages of both polymeric and inorganic materials have become a possible breakthrough for the next-generation gas separation membranes. The MMMs could be either symmetric or asymmetric but the latter is more preferred to improve the permeance. Important factors influencing the MMM fabrication include homogeneous distribution of inorganic particles and good interfacial contact between inorganic filler and organic matrix. Recently, metal organic frameworks (MOFs) have received much attention as a new class of porous crystalline materials and a potential candidate for $CO_2$ separation. Zeolitic imidazolate frameworks (ZIFs), a sub-branch of MOFs, are the most widely used in MMMs due to small particle size and appropriate pore size for $CO_2$ separation. One of the major issues associated with the incorporation of porous particles in a polymeric membrane is to control the microstructure of the porous particle materials such as particle size, orientation, and boundary conditions etc. In this review, major challenges surrounding MMMs and the strategies to tackle these challenges are given in detail.

A Study on Improved Open-Circuit Voltage Characteristics Through Bi-Layer Structure in Heterojunction Solar Cells (이종접합 태양전지에서의 Bi-Layer 구조를 통한 향상된 개방전압특성에 대한 고찰)

  • Kim, Hongrae;Jeong, Sungjin;Cho, Jaewoong;Kim, Sungheon;Han, Seungyong;Dhungel, Suresh Kumar;Yi, Junsin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.6
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    • pp.603-609
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    • 2022
  • Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I1) and the next one a-SiOx:H(I2) were used, where a-SiOx:H(I2) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I1). Using a-SiOx:H as I2 layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiOx:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiOx:H microstructure can help the carrier transportation through tunneling and thermal emission.

A bilayer diffusion barrier of atomic layer deposited (ALD)-Ru/ALD-TaCN for direct plating of Cu

  • Kim, Soo-Hyun;Yim, Sung-Soo;Lee, Do-Joong;Kim, Ki-Su;Kim, Hyun-Mi;Kim, Ki-Bum;Sohn, Hyun-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.239-240
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    • 2008
  • As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

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