• Vacuum Magazine
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• v.2 no.2
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• pp.4-11
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• 2015

During last two decades, remarkable progresses have been made in organic electronic devices, such as organic light-emitting device, organic photovoltaic and many other applied devices. Many of these progress are attributed to the multilayered/heterojunction device architectures, which could be achieved from the control of "interfacial energetics". In that sense, the interfacial electronic structures in organic electronic devices have a decisive role in device performance. However, the prediction of the interfacial electronic structures from each separate material is not trivial. Many complex phenomena occur at the interface and these can be only understood from thorough measurements on interfacial electronic structures in situ. Photoemission and inverse photoemission spectroscopy have been known as the most proper measurement tools to analyze these interfacial electronic structures. In this review, the basic principles of (inverse) photoemission spectroscopy and typical measurement results on organic/inorganic interfaces are introduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.973-976
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• 2004

The results of numerous studies in III-V semiconductors show that sulfur treatment improves the electrical parameters of III-V compound devices. In this article, we examine the effects of sulfidation of HgCdTe surface on the interfacial characteristics of metal-ZnS-HgCdTe structures. Different from sulfidation in III-V material, S can not be act as an impurity because II-S compounds (ZnS, CdS) generally used as passivant for HgCdTe. Our studies of sulfur-treatment on HgCdTe surface show that sulfur agent forms the S- S, II-S bonds at the surface layer. These bonds are very effective to improve the electrical properties of ZnS layer on HgCdTe by reducing the possibility of native oxides formation. After the sulfidation process, MIS capacitors of HgCdTe show great improvement in electrical properties, such as low density of fixed charge and reduced hystereisis width.

• Proceedings of the KSME Conference
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• 2000.11a
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• pp.292-297
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• 2000

In this research, the dynamic photoelastic experimental hybrid method for bimaterial is introduced. Dynamic biaxial loading device is developed, its strain rate is 31.637 s-1 and its maximum impact load is 20 ton. Manufactured methods for model of the dynamic photoelastic experiment for bimaterial are suggested. They are bonding method(bonding material: AW106, PC-1) and molding method. In the bonding method, residual stress is not occurred in the manufactured bimaterial. Crack is propagated along the interface or sometimes deviated from the interface. While in the molding method, residual stress is occurred in the manufactured bimaterial. Crack is always deviated from the interface and propagated in the epoxy region(softer materila). In order to propagate with constant velocity along the interface of bimaterial with arbitrary stiffer material, edge crack should be located along the interface of the acute angle side of the softer material in the bimaterial.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.61-68
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• 2007

Interfacial fracture energy(${\Gamma}$) between $Al_2O_3$ thin film deposited by Atomic Layer Deposition(ALD) and sputter deposited Cu electrode for embedded PCB applications is measured from a $90^{\circ}$ peel test. While the interfacial fracture energy of $Cu/Al_2O_3$ is very poor, Cr adhesion layer increases the interfacial fracture energy to $39.8{\pm}3.2g/mm\;for\;Ar^+$ RF plasma power density of $0.123W/cm^2$, which seems to come from the enhancement of the mechanical interlocking and Cr-O chemical bonding effects.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.3
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• pp.37-42
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• 2022

Recently, the semiconductor package structures are becoming thinner and more complex. As the thickness decrease, interfacial delamination due to material mismatch can be further maximized, so the reliability of interface is a critical issue in industry field. Especially, the polymers, which are widely used in semiconductor packaging, are significantly affected by the temperature and moisture. Therefore, in this study, the delamination prediction at the interface of package structure was performed through finite element analysis considering the moisture absorption and desorption under the various temperature conditions. The material properties such as diffusivity and saturated moisture content were obtained from moisture absorption test. The hygro-swelling coefficients of each material were analyzed through TMA and TGA after the moisture absorption. The micro-shear test was conducted to evaluate the adhesion strength of each interface at various temperatures considering the moisture effect. The finite element analysis of interfacial delamination was performed that considers both deformation due to temperature and moisture absorption. Consequently, the interfacial delamination was successfully predicted in consideration of the in-situ moisture desorption and temperature behavior during the reflow process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.107-110
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• 1995

Space charge formation in epoxy/silica composites has been investigated by the pulsed electroacoustic (PEA) method. The addition of silica resulted in homocharge formation, which attributed to the interfacial trapping of injected charge at epoxy/silica interfaces, Homocharge accumulation with increase of voltage and silica content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.285-288
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• 1995

In this Study, it worked to get the degradation characteristics of polymer insulating materials using TSC technique. So, it prepared epoxy composities with sample, the TSC spectroscopy was applied to investigate the influence of interfacial deformation due to inorganic filler and treatments of coupling agents on the network structure and the electrical properties of epoxy composites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.230-233
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• 1996

In this paper, We intended to evaluate characteristics of XLPE/EPDM interface which exists in the cable joint. Because the fault was mainly occurred in this interface. We investigated breakdown characteristics of XLPE/EPDM double layered insulator as a funtion of temperature, pressure, annealing time, kinds of jointmaterial. It was shown that breakdown strength of XLPE/EPDM insulators is higher that of XLPE/XLPE or EPDM/EPDM

• Journal of Mechanical Science and Technology
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• v.16 no.2
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• pp.165-174
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• 2002

In the present study, interfacial cracks between an isotropic and orthotropic material, subjected to static far field tensile loading are analyzed using the technique of photoelasticity. The fracture parameters are extracted from the full-field isochromatic data and the same are compared with that obtained using boundary collocation method. Dynamic photoelasticity combined with high-speed digital photography is employed for capturing the isochromatics in the case of propagating interfacial cracks. The normalized stress intensity factors for static cracks are greate. when ${\alpha}$: 90$^{\circ}$(fibers perpendicular to the interface) than when ${\alpha}$=0$^{\circ}$(fibers parallel to the interface), and those when ${\alpha}$=90$^{\circ}$are similar to ones of isotropic material. The dynamic stress intensity factors for interfacial propagating cracks are greater when ${\alpha}$=0$^{\circ}$ than ${\alpha}$=90$^{\circ}$. For the velocity ranges (0.1 < C/C$\sub$s1/<0.7) observed in this study, the complex dynamic stress intensity factor │K$\sub$D/│increases with crack speed c, however, the rate of increase of │K$\sub$D/│with crack speed is not as drastic as that reported for homogeneous materials.

• Journal of Welding and Joining
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• v.29 no.1
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• pp.99-106
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• 2011

Joint strength between a solder ball and a pad on a substrate is one of the major factors which have effects on electronic device reliability. The effort to improve solder joint strength via surface cleaning, heat treatment and solder composition change have been in progress. This paper will discuss the method of solder ball joint strength improvement using LF hydrogen radical cleaning treatment and focus on the effects of surface treatment condition on the solder ball shear strength and interfacial reactions. In the joint without radical cleaning, voids were observed at the interface. However, the specimens cleaned by hydrogen-radical didn't have voids at the interface regardless of cleaning time. The shear strength between the solder ball and the pad was increased over 120%(about 800gf) when compared to that without the radical treatment (680gf) under the same reflow condition. Especially, at the specimen treated for 5minutes, ball shear strength was considerably increased over 150%(1150gf). Through the observation of fracture surface and cross-section microstructure, the increase of joint strength resulted from the change of fracture mode, that is, from the solder ball fracture to IMC/Ni(P) interfacial fracture. The other cases like radical treated specimen for 1, 3, 7, 9min. showed IMC/solder interfacial fracture rather than fracture in the solder ball.