• Title/Summary/Keyword: Interfacial films

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Interfacial reactions in Cu/NbTi multilayer thin films and superconducting wires (임게전류밀도 향상을 위한 Cu/NbTi다층박막과 초전도 선재에서의 계면반응)

  • 심재엽;백홍구;하동우;오상수;류강식
    • Electrical & Electronic Materials
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    • v.8 no.4
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    • pp.478-486
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    • 1995
  • Cu/NbTi multilayer thin films and superconducting wires were fabricated and heat treated with conventional annealing and analyzed by differential scanning calorimetry (DSC) as a basic study for the enhancement of Jc. Interfacial reactions of Cu/NbTi multilayer thin films and superconducting wires were investigated with optical microscope, SEM, and XRD. According to the effective heat of formation (EHF) model, CU$\_$3/Ti was predicted as a first phase. However, considering the crystalline structure and thermodynamics, CuTi was predicted as a first phase. According to the results of DSC and XRD, CU$\_$2/Ti was found to be the first phase, followed by the formation Of CU$\_$4/Ti. The difference in first crystalline phase between the experimental result and the predicted one was discussed. In case of Cu/NbTi superconducting wires, the compounds formed at the Cu/NbTi interface grew with annealing time and the amount of compounds formed in Nb-47wt%Ti alloy was larger than that in Nb-50wt%Ti alloy. It seemed that the incubation time for the formation of compounds in Nb-50wt%Ti alloy was longer than that formed in Nb-47wt%Ti alloy. Also, the diffusion was the rate controlling step for the growth of compounds in all specimens. These compounds were formed at 500-600.deg. C for I hour annealing and, thus, the drawing time below I hour must be required to minimize the growth of compounds for the enhancement of Jc.

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XPS Analysis of PVDF Film Treated by Corona Discharge in Ethyl Methacrylate Vapor Atmosphere (에틸메타크릴레이트 증기 분위기에서 코로나 방전 처리한 PVDF 필름의 XPS 분석)

  • Moon, HuiKwon;Seomoon, Kyu
    • Applied Chemistry for Engineering
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    • v.27 no.6
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    • pp.627-632
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    • 2016
  • Ethyl methacrylate (EMA) monomer coupling onto the polyvinylidene fluoride (PVDF) film surface was attempted to enhance the interfacial adhesive force between PVDF-polyvinyl chloride (PVC) bilayer films via dielectric barrier corona discharge. The interfacial forces were quite enhanced when PVDF films were treated by corona discharge in an EMA 1% atmosphere. The contact angle of PVDF films decreased due to corona treatment. X-ray photoelectron spectroscopy (XPS) analysis showed that the carbon and oxygen content of the PVDF film surface increased with corona discharge while the fluoride content decreased. The curve fitting of XPS $C_{1s}$ peaks revealed that the non-polar C-C bonded carbon and oxygen-bonded carbon increased gradually with corona treatment, while the fluorine-bonded carbon decreased.

Growth of ${\gamma}$-Al2O3 (111) on an ultra-thin interfacial Al2O3 layer/NiAl(110)

  • Lee, M.B.;Frederick, B.G;Richardson, N.V.
    • Journal of Korean Vacuum Science & Technology
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    • v.2 no.2
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    • pp.63-77
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    • 1998
  • The oxidation of NiAl(110) was investigated in the temperature regime between 300K and 1300 K using LEED (low energy electron diffraction), TPD (temperature programmed desorption) and HREELS (high resolution electron energy loss spectroscopy). The adsorption of N2O and O2 up to reconstructions. Stepwise annealing of the oxygen-saturated sample from 600 K to 1300K in UHV (ultra-high vacuum,) results in firstly the onset of randomly oriented then finally fairly well-ordered. 5 ${\AA}$ Al2O3 film with quasi-hexagonal periodicity. Ordered thicker oxide films of 18-30 ${\AA}$ seem to be grown on this interfacial oxide layer by direct oxidation of sample at elevated temperature between 1150 and 1300 K because of the LEED pattern consisting of new broad hexagonal spots and the previous 5 ${\AA}$ spots. Although the periodicity of surface oxygen arrays shows no significant change from an hexagonal close-packing, the O-O distance changes from ∼3.0 ${\AA}$ film to ∼2.9 ${\AA}$ for thicker oxides. with the appearance of Auger parameter, for the 5${\AA}$ film can be described better as an interfacial oxide layer. The observation of three symmetric phonon peaks can be also a supporting evidence for this phase assignment since thicker oxide films on the Same Ni2Al3(110) show somewhat different phonon structure much closer to that of the ${\gamma}$-Al2O3. The adsorption/desorption of methanol further proves the preparation of less-defective and/or oxygen-terminated Al2O3 films showing ordered phase transitions with the change of oxide thickness between 5 ${\AA}$ to 30 ${\AA}$.

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Effects of PZT-Electrode Interface Layers on Capacitor Properties (PZT 박막 캐퍼시터의 특성에 기여하는 PZT-전극계면층의 영향)

  • Kim, Tae-Ho;Gu, Jun-Mo;Min, Hyeong-Seop;Lee, In-Seop;Lee, In-Seop
    • Korean Journal of Materials Research
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    • v.10 no.10
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    • pp.684-690
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    • 2000
  • In order to study effects of interfacial layers between $Pb(Zr,Til)Q_3(PZT)$ films and electrodes for Metal-Ferroelectric-MetaI(MFM) structure capacitors, we have fabricated the capacitors with the Pt/PZT/interfacial-layer/Pt/$TiO_2/SiO_2$/Si structure. $PbTiO_3(PT)$ interfacial layers were formed by sol-gel deposition and PbO, ZrO, and $TiO_2$ thin layers were deposited by reactive sputtering. $TiO_2$ interface layers result in the finest grains of PZT(crystalline Temp. $600^{\circ}C$) films compare to $PbO_2\;and\;ZrO_2$ layers. However, as the thickness of $TiO_2$ layer increases. PZT thin films become rough and electrical characteristics were deteriorated due to remained anatase phase. On the other hand. PT interface layers result in improved morphology of PZT films and do not significantly change ferroelectric properties. It is a also observed that seed layers at the middle and top of PZT films do not give significant effects on grain size but the PT seed layer at the interface between the bottom electrode and the PZT films results in the small grain size.

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Effects of Metal Coating on SiCp on Wettability and Interfacial Strength of Al/SiCp Composites (Al/SiCp 복합재료에서 보강재 표면의 금속 피복층이 젖음성과 계면 강도에 미치는 영향)

  • Lee, Kyung-Ku;Lee, Doh-Jae
    • Journal of Korea Foundry Society
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    • v.15 no.4
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    • pp.360-367
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    • 1995
  • Effects of metal coating treatment on SiC particle on wetting behavior and interfacial strength were studied. Experimental variables are included types of coated metallic films such as Cu and Ni-P, and temperatures of heat-treatment under vacuum. The experimental results concerning wetting phenomena of liquid Al on SiC, showed that coating treatment of metallic film on SiC particles remarkably improves the wetting behavior of liquid Al on SiC, especially in the case of Ni-P coating. The interfacial strength of Al/SiC composites made of coated SiC plate was higher than that of the composite with non-coated SiC plate although the coating treatment was not perfect.

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Condition and New Testing Method of Interfacial Oxide Films in Directly Bonded Silicon Wafer Pairs (직접 접합된 실리콘 기판쌍에 있어서 계면 산화막의 상태와 이의 새로운 평가 방법)

  • ;;;;D.B. Murfett;M.R.Haskard
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.3
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    • pp.134-142
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    • 1995
  • We discovered that each distinct shape of the roof-shaped peaks of (111) facets, which are generated on (110) cross-section of the directly bonded (100) silicon wafer pairs after KOH etching, can be mapped to one of three conditions of the interfacial oxide existing at the bonding interface as follows. That is, thick solid line can be mapped to stabilization, thin solid line to disintegration, and thin broken line to spheroidization. also we confirmed that most of the interfacial oxides of a well-aligned wafer pairs were disintegrated and spheroidized through high-temperature annealing process above 900$^{\circ}$C while the oxide was stabilized persistently when two wafers are bonded rotationally around their common axis perpendicular to the wafer planes.

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Study for ohmic contact of polycrystalline 3C-SiC/TiW (다결정 3C-SiC/TiW Ohmic Contact에 관한 연구)

  • On, Chang-Min;Chung, Gwiy-Sang
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1311-1312
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    • 2006
  • This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using 4he C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}{\cdot}cm^2$ of was obtained due to the improved interfacial adhesion.

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Ohmic contact formation of polycrystalline 3C-SiC for high-temperature MEMS applications (초고온 MEMS용 다결정 3C-SiC의 Ohmic Contact 형성)

  • Ohn, Chang-Min;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.406-407
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    • 2006
  • This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}cm^2$ was obtained due to the improved interfacial adhesion.

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Annealing Effect on Adhesion Between Oxide Film and Metal Film (산화막위에 증착된 금속박막과 산화막과의 계면결합에 영향 미치는 열처리 효과)

  • Kim Eung Soo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.1
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    • pp.15-20
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    • 2004
  • The interfacial layer between the oxide film and the metal film according to RTP annealing temperature of metal film has been studied. Two types of oxides, BPSG and PETEOS, were used as a bottom layer under multi-layered metal films. We observed the interface between oxide and metal films using SEM (scanning electron microscopy), TEM (transmission electron microscopy), AES (auger electron spectroscopy). Bonding failure was occurred by interfacial reaction between the BPSG oxide and the multi-layered metal films above $650^{\circ}C$ RTP anneal. The phosphorus accumulation layer was observed at interface between BPSG oxide and metal films by AES and TEM measurements. On the other hand, bonding was always good in the sample using PETEOS oxide as a bottom layer. We have known that adhesion between BPSG and multi-layered metal films was improved when the sample was annealed below $650^{\circ}C$.

Preparation and Characterization of Low Density Polyethylene (LDPE) and Flower-like Zinc Oxide (FZnO) Composite Films (저밀도폴리에틸렌(LDPE)/꽃 모양 산화아연(FZnO) 복합필름의 제조 및 물성 분석)

  • Kim, Insoo;Lee, Hojun;Kim, Dowan;Seo, Jongchul
    • KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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    • v.22 no.3
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    • pp.85-93
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    • 2016
  • Flower-like zinc oxide (FZnO) was successfully synthesized via a sonochemical process. The chemical structure, morphology, and antimicrobial properties of as- prepared FZnO were investigated. Additionally, pure LDPE and five different LDPE/FZnO composite films were prepared with different FZnO content by using a twin screw extruder. According to the FTIR and SEM analyses, there exists weak interfacial interaction between LDPE and FZnO. Compared with pure LDPE, the LDPE/FZnO composite films showed UV barrier and enhanced antimicrobial activity against Escherichia coli (E. coli) as a Gram-negative micro-organism and Staphylococcus aureus (S. aureus) as a Gram-positive micro-organism. To enhance the interfacial interaction and good dispersion of FZnO into the LDPE matrix, and resultantly to such as UV barrier and antimicrobial properties of LDPE/FZnO composite films as the packaging materials, further efforts are required.