• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.257-261
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• 2014

Multilayered CdTe/PSS films were prepared by the electrostatic self-assembly method in an aqueous medium. Positively-charged cadmium telluride (CdTe) nanoparticles and anionic polyelectrolyte, poly (sodium 4-styrene sulfonate) (PSS) were assembled alternately in order to build up a multilayered film structure. A linear proportion of absorbance to the number of bilayers suggests that an equal amount of CdTe was adsorbed after each dipping cycle, which resulted in the buildup of a homogenous film. The binding energies of elements (Cd and Te) in multilayered CdTe/PSS film shifted from those of the CdTe nanoparticles in the pure state. This result indicates that the interfacial electron densities were redistributed by the strong electrostatic interaction between the oppositely-charged CdTe and PSS. Electrochemical properties of the multilayered CdTe/PSS films were studied in detail by cyclic voltammetry (CV).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.8
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• pp.557-562
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• 1999

Electrical conduction characteristics of XLPE film evaporated with different metal electrode are discussed. The relation between electrical current(I) and Voltage(V) in the M(metal)-I(XLPE)-M(metal) structure are measured in the temperature range from 25$[^{\circ}C]$ to 90[$[^{\circ}C]$ . Several kinds of metals are used as electrode, such as, Al, Ag and Cu.From the experimental results, it is conclused that the conduction mechanism at highelectric field is SCLC. The dependences of temperature and kinds of metal on the trap filled electric field level can be well explained by this theory.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.439-449
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• 2002

This paper reviews our recent research works on the interconnection technologies in electronic packaging and assembly. At the aspect of advanced joining methods, laser-ultrasonic fluxless soldering technology was proposed. The characteristic of this technology is that the oxide film was removed through the vibration excitated by high frequency laser change in the molten solder droplet. Application researches of laser soldering technology on solder bumping of BGA packages were carried out. Furthermore, interfacial reaction between SnPb eutectic solder and Au/Ni/Cu pad during laser reflow was analyzed. At the aspect of soldered joints' reliability, the system for predicting and analyzing SMT solder joint shape and reliability(PSAR) has been designed. Optimization design method of soldered joints' structure was brought forward after the investigation of fatigue failure of RC chip devices and BGA packages under temperature cyclic conditions with FEM analysis and experimental study. At the aspect of solder alloy design, alloy design method based on quantum was proposed. The macroproperties such as melting point, wettability and strength were described by the electron parameters. In this way, a great deal of the experimental investigations was replaced, so as to realize the design and research of any kinds of solder alloys with low cost and high efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1134-1139
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• 2006

Electrical, optical, and structural properties of indium zinc oxide (IZO) anode films grown by a RF magnetron sputtering were investigated as functions of RF power and working pressure in pure Ar ambient. To investigate electrical, optical and structural properties of IZO anode films, 4-point probe and UV/VIS spectrometry, and X-ray diffraction (XRD) were performed, respectively. A sheet resistance of $15.2{\Omega}/{\square}$, average transmittance above 80 % in visible range, expecially above 85 % in 550 nm, and root mean square roughness of 1.13 nm were obtained from optimized IZO anode films grown in oxygen free ambient. All samples show amorphous structure regardless of RF power and working pressure due to low substrate temperature. In addition, XPS depth profile obtained from IZO/PES exhibits that there is no obvious evidence of interfacial reaction between IZO and PES substrate. Furthermore, current-voltage-luminance of the flexible phosphorescent flexible OLEDs fabricated on IZO anode shows dependence on sheet resistance of the IZO anode. These results indicate that the IZO anode is a promising candidate to substitute conventional ITO anode for high-quality flexible displays.

• Bulletin of the Korean Chemical Society
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• v.30 no.6
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• pp.1309-1312
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• 2009

Surface potential and growth processes of hexadecanethiol (HDT) self-assembled monolayers (SAMs) on Au(111) surfaces were examined by Kelvin probe method and scanning tunneling microscopy. It was found that surface potential strongly depends on surface structure of HDT SAMs. The surface potential shift for the striped phase of HDT SAMs chemisorbed on Au(111) surface was +0.45 eV, which was nearly the same as that of the flat-lying hexadecane layer physisorbed on Au(111) surface. This result indicates that the interfacial dipole layer induced by adsorption of alkyl chains is a main contributor to the surface potential change. In the densely-packed HDT monolayer, further change of the surface potential was observed, suggesting that the dipole moment of the alkanethiol molecules is an origin of the surface potential change. These results indicate that the work function of a metal electrode can be modified by controlling the molecular orientation of an adsorbed molecule.

• Journal of Information Display
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• v.11 no.1
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• pp.1-7
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• 2010

The intermediate connectors play crucial roles in the performance of tandem organic light-emitting diodes (OLEDs) because they are required to facilitate charge carrier transport and to guarantee transparency for light transmission and deposition compatibility. Understanding the physical properties of the intermediate connector is not only fundamentally important but is also crucial to developing high-efficiency organic devices with a tandem structure. In this study, several effective intermediate connectors in tandem OLEDs using a doped or non-doped organic p-n heterojunction were systematically investigated by studying their interfacial electronic structures and corresponding device characteristics. The working mechanisms of the intermediate connectors are discussed herein by referring to their relevant energy levels with respect to those of the neighboring organic layers. The factors affecting the operation of the intermediate connectors in tandem OLEDs, as demonstrated herein, provide guidance for the identification of new materials and device architectures for high-performance devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.173-173
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• 2000

Multilayered films (MLF) consisting of transition metals and semiconductors have drawn a great deal of interest because of their unique properties and potential technological applications. Fe/Si MLF are a particular topic of research due to their interesting antiferromagnetic coupling behavior. although a number of experimental works have been done to understand the mechanism of the interlayer coupling in this system, the results are controversial and it is not yet well understood how the formation of an iron silicide in the spacer layers affects the coupling. The interpretation of the coupling data had been hampered by the lack of knowledge about the intermixed iron silicide layer which has been variously hypothesized to be a metallic compound in the B2 structure or a semiconductor in the more complex B20 structure. It is well known that both magneto-optical (MO0 and optical properties of a metal depend strongly on their electronic structure that is also correlated with the atomic and chemical ordering. In order to understand the structure and physical properties of the interfacial regions, Fe/Si multilayers with very thin sublayers were investigated by the MO and optical spectroscopies. The Fe/si MLF were prepared by rf-sputtering onto glass substrates at room temperature with a totall thickness of about 100nm. The thicknesses of Fe and Si sublayers were varied from 0.3 to 0.8 nm. In order to understand the fully intermixed state, the MLF were also annealed at various temperatures. The structure and magnetic properties of Fe/Si MLF were investigated by x-ray diffraction and vibrating sample magnertometer, respectively. The MO and optical properties were measured at toom temperature in the 1.0-4.7 eV energy range. The results were analyzed in connection with the MO and optical properties of bulk and thin-film silicides with various structures and stoichiometries.

• Journal of Information Display
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• v.12 no.4
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• pp.209-212
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• 2011

The threshold voltage shift (${\Delta}V_{th}$) under positive-voltage bias stress (PBS) of InGaZnO (IGZO) thin-film transistors (TFTs) annealed at different temperatures in air was investigated. The dramatic degradation of the electrical performance was observed at the sample that was annealed at $700^{\circ}C$. The degradation of the saturation mobility (${\mu}_{sat}$) resulted from the diffusion of indium atoms into the interface of the IGZO/gate insulator after crystallization, and the degradation of the subthreshold slope (S-factor) was due to the increase in the interfacial and bulk trap density. In spite of the degradation of the electrical performance of the sample that was annealed at $700^{\circ}C$, it showed a smaller ${\Delta}V_{th}$ under PBS conditions for $10^4$ s than the samples that were annealed at $500^{\circ}C$, which is attributed to the nanocrystal-embedded structure. The sample that was annealed at $600^{\circ}C$ showed the best performance and the smallest ${\Delta}V_{th}$ among the fabricated samples with a ${\mu}_{sat}$ of $9.38cm^2/V$ s, an S-factor of 0.46V/decade, and a ${\Delta}V_{th}$ of 0.009V, which is due to the passivation of the defects by high thermal annealing without structural change.

• Journal of the Korean Magnetics Society
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• v.21 no.6
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• pp.214-218
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• 2011

In this study, we have systematically investigated the effect of sputtering conditions on the microstructural properties of Ag/CoFeB thin film on MgO substrate. It was found that the crystallinity and surface roughness of the Ag film strongly depends on the Ar sputtering pressure and sputtering power. Epitaxial growth of Ag(100) film on MgO(100) substrate was achieved under the sputtering conditions of high sputtering power and elevated temperature. XRR (X-ray reflectivity) and high-resolution TEM (transmission electron microscopy) measurements also revealed the interfacial roughening in the Ag/CoFeB interface due to the island structure formation and intermixing between Ag and CoFeB.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.361-368
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• 2018

We investigated the interfacial properties of fluorocarbon self-assembled monolayers (FC-SAMs) with different alkyl chain lengths. It was found that the substrate characteristics were changed rapidly with the fabrication time and temperature of the SAM. FC-3SAM, which has the shortest alkyl chain in this study, showed a contact angle of $54.1^{\circ}$ when it was fabricated in an electric oven at $60^{\circ}C$ for the first minute. The FC-3SAM showed a contact angle of up to $76.9^{\circ}$ when it was fabricated in an electric oven at the same temperature condition for 180 minutes. FC-10SAM, which has the longest alkyl chain in this study, showed a contact angle of $64.7^{\circ}$ when it was fabricated at a temperature condition of $60^{\circ}C$ for 1 minute, and a contact angle of $98.7^{\circ}C$ at a temperature condition of $60^{\circ}C$ for 180 minutes. It was found that the FC-10SAM shows an increased contact angle and hydrophobic properties due to a well-aligned molecular structure resulting from a strong van der Waals force. In contrast, the FC-3SAM shows a small contact angle due to the intermolecular disorder resulting from a weak van der Waals force. The average roughness of FC-SAMs was investigated using AFM. The surface roughness of FC-SAMs, which verifies the results of contact angle, was confirmed. At a fabrication time of 120 minutes, the FC-10SAM showed an improvement in average roughness by 62% compared to that of FC-3SAM due to its good alignment.