• 센서학회지
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• 제15권2호
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• pp.97-101
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• 2006

Silver electrode having a high Electrocatalytic activity is oxygen-permeable electrode, in which oxygen ad-atoms are adsorbed and moved toward YSZ electrolyte by bulk diffusion. It is the different point in comparison to usual porous electrodes, especially platinum, which react with oxygen only in TPBs(Three Phase Boundaries). Also ad-atoms at TPBs of Pt are diffused to YSZ electrolyte by interfacial diffusion mechanism. These properties were used for turning down the operating temperature of YSZ from over $600^{\circ}C$ to below $450^{\circ}C$. The different heat-treatment temperature between a working electrode and a reference electrode suppresses the formation of silver oxides and reduces a volatility of Ag as well. Above all, these own characteristics and special processes of Ag improved a long-term stability of a oxygen sensor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.148-151
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• 1995

Excimer laser has been used to fabricate superconducting YBa$_2$Cu$_3$O$\sub$7-x/(YBCO) thin films on various substrates. An XeCl excimer laser with an wavelength of 308 nm was used to deposit both buffer layer and superconducting thin film on sapphire substrate. The characterizations of the interface between thin film and substrate were performed. The interfacial properties of thin films on buffered sapphire and on bare sapphire were compared. With a 20 nm PrBa$_2$Cu$_3$O$\sub$7-x/(PBCO) buffer layer, no diffusion layer was observed between film and substrate while the diffusion layer with about 30 nm thickness was observed between film and sapphire without buffer layer.

• 한국결정성장학회지
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• 제14권2호
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• pp.50-57
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• 2004

Mercurous Bromide ($Hg_2Br_2$) crystals hold promise for many acousto-optic and opto-electronic applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method. We investigate the effects of solutal convection on the crystal growth rate in a horizontal configuration for diffusive-convection conditions and purely diffusion conditions achievable in a low gravity environment. Our results show that the growth rate is decreased by a factor of one-fourth with a ten reduction of gravitational acceleration near y = 2.0 cm. For 0.1 $g_O$ the growth rate pattern exhibits relatively flat which is intimately related to diffusion-dominated processes. The growth rate nonuniformity is regardless of aspect ratio across the interfacial positions from 0 to 1.5. Also, the effect of a factor of the ten reduction in the gravitational acceleration is same to both Ar = 5 and 2. The enlargement in the molecular weight of B from 50 to 500 by a factor 4 causes a decrease in the maximum growth rate by the same factor, indicative of the effect of solutal gradients.

• 소성∙가공
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• 제6권2호
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• pp.136-144
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• 1997

(Ag-10%Ni)/Cu clad metals for electric contact switch were fabricated by cold-roll bonding process. 2 or 3 passes of cold-rolling was carried out for each process to investigate the effect of the rolling passes on the bonding property. The effect of the annealing temperature of copper before the cold-roll bonding on the bond strength was also studied. The specimen bonded with copper annealed below 30$0^{\circ}C$ before roll bonding showed good bond strength. This is because high stored energy in copper promoted the short range diffusion and the grain refinement of copper by the static recrystallization increased the degree of the interfacial coherency. The maximum peel strength of clad metals bonded with Cu annealed below 30$0^{\circ}C$ was 120N.

• Bulletin of the Korean Chemical Society
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• 제21권6호
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• pp.577-582
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• 2000

Interdiffusion process at interfaces of chemically identical polymers (e.g., deuterated-nondeuterated pairs) with different molecular weights or polymers with similar physical properties, is studied here by varying the diffusion time. Considering the vacancy flux ($J_v$) and adopting the Cahn-Hilliard interracial energy in describing this system, we can see that the variation of the interfacial composition profile with time is asymetric and the interface moves towards the polymer with the lower molecular weight as interdiffusion progresses. Furthermore, interface shift $\Delta\chi$, which characterizes the interdiffusion between polymers, agrees well with the behaviors of the existing experimental data. We can also obtain the interface shift factor C, which can be converted into values of $D_s$ (self-diffusion coefficient of the smaller molecules), from the slopes of the linear fits to the data of the interface shift.

• 설비공학논문집
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• 제26권8호
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• pp.366-374
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• 2014

Experimental mass transfer data, which were obtained for the $CO_2$-water slug flows in vertical tubes with 2, 5, and 8mm diameters, were analyzed in comparison with the penetration theory. It was found that a penetration model with molecular diffusion coefficient cannot predict the experimental data accurately. An effective diffusion coefficient, which considers enhancement effect of interfacial waves, was suggested to improve prediction. Another empirical factor was also suggested to consider the effect of non-uniform interface velocity. A modified penetration model was found to be capable of predicting the experimental data reasonably well.

• 한국결정성장학회지
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• 제14권4호
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• pp.160-168
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• 2004

We investigate the effects of solutal convection on the crystal growth rate in a horizontal configuration for diffusive-convection conditions and purely diffusion conditions achievable in a low gravity environment for a nonlinear thermal gradient. It is concluded that the solutally-driven convection due to the disparity in the molecular weights of the component A $(Hg_2Br_2)$ and B (CO) is stronger than thermally-driven convection for both the nonlinear and the linear thermal profiles, corresponding to $Gr_t= 8.5{\times}10^3,\; Gr_s = 1.05{\times}10^5$. For both solutal and thermal convection processes, the growth rates for the linear thermal profile (conducting walls) are greater than for the nonlinear case. With the temperature humps, there are found to be observed in undersaturation for diffusive-convection processes ranging from $D_{AB}$ = 0.087 to 0.87. For the vertical configurations, the diffusion mode is so much dominated that the growth rate and interfacial distribution is nearly regardless of the gravitational accelerations. Also, the diffusion mode is predominant over the convection for the gravity levels less than 0.1 $g_0$ for the horizontally oriented configuration.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.232-232
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• 2012

The doping of semiconducting elements is essential for the development of silicon quantum dot (QD) solar cells. Especially the doping elements should be activated by substitution at the crystalline sites in the crystalline silicon QDs. However, no analysis technique has been developed for the analysis of the activated dopants in silicon QDs in $SiO_2$ matrix. Secondary ion mass spectrometry (SIMS) is a powerful technique for the in-depth analysis of solid materials and the impurities analysis of boron and phosphorus in semiconductor materials. For the study of diffusion behaviour of B and P by SIMS, Si/$SiO_2$ multilayer films doped by B or P were fabricated and annealed at high temperatures for the activated doping of B and P. The distributions of doping elements were analyzed by SIMS. Boron found to be preferentially distributed in Si layer rather than the $SiO_2$ layer. Especially the B in the Si layers was separated to two components of an interfacial component and a central one. The central component was understood as the activated elements. On the other hand, phosphorus did not show any preferred diffusion.

• 한국세라믹학회지
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• 제49권6호
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• pp.637-641
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• 2012

Due to its high production cost and relatively high energy consumption during the Siemens process, poly-silicon makers have been continuously and eagerly sought another silicon route for decades. One candidate that consumes less energy and has a simpler acidic and metallurgical purification procedure is upgraded metallurgical-grade (UMG) silicon. Owing to its low purity, UMG silicon often requires special steps to minimize the impurity effects and to remove or segregate the metal atoms in the bulk and to remove interfacial defects such as precipitates and grain boundaries. A process often called the 'gettering process' is used with phosphorus diffusion in this experiment in an effort to improve the performance of silicon solar cells using UMG silicon. The phosphorous gettering processes were optimized and compared to the standard POCl process so as to increase the minority carrier lifetime(MCLT) with the duration time and temperature as variables. In order to analyze the metal impurity concentration and distribution, secondary ion mass spectroscopy (SIMS) was utilized before and after the phosphorous gettering process.

• Computers and Concrete
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• 제23권1호
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• pp.69-80
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• 2019

Modeling approach for mesoscopic model of concrete depicting mass transportation and physicochemical reaction is important since there is growing demand for accuracy and computational efficiency of numerical simulation. Mesoscopic numerical simulation considering binder, aggregate and Interfacial Transition Zone (ITZ) generally produces huge number of DOFs, which is inapplicable for full structure. In this paper, a three-dimensional multiscale approach describing three-phase structure of concrete was discussed numerically. An effective approach generating random aggregate in polygon based on checking centroid distance was introduced. Moreover, ITZ elements were built by parallel expanding the surface of aggregates on inner side. By combining mesoscopic model including full-graded aggregate and macroscopic model, cases related to diffusivity and thickness of ITZ, volume fraction and grade of aggregate were studied regarding the consideration of multiscale compensation. Results clearly showed that larger analysis model in multiscale model expanded the diffusion space of chloride ion and decreased chloride content in front of rebar. Finally, this paper addressed some worth-noting conclusions about the chloride distribution and rebar corrosion regarding the configuration of, rebar diameter, concrete cover and exposure period.