• 제목/요약/키워드: Interfacial Layer

검색결과 681건 처리시간 0.028초

Improvement of Adhesion Strength between Cu-based Leadframe and Fpoxy Molding Compound

  • Lee, Ho-Yoing
    • Transactions on Electrical and Electronic Materials
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    • 제1권3호
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    • pp.23-28
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    • 2000
  • A block-oxide layer was formed on the surface of Cu-based leadframe by chamical oxidation method in order to enhance the adhesion strength between Cu-based leadframe and epoxy molding compound (EMC) Using sandwiched double cantilever beam (SDCB) specimens, the adesion strength was measured in terms of interfacial fracture toughness, G$\sub$IC//Results showed that the black-oxide layer was composed of two kinds of layers: pebble-like Cu$_2$O layer and acicular CuO layer, At the initial stage of oxidation the Cu$_2$O layer was preferentially formed and thickened up to around 200 nm whithin 1 minute of the oxidation time. Then the CuO layer started to from atop of the Cu$_2$O layer and thickened up to around 1300 nm until 20 minutes. As soon as the CuO layer formed, the thickness of Cu$_2$O layer began to reduce and finally reached to around 150 nm. The pre-cleaned and the Cu$_2$O coated leadframes showed almost no adhesion of EMC, however, as the CuO precipitates appeared and became continuous, G$\sub$IC/ increased up to around 80 J/㎡. Further oxidation raised G$\sub$IC/ up. to around 100 J/㎡.

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후속열처리 및 고온고습 조건에 따른 Cu 배선 확산 방지층 적용을 위한 ALD RuAlO 박막의 계면접착에너지에 관한 연구 (Effects of Post-annealing and Temperature/Humidity Conditions on the Interfacial Adhesion Energies of ALD RuAlO Diffusion Barrier Layer for Cu Interconnects)

  • 이현철;정민수;배병현;천태훈;김수현;박영배
    • 마이크로전자및패키징학회지
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    • 제23권2호
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    • pp.49-55
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    • 2016
  • 차세대 반도체의 초미세 Cu 배선 확산방지층 적용을 위해 원자층증착법(atomic layer deposition, ALD) 공정을 이용하여 증착한 RuAlO 확산방지층과 Cu 박막 계면의 계면접착에너지를 정량적으로 측정하였고, 환경 신뢰성 평가를 수행하였다. 접합 직후 4점굽힘시험으로 평가된 계면접착에너지는 약 $7.60J/m^2$으로 측정되었다. $85^{\circ}C$/85% 상대습도의 고온고습조건에서 500시간이 지난 후 측정된 계면접착에너지는 $5.65J/m^2$로 감소하였으나, $200^{\circ}C$에서 500시간 동안 후속 열처리한 후에는 $24.05J/m^2$으로 계면접착에너지가 크게 증가한 것으로 평가되었다. 4점굽힘시험 후 박리된 계면은 접합 직후와 고온고습조건의 시편의 경우 RuAlO/$SiO_2$ 계면이었고, 500시간 후속 열처리 조건에서는 Cu/RuAlO 계면인 것으로 확인되었다. X-선 광전자 분광법 분석 결과, 고온고습조건에서는 흡습으로 인하여 강한 Al-O-Si 계면 결합이 부분적으로 분리되어 계면접착에너지가 약간 낮아진 반면, 적절한 후속 열처리 조건에서는 효과적인 산소의 계면 유입으로 인하여 강한 Al-O-Si 결합이 크게 증가하여 계면접착에너지도 크게 증가한 것으로 판단된다. 따라서, ALD Ru 확산방지층에 비해 ALD RuAlO 확산방지층은 동시에 Cu 씨앗층 역할을 하면서도 전기적 및 기계적 신뢰성이 우수할 것으로 판단된다.

Comparison of retention characteristics of ferroelectric capacitors with $Pb(Zr, Ti)O_3$ films deposited by various methods for high-density non-volatile memory.

  • Sangmin Shin;Mirko Hofmann;Lee, Yong-Kyun;Koo, June-Mo;Cho, Choong-Rae;Lee, June-Key;Park, Youngsoo;Lee, Kyu-Mann;Song, Yoon-Jong
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제3권3호
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    • pp.132-138
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    • 2003
  • We investigated the polarization retention characteristics of ferroelectric capacitors with $Pb(Zr,Ti)O_3$ (PZT) thin films which were fabricated by different deposition methods. In thermally-accelerated retention tests, PZT films which were prepared by a chemical solution deposition (CSD) method showed rapid decay of retained polarization charges as the thickness of the films decreased down to 100 nm, while the films which were grown by metal organic chemical vapor deposition (MOCVD) retained relatively large non-volatile charges at the corresponding thickness. We concluded that in the CSD-grown films, the thicker interfacial passive layer compared with the MOCVD-grown films had an unfavorable effect on retention behavior. We observed the existence of such interfacial layers by extrapolation of the total capacitance with thickness of the films and the capacitance of these layers was larger in MOCVD-grown films than in CSD-grown films. Due to incomplete compensation of surface polarization charges by the free charges in the metal electrodes, the interfacial field activated the space charges inside the interfacial layers and deposited them at the boundary between the ferroelectric layer and the interfacial layer. Such space charges built up an internal field inside the films, which interfered with domain wall motion, so that retention property at last became degraded. We observed less imprint which was a result of less internal field in MOCVD-grown films while large imprint was observed in CSD-grown films.

복합주조용 Al-Si-Mg 합금의 인장성질, 부식특성 및 주철과의 접합계면 화합물에 미치는 Cu 및 Zr 첨가의 영향 (Effects of Cu and Zr Addition on the Tensile Properties, Corrosion Characteristics and Interfacial Compounds with Cast Iron of Al-Si-Mg Alloy for Compound Casting)

  • 민경민;정기채;신제식;김정민
    • 한국재료학회지
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    • 제33권1호
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    • pp.8-14
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    • 2023
  • In order to broaden the range of application of light weight aluminum alloys, it is necessary to enhance the mechanical properties of the alloys and combine them with other materials, such as cast iron. In this study, the effects of adding small amounts of Cu and Zr to the Al-Si-Mg based alloy on tensile properties and corrosion characteristics were investigated, and the effect of the addition on the interfacial compounds layer with the cast iron was also analyzed. Although the tensile strength of the Al-Si-Mg alloy was not significantly affected by the additions of Cu and Zr, the corrosion resistance in 3.5 %NaCl solution was found to be somewhat lowered in this research. The influence of Cu and Zr addition on the type and thickness of the interfacial compounds layer formed during compound casting with cast iron was not significant, and the main interfacial compounds were identified to be Al5FeSi and Al8Fe2Si phases, as in the case of the Al-Si-Mg alloys.

LSGM계 고체산화물 연료전지의 전기화학적 성능에 미치는 계면반응층의 영향 (Effect of Interfacial Reaction Layer on the Electrochemical Performance of LSGM-Based SOFCs)

  • 김광년;문주호;김형철;손지원;김주선;이해원;이종호;김병국
    • 한국세라믹학회지
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    • 제42권10호
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    • pp.665-671
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    • 2005
  • LSGM is known to show very serious interfacial reaction with other unit cell components, such as electrode, electrode functional or buffering layers. Especially, the formation of very resistive LaSr$Ga_{3}$$O_{7}$ phase at the interface of an anode and an electrolyte is the most problematic one in LSGM-based SOFCs. In this study, we investigated the interfacial reactions in LSGM-based SOFCs under different unit cell configurations. According to the microstructural analysis on the interfacial layer between an electrolyte and its neighboring component, serious interfacial reaction zone was observed. From the electrical and electrochemical characterization of the cell, we found such an interfacial reaction zone not only increased the internal ohmic resistance but also decreased the OCV(Open Cell Voltage) of the unit cell, and thus consequently deteriorated the unit cell performance.

Crack behaviour of top layer in layered rocks

  • Chang, Xu;Ma, Wenya;Li, Zhenhua;Wang, Hui
    • Geomechanics and Engineering
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    • 제16권1호
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    • pp.49-58
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    • 2018
  • Open-mode cracks could be commonly observed in layered rocks. A concept model is firstly used to explore the mechanism of the vertical cracks (VCs) in the top layer. Then the crack behaviour of the two-layer model is simulated based on a cohesive zone model (CZM) for layer interfaces and a plastic-damage model for rocks. The model indicates that the tensile stress normal to the VCs changes to compression if the crack spacing to layer thickness ratio is lower than a threshold. The results indicate that there is a threshold for interfacial shear strength that controls the crack patterns of the layered system. If the shear strength is lower than the threshold, the top layer is meshed by the VCs and interfacial cracks (ICs). When the shear strength is higher than the threshold, the top layer is meshed by the VCs and parallel cracks (PCs). If the shear strength is comparative to the threshold, a combining pattern of VCs, PCs and ICs for the top layer can be formed. The evolutions of stress distribution in the crack-bound block indicate that the ICs and PCs can reduce the load transferred for the substrate layer, and thus leads to a crack saturation state.

LSGM계 음극지지형 고체산화물 연료전지에 적용된 LDC 완충층의 효과 (Effect of the LDC Buffer Layer in LSGM-based Anode-supported SOFCs)

  • 송은화;정태주;김혜령;손지원;김병국;이종호;이해원
    • 한국세라믹학회지
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    • 제44권12호
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    • pp.710-714
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    • 2007
  • LSGM$(La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.2}O_{3-{\delta}})$ is the very promising electrolyte material for lower-temperature operation of SOFCs, especially when realized in anode-supported cells. But it is notorious for reacting with other cell components and resulting in the highly resistive reaction phases detrimental to cell performance. LDC$(La_{0.4}Ce_{0.6}O_{1.8})$, which is known to keep the interfacial stability between LSGM electrolyte and anode, was adopted in the anode-supported cell, and its effect on the interfacial reactivity and electrochemical performance of the cell was investigated. No severe interfacial reaction and corresponding resistive secondary phase was found in the cell with LDC buffer layer, and this is due to its ability to sustain the La chemical potential in LSGM. The cell exhibited the open circuit voltage of 0.64V, the maximum power density of 223 $mW/cm^2$, and the ohmic resistance of $0.17{\Omega}cm^2$ at $700^{\circ}C$. These values were much improved compared with those from the cell without any buffer layer, which implies that formation of the resistive reaction phases in LSGM and then deterioration of the cell performance is resulted mainly from the La diffusion from LSGM electrolyte to anode.

A penny-shaped interfacial crack between piezoelectric layer and elastic half-space

  • Ren, J.H.;Li, Y.S.;Wang, W.
    • Structural Engineering and Mechanics
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    • 제52권1호
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    • pp.1-17
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    • 2014
  • An interfacial penny-shaped crack between piezoelectric layer and elastic half-space subjected to mechanical and electric loads is investigated. Using Hankel transform technique, the mixed boundary value problem is reduced to a system of singular integral equations. The integral equations are further reduced to a system of algebraic equations with the aid of Jacobi polynomials. The stress intensity factor and energy release rate are determined. Numerical results reveal the effects of electric loadings and material parameters of composite on crack propagation and growth. The results seem useful for design of the piezoelectric composite structures and devices of high performance.

Solution-processed electrophosphorescent devices with a thin fluoropolymer at the hole transport interfacial layer

  • Park, Jae-Kyun;Hwang, Gyoung-Seok;Lee, Tae-Woo;Chin, Byung-Doo
    • Journal of Information Display
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    • 제12권4호
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    • pp.223-227
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    • 2011
  • Electrophosphorescent devices with ionomer-type hole transport layers were investigated. On top of the 3,4-ethylenedioxy thiophene:poly(4-styrene sulfonate) [PEDOT:PSS] structures, fluoropolymer interfacial layers (FPIs) with different side chain lengths were introduced. Both for the PEDOT:PSS/FPI (layered) and PEDOT:PSS (mixed) structures with soluble phosphorescent emitters, the short-side-chain FPIs showed higher efficiency. The difference in the electrical properties of the two FPIs for bipolar (light-emitting) devices was not clear, but the hole-only device clearly showed the favored hole injection at the PEDOT:PSS/FPI structure with a shorter side chain, a copolymer of tetrafluoroethylene and sulfonyl fluoride vinyl ether.

The effect of interfacial layer thickness on the interface dipole energy in $O_2$ plasma treated metal/organic interface

  • Kim, Soo-Young;Lee, Jong-Lam
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.115-117
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    • 2009
  • Interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and 4,4'-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl are determined. After $O_2$ plasma treatment on thick-metal (>4 nm) coated ITO, the work function and interface dipole energy increased. In thin-metal (< 2 nm) coated ITO, no change in the interface dipole energy was found though the work function increased. Thus, the $O_2$ plasma treated thin (< 2 nm) interfacial layer reduced the hole injection barrier.

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