• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.324-327
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• 2014

Germanium (Ge) is a promising material for next generation nanoelectronics and multiple junction solar cells. This work investigated the electrical properties in Cu/p-type Ge Schottky diodes, using current-voltage (I-V) measurements. The Schottky barrier heights were 0.66, 0.59, and 0.70 eV from the forward ln(I)-V, Cheung, and Norde methods, respectively. The ideality factors were 1.92 and 1.78 from the forward ln(I)-V method and Cheung method, respectively. Such high ideality factor could be associated with the presence of an interfacial layer and interface states at the Cu/p-Ge interface. The reverse-biased current transport was dominated by the Poole-Frenkel emission rather than the Schottky emission.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.94-99
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• 1998

Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.

• Proceedings of the Korea Water Resources Association Conference
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• 2008.05a
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• pp.1838-1842
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• 2008

본 연구에서는 하구 유입 하천에서 발생하는 염수쐐기의 형상 및 거동특성을 구명하기 위하여 정상상태 염수쐐기 실험을 수행하였다. 길이에 비해 상대적으로 폭이 좁은 개수로의 상류부분에는 담수를 지속적으로 공급할 수 있는 담수공급장치를 설치하였고, 정상상태의 염수쐐기를 발생시키기 위하여 염수수조 측면에 지속적으로 염수를 공급할 수 있는 염수공급수조를 설치하였다. 실험조건은 담수 방류량과 이층류의 밀도차의 영향을 고려한 밀도프루드수(densimetric Froude number)를 기준으로 선정하였다. 실험결과 각 케이스별 염수쐐기의 형상은 중앙부에서 약간의 산포된 양상을 제외하고는 거의 선형을 이루는 것으로 관찰되었다. 경계층의 형상과 두께는 이층류의 농도장을 측정하고 밀도변동성분을 고려한 표준편차를 통하여 산정하였다. 그리고 염수쐐기의 선단부에 해당하는 리차드슨수와 경계층 두께와의 비교 등을 통해서 경계층의 양상을 파악하였다.

• Proceedings of the Membrane Society of Korea Conference
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• 1997.10a
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• pp.87-89
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• 1997

1. 서론 : 막을 이용한 분리기술의 실용화의 최대 과제는 선택성이 높고 용매의 투과용매의 투과속도가 높은 막재질 및 처리 면적이 큰 막의 개발이 필요하게 되었다. 이러한 성능 개발은 1960년대 cellulose acetate 계통의 막개발 이후 1980년대 지지층 고분자위에 다른 고분자 물질을 도포한 복합막(thin film composite layer)이 개발되어 막의 성능을 급격히 발전시켰다. 그 중에서 초박막화(ultrathin membrane)는 분리막에 의한 분리공정의 최대 결점인 낮은 투과량의 개선을 꾀할 수 있다는 장점 때문에 다양한 시도가 이루어지고 있다. 이러한 박막 제조 방법에는 박층분산법, 침지코팅법, 기상증착법, 계면중합법이 있으나, 섞이지 않는 두 계면 사이에서 고분자를 형성시키는 계면중합법은 수용상에 함침된 지지막위에 유기상을 계변에서 중합시켜 박막을 얻는 기술이다. 중합과정에서 일어나는 계면의 형성과정에 대한 연구는 미흡하기에 이에 본 연구는 시간에 따른 계면중합 반응 형성과정을 고찰하는 방법을 소개하고, 형성된 박막의 아론적, 실험적 두께 측정을 비교하였다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.34-41
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• 1993

Effect of high temperature annealing conditions on Ta$_{2}O_{5}$ thin films was investigated. Ta$_{2}O_{5}$ thin films were deposited on P-type silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using tantalum ethylate. Ta(C$_{2}H_{5}O)_{5}$, and nitrous oxide. N$_{2}$O. The microstructure changed from amorphous to polycrystalline above 700.deg. C annealing temperature. The refractive index, dielectric onstant and leakage current of the film increased as annealing temperature increased. However, annealing in oxygen ambient reduced leakage currents and dielectric constant due to the formation of interfacial SiO$_{2}$ layer. By optimizing annealing temperature and ambient, leakage current lower than 10$^{-8}$ A/cm$^{2}$ and maximum capacitance of 9 fF/${\mu}m^{2}$ could be obtained.

• Journal of the Korean Ceramic Society
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• v.29 no.6
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• pp.496-504
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• 1992

Alumina tubes suitable for the support of gas separation membranes have been prepared by the slipcasting technique. These supports have the average pore size of 0.1 ${\mu}{\textrm}{m}$ within the narrow distribution. The sol-gel dipcoating process of nanoparticulate sols is very sensitive to microstructure of the support, and the coating on the inside surface of the tube is found to be more successful than on the outside surface. Nanoparticulate silica sols (0.82 mol/ι) have been synthesized by an interfacial hydrolysis reaction between TEOS and high alkaline water. When coating an alumina tube with these sols, the minimum limits of the particle size and the aging time required for forming the coated gel layer at the given pH are provided. It is optimum to coat the support with less concentrated sols stabilized through aging for the appropriate time (more than 22 days) at the lower pH (pH 2.0) for producing a reproducible crack free thin film coating in composite membranes.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1413-1415
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• 2005

The OTFT performance depends strongly on the interfacial properties between an organic semiconductor and ${\alpha}$ metal electrode. The contact resistance is critical to the current flow in the device. The contact resistance arises mainly from the Schottky barrier formation due to the work function difference between the semiconductor and electrodes. We doped pentacene/source-drain interfaces with $F_4TCNQ$ (2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane), resulting in p-doped region at the SD contacts, in order to solve this problem. We found that the mobility increased and the threshold voltage decreased.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1733-1736
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• 2006

Nanosilver has intrinsic problem to adhesion on the surface of silica. To improve interfacial properties between nanosilver and silica substrate, a thin titanium film is introduced in this study. The titaniumcoated silica substrates are prepared by sputter technique. The commercial silver nanopaste with size around 3-7nm is used in this study. The results indicate thin layer of titanium can improve the bonding properties of nanosilver and expect to be used in fabrication of TFT display panel.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.678-684
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• 1994

The surface of alumina is capable of acquiring a change when it is in an aqueous solution. This surface change will have a strong influence on the surrounding ions, particularly those of opposite change known as the counter ions. A site-binding model of the {{{{ gamma }}-alumina/KCl(aq) interface was used to calculated theoretical surface ionization constants and P.Z.C.(Point of zero change) of {{{{ gamma }}-alumina. This paper was carried out to investigate the effect of calcination temperature on the acidic and electrical properties of pure {{{{ gamma }}-alumina prepared by the precipitation method from the Al(NO3)3.9H2O and NH4OH. From the experimental data it was shown that {{{{ gamma }}-alumina have a mainly Br nsted acid site. However, the acidity of {{{{ gamma }}-alumina decreased with increasing calcination temperature at strength Ho +9.3. The surface charge density of {{{{ gamma }}-alumina was increased with electrolyte ionic strength and calcination temperature.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.251-258
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• 1996

The reactions between an active metal brazing alloy and interlayers together with the effects of interlayer type on the interfacial microstructure change were investiaged for silicon nitride/stainless steel joint. The bending strengths were measured for joints with Mo, Cu, Ni interlayer type of different thicknesses. It was found that the interlayer with a low yield strength value is effective to improve the bending strength of the Si3N4/stainless steel joint. The maximum joint strength obtained at room temperature for a laminated Cu/Mo interlayer was about 460 MPa. The combined use of Mo and thin Cu layer was found to be effective in enhancing the bending strength for the Si3N4/S.S.316 joint.