• Journal of KIISE:Information Networking
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• v.32 no.2
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• pp.203-214
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• 2005

The integration of 3G networks and WLANs as complementary has been begun to attract much attention in industry as well as academia. This topic is becoming a burning issue, and one of the key questions which it raises is how to support a seamless vertical handoff. This paper introduces a new network interface selection algorithm for energy-efficient vertical handoff in tightly coupled systems capable of supporting seamless handoff. Our proposed scheme, Wise Interface Selection (WISE) switches the active network interface, after taking into consideration the characteristics of the network interface cards and the current level of data traffic, with the cooperation of the mobile terminals and network. Network interface switching operates independently on both the downlink and the uplink for the purpose of energy conservation. We show through simulation that less energy is consumed with WISE than when only a 3G network or WLAN interface is used, resulting in a longer lifetime for the mobile terminals. In the case of TCP connections, additional throughput gain can also be obtained.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.18 no.3
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• pp.241-247
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• 2009

It is important to satisfy the requirements and standards for the protections of passengers in a car accident. There are lots of studies on the crushing energy absorption of a structure members in automobiles. We have studied to investigate collapse characteristics and moisture absorption movements of CFRP(Carbon Fiber Reinforced Plastics) hat shaped sectional members when CFRP laminates are under the hygrothermal environment. In particular, the absorbed energy, mean collapse load and deformation mode were analyzed for side members which absorbed most of the collision energy. Variation of CFRP interlaminar numbers is important to increase the energy absorption capability. Therefore we have made a static collapse experiment to research into the difference of absorbed energy and deformation mode between moisture absorbed specimen and non-moisture absorbed.

• Journal of the Earthquake Engineering Society of Korea
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• v.18 no.3
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• pp.141-150
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• 2014

A methodology to evaluate the seismic performance of interface piping systems that cross the isolation interface in the seismically isolated nuclear power plant (NPP) was developed. The developed methodology was applied to the safety-related interface piping system to demonstrate the seismic performance of the target piping system. Not only the seismic performance for the design level earthquakes but also the performance for the beyond design level earthquakes were evaluated. Two artificial seismic ground input motions which were matched to the design response spectra and two historical earthquake ground motions were used for the seismic analysis of piping system. The preliminary performance evaluation results show that the excessive relative displacements can occur in the seismically isolated piping system. If the input ground motion contained relatively high energy in the low frequency region, we could find that the stress response of the piping system exceed the allowable stress level even though the intensity of the input ground motion is equal to the design level earthquake. The structural responses and seismic performances of piping system were varied sensitively with respect to the intensities and frequency contents of input ground motions. Therefore, for the application of isolation system to NPPs and the verification of the safety of piping system, the seismic performance of the piping system subjected to the earthquake at the target NPP site should be evaluated firstly.

• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.8
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• pp.1458-1467
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• 1992

Recently, the composite materials have been researched actively by many researchers because of its useful properties. Especially, an interface crack on the dissimilar material exposes the behavior of the mixed mode crack even though under only the tension stress. In the previous papers, crack energy density(CED) was shown as the crack behavior evaluation parameter which can be expressed consistently from the onset until a final fracture. In a present paper, the basic properties of CED on the interface crack are examined because the results by CED at the homogeneous material above are also expected to be held at the dissimilar material. And we proposed that the contribution of each mode of CED can be separated and be evaluated. Furthermore, the total CED and contribution of each mode are evaluated by domain integral through a finite element analysis at the elastic crack model and the basic examination are carried out.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2004.11a
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• pp.133-138
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• 2004

Proton exchange membrane fuel cell (PEMFC) is considered as a clean and efficient energy conversion det ice for mobile and stationary applications. Anions all the components of the PEMFC, the interface between the electrolyte ,and electrode catalyst plays an important role in determining tile cell performance since the electrochemical reactions take place at the interface in contact with tile reactant gases. Therefore, to increase the interface area and obtain a high-performance PEMFC, surface of the electrolyte membrane was roughened by Ar$^{+}$ beam bombardment. The results imply that by modifying surface of the electrolyte membrane, platinum loading can be reduced significantly without performance loss. To optimize the surface treatment condition, effects of ion dose density on characteristics of the membrane/electrode interface were examined by measuring the cell performance, impedance spectroscopy, and cyclic voltammograms. Surface of the modified membranes were characterized using scanning electron microscopy and FT-IR.R.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2018.11a
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• pp.596-597
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• 2018

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.83-88
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• 2005

The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

• Journal of Korea Foundry Society
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• v.33 no.4
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• pp.157-161
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• 2013

A ribbon-type polycrystalline silicon wafer was directly fabricated from liquid silicon via a novel technique for both a fast growth rate and large grain size by exploiting gas pressure. Effects of processing parameters such as moving speed of a dummy bar and the length of the solidification zone on continuous casting of the silicon wafer were investigated. Silicon melt extruded from the growth region in the case of a solidification zone with a length of 1cm due to incomplete solidification. In case of a solidification zone wieh a length of 2 cm, on the other hand, continuous casting of the wafer was impossible due to the volume expansion of silicon derived from the liquid-solid transformation in solidification zone. Consequently, the optimal length of the solidification zone was 1.5 cm for maintaining the position of the solid-liquid interface in the solidification zone. The silicon wafer could be continuously casted when the moving speed of the dummy bar was 6 cm/min, but liquid silicon extruded from the growth region without solidification when the moving speed of the dummy bar was ${\geq}$ 9 cm/min. This was due to a shift of the position of the solid-liquid interface from the solidification zone to the moving area. The present study reports experimental findings on a new direct growth system for obtaining silicon wafers with both high quality and productivity, as a candidate for an alternate route for the fabrication of ribbon-type silicon wafers.

• Proceedings of the Korean Nuclear Society Conference
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• 2005.10a
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• pp.135-136
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• 2005

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2018.05a
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• pp.137-138
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• 2018