• Title/Summary/Keyword: Interface energy

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A Study on the Application of Analytic Nodal Method to a CANDU-600 Reactor Analysis

  • C.S. Yeom;Ryu, H.;Kim, H.J.;Kim, Y.H.;Kim, Y.B.
    • Proceedings of the Korea Society for Energy Engineering kosee Conference
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    • 2000.11a
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    • pp.115-120
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    • 2000
  • The analysis of flux distribution under stead-state in large power reactors with assymetry reactivity insertions requires the use of three-dimensional diffusion calculations. For the purpose, consistently formulated modern nodal methods based on higher order interface techniques have become popular tools for flux distributions in large commercial nuclear reactors. Among the earlier developments, the nodal Green's function method obtains its nodal interface equation from the transverse-integrated integral diffusion equation using a finite-medium Green's function. In this method, the outgoing current from a node surface is formulated as a response of the incoming currents and the spatially integrated neutron source within the same node. The well-known nodal expansion method is also based on an interface partial current formulation. Nodal methods high-level interface variables, i.e., interface net current and flux, may be more computationally efficient than the nodal Green's function method because they have one fewer unknown per interface. The Analytic Nodal Method(ANM), which can be classified as an interface net current technique and, was faster in solving some standard benchmark problems than the other two methods.(omitted)

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An Extension Behavior of an Interface Kinked Crack by CED (CED에 의한 계면굴절균열의 진전거동)

  • 권오헌
    • Journal of the Korean Society of Safety
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    • v.11 no.2
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    • pp.9-15
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    • 1996
  • The characteristics on the extension of the CED(Crack energy density) concept to the interface kinked crack problems in a dissimilar material are examined. Each mode contributions of CED are found by symmetric and antisymmetric components and domain independent integrals. Finite element calculation is carried out to simulate the Interface kinked crack growth on bimaterial. The focus is the establishment of fracture criterion with CED and finding the orientation of crack extension. From the results, a prediction about the extension behavior of an interface kinked crack can be done. And we show that CED can be a parameter to indicate fracture criterion at an Interface kinked crack.

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Effect of Interface Reaction between ZnO:Al and Amorphous Silicon on Silicon Heterojunction Solar Cells (실리콘 이종 접합 태양 전지 특성에 대한 ZnO:Al과 비정질 실리콘 계면 반응의 영향)

  • Kang, Min-Gu;Tark, Sung-Ju;Lee, Jong-Han;Kim, Chan-Seok;Jung, Dae-Young;Lee, Jung-Chul;Yoon, Kyung-Hoon;Kim, Dong-Hwan
    • Korean Journal of Materials Research
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    • v.21 no.2
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    • pp.120-124
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    • 2011
  • Silicon heterojunction solar cells have been studied by many research groups. In this work, silicon heterojunction solar cells having a simple structure of Ag/ZnO:Al/n type a-Si:H/p type c-Si/Al were fabricated. Samples were fabricated to investigate the effect of transparent conductive oxide growth conditions on the interface between ZnO:Al layer and a-Si:H layer. One sample was deposited by ZnO:Al at low working pressure. The other sample was deposited by ZnO:Al at alternating high working pressure and low working pressure. Electrical properties and chemical properties were investigated by light I-V characteristics and AES method, respectively. The light I-V characteristics showed better efficiency on sample deposited by ZnO:Al by alternating high working pressure and low working pressure. Atomic concentrations and relative oxidation states of Si, O, and Zn were analyzed by AES method. For poor efficiency samples, Si was diffused into ZnO:Al layer and O was diffused at the interface of ZnO:Al and Si. Differentiated O KLL spectra, Zn LMM spectra, and Si KLL spectra were used for interface reaction and oxidation state. According to AES spectra, sample deposited by high working pressure was effective at reducing the interface reaction and the Si diffusion. Consequently, the efficiency was improved by suppressing the SiOx formation at the interface.

An Integrated Interface based on CIM between Energy Management System and Heterogeneous Systems (에너지 관리 시스템(EMS)과 이기종 시스템간 CIM 기반의 통합 인터페이스)

  • Kang, Dong Hyun;Lee, Yong Ik;Park, Jong Ho;Shin, Yong-Hack
    • Journal of Software Engineering Society
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    • v.24 no.3
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    • pp.111-115
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    • 2011
  • With the emergence of the smart grid era, the interest in green energy which reduce carbon emissions and environment-friendly smart grid which combines the advantages of power and IT technology is increasing around the world. To use the smart grid effectively heterogeneous systems such as EMS, MOS and WIS must be linked together. However, additional interface should be developed to link EMS and heterogeneous systems since IEC has only defines the interface for EMS. Especially, to link legacy system and new system, some software might need to be designed and developed because separate interfaces for connection can be developed depending on each system and environment. In this paper, we propose an integrated interface based on CIM for interconnection between systems. A proposed interface can integrate messages of heterogeneous system and will be able to reduce costs that could be incurred by the removal of the existing system and the addition of the new system.

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A Study on Energy Release Rate for Interface Cracks in Anisotropic Dissimilar Materials (이방성 이종재 접합계면 균열의 에너지 해방률에 관한 연구)

  • Kim, Jin-Gwang;Jo, Sang-Bong
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.25 no.11
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    • pp.1835-1843
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    • 2001
  • The energy release rate for an interface crack in anisotropic dissimilar materials was obtained by the eigenfunction expansion method and also was analyzed numerically by the reciprocal work contour integral method. It was shown that the results for orthotropic dissimilar materials are consistent with the other worker's results.

Measurement of Crack Length by Ultrasonic Attenuation Coefficients on Interfaces of Al/Epoxy Bonded Dissimilar Materials (Al/Epoxy 이종재 접합 계면의 초음파 감쇠계수에 의한 균열길이의 측정)

  • Park, Sung-Il;Chung, Nam-Yong
    • Proceedings of the KSME Conference
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    • 2003.11a
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    • pp.1109-1114
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    • 2003
  • The initial crack often occurs on the bonded interface and it is the general cause of the interface fracture. It is very significant to establish the measurement method of interfacial crack by applying the ultrasonic technology into the interface of bonded dissimilar materials. In this paper, the interfacial crack length was measured by ultrasonic attenuation coefficient in the Al/Epoxy bonded dissimilar materials of double-cantilever beam(DCB). The energy release rate, G, was obtained by the experimental and Ripling's equation measurement of compliance. The experimental results represent that the relation between interfacial crack length for the ultrasonic attenuation coefficient and energy release rate is increased proportionally. From the experimental results, a measurement method of the interfacial crack length by the ultrasonic attenuation coefficient was proposed and discussed.

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A Study on the Improvement of Stress Field Analysis in a Domain Composed of Dissimilar Materials

  • Song, Kee-Nam;Lee, Jin-Seok
    • Nuclear Engineering and Technology
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    • v.30 no.3
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    • pp.202-211
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    • 1998
  • Interfacial stresses at two-material interfaces and initial displacement field over the entire domain are obtained by modifying the potential energy functional with a penalty function, which enforces continuity of the stresses at the interface of two materials. Based on the initial displacement field and interfacial stresses, a new methodology to generate a continuous stress field over the entire domain has been proposed by combining the modified projection method of stress-smoothing and Loubignac's iterative method of improving the displacement field. Stress analysis is carried out on two examples made of dissimilar materials : one is a two-material cantilever composed of highly dissimilar materials and the other is a zirconium-lined cladding tube made of slightly dissimilar materials. Results of the analysis show that the proposed method provides an improved continuous stress field over the entire domain, and accurately predicts the nodal stresses at the interface, while the conventional displacement-based finite element method produces significant stress discontinuities at the interface. In addition, the total strain energy evaluated from the improved continuous stress field converges to the exact value in a few iterations.

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The effects of TCO/p-layer Interface on Amorphous Silicon Solar Cell (비정질 실리콘 태양전지에서 TCO/p층 계면 특성의 영향)

  • Ji, I.H.;Suh, S.T.;Choi, B.S.;Hong, S.M.
    • Solar Energy
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    • v.8 no.1
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    • pp.68-73
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    • 1988
  • In the glass/TCO/p-i-n a-Si/Al type of amorphous silicon solar cell, the effects on solar cell efficiency and metastability for the various kinds of TCO analyzed by SAM and ESCA, which was used to measure the diffusion profiles of In and Sn and the Fermi energy shifts in the TCO/p interface respectively. Indium which diffused into a-Si p-layer did not have any significant effects on the Fermi level shift of p-layer when the content of $B_2H_6/SiH_4$ in p-layer was at 1 gas%. The cell fabricated on $SnO_2$ turned out to have the best cell photovoltaic characteristics. ITO fabricated by electron beam deposition system, which was shown to have the greatest rate of diffusion of Indium in ITO/p interface produced the worst metastability among the cells tested.

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Contribution of the Interface Energies to the Growth Process of Cemented Carbides WC-Co

  • Lay, Sabine;Missiaen, Jean-Michel;Allibert, Colette H
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.332-333
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    • 2006
  • The driving forces and the probable processes of WC-Co grain growth are reanalysed from recent data of interface energy and microstructure. Grain growth is driven by the disappearing of the high energy WC/WC and WC/Co interfaces with habit planes different from {0001}, ${10\bar{1}0}$ and ${11\bar{2}0}$ facets and by the area decrease of the WC/WC and WC/Co interfaces with {0001} and ${10\bar{1}0}$ habit planes. Grain growth mainly results of dissolution-precipitation. Abnormal grains are likely formed by defects assisted nucleation.

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