• 한국컴퓨터정보학회:학술대회논문집
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• 한국컴퓨터정보학회 2014년도 제49차 동계학술대회논문집 22권1호
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• pp.77-79
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• 2014

본 논문에서는 Arduino의 I2C 통신을 통해 인터랙티브한 악기를 제안한다. 각각의 큐브는 서로를 인식하고 인식 후 집단이 된 큐브들은 하나의 악기가 된다. Arduino의 통신 핀을 알루미늄 호일에 연결하여 다른 큐브와 접촉 시 통신이 될 수 있도록 하였다. 통신이 이룬 큐브들을 rgbLED 색상 변화를 통해 시각적으로 접촉/비접촉을 나타냈다. 또한 Processing을 통해 그룹이 된 큐브들의 악기 소리를 제어하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.389-392
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and non-uniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between particle size and CMP with particle size analysis of used slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.184-187
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) lyaer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2-CMP$ process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis or used slurry.

• 실천공학교육논문지
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• 제8권2호
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• pp.111-120
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• 2016

여러 가지 센서를 이용한 IOT(Internet Of Thing) 시스템의 FPGA 설계용 교육장비를 소개한다. 센서들은 다양한 출력 방식을 가지고 있어서 출력 방식에 따른 센서 인터페이스 컨트롤러를 FPGA 상에서 설계가 필요하다. 본 장비는 아날로그 출력인 경우에 FPGA(Field Programmable Gate Array)내에 있는 ADC(Analog-to-Digital Converter) 방식과 디지털 출력인 경우에 $I^2C$(Inter-Integrated Circuit), SPI(Serial Peripheral Interface Bus) 통신방식 및 GPIO(General-Purpose Input/Output)를 통해 사용한 방식에 따른 여러 가지 센서 인터페이스 컨트롤러의 설계가 가능하다. 이미지 센서를 이용해서 영상 처리 하드웨어 설계가 가능하고 더불어 영상 및 영상처리 결과를 모니터에 출력하는 VGA(Video Graphics Array) 컨트롤러 설계도 가능하다. 본 장비는 유,무선 네트워크에 통신이 가능한 IOT 시스템을 위해서 한 칩에 디지털 하드웨어와 Linux System을 결합한SOC(System on Chip) 설계가 가능하다. 이 장비를 이용해서 "이미지센서 기반의 하드웨어 설계와 가속도센서 기반의 하드웨어 설계"의 사례를 소개하고 그 설계를 기반으로 "FPGA를 이용한 디지털시스템 설계" 교과목의 교육 가능한 사례를 소개한다. 학생들에 의해서 새롭게 설계한 하드웨어를 본 FPGA를 이용해서 하드웨어 장비에 적용시키는 능력을 배양할 수 있고, 또한 개념설계, 부분설계, 상세설계를 통해서 FPGA 기반 하드웨어의 창의적 종합설계 능력을 키울 수 있다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권3호
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• pp.339-345
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• 2016

This paper presents a two-stage power amplifier MMIC using a $0.4{\mu}m$ GaN-HEMT process. The two-stage structure provides high gain and compact circuit size using an integrated inter-stage matching network. The size and loss of the inter-stage matching network can be reduced by including bond wires as part of the matching network. The two-stage power amplifier MMIC was fabricated with a chip size of $2.0{\times}1.9mm^2$ and was mounted on a $4{\times}4$ QFN carrier for evaluation. Using a downlink LTE signal with a PAPR of 6.5 dB and a channel bandwidth of 10 MHz for the 2.6 GHz band, the power amplifier MMIC exhibited a gain of 30 dB, a drain efficiency of 32%, and an ACLR of -31.4 dBc at an average output power of 36 dBm. Using two power amplifier MMICs for the carrier and peaking amplifiers, a Doherty power amplifier was designed and implemented. At a 6 dB back-off output power level of 39 dBm, a gain of 24.7 dB and a drain efficiency of 43.5% were achieved.

• Journal of information and communication convergence engineering
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• 제14권1호
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• pp.40-44
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• 2016

The device coupling between the stacked top/bottom field-effect transistors (FETs) in two types of monolithic 3D inverter (M3INV) with/without a metal layer in the bottom tier is investigated, and then the regime of the thickness T_ILD and dielectric constant ε_r of the inter-layer distance (ILD), the doping concentration N_d (N_a), and length L_g of the channel, and the side-wall length L_SW where the stacked FETs are coupled are studied. When N_d (N_a) < 10¹⁶ cm^-3 and L_SW < 20 nm, the threshold voltage shift of the top FET varies almost constantly by the gate voltage of the bottom FET, but when N_d (N_a) > 10¹⁶ cm^-3 or L_SW > 20 nm, the shift decreases and increases, respectively. M3INVs with T_ILD ≥ 50 nm and ε_r ≤ 3.9 can neglect the interaction between the stacked FETs, but when T_ILD or ε_r do not meet the above conditions, the interaction must be taken into consideration.

• 전자공학회논문지A
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• 제33A권10호
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• pp.186-194
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• 1996

The SliM (sliding memory plane) array processor has been proposed to alleviate disadvantages of existing mesh-connected SIMD(single instruction stream- multiple data streams) array processors, such as the inter-PE(processing element) communication overhead, the data I/O overhead and complicated interconnections. This paper presents the deisgn and implementation of SliM image processor ASIC (application specific integrated circuit) chip consisting of mesh connected 5 X 5 PE. The PE architecture implemented here is quite different from the originally proposed PE. We have performed the front-end design, such as VHDL (VHSIC hardware description language)modeling, logic synthesis and simulation, and have doen the back-end design procedure. The SliM ASIC chip used the VTI 0.8$\mu$m standard cell library (v8r4.4) has 55,255 gates and twenty-five 128 X 9 bit SRAM modules. The chip has the 326.71 X 313.24mil$^{2}$ die size and is packed using the 144 pin MQFP. The chip operates perfectly at 25 MHz and gives 625 MIPS. For performance evaluation, we developed parallel algorithms and the performance results showed improvement compared with existing image processors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.731-734
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. Polishing pads play a key role in CMP, which has been recognized as a critical step to improve the topography of wafers for semiconductor fabrication. It is investigated the performance of $SiO_2-CMP$ process using commercial silica slurry as a pad conditioning temperature increased after CMP process. This study also showed the change of SEM images in the pore geometry on the CMP pad surface after use with a different pad conditioning temperature.

• ETRI Journal
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• 제28권1호
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• pp.103-106
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• 2006

We have fabricated a planar lightwave circuit (PLC) hybrid-integrated optical sub-assembly of a triplexer using a thin film filter (TFF)-attached wavelength division multiplexer (WDM) and photodiode (PD) carriers. Two types of TFFs were attached to a diced side of a silica-terraced PLC platform, and the PD carriers with a $45^{\circ}$ mirror on which pin-PDs were bonded were assembled with the platform. A clear transmitter eye-pattern and minimum receiver sensitivity of -24.5 dBm were obtained under 1.25 Gb/s operation for digital applications, and a second-order inter-modulation distortion (IMD2) of -70 dBc was achieved for an analog receiver.

• 마이크로전자및패키징학회지
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• 제23권4호
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• pp.19-24
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• 2016

Along the few nano sizing dimensions of integrated circuit (IC) devices, acceptable interlayer material for design is inevitable. The interlayer which include dielectric, interconnect, barrier etc. needs to achieve not only electrical properties, but also mechanical properties for endure post manufacture process and prolonging life time. For developing intermetallic dielectric (IMD) the mechanical issues with post manufacturing processes were need to be solved. For analyzing specific structural problem and material properties Raman spectroscopy was performed for various researches in Si semiconductor based materials. As improve of the laser and charge-coupled device (CCD) technology the total effectiveness and reliability was enhanced. For thin film as IMD developed material could be analyzed by Raman spectroscopy, and diverse researches of developing method to analyze thin layer were comprehended. Also In-situ analysis of Raman spectroscopy is introduced for material forming research.