• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.471.2-471.2
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• 2014

We demonstrate here that an improvement in precursor film density (green density) leads to a great enhancement in the photovoltaic performance of CuInSe2 (CISe) thin film solar cells fabricated with Cu-In nanoparticle precursor films via chemical solution deposition. A cold-isostatic pressing (CIP) technique was applied to uniformly compress the precursor film over the entire surface (measuring 3~4 cm2) and was found to increase its relative density (particle packing density) by ca. 20%, which resulted in an appreciable improvement in the microstructural features of the sintered CISe film in terms of lower porosity, reduced grain boundaries, and a more uniform surface morphology. The low-bandgap (Eg=1.0 eV) CISe PV devices with the CIP-treated film exhibited greatly enhanced open-circuit voltage (VOC, from 0.265 V to 0.413 V) and fill factor (FF, from 0.34 to 0.55), as compared to the control devices. As a consequence, an almost 3-fold increase in the average power conversion efficiency, 3.0 to 8.2% (with the highest value of 9.02%), was realized without an anti-reflection coating. A diode analysis revealed that the enhanced VOC and FF were essentially attributed to the reduced reverse saturation current density (j0) and diode ideality factor (n). This is associated with the suppressed recombination, likely due to the reduction in recombination sites such as grain/air surfaces (pores), inter-granular interfaces, and defective CISe/CdS junctions in the CIP-treated device. From the temperature dependences of VOC, it was confirmed that the CIP-treated devices suffer less from interface recombination.

• Progress in Superconductivity
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• 제8권2호
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• pp.175-180
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• 2007

High temperature superconductor $YBa_2Cu_3O_{7-x}$ (YBCO) films have been grown by in-situ electron beam evaporation on artificial metal tapes such as ion-beam assisted deposition (IBAD) and rolling assisted biaxially textured substrates (RABiTS). Deposition rate of the YBCO films is $10{\sim}100{\AA}/sec$. X-ray diffraction shows that the films are grown epitaxially but have inter-diffusion phases, like as $BaZrO_3\;or\;BaCeO_3$, at their interfaces between YBCO and yttrium-stabilized zirconia (YSZ) or $CeO_2$, respectively. Secondary ion mass spectroscopy depth profile of the films confirms diffused region between YBCO and the buffer layers, indicating that the growth temperature ($850{\sim}900^{\circ}C$) is high enough to cause diffusion of Zr and Ba. The films on both the substrates show four-fold symmetry of in-plane alignment but their width in the -scan is around $12{\sim}15^{\circ}$. Transmission electron microscopy shows an interesting interface layer of epitaxial CuO between YBCO and YSZ, of which growth origin may be related to liquid flukes of Ba-Cu-O. Resistivity vs temperature curves of the films on both substrates were measured. Resistivity at room temperature is between 300 and 500 cm, the extrapolated value of resistivity at 0 K is nearly zero, and superconducting transition temperature is $85{\sim}90K$. However, critical current density of the films is very low, ${\sim}10^3A/cm^2$. Cracking of the grains and high-growth-temperature induced reaction between YBCO and buffer layers are possible reasons for this low critical current density.

• 한국자기학회지
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• 제18권1호
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• pp.32-35
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• 2008

차세대 반도체 산업의 발전을 위하여 반도체 소자의 구조는 DRAM, FRAM, MRAM 등 여러 분야에서 다양한 연구가 진행되고 있다. 특히 이런 차세대 반도체 소자에서 금속 배선으로는 Cu가 사용되며, Cu 금속 배선을 위한 확산방지막에 대한 연구는 반드시 필요하다[1-3]. Cu 금속 배선을 위한 확산방지막에 대한 현재까지의 연구에서는 Tungsten(W)을 기반으로 Nitride(N)를 불순물로 첨가한 확산방지막에 대하여 연구되었다[4-7]. 이러한 W-N를 기반으로 본 연구에서는 물리적 기상 증착법(PVD) 방법인 RF Magnetron Sputter 방법으로 W-N 이외에 Carbon(C) 과 Boron(B)을 첨가하여 확산방지막의 특성을 확인하였고, 특히 Boron Target의 power를 변화하여 W-B-C-N 확산방지막의 Boron에 의한 특성과 열적 안정성을 연구하였다[8-10]. 실험은 다양한 Boron의 조성을 가지는 확산방지막을 증착하여 $\beta$-ray와 4-point probe를 사용하여 확산방지막의 특성을 확인하였고, 고온($700^{\circ}C{\sim}1000^{\circ}C$) 열처리한 후 X-ray Diffraction 분석을 하여 열적 안정성을 확인하였다.

• 한국세라믹학회지
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• 제37권4호
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• pp.381-387
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• 2000

Si3N4/stainless steel 316 joints with Ni buffer layer were fabricated by direct active brazing method (DIB) using Ag-Cu-Ti brazing alloy only and double brazing method (DOB) using Ag-Cu brazing alloy with Si3N4 pretreated with Ag-Cu-Ti brazing alloy. For the joint brazed by DIB method, Ti was segregated at the Si3N4/brazing alloy interface, but was not enough to form a stable joint interface. In addition, large amounts of Ni-Ti inter-metallic compounds were formed in tehbrazing alloy near the joint interface, which could deplete the contents of Ti involved in the interfacial reaction. However, for the joint brazed by DOB method, segregation of Ti at the joint interface were enough to enhance the formation of stable interfacial reaction products such as TiN and Ti-Si-Ni-N-(Cu) multicompounds, which restricted the formation of Ni-Tio inter-metallic compounds in the brazing alloy during brazing with Ni buffer layer. Fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was much improved by using DOB method rather than DIB method. It could be deduced that the differences of fracture strength of the joint with Ni buffer layer depending on brazing process adapted were directly affected by the formation of stable joint interface and the change in microstructure of the brazing alloy near the joint interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of Ni buffer layer in the joint was increased from 0.1 mm to 10 mm. It seems to due to the increased residual stress in the joint as the thickness of Ni buffer layer is increased. The maximum fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was 386 MPa, and the fracture of joint was originated at Si3N4/brazing alloy joint interface and propagated into Si3N4 matrix.

• Nuclear Engineering and Technology
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• 제54권7호
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• pp.2599-2605
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• 2022

The Korea Retrospective Dosimetry network (KREDOS) performed an inter-laboratory comparison to confirm the harmonization and reliability of the results of retrospective dosimetry using mobile phone. The mobile phones were exposed to ¹⁹²Ir while attached to the human phantoms in the field experiment, and the exposure doses read by each laboratory were compared. This paper describes the reference dosimetry performed to present the reference values for inter-comparison and to obtain additional information about the dose distribution. Reference dosimetry included both measurement using LiF:Mg,Cu,Si and calculation via MCNP simulation to allow a comparison of doses obtained with the two different methodologies. When irradiating the phones, LiF elements were attached to the phones and phantoms and irradiated at the same time. The comparison results for the front of the phantoms were in good agreement, with an average relative difference of about 10%, while an average of about 16% relative difference occurred for the back and side of the phantom. The differences were attributed to the different characteristics of the physical and simulated phantoms, such as anatomical structure and constituent materials. Nevertheless, there was about 4% of under-estimation compared to measurements in the overall linear fitting, indicating the calculations were well matched to the measurements.

• 마이크로전자및패키징학회지
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• 제22권3호
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• pp.51-56
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• 2015

솔더 조인트의 신뢰성 강화를 위해서 다양한 pad finish material이 사용되고 있으며, 최근에는 Electroless Ni Electroless Pd Immersion Gold (이하 ENEPIG) pad가 많이 사용되고 있다. 따라서, 본 연구는 상용화 되어 사용중인 Electrolytic Ni (soft Ni) pad와 최근 이슈가 되고 있는 ENEPIG pad에 대한 신뢰성 평가에 관한 것으로, 다양한 Cu 함량에 따른 거동을 관찰 하였다. Reflow 후 솔더와 pad간의 접합층은 $Cu_6Sn_5$에 Ni이 치환된 형태의 금속간 화합물로 구성되어 있었으며, ENEPIG pad의 경우, 접합층과 Ni layer 사이에 $Ni_3P$ (dark layer) layer가 관찰 되었다. 또한, Cu 함량에 따라 Dark layer의 두께를 제어할 수 있었다. 충격 낙하 시험 후, 파괴모드를 관찰한 결과 soft Ni pad와 ENEPIG pad에서 서로 다른 파괴모드가 관찰 되었으며, soft Ni의 경우, 1차 IMC와 2차 IMC 경계에서 파괴가 관찰 되었고, ENEPIG pad의 경우, dark layer에서 파괴가 관찰 되었다. IMC와 pad material, bulk 솔더와의 lattice mismatch에 의해 불안정한 계면이 존재하며, 이는 연속적인 외부 충격에 의해 가해진 열적, 물리적 스트레스를 IMC 계면으로 전송하기 때문에, 솔더의 신뢰성 향상을 위해서는 솔더 벌크의 제어와 IMC의 두께 및 형상의 제어는 필요하다.

• 한국산학기술학회논문지
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• 제16권12호
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• pp.8679-8683
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• 2015

세라믹은 고온에서 뛰어난 내마모성, 내부식성을 가지기 때문에 산업적 응용에 있어서 널리 사용된다. 세라믹은 금속과 비교해서 고온에서 더 큰 강도를 가지고 있고, 더 낮은 열전도도 및 열팽창 계수를 가진다. 그러나, 세라믹이 가진 취성의 성질은 전기전자산업과 고온에서의 구조적 적용에의 넓은 적용을 제한한다. Ti 활성금속과 STS304를 IBAD 기술을 이용해서 동시에 증착시켜 STS304 스테인레스강에 $Al_2O_3$(알루미나)의 브레이징 접합강도에 어떤 영향을 미치는지 알아보았으며, 시험편들은 Ti 타겟과 Ti+ STS304 타겟 두 종류를 이용하여 두께를 변화시켜가며 증착하였다. 브레이징 접합을 위한 삽입금속으로는 일반적으로 사용되는 Ag-Cu 공정조성의 합금이 사용되었다. 브레이징 접합품의 강도는 Ag-Cu 삽입금속과 알루미나 사이의 반응층의 두께와 반응 생성물 조직에 의해 결정되며, 본 실험에서는 계면 반응의 메커니즘을 보다 구체화하고 계면 반응에 의한 경사기능성의 접합계면을 더욱 향상시키는 결과를 얻고자 한다.

• 한국환경과학회지
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• 제27권7호
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• pp.543-554
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• 2018

From November 2013 to December 2016, ambient fine particulate matter ($PM_{2.5}$) was sampled in the downtown area of Jeju City, South Korea, which has seen rapid urbanization. The atmospheric concentrations of elements were measured in the $PM_{2.5}$ samples. This study focused on Cd, Cr, Cu, Mn, Ni, Pb, As, Sb, Sn, V, and Zn. The concentrations of Al, Na, K, Fe, Ca, Mg, Sr, and La were also obtained for reference. The objectives of this study were to examine the contributions of these elements to $PM_{2.5}$ concentrations in downtown Jeju City, and to investigate the inter-element relationships and the elemental sources by using enrichment factors and principal components analysis (PCA). A composition analysis showed that the 19 elements constituted 6.65 % of the $PM_{2.5}$ mass, and Na, K, Al, Fe, Ca, Mg, and Zn constituted 98 % of the total ion mass. Seasonal trend analysis for the sampling period indicated that the concentrations of the elements increased from November to April. However, no substantial seasonal variations were found in the concentrations of the elements. The composition ratios of some elements (Cu/Zn, Cu/Cd, Cu/Pb, V/Ni, and V/La) were found to be out of range when compared to the literature from other urban areas. The ratios between the elements and the PCA results showed that local contaminant sources in Jeju City rarely influence the composition of $PM_{2.5}$. This suggests that the major sources of $PM_{2.5}$ in Jeju City may include long-range transport of fine particulate matter produced in other areas.

• 마이크로전자및패키징학회지
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• 제10권3호
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• pp.29-35
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• 2003

SnAg, SnAgCu, SnCu 무연솔더합금을 주조 상태에서 냉간압연한 후 열적으로 안정화한 시편 (TS)과, 실제 솔더 범프와 유사한 미세구조의 수냉에 급속 냉각(WQ)된 시편 두가지를 $100^{\circ}C$에서 크리프 실험을 행하였다. 급속냉각한 시편의 냉각속도는 140-150 K/sec로 primary $\beta-Sn$ 크기가 TS 시편보다 5∼10배 정도 작았으며, 기지내 primary $\beta-Sn$이 차지하는 분율은 증가하였다. 반면에 공정상 내의 $Ag_3Sn$상의 크기는 더 작아졌다. 크리프 실험 결과 WQ 시편의 최소크리프 변형율 속도($\{beta}_{min}$)가 TS 보다 약 $10^2$배 정도 작았으며. 더 큰 파괴시간을 보였다. TS-SnAg의 크리프파괴는 $Ag_3Sn$ 또는 $Cu_6Sn_5$에서의 공공의 핵생성, power-law 크리프에 의한 공공의 성장, 그리고 크리프 공공의 상호 연결로 일어났으며, WQ-SnAgCu는 시편이 두께가 얇아 네킹에 의해 파괴가 일어났다.

• Progress in Superconductivity
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• 제3권2호
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• pp.198-212
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• 2002

The effects of reacted precursors on phase evolution, microstructure, $J_{c}$ and junctional characteristic of the inter-granular contacts were investigated in Ag-sheathed T1-1223 tapes prepared using three kinds of reacted precursors, and compared to those in the tape prepared using an unreacted precursor The precursors were prepared by heat-treating a mixture of Sr-Ba-Ca-Cu-O, $Tl_2$$O_3$, PbO and $Bi_2$$O_3$ powders at $805^{\circ}C$ (precursor I ), $840^{\circ}C$ (precursor II ) and $905^{\circ}C$(precursor III) for 20 min. Tl-1223 phase content, grain size and J\ulcorner in the tapes appeared to increase in an order of precursors I, II and III Compared to tapes prepared using an unreacted precursor, the tapes prewar ed using precursors II and III revealed reduced pore and impurity densities and an enhanced texture. Also characteristic of inter -granular contacts and fraction of strong-links were improved. The improved properties are attributed to enhanced densification resulting from using the reacted precursors.s.