• 마이크로전자및패키징학회지
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• 제20권1호
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• pp.7-13
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• 2013

3D 적층 IC 개발을 위한 본딩 기술의 현황에 대해 알아보았다. 실리콘 웨이퍼를 본딩하여 적층한 후 배선 공정을 진행하는 wafer direct bonding 기술보다는 배선 및 금속 범프를 먼저 형성한 후 금속 본딩을 통해 웨이퍼를 적층하는 공정이 주로 연구되고 있다. 일반적인 Cu 열압착 본딩 방식은 높은 온도와 압력을 필요로 하기 때문에 공정온도와 압력을 낮추기 위한 연구가 많이 진행되고 있으며, 그 가운데서 Ar 빔을 조사하여 표면을 활성화 시키는 SAB 방식과 실리콘 산화층과 Cu를 동시에 본딩하는 DBI 방식이 큰 주목을 받고 있다. 국내에서는 Cu 열압착 방식을 이용한 웨이퍼 레벨 적층 기술이 현재 개발 중에 있다.

• Journal of Electrical Engineering and Technology
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• 제9권3호
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• pp.1009-1015
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• 2014

Chalcopyrite $CuInSe_2$ (CIS) thin films were prepared without Se- / S-containing gas by co-sputtering using $CuSe_2$ and $InSe_2$ selenide-targets and rapid thermal annealing. The grain size increased to a maximum of 54.68 nm with a predominant (112) plane. The tetragonal distortion parameter ${\eta}$ decreased and the inter-planar spacing $d_{(112)}$ increased in the RTA-treated CIS thin films annealed at a $400^{\circ}C$, which indicates better crystal quality. The increased carrier concentration of RTA-treated p-type CIS thin films led to a decrease in resistivity due to an increase in Cu composition at annealing temperatures ${\geq}350^{\circ}C$. The optical band gap energy ($E_g$) of CIS thin films decreased to 1.127 eV in RTA-treated CIS thin films annealed at $400^{\circ}C$ due to the improved crystallinity, elevated carrier concentration and decreased In composition.

• 한국주조공학회지
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• 제23권5호
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• pp.244-250
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• 2003

The aim of this study is fabricating of composite filler metal (CFM) by a combination of selective laser sintering (SLS) of stainless steel powders (RapidSteel $2.0^{TM}$ and liquid phase infiltration of Ag-28 wt.%Cu alloy. Porous stainless steel body with inter-connected pore channels was fabricated by SLS, binder decomposing and densification processes. By the direct contact infiltration, the narrow inter-particle channels of the porous body were completely filled with the Ag-28 wt.%Cu alloy infiltrant. During infiltration, the dissolved elements of Fe, Ni and Cr from the porous body were solved into copper solid solution phases, which consist of eutectic structure of composite metal matrix. The S10C/CFM/S10C joints, which have narrow clearance gaps between them up to 10 micrometers, were joined successfully by self-feeding of filler metal from the matrix of CFM. The CFM kept its original thickness and microstructure after brazing. The tensile strength of brazed specimen was higher than 30 kgf/$mm^2$ and showed a typical ductile fracture mode in the CFM.

• 열처리공학회지
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• 제3권1호
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• pp.8-16
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• 1990

Effects of thermomechanical treatments(TMT) on the microstructures and mechanical properties in Al-2.27%, Li-1.28%, Cu-0.63%, Mg-0.12%, Zr alloy were investigated. The TMT process improved the tensile strength. Growth of ${\delta}^{\prime}$, S' and $T_1$ phases was restrained by TMT processes while the density of ${\delta}^{\prime}$, S' and $T_1$ phases was increased by TMT processes. The TMT treated specimens tend to fail in inter-subboundary mode. The increases of strength by the T-HA processes were compared to those of the T-AHA processes.

• Journal of Magnetics
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• 제6권4호
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• pp.129-131
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• 2001

In order to investigate the effect of the interface on GMR, [NiFe(25 ${\AA}$)/Cu(24${\AA}$)]$_2$/Si thin film was epitaxially grown on HF-treated Si (001) substrate using a DC magnetron sputtering method. Typical GMR effects could be observed in epitaxial film with a weak antiferromagnetic exchange coupling while non epitaxial film showed unsaturated and broad MR curves probably due to inter-diffusion between NiFe and Cu layers. Ferromagnetic resonance (FMR) experiment showed two distinct absorption peaks in all films. Each peak was revealed to come from each NiFe layer with different magnetic property. In FMR measurement very clear interface in epitaxial films could be confirmed by a lower value of line width (ΔH) and higher M$\sub$s/ of epitaxial film than those of non epitaxial films, respectively.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.79-82
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• 2003

We prepared YBCO coated conductor by direct deposition of YBCO on Ag substrate by a MOCVD method. The Ag substrate was only prepared by cold rolling. The XRD data of the as-rolled Ag tape showed the formation of dominant (420) oriented grains. Processing variables were the oxygen partial pressure (Po$_2$) and deposition temperature (T$_{d}$). It was found that the a-axis oriented films were grown at lower T$_{d}$ below 80$0^{\circ}C$, while the c-axis oriented films were grown about 80$0^{\circ}C$. The surface of the films consisted of a second inclusion phase dispersed in the YBCO matrix. The Cu-rich phase regions were observed at the YBCO/Ag interface probably due to the inter-diffusion of Ag and Cu. Cu.

• 한국방송∙미디어공학회:학술대회논문집
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• 한국방송∙미디어공학회 2020년도 추계학술대회
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• pp.143-144
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• 2020

VVC (Versatile Video Coding)는 HEVC이후 차세대 표준 비디오 코딩으로 JVET(Joint Video Exploration)에 의해 2018년 표준화를 시작하였다. VVC에는 복원픽쳐의 변환-양자화에러에 의해 발생한 블로어, 블로킹, 링잉 아티팩트를 감소시키기 위하여 deblocking filter (DF), sample adaptive offset (SAO), adaptive loop filter(ALF)와 같은 모듈을 사용한다. 한편 CNN (Convolutional Neural Network)은 최근 이미지와 비디오 복원에 높은 성능을 보이고 있다. VVC에서 픽쳐는 CTU (Coding Tree Unit)으로 분할되고 각 CTU는 다시 CU (Coding Unit)으로 분할된다. 그리고 인코딩을 위한 중요한 정보들이 Picture, CTU, CU단위로 디코더에 전송된다. 이 논문에서는 화면 간 예측으로 인코딩 된 픽처에서 블록과 픽처정보를 이용한 딥러닝 기반의 인루프 필터 모델을 제안한다. 제안하는 모델은 화면 간 예측에서 QP, 4×4 블록단위의 모션벡터, 참조블록과의 시간적거리, CU의 깊이를 모델에 추가적인 정보로 이용한다.

• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.1-5
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• 2004

다층 연성기판은 높은 전기 전도성과 낮은 절연상수로 잘 알려진 구리와 폴리이미드로 구성되어 있다. 본 연구에서는 이러한 다층연성기판을 패턴된 스테인리스 스틸 위에 구리선을 전기도금하고 폴리이미드를 코팅함에 의해서 균일한 형태의 $5{\mu}m$-pitch의 전도선을 제조하는데 성공하였다. 또한, 다층기판 형성시 비아흘은 UV 레이저로 형성시켰으며 구리와 주석을 전기 도금함으로 이를 채웠다. 그런다음 비아와 전도선이 붙은 채로 스테인리스 스틸에서 벗겨냈다. 이렇게 형성된 각각의 층을 한번에 적층하여 다층연성기판을 완성하였다. 적층시 주석과 구리사이에 고체상태 반응(Solid state reaction)이 발생하여 $Cu_6Sn_5$ and $Cu_3Sn$을 형성하였으며 비아패드에 비아가 수직으로 위치한 완전한 형태의 층간 연결을 형성하였다. 이러한 비아 형성 공정은 V형태의 비아나 페이스트 비아와 비교할 때 좋은 전기적 특성, 저가공정등의 여러 장점을 가지고 있다.

• 마이크로전자및패키징학회지
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• 제21권4호
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• pp.63-68
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• 2014

For a nanoscale Cu/low-k wafer, inter-layer dielectric (ILD) and metal layers peelings, cracks, chipping, and delamination are the most common dicing defects by traditional diamond blade saw process. Sidewall void in sawing street is one of the key factors to bring about cracks and chipping. The aim of this research is to evaluate laser grooving & mechanical sawing parameters to eliminate sidewall void and avoid top-side chipping as well as peeling. An ultra-fast pico-second (ps) laser is applied to groove/singulate the 28-nanometer node wafer with Cu/low-k dielectric. A series of comprehensive parametric study on the recipes of input laser power, repetition rate, grooving speed, defocus amount and street index has been conducted to improve the quality of dicing process. The effects of the laser kerf geometry, grooving edge quality and defects are evaluated by using scanning electron microscopy (SEM) and focused ion beam (FIB). Experimental results have shown that the laser grooving technique is capable to improve the quality and yield issues on Cu/low-k wafer dicing process.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.325-331
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• 2007

In this study, the inter-metal dielectric material of FSG was changed by low-k material in $0.13{\mu}m$ foundry-compatible technology (FCT) device process based on fluorinated silicate glass (FSG). Black diamond (BD) was used as a low-k material with a dielectric constant of 2.95 for optimization and yield-improvement of the low-k based device process. For yield-improvement in low-k based device process, some problems such as photoresist (PR) poisoning, damage of low-k in etch/ash/cleaning process, and chemical mechanical planarization (CMP) delamination must be solved. The PR poisoning was not observed in BD based device. The pressure in CMP process decreased to 2.8 psi to remove the CMP delamination for Cu-CMP and USG-CMP. $H_2O$ ashing process was selected instead of $O_2$ ashing process due to the lowest condition of low-k damage. NE14 cleaning after ashing process lot the removal of organic residues in vias and trenches was employed for wet process instead of dilute HF (DHF) process. The similar-state of SRAM yield was obtained in Cu/low-k process compared with the conventional $0.13{\mu}m$ FCT device by the optimization of these process conditions.