• Title/Summary/Keyword: Integration Devices

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Implementation of AESA Radar Integration Analysis System by using Heterogeneous Media

  • Min-Jung Kang
    • Journal of the Korea Society of Computer and Information
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    • v.29 no.3
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    • pp.117-125
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    • 2024
  • In this paper, implement and propose an Active Electronically Scanned Array (AESA) radar integration analysis system which specialized for radar development by using heterogeneous media. Most analysis systems are used to analyze and improve the cause of defects, so they help the test easier. However, previous log analysis systems that operate only based on text are not intuitive and difficult to find the information user want at once if there is a lot of log information. so when an equipment defect occurs, there are limitations in analyzing the cause of defect. Therefore, the analysis system in this paper utilizes heterogeneous media. The media defined in this paper refers to recording text-based data, displaying data as image or video and visualizing data. The proposed analysis system classifies and stores data that transmitted and received between radar devices, radar target detection and Tracking algorithm data, etc. also displays and visualizes radar operation results and equipment defect information in real time. With this analysis system, it can quickly provide information what user want and assistance in developing high quality radar.

A Study on Electrical Properties of $Ta_2O_{5-x}$ Thin-films Obtained by $O_2$ RTA ($O_2$RTA 방법으로 제조된 $Ta_2O_{5-x}$ 박막의 전기적 특성)

  • Kim, In-Seong;Song, Jae-Seong;Yun, Mun-Su;Park, Jeong-Hu
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.8
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    • pp.340-346
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    • 2002
  • Capacitor material utilized in the downsizing passive devices and integration of passive devices requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. common capacitor materials, $Al_2O_3$, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$, TaN and et al., used until recently have reached their physical limits in their application to integration of passive devices. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism. This study presents the dielectric properties $Ta_2O_{5}$ MIM capacitor structure Processed by $O_2$ RTA oxidation. X-ray diffraction patterns showed the existence of amorphous phase in $600^{\circ}C$ annealing under the $O_2$ RTA and the formation of preferentially oriented-$Ta_2O_{5}$ in 650, $700^{\circ}C$ annealing and the AES depth profile showed $O_2$ RTA oxidation effect gives rise to the $O_2$ deficientd into the new layer. The leakage current density respectively, at 3~1l$\times$$10_{-2}$(kV/cm) were $10_{-3}$~$10_{-6}$(A/$\textrm{cm}^2$). In addition, behavior is stable irrespective of applied electric field. the frequency vs capacitance characteristic enhanced stability more then $Ta_2O_{5}$ thin films obtained by $O_2$ reactive sputtering. The capacitance vs voltage measurement that, Vfb(flat-band voltage) was increase dependance on the $O_2$ RTA oxidation temperature.

Design and Walking Control of the Humanoid Robot, KHR-2(KAIST Humanoid Robot-2)

  • Kim, Jung-Yup;Park, Ill-Woo;Oh, Jun-Ho
    • 제어로봇시스템학회:학술대회논문집
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    • 2004.08a
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    • pp.1539-1543
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    • 2004
  • This paper describes platform overview, system integration and dynamic walking control of the humanoid robot, KHR-2 (KAIST Humanoid Robot - 2). We have developed KHR-2 since 2003. KHR-2 has totally 41 DOF (Degree Of Freedom). Each arm including a hand has 11 DOF and each leg has 6 DOF. Head and trunk also has 6 DOF and 1 DOF respectively. In head, two CCD cameras are used for eye. In order to control all joints, distributed control architecture is adopted to reduce the computation burden of the main controller and to expand the devices easily. The main controller attached its back communicates with sub-controllers in real-time by using CAN (Controller Area Network) protocol. We used Windows XP as its OS (Operating System) for fast development of main control program and easy extension of peripheral devices. And RTX, HAL(Hardware Abstraction Layer) extension program, is used to realize the real-time control in Windows XP environment. We present about real-time control of KHR-2 in Windows XP with RTX and basic walking control algorithm. Details of the KHR-2 are described in this paper.

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Role of edge patterning and metal contact for extremely low contact resistance on graphene

  • Jo, Seo-Hyeon;Park, Hyung-Youl;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.294.2-294.2
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    • 2016
  • Graphene, a sigle atomic layered structure of graphite, has drawn many scientific interests for attractive future electronics and optoelectronics beyond silicon-based technology because of its robust physical, optical, and electrical properties. But high metal-graphene contact resistance prevents the successful integration of high speed graphene devices and circuits, although pristine graphene is known to have a novel carrier transport property. Meanwhile, in the recently reported metal-graphene contact studies, there are many attempts to reduce the metal-graphene contact resistance, such as doping and one-dimensional edge contact. However, there is a lack of quantitative analysis of the edge contact scheme through variously designed patterns with different metal contact. We first investigate the effets of edge contact (metal-graphene interface) on the contact resistance in terms of edge pattern design through patterning (photolithography + plasma etching) and electral measurements. Where the contact resistance is determined using the transfer length method (TLM). Finally, we research the role of metal-kind (Palladium, Copper, and Tianium) on the contact resistance through the edge-contacted devices, eventually minimizing contact resistance down to approximately $23{\Omega}{\cdot}{\mu}m$ at room temperature (approximately $19{\Omega}{\cdot}{\mu}m$ at 100 K).

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Reliable charge retention in nonvolatile memories with van der Waals heterostructures

  • Qiu, Dongri;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.282.1-282.1
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    • 2016
  • The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.

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An Accurate Modeling Approach to Compute Noise Transfer Gain in Complex Low Power Plane Geometries of Power Converters

  • Nguyen, Tung Ngoc;Blanchette, Handy Fortin;Wang, Ruxi
    • Journal of Power Electronics
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    • v.17 no.2
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    • pp.411-421
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    • 2017
  • An approach based on a 2D lumped model is presented to quantify the voltage transfer gain (VTG) in power converter low power planes. The advantage of the modeling approach is the ease with which typical noise reduction devices such as decoupling capacitors or ferrite beads can be integrated into the model. This feature is enforced by a new modular approach based on effective matrix partitioning, which is presented in the paper. This partitioning is used to decouple power plane equations from external device impedance, which avoids the need for rewriting of a whole set of equation at every change. The model is quickly solved in the frequency domain, which is well suited for an automated layout optimization algorithm. Using frequency domain modeling also allows the integration of frequency-dependent devices such inductors and capacitors, which are required for realistic computation results. In order to check the precision of the modeling approach, VTGs for several layout configurations are computed and compared with experimental measurements based on scattering parameters.

Solutions for Adjusting SELinux To Android-Powered Devices (안드로이드 응용 단말기를 위한 SELinux 환경설정 방법)

  • Vu, Anh-Duy;Han, Jea-Il;Kim, Young-Man
    • Proceedings of the KAIS Fall Conference
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    • 2011.12b
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    • pp.565-568
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    • 2011
  • Google Android framework consists of an operating system and software platform for mobile devices. Using a general-purpose Linux operating system in mobile device has some advantages but also security risks. Security-Enhanced Linux (SELinux) is a kernel-based protection approach which can help to reduce potential damage from successful attacks. However, there are some challenges to integrate SELinux in Android. In this research, we do a study on how to do the integration and find out four challenges. The first one is that the Android file system (yaff2) does not support security namespace for extended attribute (xattr) which is required by SELinux. The second one is that it's difficult to apply SELinux policy to Dalvik process on which an Android application runs on. The third one is that Android lacks methods, tools and libraries to interact with SELinux. The last one is how to update the SELinux policy automatically when installing or removing an application. In this paper, we propose solutions for the above limitations that make the SELinux more adaptive and suitable for Android framework.

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The Design and Implementation of Remote Monitoring Technology for URC Robot (URC 로봇 원격 모니터링기술 설계 및 구현)

  • Lee, Tae-Hee;Lim, Dong-Sun;Kim, Joo-Man
    • Proceedings of the Korea Contents Association Conference
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    • 2006.05a
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    • pp.136-139
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    • 2006
  • In this paper, We are proposed the real-time monitor and control mechanism for intelligent robot called URC(Ubiquitous Robotic Companion). URC are intelligent robots designed as to interact with external digital device that can communicate through wire or wireless by integration the network and information technology into traditional robot. In this paper, we implemented the result of this study into the target robot called ISSAC4 and proved its practical worth. We designed it as be able to control on remote by such web browser as anywhere and anytime that show a status information for several controllers, devices, actuators and sensors of robot and guarantee a continuity of real-time image transferring by Client-Pull method and moving control of robot.

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A Study on the RF Frequency of Integrated Inductors Array (집적화 인덕터 어레이의 고주파 특성에 관한 연구)

  • Kim, In-Sung;Min, Bok-Ki;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.912-915
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    • 2004
  • Inductors material utilized in the downsizing passive devices and Rf components requires the physical and electrical properties at given area such as inductors thickness reduction, inductance and q-factor increase, low leakage current and thermal stability. In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of $2{\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to $60{\mu}m$ and from 20 to $70{\mu}m$, respectively. Inductance and Q factor dependent on the RF frequency were investigated to analyze performance of inductor arrays

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Mechanism and Application of NMOS Leakage with Intra-Well Isolation Breakdown by Voltage Contrast Detection

  • Chen, Hunglin;Fan, Rongwei;Lou, Hsiaochi;Kuo, Mingsheng;Huang, Yiping
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.4
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    • pp.402-409
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    • 2013
  • An innovative application of voltage-contrast (VC) inspection allowed inline detection of NMOS leakage in dense SRAM cells is presented. Cell sizes of SRAM are continual to do the shrinkage with bit density promotion as semiconductor technology advanced, but the resulting challenges include not only development of smaller-scale devices, but also intra-devices isolation. The NMOS leakage caused by the underneath n+/P-well shorted to the adjacent PMOS/N-well was inspected by the proposed electron-beam (e-beam) scan in which VC images were compared during the in-line process step of post contact tungsten (W) CMP (Chemical Mechanical Planarization) instead of end-of-line electrical test, which has a long response time. A series of experiments based on the mechanism for improving the intra-well isolation was performed and verified by the inline VC inspection. An optimal process-integration condition involved to the tradeoff between the implant dosage and photo CD was carried out.