• Korean Journal of Optics and Photonics
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• v.15 no.2
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• pp.142-148
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• 2004

We investigated a Ti:LiNbO$_3$ based integrated-optic polarization controller with a Ti-indiffused waveguide along the z-axis utilizing the electro-optic effect. The device consists of a first quarter-wave (λ/4) phase-shifter followed by a half-wave(λ/2) and a second quarter-wave(λ/4) wave-plate, which is rotated synchronously with the first quarter-wave phase-shifter. We analyzed the operation principles of the device utilizing cascaded transfer matrices based on Jones matrix and Poincare sphere, simulated driving voltages for various input states of polarization (SOP), and theoretically confirmed transformations from any arbitrary input SOP into any general output SOP.

• Korean Journal of Optics and Photonics
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• v.15 no.3
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• pp.274-277
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• 2004

An integrated photonic radio frequency (RF) phase shifter has been proposed and fabricated using a nested dual Mach-Zehnder modulator configuration in a new electro-optic polymer. The fabricated device shows a continuous voltage control of the RF signal phase. A near-linear phase shift exceeding 108$^{\circ}$was obtained for a 16-GHz microwave signal by tuning the do control voltage over a 7.8- $V_{pp}$ range.e.

• Current Optics and Photonics
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• v.1 no.3
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• pp.239-246
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• 2017

A compact plasmonic switching scheme, based on the phase change of a thin-film chalcogenide material ($Ge_2Sb_2Te_5$), is proposed and numerically investigated at optical-communication wavelengths. Surface plasmon polariton modal analysis is conducted for various thicknesses of dielectric and phase-change material layers, and the optimized condition is induced by finding the region of interest that shows a high extinction ratio of surface plasmon polariton modes before and after the phase transition. Full electromagnetic simulations show that multiple reflections inside the active region may conditionally increase the overall efficiency of the on/off ratio at a specific length of the active region. However, it is shown that the optimized geometrical condition, which shows generally large on/off ratio for any length of active region, can be distinguished by observing the multiple-reflection characteristic inside the active region. The proposed scheme shows an on/off switching ratio greater than 30 dB for a length of a few micrometers, which can be potentially applied to integrated active plasmonic systems.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.81-82
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• 2005

새로운 고 용량 광 저장 시스템 개발을 위하여 초 미세 개구를 가지는 마이크로 프로브 어레이시스템 완성을 목표로 연구를 진행하였다. 효율적인 초 미세 개구 생성을 위해 기존의 제작된 마이크로 프로브 위에 FIB 공정을 이용하여 40nm 크기를 가지는 어퍼쳐를 만들었다. 나노 어퍼쳐를 가지는 마이크로 프로브 어레이는 곧 마이크로 렌즈와 VCSEL 과 일체화된 광 기록 헤드시스템으로 준비될 예정이다. 멤스 공정을 이용한 이 시스템은 향후 높은 저장 용량과 빠른 전송속도를 달성할 수 있는 차세대 광정보저장기기에 적용 가능한 새로운 광 픽업 시스템을 발전시킬 수 있을 것으로 생각된다.

• Current Optics and Photonics
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• v.6 no.1
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• pp.15-22
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• 2022

This paper describes the construction of a phase shifter with low loss and small volume. To construct it, we use the two graphene layers that are separated by a hexagonal boron nitride (hBN) and embedded in a silicon waveguide. The refractive index of the waveguide is adjusted by applying a bias voltage to the graphene sheet to create an optical phase shift. This waveguide is a compact device that only has a radius of 5 ㎛. It has a phase shift of 6π. In addition, the extinction ratio (ER) is 11.6 dB and the insertion loss (IL) is 0.031 dB. Due to its unique characteristics, this device has great potential in silicon on-chip optical interconnection and all-optical multiple-input multiple-output processing.

• ETRI Journal
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• v.31 no.6
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• pp.770-777
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• 2009

We have developed a fully functional reconfigurable optical add-drop multiplexer (ROADM) switch module using a polymer integrated photonic lightwave circuit technology. The polymer variable optical attenuator (VOA) array and digital optical switch array are integrated into one polymer PLC chip and packaged to form a 10-channel VOA integrated optical switch module. Four of these optical switch modules are used in the ROADM switch module to execute 40-channel switching and power equalization. As a wavelength division multiplexer (WDM) filter device, two C-band 40-channel athermal arrayed waveguide grating WDMs are used in the ROADM module. Optical power monitoring of each channel is carried out using a 5% tap PD. A controller and firmware having the functions of a 40-channel switch and VOA control, optical power monitoring, as well as TEC temperature control, and data communication interfaces are also developed in this study.

• Korean Journal of Optics and Photonics
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• v.26 no.4
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• pp.203-208
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• 2015

Wavelength filters are essential components for selecting a certain wavelength channel of a WDM optical communication system. To realize wavelength filters with narrow bandwidth and high reflectivity, an apodized grating structure with length of 15 mm and index modulation of $5{\times}10^{-4}$ was designed. The device exhibited a reflectivity of 95%, 3-dB bandwidth of 0.28 nm, and 20-dB bandwidth of 0.70 nm on an 18 mm grating length.

• Korean Journal of Optics and Photonics
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• v.28 no.6
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• pp.346-350
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• 2017

A tunable filter incorporating an apodized grating with a high-refractive-index polymer layer is demonstrated. In the apodized tunable filter, the reflectivity is decreased compared to that of a uniform grating, because of the gradually decreased grating depth. To increase the reflectivity of the apodized grating, a polymer of high refractive index is adopted for the apodized grating, and then high reflectivity is obtained while maintaining a narrow bandwidth. The apodized tunable filter exhibits a 3-dB bandwidth of 0.51 nm and a 20-dB bandwidth of 1.05 nm, with 98.5% reflection.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.248-253
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• 2005

We designed and fabricated a compact multi-mode interference (MMI) wavelength demultiplexer using the concept of 'Improved Quasi-State' modes. The output power and extinction ratio were improved by utilizing modal phase error which is specially occurred in low-index contrast. For a designed demultiplexer, the mode propagation analysis with effective index approximation shows significant improvement of extinction ratio to -25 dB for both $1.31{\mu}m\;and\;1.51{\mu}m$ wavelength region and the split-length was reduced about 1/5 of other MMI devices. The fabricated device shows successful characteristics for both 1.31 and $1.55{\mu}m$ wavelengths. These results demonstrate the potential of low-index materials system and the embossing process for photonic integrated circuits.

• Current Optics and Photonics
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• v.3 no.6
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• pp.510-515
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• 2019

In this paper, we introduce a 1.3-㎛ 25-GHz waveguide-integrated vertical PIN type Ge-on-Si photodetector fabricated using a multi-project wafers service based on fringing field analysis in the depletion region. In general, 1.3-㎛ photodetectors fabricated using a commercial foundry service can achieve limited bandwidths because a significant amount of photo-generated carriers are located within a few microns from the input along the device length, and they are influenced by the fringing field, leading to a longer transit time. To estimate the response time, we calculate the fringing field in that region and the transit time using the drift velocity caused by the field. Finally, we compare the estimated value with the measured one. The photodetector fabricated has a bandwidth of 20.75 GHz at -1 V with an estimation error of <3 GHz and dark current and responsivity of 110 nA and 0.704 A/W, respectively.