• Journal of KIISE:Computing Practices and Letters
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• v.5 no.6
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• pp.782-792
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• 1999

효과적인 ATM 망의 관리는 연결 지향 환경, 다양한 서비스 등급, 대규모 트래픽, 가상 망 구성 그리고 여러가지 트래픽 유형 등과 같은 다양한 ATM 특성을 다룰 수 있어야만 한다. 이를 위해 ATM 포럼에서는 ATM 장치, 사설망, 공중망 및 그들간의 상호작용을 지원하기 위한 ATM 망 관리 참조 모델을 정의하였으며, 그 중 하나가 서로 다른 판매자로부터의 ATM 장비들간의 상호동작성을 보장하기 위해 SNMP 기반 망 관리 프로토콜을 통해 상호 연결된 인터페이스를 관리할 수 있도록 정의된 통합 지역 관리 인터페이스(ILMI) 프로토콜이다. ILMI의 목적은 두 인접한 ATM 장치로 하여금 그들 간에 공통의 ATM 링크에 대한 동작 파라메타를 자동적으로 구성할 수 있도록 함으로서, 관리자에 의해 수동 구성이 아닌 ATM 장치 상호간의 플러그 앤 플러그 기능을 지원하는데 있다. 본 논문에서는 이러한 ILMI 기술을 바탕으로 공중망 ATM 교환기에 연결된 가입자의 물리 인터페이스, ATM 계층 인터페이스, VPC 및 VCC의 구성 및 상태 정보를 효율적으로 관리하며, 가입자 시스템의 ATM 주소를 자동으로 등록, 관리할 수 있도록 하는 가입자 인터페이스 관리 시스템(SIMS)을 설계하고, 구현하였다. Abstract An effective ATM management must address the various features of ATM such as connection-oriented environment, varying class of service, large scale traffic, virtual network configurations and, and multiple traffic types. For this, ATM network management reference model defined by ATM Forum describes the various types of network management needed to support ATM devices, private networks, public networks, and the interaction between them. One of these types is Integrated Local Management Interface (ILMI) defined to manage interconnected interface through SNMP-based network management protocol for ensuring the interoperability of ATM devices from different vendors. The purpose of ILMI is to enable two adjacent ATM devices to automatically configure the operation parameters of the common ATM link between them and then to provide a Plug and Plug function to any ATM devices with not a passive configuration by manager but a automatic configuration. This paper design and implement a Subscriber Interface Management System (SIMS) which provide automatic registration and management of ATM address of subscriber system and efficiently manages physical interface of subscriber who is connected to public ATM switch, ATM layer interface, configuration information and status information of VPC and VCC.

• Korean Journal of Optics and Photonics
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• v.13 no.1
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• pp.32-37
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• 2002

Passive polarization mode splitters at λ= 1.55 ${\mu}{\textrm}{m}$ were designed and fabricated based on Ti:x-cut LiNbO$_3$ single-mode optical waveguide and two-mode interference theory. The splitting ratio with waveguide width 8 ${\mu}{\textrm}{m}$, branching angle 0.55$^{\circ}$ and interfering length 470 ${\mu}{\textrm}{m}$ showed 16.18 dB, 21.25 dB for TE and TM input polarization modes, respectively. Polarization cross-talk of -16.28 dB and -21.28 dB for TE and TM modes was achieved. Total insertion losses of 2.24 dB/cm (TE) and 2.41 dB/cm (TM) were also measured. The devices operated nearly wavelength independently over a range or 30 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.28-29
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• 2000

Optical power splitters and/or couplers are important components for optical signal distribution between channels both in wavelength division multiplexing(WDM) systems and photonic integrated circuits(PICs). Since polarization is usually not known after propagation in an optical fiber, passive WDM components have to be polarization insensitivity, Compared to alternatives such as directional couplers or Y-junction splitters, splitters based on multimode interference(MMI) have found a growing interest in recent yens because of their desirable characteristics, such as compact size, low excess loss, wide bandwidth, polarization independence, and relaxed fabrication tolerances$^{(1)}$ . These devices have been fabricated in polymers, silica, or III-V semiconductor materials. A1 $\times$ 4 MMI power splitter on InP materials that were suitable for application in the 1.55-${\mu}{\textrm}{m}$ region$^{(2)}$ . However, the fabrication process of the structure is too complicated and the photolithography tolerance is very tight. Also, a 1 $\times$ 16 InGaAsP/InP MMI power splitter with an excess loss of 2.2dB and a splitting ratio of 1.5dB was demonstrated by using deep etching$^{(3)}$ . The deep etching of the sidewalls through the entire guide layer of the slab waveguide resulted in a number of drawbacks$^{(4)}$ . (omitted)

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.27 no.4
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• pp.361-370
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• 2017

Objectives: This study evaluated the diesel engine exhaust (DEE) exposure levels of door-to-door deliverers in Daegu from July to September. Methods: We measured exposure levels of DEE surrogates for the same door-to-door deliverers who joined the particulate matter 2.5 exposure study previously published in this journal. Black carbon(BC) concentrations were measured using real-time BC monitoring devices with 1 minute interval. $NO_2$ concentrations were monitored using passive badges. DEE exposure data were analyzed using the same characteristics and GPS information as the first study. Results: A total of 40 measurements of BC concentrations and $NO_2$ concentrations were collected during delivery of parcels. The average exposure levels to BC, and $NO_2$ were $2.23{\mu}g/m^3$ ($0.001-350.85{\mu}g/m^3$) and 21.26 ppb(3.3-61.37 ppb), respectively. Exposure levels to BC according to the day of a week and coverage areas were not significantly different(p>0.05). Delivery trucks manufactured before 2006 caused significantly higher exposure to BC than the trucks manufactured after 2006(p<0.05). Exposure levels of BC integrated for each time in residential area and roadsides were $1.96{\mu}g/m^3$ and $3.46{\mu}g/m^3$, respectively, and the difference was statistically significant(p<0.001). The Pearson correlation coefficients between the ambient $PM_{2.5}$ and BC was significant, r=0.26(p<0.01); however, the correlations between $PM_{2.5}$ and ambient $PM_{2.5}$, and between BC of DEE and $PM_{2.5}$ of DEE did not show a significant correlation Conclusions: BC and $NO_2$ exposure levels were significantly lower when door-to-door deliverers drove newer trucks. BC exposure levels of deliverers were higher in roadsides than in residential area. DEE from nearby vehicles through open windows might be the main source of BC exposure.

• Journal of the Korean earth science society
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• v.28 no.5
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• pp.572-584
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• 2007

The quantification of ammonia concentrations has received a lot of scientific attention. Numerous devices for the quantification of $NH_3$ in the ambient air have been developed to provide more technical possibilities for research in abating $NH_3$ emission from various source processes. For the proper quantification of $NH_3$, a number of sampling methods have been discussed by grouping them into different categories based on the principle of functioning. In general, active samplers employ pumps to draw air in, while passive samplers are exposed to air over a certain period of time to obtain integrated signature of $NH_3$. In case of the former, impingers and absorption flasks can be employed simultaneously with suitable absorbents to capture $NH_3$ passing through them. The methods of analysis include both in-situ and laboratory determination. In the laboratory, colorimetric or ion chromatographic methods are generally used for its quantification. In the field, a number of real time analyzers have been proven to be useful. These real time analyzers can be grouped according to their principle of operation. These analyzers may use the principle of spectroscopy (e.g. DOAS), photoacousticics (e.g. photoacoustic monitor) or Chemiluminescence ($NO_x$ analyzer). The automated annular denuder sampling system with on-line analyzer is also suitable for continuous monitoring of ammonia in air.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.807-811
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• 2003

We investigated the electrical characterisitics of T $a_2$ $O_{5}$ (tantalum pentoxide) film and Ti-O/T $a_2$ $O_{5}$ film deposited on $Al_2$ $O_3$based substrate. Ta (tantalum) electrode and $Al_2$ $O_3$ substrate was used for the purpose of simplifying the manufacturing process in IPD's (integrated passive devices). Dielectric materials (T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ films) deposited on Ta/Ti/A $l_2$ $O_3$ were annealed at 700 $^{\circ}C$ for 60 sec. in vacuum. The XRD results showed that as-deposited T $a_2$ $O_{5}$ film possessed amorphous structure, which was transformed to crystallines by rapid thermal heat treatment. We compared the lnJ- $E^{{\frac}{1}{2}}$, C-V, C-F of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by introducing Ti-O buffer layer and conduction mechanisms of T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ could be interpreted appropriately by Schottky emission effect.

• Journal of Korean Association for Spatial Structures
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• v.19 no.3
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• pp.51-59
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• 2019

A hybrid mid-story seismic isolation system with a smart damper has been proposed to mitigate seismic responses of tall buildings. Based on previous research, a hybrid mid-story seismic isolation system can provide effective control performance for reduction of seismic responses of tall buildings. Structural design of the hybrid mid-story seismic isolation system is generally performed after completion of structural design of a building structure. This design concept is called as an iterative design which is a general design process for structures and control devices. In the iterative design process, optimal design solution for the structure and control system is changed at each design stage. To solve this problem, the integrated optimal design method for the hybrid mid-story seismic isolation system and building structure was proposed in this study. An existing building with mid-story isolation system, i.e. Shiodome Sumitomo Building, was selected as an example structure for more realistic study. The hybrid mid-story isolation system in this study was composed of MR (magnetorheological) dampers. The stiffnessess and damping coefficients of the example building, maximum capacity of MR damper, and stiffness of isolation bearing were simultaneously optimized. Multi-objective genetic optimization method was employed for the simultaneous optimization of the example structure and the mid-story seismic isolation system. The optimization results show that the simultaneous optimization method can provide better control performance than the passive mid-story isolation system with reduction of structural materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.99-104
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• 2020

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.11
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• pp.63-70
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• 2001

We demonstrate the MMIC (monolithic microwave integrated circuit) frequency doublers generating stable and low-cost 29 GHz local oscillator signals from 14.5 GHz input signals. These devices were designed and fabricated by using the M MIC integration process of $0.1\;{\mu}m$ gate-length PHEMTs (pseudomorphic high electron mobility transistors) and passive components. The measurements showed S11 or -9.2 dB at 145 GHz, S22 of -18.6 dG at 29 GHz and a minimum conversion loss of 18.2 dB at 14.5 GHz with an input power or 6 dBm. Fundamental signal of 14.5 GHz were suppressed below 15.2 dBe compared to the second harmonic signal at the output port, and the isolation characteristics of fundamental signal between the input and the output port were maintained above :i0 dB in the frequency range 10.5 GHz to 18.5 GHz. The chip size of the fabricated MMIC frequency doubler is $1.5{\times}2.2\;mm^2$.