• The Journal of Society for e-Business Studies
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• v.12 no.2
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• pp.31-45
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• 2007

Over the past decades, there have been numerous studies for approaches to build and operate electronic government systems. Among those studies, work breakdown structure(WBS) has been gained attention increasingly. As a general system engineering techniques. WBS is a kind of methods to engineer and manage electronic government systems effectively. WBS is to organizes tasks and data items for management and engineering for electronic government systems. In this paper, the authors proposed a conceptual WBS model for management and engineering electronic government systems. Also, the authors conducted a case study based on the conceptual WBS model. The results of this study provide useful insights and guidelines for applying the WBS to management and engineering for electronic government systems. The authors believed that the conceptual WBS models will be widely used to management and engineering an electronic government systems.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.3
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• pp.33-39
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• 1983

New Schottky devices with thin stepped oxide layer (about 1000 ${\AA}$) along the edge of metal-semiconductor junction have been designed and fabricated. The breakdown voltages of these diodes have been compared with those of conventional metal overlap and P guard ring Schottky diode structures. Thin stepped oxide layer has been grown by the process of T.C.E. oxidation. In order to compare and demonstrate the improved down phenomena of these devices, conventional metal overlap diode and P guard ring which have the same dimension with new devices have also been integrated in a same New Schottty devices structured with thin stepped oxide layer have shown significant improvement in breakdown phenomena compared with conventional diodes.

• 한국경영정보학회:학술대회논문집
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• 2007.06a
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• pp.1023-1029
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• 2007

우리는 국가 경쟁력의 한 분야인 사업관리에 있어 계획, 수행, 성과관리, 개선에 최적의 프로세스 보유가 요구된다. 그러나 Project관리체계의 현 실태는 일정관리, 범위관리, 비용관리에 초점을 맞춘 일정관리체계, WBS(Work Breakdown Structure) 및 OBS(Organizational Breakdown Structure)관리, 비용관리체계의 부분 통합 혹은 서로의 연계 정도이다. 본 연구는 최적의 사업관리를 위하여 계약관리에 체계공학을 연계하여 계약 전에 WBS, IMP/IMS(Integrated Master Plan)/(Integratcd Master Schedule), TPM(Technical Performance Measurement) 등의 SEP(Systems Engineering Plan)와 계약 후의 이행을 검증 할 수 있는 과정의 Guideline을 제시하고, IEEE 1220, ANSI/EIA 632 순기 의거 개념설계부터 통합시험에 이르는 체계공학 순기에 따른 비용예측이 가능한 USC(University of Southern CalIfornia) 대학의 COSYSMO (Constructive Systems Engineering Cost ModeI)를 소개하고 적용 가능성을 고찰하며, Project의 전순기에 걸쳐 TPM 혹은 Quality를 비용과 일정에 통합하여 관리하는 PBEV(Performance Based Earned Value)모델을 소개하고 적용 가능성을 제시한다. Project 관리에 있어 System 차원을 강조한 SE(Systems Engineering), 비용예측의 CM(Cost Management), 성과관리를 위한 EVM(Earned Value Management)의 통합은 사업 관리에 역량을 강화하며 경쟁력을 향상 시킬 수 있는 적절한 접근으로 사료된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.546-550
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• 2001

A new Lateral Trench Insulated Gate Bipolar Transistor(LTIGBT) with p$^{+}$ diverter was proposed to improve the characteristics of the conventional LTIGBT. The forward blocking voltage of the proposed LTIGBT with p$^{+}$ diverter was about 140V. That of the conventional LTIGBT of the same size was 105V. Because the p$^{+}$ diverter region of the proposed device was enclosed trench oxide layer, he electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p$^{+}$ diverter was occurred, lately. Therefore, the p$^{+}$ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and proposed LTIGBT were 540A/$\textrm{cm}^2$, and 1453A/$\textrm{cm}^2$, respectively. The enhanced latch-up capability of the proposed LTIGBT was obtained through holes in the current directly reaching the cathode via the p$^{+}$ divert region and p$^{+}$ cathode layer beneath n$^{+}$ cathode layer./ cathode layer.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.11
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• pp.770-777
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• 2017

Building information modeling (BIM) has been receiving attention as an integrated information model instead of CAD since the 2000s. BIM technology was first used in the architectural field and was later introduced to the civil engineering field. However, the government announced a plan for the application of BIM to 20% of all SOC projects from 2020, so the adoption of BIM technology is expected to accelerate. In order to successfully adopt BIM, a systematic structure should be supported for integrated design information and implementation technology. Also, it is important to establish the relationship between information systems because many complicated factors are intertwined in the construction industry. In this study, we propose a framework for constructing integrated information through identifying the information relations for introducing BIM in the civil engineering industry. We applied this framework to a bridge project to confirm its effectiveness. This study can be applied to the integrated management of the construction process and costs by introduction of a work breakdown structure (WBS) to BIM. In addition, this study is expected to contribute to the adoption of BIM in the civil engineering field through the proposal of information system standardization in this field.

• Journal of the Korean Society for Railway
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• v.10 no.2 s.39
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• pp.103-111
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• 2007

The existing design materials by document type are restricted in searching and acquiring necessary design information because the materials consist of huge information and various document types. This study suggests a methodology to develop an electronic technical manual that can manage construction design materials by XML-base integrated information system. Electronic technical manual for design materials can provide visualized information through various multimedia tools such as multi-link, virtual reality and animation. Using an integrated electronic manual for construction project can prevent to miss necessary design information. The results of this study includes a data flow diagram to develop an interactive electronic technical manual (IETM) for construction design information. Finally the study suggests some scenarios for practical use and quantitative analysis of application effect analysis by AHP method.

• Journal of the Korean Operations Research and Management Science Society
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• v.15 no.1
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• pp.47-61
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• 1990

The purpose of this study is to construct a new model named Communication Consensus Value Weighted (CCVW) model based on inter-personal technical communication within a project team, and to design Feasibility Estimates Integrated Terminal System (FEITS) which is a subsystem of R & D Project Planning System/System Alternatives Feasibility Estimation System (RDPPL/SAFES) using the model as a key function for feasibility estimation in that system. This new model aims to integrate technical feasibility estimated by several estimators in the lowest level as the project work breakdown structure which is the indentical conception of a terminal system in RDPPL. The process to obtain the feasibility estimate integrated is presented in this paper.

• ETRI Journal
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• v.38 no.2
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• pp.272-279
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• 2016

In this paper, a new structure for an advanced high holding voltage silicon controlled rectifier (AHHVSCR) is proposed. The proposed new structure specifically for an AHHVSCR-based electrostatic discharge (ESD) protection circuit can protect integrated circuits from ESD stress. The new structure involves the insertion of a PMOS into an AHHVSCR so as to prevent a state of latch-up from occurring due to a low holding voltage. We use a TACD simulation to conduct a comparative analysis of three types of circuit - (i) an AHHVSCR-based ESD protection circuit having the proposed new structure (that is, a PMOS inserted into the AHHVSCR), (ii) a standard AHHVSCR-based ESD protection circuit, and (iii) a standard HHVSCR-based ESD protection circuit. A circuit having the proposed new structure is fabricated using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology. The fabricated circuit is also evaluated using Transmission-Line Pulse measurements to confirm its electrical characteristics, and human-body model and machine model tests are used to confirm its robustness. The fabricated circuit has a holding voltage of 18.78 V and a second breakdown current of more than 8 A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.421-424
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• 2004

As the deep sub-micron devices are recently integrated high package density, novel process method for sub $0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide $30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of $13.2[\Omega/cont.]$ at $0.3{\times}0.3{\mu}m^2$. The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of $25[%]{\sim}90[%]$ more than 55[sec].

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.845-848
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• 2009

Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronics circuits. Theyare also caleed power devices or when used in integrated circuits, called power ICs. Some common power devices are the power diode, thyristor, power MOSFET and IGBT (insulated gate bipolar transistor). A power diode or MOSFET operates on similar principles to its low-power counterpart, but is able to carry a larger amount of current and typically is able to support a larger reverse-bias voltage in the off-state. Structural changes are often made in power devices to accommodate the higher current density, higher power dissipation and/or higher reverse breakdown voltage. The vast majority of the discrete (i.e non integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. With this structure, one of the connections of the device is located on the bottom of the semiconductor.