• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.91-96
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• 2005

The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.153-159
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• 2007

In-cryostat helium lines are under installation to transfer a cryogenic helium into cold components in KSTAR device. In KSTAR, three kinds of helium should be supplied into the cold components, which are supercritical helium Into superconduction(SC) magnet system, liquid helium into current lead system, and gas helium into thermal shields. Cryogenic helium lines consist of transfer lines outside the cryostat, in-cryostat helium lines, and electrical breaks. In-cryostat helium lines should be guaranteed of leak tightness for tong time operation at high internal helium pressure of 20 bar. We wrapped the helium line with multi-layer insulator(MLI) to reduce radiation heat and insulated the surface of the high potential part with prepreg tape. The electrical break was fabricated by brazing ceramic tube with stainless steel tube. To ensure the operation reliability at operation temperature, all the electrical break have been examined by the thermal cycle test at liquid nitrogen and by the hydraulic test at 30 bar. And additional surface insulation was prepared with prepreg tape to give structural safety. At present most of the in-cryostat helium lines have been installed and the final inspection test is progressing.