• Journal of Electrochemical Science and Technology
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• v.2 no.2
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• pp.76-84
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• 2011

Potentiostatic oxidation of Pb-1.7%Sb alloy used in the manufacture of grids of lead-acid batteries over the potential range from -1.0V to 2.3V in 5M $H_2SO_4$ in the absence and the presence of 0.4M $H_3PO_4$ and the self-discharge characteristics of the oxide layer formed is studied by electrochemical impedance spectroscopy (EIS). Depending on the potential value, sharp variations in resistance and capacitance of the alloy are recorded during the oxidation and they can be used for identification of the various substances involved in passive layer. Addition of $H_3PO_4$ is found to deteriorate the insulating properties of the passive layer by the retardation of the formation of $PbSO_4$. $H_3PO_4$ completely inhibits the current and impedance fluctuations recorded in $H_3PO_4$-free solutions in the potential range 0.5 V-1.7 V. These fluctuations are attributed to the occurrence of competitive redox processes that involve the formation of $PbSO_4$, $PbOSO_4$, PbO and $PbO_2$ and the repeated formation and breakdown of the passive layer. Self-discharge experiments indicate that the amount of $PbO_2$ formed in the presence of $H_3PO_4$ is lesser than in the $H_3PO_4$-free solutions. The start of transformation of $PbSO_4$ into $PbO_2$ is greatly shortened. $H_3PO_4$ facilitates the diffusion process of soluble species through the passive layer ($PbSO_4$ and basic $PbSO_4$) but impedes the diffusion process through $PbO_2$.

• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.27-33
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• 1998

We have investigated tunneling magnetoresistance (TMR) properties of Fe/$Al_2O_3$/Co magnetic trilayer junctions sputtered on single-crystal Si (001) substrates. $Al_2O_3$ layers with thicknesses of 50~200 $\AA$ were deposited directly on the bottom ferromagnetic layer by a reactive rf sputtering. For comparsion, we prepared Pt/$Al_2O_3$/Pt tunnel junctions whose current-voltage (I-V) characteristics measured at 300 K indicated that reactively sputtered $Al_2O_3$ is a particularly good material for thin insulating barriers and allows us to form pinhole-free tunnel barriers. The magnetic tunnel junctions exhibit changes of tunnel resistance of about 0.1% at 300 K with an applied magnetic field and it was found that most junctions with Co as a top electrode have rather good I-V and TMR characteristics compared to those with Fe as a electrode. These results were discussed in relation to interfacial on the basis of those for Pt/$Al_2O_3$/Pt.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.222-225
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• 2001

The planar type inductors have a good potential for the application of miniaturized low power DC-DC converters. For those high quality application, the reduction of coil loss and also magnetic films which have good high frequency properties are required. Fabricated inductor was consisted of FeTaN/Ti magnetic film and electroplated Cu coil thickness of 100$\mu\textrm{m}$ and $SiO_2$ as a insulating layer. The inductor was designed double rectangular spiral shape for magnetic field highly confining within the device. The measured value of inductance and resistance were 980 nH and 1.7 $\Omega$ at 1 MHz as operating frequency of device. The Q factor is 3.55 at 1 MHz.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.5
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• pp.738-744
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• 2016

Current rating of a power cable can be calculated by the maximum allowable temperature in an insulating material considering the heat transfer from cable conductor. Therefore, it is very important to calculate the current rating using electrical equivalent circuit by calculated cable thermal circuit parameters but, it has not been fully investigated yet. In this paper, in order to determine the current rating of power cable, conventional calculation method has been reviewed considering the conductor resistance, loss factor of sheath, dielectric losses and thermal resistances based on the maximum allowable temperature of 345 kV $2500mm^2$ XLPE cable. To confirm the calculation result of the current rating, the conductor temperature should be examined whether it reaches the maximum allowable temperature by the thermal equivalent circuit of the cable. Then, utilizing EMTP (Electro-Magnetic Transient Program) which is a conventional program for electrical circuit, the thermal equivalent circuit was transformed to an electric equivalent circuit using an analogous relationship between thermal circuit and electrical circuit, and temperature condition including cable conductor, sheath, cable jacket could be calculated by the current rating of 345 kV $2500mm^2$ XLPE cable.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.27-33
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• 2003

Pulsed magnetron sputtering of graphite target was employed for deposition of diamond-like carbon (DLC) films. Time-resolved probe measurements of magnetron discharge plasma have been performed. It was shown that the pulsed magnetron discharge plasma density ($∼10^{17}$ $m^{-3}$ ) is close to that of vacuum arc cathode sputtering of graphite. Raman spectroscopy was sed to examine DLC films produced at low ( $U_{sub}$ / < 1 kV) pulsed bias voltages applied to the substrate. It has been shown that maximum content of diamond-like carbon in the coating (50-60%) is achieved at energy per deposited carbon atom of $E_{c}$ =100 eV. In spite of rather high percentage of $sp^3$-bonded carbon atoms and good scratch-resistance, the films showed poor adhesion because of absence of ion mixing between the film and the substrates. Electric breakdowns occurring during the deposition of the insulating DLC film also thought to decrease its adhesion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.835-843
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• 2008

We have fabricated the source-drain electrodes for OTFTs by screen printing method and manufactured Ag pastes as conductive paste. To obtain excellent conductivity and screen-printability of Ag pastes, the dispersion characteristics of Ag pastes prepared from two types of acryl resins with different molecular structures and Ag powder treated with caprylic acid, triethanol amine and dodecane thiol as surfactant respectively were investigated. The Ag pastes containing Ag powder treated with dodecane thiol having thiol as anchor group or AA4123 with carboxyl group(COOH) of hydrophilic group as binder resin exhibited excellent dispersity. But, Ag pastes(CA-41, TA-41, DT-41) prepared from AA4123 fabricated the insulating layer since the strong interaction between surface of Ag powder and carboxyl group(COOH) of AA4123 interfered with the formation of conduction path among Ag powders. The viscosity behavior of Ag pastes exhibited shear-thinning flow in the high shear rate range and the pastes with bad dispersion characteristic demonstrated higher shear-thinning index than those with good dispersity due to the weak flocculated network structure. The output curve of OTFT device with a channel length of 107 ${\mu}m$ using screen-printed S-D electrodes from DT-30 showed good saturation behavior and no significant contact resistance. And this device exhibited a saturation mobility of $4.0{\times}10^{-3}$ $cm^2/Vs$, on/off current ratio of about $10^5$ and a threshold voltage of about 0.7 V.

• Polymer(Korea)
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• v.26 no.5
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• pp.623-633
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• 2002

The flame retardant and thermal properties of ortho-cresol novolac (OCN) and biphenyl epoxy blends containing red-phosphorus were investigated. For five types of compounds designed with the volume ratio of OCN and biphenyl epoxy, thermal properties were analysed by TGA or DTC, and flame retardancy effectiveness was estimated through UL-94V test. While the flame retardant and thermal properties were improved with the content of filler and red-phosphorus, the excessive amount of red-phosphorus caused to deteriorate those properties. Using the blends of OCN/biphenyl rather than pure OCN or biphenyl epoxy as a matrix the flame retardancy of composites could be improved by the synergic effects of high thermal resistance of OCN and intumescent property of biphenyl. The flame retardant me chanism of epoxy compound containing red-phosphorus could be thought of the heat-insulating effect of intumescent char-layer formed in the surface of composites.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.506-508
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• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

• Korean Journal of Metals and Materials
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• v.50 no.1
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• pp.78-85
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• 2012

Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.

• Corrosion Science and Technology
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• v.18 no.5
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• pp.212-219
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• 2019

This paper reviews recent approaches to develop composite polymer-containing coatings by plasma electrolytic oxidation (PEO) using various low-molecular fractions of superdispersed polytetrafluoroethylene (SPTFE). The features of the unique approaches to form the composite polymer-containing coating on the surface of MA8 magnesium alloy were summarized. Improvement in the corrosion and tribological behavior of the polymer-containing coating can be attributed to the morphology and insulating properties of the surface layers and solid lubrication effect of the SPTFE particles. Such multifunctional coatings have high corrosion resistance ($R_p=3.0{\times}10^7{\Omega}cm^2$) and low friction coefficient (0.13) under dry wear conditions. The effect of dispersity and ${\xi}$-potential of the nanoscale materials ($ZrO_2$ and $SiO_2$) used as electrolyte components for the plasma electrolytic oxidation on the composition and properties of the coatings was investigated. Improvement in the protective properties of the coatings with the incorporated nanoparticles was explained by the greater thickness of the protective layer, relatively low porosity, and the presence of narrow non-through pores. The impedance modulus measured at low frequency for the zirconia-containing layer (${\mid}Z{\mid}_{f=0.01Hz}=1.8{\times}10^6{\Omega}{\cdot}cm^2$) was more than one order of magnitude higher than that of the PEO-coating formed in the nanoparticles-free electrolyte (${\mid}Z{\mid}_{f=0.01Hz}=5.4{\times}10^4{\Omega}{\cdot}cm^2$).