• Journal of the Korean Society of Clothing and Textiles
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• v.13 no.3 s.31
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• pp.295-303
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• 1989

This study is to measure the thermal resistance of 7 types of Parka of different materials with thermal manikin and to compare their effects on physiological responses & subjective wear sensations. Following are the results obtained from the experiments 1) From the thermal manikin experiment, i) As an outer layer, although not significant, water proof fabric was warmer than water proof-vapor permeable fabric. ii) In case of insulating material, down was better for thermal resistance than polyester wadding of the same thickness. Moreover, as the down was thicker, it had more efficiency in thermal resistance. However, the marginal efficiency of thickness was found to be decreasing. 2) From the male-subject experiments, i) Chest temperature, mean skin temperature & microclimate temperature showed the same results on thermal resistance as those of the thermal manikin experiment. ii) Only during rest periods, there was a significant difference among 5 insulating materials in the sense of microclimate humidity. The almost same conclusion was obtained from the above experiments. Even the outer layer did not significantly affect thermal resistance & subjective wear sensation, insulating materials had a significant influence upon them. But in case of 3.5 cm down, it gave less comfortable than that of the thinner. Therefore the optional one for the best comfort & thermal resistance among 7 combinatins is the outer layer of water proff-vapor permeable & insulating material of 2.1 cm down.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.903-906
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• 2011

The electroplating and electro-less plating methods have been applied for the high density chip interconnect of the Copper Pillar Tin Bump (CPTB) preparation. The CPTB was prepared, which had been electroplated about $100{\mu}m$ pitch of copper layer firstly, and then the Tin layer was deposited on the copper pillar surface to protect the oxidation of it. It was also very important to get uniform thickness of electroplated copper layer, though it was difficult and sensitive. In order to control the thickness distribution, it was examined that the current separating disk of Insulating Gate with a hole in the center was installed between electrodes. The current flows through the center hole of the Insulating Gate in the cylindrical electroplating bath and the other parts were blocked to protect current flowing. The main current flowed through the center hole of the Insulating Gate directly to the opposite electrode of wafer disk. As the results, it was verified that the copper layer was thick in the center part of wafer disk with distribution of thinner to the outer part toward edge.

• Advances in concrete construction
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• v.11 no.1
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• pp.33-43
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• 2021

A new type of composite insulated concrete sandwich wall (ICS-wall), which is composed of a triangle truss steel wire network, an insulating layer, and internal and external concrete layers, is proposed. To study the mechanical properties of this new ICS-wall, tensile, compression, and shearing tests were performed on 22 specimens and tensile strength and corrosion resistance tests on 6 triangle truss joints. The variables in these tests mainly include the insulating plate material, the thickness of the insulating plate, the vertical distance of the triangle truss framework, the triangle truss layout, and the connecting mode between the triangle truss and wall and the material of the triangle truss. Moreover, the failure mode, mechanical properties, and bearing capacity of the wall under tensile, shearing, and compression conditions were analyzed. Research results demonstrate that the concrete and insulating layer of the ICS-wall are pulling out, which is the main failure mode under tensile conditions. The ICS-wall, which uses a graphite polystyrene plate as the insulating layer, shows better tensile properties than the wall with an ordinary polystyrene plate. The tensile strength and bearing capacity of the wall can be improved effectively by strengthening the triangle truss connection and shortening the vertical distances of the triangle truss. The compression capacity of the wall is mainly determined by the compression capacity of concrete, and the bonding strength between the wall and the insulating plate is the main influencing factor of the shearing capacity of the wall. According to the tensile strength and corrosion resistance tests of Austenitic stainless steel, the bearing capacity of the triangle truss does not decrease after corrosion, indicating good corrosion resistance.

• Journal of Powder Materials
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• v.28 no.3
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• pp.233-238
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• 2021

Iron-based amorphous powder attracts increasing attention because of its excellent soft magnetic properties and low iron loss at high frequencies. The development of an insulating layer on the surface of the amorphous soft magnetic powder is important for minimizing the eddy current loss and enhancing the energy efficiency of high-frequency devices by further increasing the electrical resistivity of the cores. In this study, a hybrid insulating coating layer is investigated to compensate for the limitations of monolithic organic or inorganic coating layers. Fe₂O₃ nanoparticles are added to the flexible silicon-based epoxy layer to prevent magnetic dilution; in addition TiO₂ nanoparticles are added to enhance the mechanical durability of the coating layer. In the hybrid coating layer with optimal composition, the decrease in magnetic permeability and saturation magnetization is suppressed.

• Journal of the Korean Society of Safety
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• v.18 no.3
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• pp.69-74
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• 2003

To investigate the partial discharge and electric field distribution in cable joint parts, we measured the partial discharge and electric field in specimen. The specimens which cross-linked polyethylene(XLPE) and ethylene propylene diene ethylene(EPDM) are used to insulating material for underground cable md cable jointing parts. The polymers are used to insulating material in switchgear which is a kind of transformer equipment and in ultra-high voltage cable. Its using is increasing gradually, the electrical insulation properties are not only excellent but also mechanical property is excellent. And because it is possible to be made void of several type in insulator while it is produced, which the electrical field distribution is changed by void, it has a critical influence to insulator performance. The underground cable is connecting by the jointing material, insulating breakdown and the electric ageing which are caused by several mixing impurity and the damage of cable insulator layer, which reduced the life of cable while intermediate joint kit is connected. Therefore, the computer simulation is used to estimating insulator performance, XLPE is used to the insulating material of ultra-high voltage cable and EPDM is used to insulator layer in joint material kit, and which are produced as specimen. And it is analyzed the electric field concentrating distribution and partial discharge by modeling of computer simulation in void and cable joint kit.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.132-132
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• 2011

The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.174-182
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• 2020

The printed electronics field using ink-jet printing technology is in the spotlight as a next-generation technology, especially ink-jet 3D printing, which can simultaneously discharge and precisely control various ink materials, has been actively researched in recent years. In this study, complex structure of an insulating layer and a conductive layer was fabricated with photo-curable silica ink and PVP-added Cu nano ink using ink-jet 3D printing technology. A precise photocured silica insulating layer was designed by optimizing the printing conditions and the rheological properties of the ink, and the resistance of the insulating layer was 2.43 × 10¹³ Ω·cm. On the photo-cured silica insulating layer, a Cu conductive layer was printed by controlling droplet distance. The sintering of the PVP-added nano Cu ink was performed using an IPL flash sintering process, and electrical and mechanical properties were confirmed according to the annealing temperature and applied voltage. Finally, it was confirmed that the resistance of the PVP-added Cu conductive layer was very low as 29 μΩ·cm under 100℃ annealing temperature and 700 V of IPL applied voltage, and the adhesion to the photo-cured silica insulating layer was very good.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.153-157
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• 2006

In this work, the effects of plasma treatment on surface properties of semiconductive silicone rubber were investigated in terms of X-ray photoelectron spectroscopy (XPS) and contact angles, The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths, The results of the chemical analysis showed that C-H bonds were broken due to plasma discharge and Silica-like bonds(SiOx, x=3${\~}$4) increased, It is thought that semiconductive silicone rubber surfaces treated with plasma discharge led to an increase in oxygen-containing functional groups, resulting in improving the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber. However, the oxygen plama for 20 minute produces a damaged oxidized semiconductive silicone rubber layer, which acts as a weak layer producing a decrease in T-peel strength, These results are probably due to the modifications of surface functional groups or polar component of surface free energy of the semiconductive silicone rubber.

• Korean Journal of Metals and Materials
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• v.48 no.1
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• pp.90-100
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• 2010

Micro-conductive patterns were microfabricated on an insulating substrate ($SiO_2$) surface by a selective electroless nickel plating process in order to investigate the formation of seed layers. To fabricate micro-conductive patterns, a thin layer of metal (Cu.Cr) was deposited in the desired micropattern using laser-induced forward transfer (LIFT). and above this layer, a second layer was plated by selective electroless plating. The LIFT process. which was carried out in multi-scan mode, was used to fabricate micro-conductive patterns via electroless nickel plating. This method helps to improve the deposition process for forming seed patterns on the insulating substrate surface and the electrical conductivity of the resulting patterns. This study analyzes the effect of seed pattern formation by LIFT and key parameters in electroless nickel plating during micro-conductive pattern fabrication. The effects of the process variables on the cross-sectional shape and surface quality of the deposited patterns are examined using field emission scanning electron microscopy (FE-SEM) and an optical microscope.

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.421-426
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• 1999

In this paper, we present p-channel GaAs MOSFET having $Al_2O_3$ as gate insulator fabricated on a semi-insulating GaAs substrate, which can be operated in the depletion mode. $1\;{\mu}m$ thick undoped GaAs buffer layer, $4000\;{\AA}$ thick p-type GaAs epi-layer, undoped $500{\AA}$ thick AlAs layer, and $50\;{\AA}$ thick GaAs cap layer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate and this wafer was oxidized. AlAs layer was fully oxidized as a $Al_2O_3$ thin film. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S I GaAs was successful in realizing depletion mode p-channel GaAs MOSFET.