• 전기전자학회논문지
• /
• 제22권2호
• /
• pp.488-490
• /
• 2018

본 연구에서는 급격한 스위칭 특성을 달성하기 위해 싱글단일-게이트 실리콘 채널에서 전하 캐리어의 양의 피드백을 이용하는 새롭게 설계된 피드백 전계 효과 트랜지스터를 제안한다. 에너지 밴드 다이어그램, I-V 특성, 문턱전압 기울기 및 on/off 전류 비는 TCAD 시뮬레이터를 이용하여 분석한다. 피드백 전계 효과 트랜지스터의 중요한 특징 중 하나인 히스테리시스의 특성을 보기 위해 게이트 절연막 물질과 게이트 전극물질을 변경하여 시뮬레이션을 진행했다. 이러한 특성변화는 피드백 전계효과 트랜지스터의 문턱전압 ($V_{TH}$)을 변화시켰고, 메모리 윈도우 폭이 작아지는 현상을 보였다.

• 한국자기학회지
• /
• 제8권1호
• /
• pp.27-33
• /
• 1998

스파터링법으로 Si(001) 기판 위에 증착된 Fe(1000 $\AA$)/Al2O3(t$\AA$)/Co(1000$\AA$) 자기 삼층 접합들의 터널링 자기저항 성질을 연구하였다. 두께 t=50~200$\AA$의 Al2O3층을 반응성 rf 스파터링법으로 바닥 자성층위에 직접 증착하였다. 비교응 위해, Pt/Al2O3/Pt 터널링 접합을 제조하여 상온에서 전류.전압(I.V)특성을 측정한 결과, 확인한 비선형 nonmhic 거동을 나타내었다. 이로부터 반응성 스파터링된 Al2O3가 상온에서도 phnhole이 없는 휼룔한 절연 터널링 장벽을 형성함을 확인할 수 있었다. Fe/Al2O3/Co 자기 터널링 접합즐은 Pt/Al2O3/Pt 접합들에 비해 상당한 접합저항의 열화를 보였으며, 상온에서 대략 0.1%의 터널링 자기저항비를 나타내었다. Fe를 꼭대기 전극으로 하는 전극으로 하는 접합들에 비해, Co을 꼭대기 전극으로 하는 대부분의 자기 터널링 접합들이 보다 안정된 I.V 및 터널링 자기저항 특성을 보였다. 이러한 실험결과들을 자기 터널링 접합들의 계면구조와 관련지어,Pt/Al2O3/Ptwjq합과 비교하여 논의하였다.

• 한국산업보건학회지
• /
• 제26권4호
• /
• pp.454-465
• /
• 2016

Objectives: The purpose of this study was to evaluate trends in asbestos exposure among asbestos-handling industries from 2000 to 2005. Methods: The data included the number of industries and workers exposed, concentrations of asbestos and the amount exceeded, and the type and size of industry by year. These data were collected by 46 regional employment and labor offices in Korea using work environment monitoring reports. A total of 1,481 samples from 284 industries were extracted from the reports and were analyzed with no data modification. Results: The means of asbestos concentration decreased from $0.84f/cm^3$ to $0.03f/cm^3$ during the period 2000-2005. Among the total of 1,481 samples, 11 samples(0.7%) exceeded the KOEL, and 178 samples(12.0%) were ACGIH TLV. The insulating paper product manufacturing industry was found to have the highest level of asbestos, followed by the fireproofing manufacturing industry, brake lining products manufacturing industry, commutator products manufacturing industries, and construction materials manufacturing industry. The number of asbestos handling industries decreased from 48 industries with 1,155 employees to 37 industries during the period of 2000 to 2005, but the number of asbestos workers expanded to the point that 1,182 employees could be found in 2005. Conclusion: Based on these results, the strengthening of the KOEL and new regulations turned out to help reduce asbestos exposure levels. This study recommends that retrospective exposure to asbestos based on various industry types should be assessed.

• 한국재료학회지
• /
• 제18권6호
• /
• pp.318-325
• /
• 2008

Single crystal $ZnIn_2S_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T^2/(T＋489\;K)$. After the as-grown $ZnIn_2S_4$ single crystal thin films were annealed in Zn-, S-, and In-atmospheres, the origin of point defects of $ZnIn_2S_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $ZnIn_2S_4$ single crystal thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2S_4$/GaAs did not form the native defects because In in $ZnIn_2S_4$ single crystal thin films existed in the form of stable bonds.

• 동굴
• /
• 제76호
• /
• pp.37-42
• /
• 2006

The Dielectric Barrier Discharge (DBD) is a nonequilibrium gas discharge that is generated in the space between two electrodes, which are separated by an insulating dielectric layer. The dielectric layer can be put on either of the two electrodes or be inserted in the space between two electrodes. If an AC or pulse high voltage is applied to the electrodes that is operated at applied frequency from 50Hz to several MHz and applied voltages from a few to a few tens of kilovolts rms, the breakdown can occur in working gas, resulting in large numbers of micro-discharges across the gap, the gas discharge is the so called DBD. Compared with most other means for nonequilibrium discharges, the main advantage of the DBD is that active species for chemical reaction can be produced at low temperature and atmospheric pressure without the vacuum set up, it also presents many unique physical and chemical process including light, heat, sound and electricity. This has led to a number of important applications such as ozone synthesizing, UV lamp house, CO2 lasers, et al. In recent years, due to its potential applications in plasma chemistry, semiconductor etching, pollution control, nanometer material and large area flat plasma display panels, DBD has received intensive attention from many researchers and is becoming a hot topic in the field of non-thermal plasma.

• 한국재료학회지
• /
• 제22권11호
• /
• pp.604-608
• /
• 2012

Recently, inorganic-organic hybrid materials have attracted much attention not only for their excellent thermal conductivity but also for their flame retardant properties. In this study, the properties of organic-inorganic hybrid insulating materials using inorganic fillers and polyurethane foam with different foaming conditions have been investigated. The addition of 1.5 wt% water to polyurethane as foaming agent shows the best foaming properties. The pore size was decreased in the foaming body with increasing of the $CaCO_3$ addition. The apparent density and thermal conductivity were increased by increasing the $CaCO_3$ addition. With an increasing amount of $CaCO_3$ powder, the flame retardant property is improved, but the properties of thermal conductivity and apparent density tend to decrease. When the addition of fine particles of $CaCO_3$, the apparent density and thermal conductivity were increased and, also, with the addition of coarse particles over $45{\mu}m$ in size, the apparent density and thermal conductivity were increased as well. In this study, the adding of $CaCO_3$ with average particle size of $27{\mu}m$ led to the lowest thermal conductivity and apparent density. After evaluation with different inorganic fillers, $Mg(OH)_2$ showed the highest thermal conductivity; on the other hand, $CaCO_3$ showed the lowest thermal conductivity.

• 전기학회논문지
• /
• 제65권5호
• /
• pp.738-744
• /
• 2016

Current rating of a power cable can be calculated by the maximum allowable temperature in an insulating material considering the heat transfer from cable conductor. Therefore, it is very important to calculate the current rating using electrical equivalent circuit by calculated cable thermal circuit parameters but, it has not been fully investigated yet. In this paper, in order to determine the current rating of power cable, conventional calculation method has been reviewed considering the conductor resistance, loss factor of sheath, dielectric losses and thermal resistances based on the maximum allowable temperature of 345 kV $2500mm^2$ XLPE cable. To confirm the calculation result of the current rating, the conductor temperature should be examined whether it reaches the maximum allowable temperature by the thermal equivalent circuit of the cable. Then, utilizing EMTP (Electro-Magnetic Transient Program) which is a conventional program for electrical circuit, the thermal equivalent circuit was transformed to an electric equivalent circuit using an analogous relationship between thermal circuit and electrical circuit, and temperature condition including cable conductor, sheath, cable jacket could be calculated by the current rating of 345 kV $2500mm^2$ XLPE cable.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제54권3호
• /
• pp.114-119
• /
• 2005

We investigated compatibilizing effects of electrical properties such as charge distributions and electrical breakdown in blends of low density polyethylene (LDPE) / polystyrene (PS) with poly [styrene-b-(ethylene-co-butylene)-b-styrene] (SEBS), the triblock copolymer. The blends with $70\;wt\%$ of LDPE and $30\;wt\%$ of PS were prepared through a melt blending in a batch type kneader at a temperature of $220^{\circ}C$ when the SEBS content increased up to $10\;wt\%$. Scanning electron microscopy (SEM) was investigated for observation of morphology of LDPE / PS blends increasing SEBS contents. The morphological observation showed that addition of SEBS results in the domain size reduction of the dispersed PS phase and a better interfacial adhesion between LDPE and PS phases. Measurements of space charge distributions for blends was carried out with pulsed electroacoustic (PEA) method. It was possible to observe that the amount of charge storage in the LDPE / PS blends decreased wiか increasing of SEBS content. The location of SEBS at a domain interface enables charges to move from one phase to the other via domain interface and results in a indicative decrease in the amount of space charge for the LDPE / PS blends with SEBS. Electrical breakdown strength of these blends was observed. It was found that the maximum breakdown strength of the blend was 51.55 kV/mm. These results were better than 38.38 kV/mm of LDPE used electrical insulator for cables and were caused by crystalinity of blends. Because the crystalinity of blends were lower than LDPE, electrical breakdown strength of LDPE / PS blends is higher than that of LDPE. We evaluated the possibility of these blends for insulating material substituted LDPE.

• 한국안전학회지
• /
• 제26권3호
• /
• pp.15-22
• /
• 2011

Explosion and fire cause about 30 reported industrial major accidents a year by ignition source which discharge of electrostatic generated to flammable gas, vapor, dust and mixtures. It brings economically and humanly very large loss that accident was caused by fire and explosion from electrostatic discharge. Thus, it is very important that electrostatic discharge energy is to be control below not to be igniting flammable mixtures. There are two kinds of analysis model for electrostatic discharge, human body model and machine model. Human body model is available the parameter of human's electrical equivalent that capacitance is 100 pF, resistance is $1.5k{\Omega}$. To simulate and visualize the electrostatic discharge from human body need a very expensive and high voltage simulator. In this paper, we measured the value of capacitance and resistance concerned with test materials and sizing of specimen and the value of charged voltage concerned with test specimen and distance to develop an electrostatic charge/discharge simulating tool for teaching with which concerned industrial employee and students. The result of experiments, we conformed that the minimum ignition energy of methane-oxygen mixtures meets well the equation $W=1/2CV^2$, and found out that the insulating material and sizing of equivalent value having human body mode are the poly ethylene of 200 mm and 300 mm of diameter. Developed electrostatic charge/discharge simulating tool has many merits; simple mechanism, low cost, no need of electric power and so on.

• 대한금속재료학회지
• /
• 제50권1호
• /
• pp.78-85
• /
• 2012

Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.