• Journal of the Korea Institute of Military Science and Technology
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• v.19 no.4
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• pp.469-475
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• 2016

Thermal batteries are primary reserve power sources, which are activated upon the melting of eutectic electrolytes by the ignition of heat sources. Therefore, sufficient thermal insulation is absolutely needed for the stable operation of thermal batteries. Currently, excessive amount of heat sources is being used to compensate the heat loss in the cell stack along with the insertion of metal plates and thermal insulators to reserve heat at the both ends of cell stack. However, there is a possibility that the excessive heat flows into the cell stack, causing a thermal runaway at the early stage of discharge. At the same time, the internal temperature of thermal batteries cannot be maintained above the battery operating temperature at the later stage of discharge because of the insufficient insulation. Therefore, the effects of Phase Changing Material(PCM) plates were demonstrated in this study, which can replace the metal and insulating plates, to improve the thermal insulation performance and safety of thermal batteries.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.616-619
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• 2012

Oxides possess several interesting properties, such as ferroelectricity, magnetism, superconductivity, and multiferroic behavior, which can effectively be used oxide electronics based on epitaxially grown heterostructures. The microscopic properties of oxide interfaces may have a strong impact on the electrical transport properties of these heterostructures. It was recently demonstrated that high electrical conductivity and mobility can be achieved in the system of an ultrathin $LaAlO_3$ film deposited on a $TiO_2$-terminated $SrTiO_3$ substrate, which was a remarkable result because the conducting layer was at the interface between two insulators. In this study, we observe that the current-voltage characteristics exhibit $LaAlO_3$ thickness dependence of electrical conductivity in $TiO_2$-terminated $SrTiO_3$. We find that the $LaAlO_3$ layers with a thickness of up 3 unit cells, result in highly insulating interfaces, whereas those with thickness of 4 unit cells and above result in conducting interfaces.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.3
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• pp.1-6
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• 2013

This study has focused on transparency recovering of the polycarbonate by polishing its surface for recycling. The polycarbonate has many properties such as excellent mechanical strength, electrical insulating, superior heat resistance to other plastic material and especially good transparency. It has been used as barrier for the traffic noise at the roadside and the greenhouse for the palm house. But the polycarbonate has changed slightly as time goes by 10 years because of exposure to the strong sunlight and oxidization in the atmosphere, as result has lost its transparency. Magnetic assisted polishing has been utilized as an effective polishing method to recover the transparency of polycarbonate. The polycarbonate which has been used for 10 years was adopted as the sample. The first surface roughness of the sample was 1$1.23{\mu}mRa$, $7.5{\mu}mRz(DIN)$ respectively. In the experimental results, it showed that the surface roughness of the polished sample improved $0.013{\mu}mRa$, $0.08{\mu}mRz(DIN)$ from the first surface roughness respectively. The surface roughness get almost back again by magnetic assisted polishing. These results also showed that the magnetic assisted polishing was efficient machining method to reuse the polycarbonate material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.60-66
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• 2001

Because of internal voids in insulators give rise to partial discharge(PD), which cause local breakdown and even entire insulation breakdown. Treeing due to PD is one of the main causes of breakdown of the insulating materials and reduction of the insulation life. Therefore the necessity for establishing a method to diagnose the aging of insulation materials and to predict the breakdown of insulation has become important. From this viewpoint, our studies diagnose insulation degradation using the method of computer sensing system, which has the advantages of PD and acoustic emission(AE) sensing system. To use advantages of these two methods can be used effectively to search for treeing location and PD in some materials. In analysis method of degradation, We analyzed the PD pulse and AE pulses by regression analysis, compared to these obtained the correlation coefficient and determination coefficient by T-distribution and saw that PD and AE pulses show a similar pattern on the whole. This is in agreement with the results of the research by Yoshimura and Fujita.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.129-130
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• 2006

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cd}$, $V_s$, $Cd_{int}$, and $S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment m the S-atmosphere converted $CdIn_2S_4$ single crystal thin films to an optical p-type. Also. we confirmed that In in $CdIn_2S_4$/GaAs did not form the native defects because In in $CdIn_2S_4$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.125-126
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• 2006

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$. $345cm^2/V{\cdot}s$ at 293 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ},X$) having very strong peak intensity. Then. the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule. an activation energy of impurity was 137 meV.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.10
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• pp.5176-5183
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• 2013

In general, Korean Lightweight Concrete used Heat insulating material for building and filler for civil construction, backfill material for tunnel, office floor fillers, lightweight blocks and so on. These expand the range of use ALC(autoclaved lightweight concrete) on the soft-ground at regular intervals during road construction by installing piles used as substrates for the process is under study. In this study, behavior characteristics on the soft-ground of pavement analysis was used to test the geo-Centrifuge. Prototype pavement reduced to 1/30 slab form of the composition as kaolinite model tests were conducted in the soft ground. Pile Arrangement (having 36 component pile with an array of $3{\times}12$) was used to group of piles. Tests of gravity 30 level the centrifugal force acting Light-weight pavement models. Based on the Prototype pavement of the behavior characteristics of pavement behavior characteristics were estimated. FMA analysis of the 10 times as big 39.4kg (actual load 35 ton) of the lateral load is applied to the case 7.8mm (actual behavior 23.4mm) behavior was fine.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.266-272
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• 2002

The stochiometric mixture of evaporating materials for the ZnIn$_2$S$_4$ single crystal thin film was prepared from horizontal furnace. To obtain the ZnIn$_2$S$_4$ single crystal thin film, ZnIn$_2$S$_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610 $^{\circ}C$ and 450 $^{\circ}C$, respectively and the growth rate of the ZnIn$_2$S$_4$ single crystal thin film was about 0.5 $\mu\textrm{m}$/hr. The crystalline structure of ZnIn$_2$S$_4$ single crystal thin film was investigated by photo1uminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of ZnIn$_2$S$_4$ single crystal thin film measured from Hall effect by van der Pauw method are 8.51${\times}$10$\^$17/ cm$\^$-3/, 291 $\textrm{cm}^2$/V$.$s at 293 $^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the ZnIn$_2$S$_4$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 0.0148 eV and 0.1678 eV at 10 $^{\circ}$K, respectively. From the photoluminescence measurement of ZnIn$_2$S$_4$ single crystal thin film, we observed free excition (E$\_$X/) typically observed only in high quality crystal and neutral donor bound exciton (D$^{\circ}$,X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively. The activation energy of impurity measured by Haynes rule was 130 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.636-639
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• 2004

This paper presents the fabrication and performance evaluation of zinc oxide varistors for the arresters used for station system. ZnO varistors were fabricated with typical ceramic production methods and the structural and electrical characteristics were investigated. All varistors exhibited high density, which were in the range of $5.41{\sim}5.49g/cm^3$. In the electrical properties the reference voltage increased in the range of $4.410{\sim}5.250kV$ with increasing their thickness and the residual voltage exhibited the same trends as the reference voltage. In the long duration current impulse withstand test, E-2 and F-1 samples failed in the two and four shots, respectively, but E-1 and F-2 samples survived 18 shots during the test. Before and after this test, the variation ratio of residual voltage of E-1 and F-2 samples were -0.34% and 0.05%, respectively, which were in the acceptance range of 5%. According to the results of tests, it is thought that if the fabrication process such as insulating coating, sintering condition, and soldering method is improved, these ZnO varistors would be possible to apply to the station class arresters in the new future.