• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.79-82
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• 2003

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with $SiO_2$ and $Al_2O_3$ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with $Al_2O_3$ insulator had good thermal conductivity and reliability.

• Journal of Power Electronics
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• v.16 no.2
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• pp.778-785
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• 2016

An excess carrier lifetime extraction method is derived for physics-based insulated gate bipolar transistor (IGBT) models with consideration of the latest development in IGBT modeling. On the basis of the 2D mixed-mode Sentaurus simulation, the clamp turn-off test is simulated to obtain the tail current. The proposed excess carrier lifetime extraction method is then performed using the simulated data. The comparison between the extracted results and actual lifetime directly obtained from the numerical device model precisely demonstrates the accuracy of the proposed method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.374-377
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• 2003

In this paper, turn on characteristics of (Punch-Through Insulated Gate Bipolar Transistor) PT-IGBT has been studied. Based on the transient power loss, turn on charges first base to collector capacitance. Furthermore we present the charge variation in the base including n+ buffer layer to express the transient turn-on characteristics of the device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.30-31
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• 2008

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability. In this paper, thermal distribution of the Non Punchthroug(NPT) Insulated Gate Bipolar Transistor with heatsink areas has been studied. For analysis of thermal distribution, we obtained results by using finite element simulator, ANSYS and compared with experimental data by thermocam.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.163-166
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• 2003

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with $SiO_2\;and\;Al_2O_3$ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with $Al_2O_3$ insulator had good thermal conductivity and reliability

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.147-148
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• 2005

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability and efficient heat-sink design. In this paper, thermal distribution of the Insulated Gate Bipolar Transistor Module has been studied with different conditions and heat sink materials. For analysis of thermal distribution, we obtained results by using finite element simulator, Ansys.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.172-173
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• 2007

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The thermal analysis provides valuable information on the semiconductor rating, long-term reliability. In this paper, thermal distribution of the Non Punchthrough(NPT) Insulated Gate Bipolar Transistor has been studied. For analysis of thermal distribution, we obtained experimental and simulation results by using finite element simulator, Ansys and by using photographic infrared thermometer, we compared experimental date with simulation result. and got good agreement. Also this paper provided thermal distribution of IGBT connected to heat sinks. and this results will be good information to design optimal heat sink for IGBT.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.2
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• pp.810-818
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• 2021

A leakage current of ESS is classified mainly by the occurrence from a PCS(Power Conditioning System) section and an unbalanced grid current. The reason for the leakage current from the PCS section is a voltage change by IGBT (Insulated Gate Bipolar Transistor) switching and stray capacitance between the IGBT and heatsink. The leakage current caused by the grid unbalanced current flows to the ESS through the neutral line of grid-connected transformer for the ESS with a three limb iron type of Yg-wire connection. This paper proposes a mechanism for the occurrence of leakage current caused by stray capacitance, which is calculated using the heatsink formula, from the aspect of the PCS section and grid unbalance current. Based on the proposed mechanisms, this study presents the modeling of the leakage current occurrence using PSCAD/EMTDC S/W and evaluates the characteristics of leakage currents from the PCS section and grid unbalanced current. From the simulation result, the leakage current has a large influence on the battery side by confirming that the leakage current from the PCS is increased from 7[mA] to 34[mA], and the leakage current from an unbalanced load to battery housing is increased from 3.96[mA] to 10.76[mA] according to the resistance of the housings and the magnitude of the ground resistance.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.10
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• pp.1467-1472
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• 2014

This paper study on powering characteristic on speed variation of propulsion system of prototype 8200 electric locomotive propulsion system through simulation modeling. For this purpose, it being applied in the field of railway IGBT (Insulated Gate Bipolar Transistor) elements are used. Converter was performed PLL (Phase-Locked Loop) control method that is used to control the phase and output voltage, and the inverter was carried an indirect vector control method to control the speed of traction motor. The results of simulation by modeling and experimental unit, we was confirmed that converter is controlled a unity power factor and output voltage by reference voltage. Also traction motor was controlled by indirect vector control and SVPWM inverter switching method very well.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1471-1481
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• 2014

This paper presents the new power dissipation model of individual switching device in a high-level modular multilevel converter (MMC), which can be mostly used in voltage sourced converter (VSC) based high-voltage direct current (HVDC) system and flexible AC transmission system (FACTS). Also, the voltage balancing method based on sorting algorithm is newly proposed to advance the MMC functionalities by effectively adjusting switching variations of the sub-module (SM). The proposed power dissipation model does not fully calculate the average power dissipation for numerous switching devices in an arm module. Instead, it estimates the power dissipation of every switching element based on the inherent operational principle of SM in MMC. In other words, the power dissipation is computed in every single switching event by using the polynomial curve fitting model with minimum computational efforts and high accuracy, which are required to manage the large number of SMs. After estimating the value of power dissipation, the thermal condition of every switching element is considered in the case of external disturbance. Then, the arm modeling for high-level MMC and its control scheme is implemented with the electromagnetic transient simulation program. Finally, the case study for applying to the MMC based HVDC system is carried out to select the appropriate insulated-gate bipolar transistor (IGBT) module in a steady-state, as well as to estimate the proper thermal condition of every switching element in a transient state.