• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.639-640
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• 2006

We investigated fault current limitation characteristics of the resistive superconducting fault current limiter(SFCL) which consisted of a Bi-2212 bulk coil and a shunt coil. The Bi-2212 bulk coil and the shunt coil were connected in parallel. The Bi-2212 bulk coil was placed inside the shunt coil to induce field-assisted quench. The fault test was conducted at an input voltage of 200 $V_{rms}$ and fault current of 12 $kA_{rms}$ and 25 $kA_{rms}$. The fault conditions were asymmetric and symmetric, and the fault period was 5 cycles. The test results show that the SFCL successfully limited the fault current of 12 $kA_{rms}$ and 25 $kA_{rms}$ to below $5.5{\sim}6.9kA_{peak}$ within $0.64{\sim}2.17$ msec after the fault occurred. Limitation was faster under symmetric fault test condition due to the larger change rate of current. We concluded that the speed of fault current limitation was determined by the speed of current rise rather than the amplitude of a short circuit current. These results show that the Bi-2212 bulk coil is suitable for distribution-class SFCLs.

• Journal of Power Electronics
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• v.17 no.3
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• pp.821-834
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• 2017

This paper reports on a single-inductor multiple-output step-up converter with digital control. A systematic analog-to-digital-controller design is explained. The number of digital blocks in the feedback path of the proposed converter has been decreased. The simpler digital pulse-width modulation (DPWM) architecture is then utilized to reduce the power consumption. This architecture has several advantages because counters and a complex digital design are not required. An initially designed unit-delay cell is adopted recursively for the construction of coarse, intermediate, and fine delay blocks. A digital limiter is then designed to allow only useful code for the DPWM. The input voltage is 1.8 V, whereas output voltages are 2 V and 2.2 V. A co-simulation was also conducted utilizing PowerSim and Matlab/Simulink, whereby the 55 nm process was employed in the experimental results to evaluate the performance of the architecture.

• The Journal of Korean Institute of Information Technology
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• v.16 no.12
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• pp.101-107
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• 2018

In wireless sensor network technology, which has been applied to various fields, the power supply and the power management of sensors are the most important issues. For this reason, a new concept of power supply and power management device is required. In this paper, we developed an autonomous independent power supply system that supplies the stable power to a sensor node without an additional external input by applying the energy harvesting technology using the electromagnetic induction principle by utilizing the current flowing in the transmission line. The proposed autonomous independent power supply system consists of a power supply using Power CT and a power management system including a charging circuit. The power management device uses a voltage limiter circuit and a monitoring circuit of charging voltage and current to ensure the safety of charging of the battery. In order to verify the performance of the proposed system, we applied it to the SVL diagnostic system and confirmed that it operates stably.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.6
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• pp.149-154
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• 2022

Due to high power capabilities and high linearity of GaN devices, GaN Low-Noise Amplifiers (LNAs) without a limiter can be implemented in order to improve noise figure and reduce chip area in radar receivers. In this paper, a GaN LNA is presented for Ka-band radar receivers. The designed LNA was realized in a 150-nm GaN HEMT process and measurement results show that the voltage gain of >23 dB and the noise figure of <6.5 dB including packaging loss in the target frequency range. Under the high-power stress test, measured gain and noise figure of the GaN LNA is degraded after the first stress test, but no more degradation is observed under multiple stress tests. Through post-stress noise and s-parameter measurements, we verified that the GaN LNA is resilient to pulsed input power of ~40 dBm.