• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.251-251
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• 2010

Organic-inorganic hybrid materials have attracted because of its combined properties, such as flexibility and high electrical performance. In addition, the hybrid materials are expected to have synergic effect which are not shown in just one component. Here, we fabricated organic-inorganic hybrid thin film. Organic-inorganic hybrid thin film have been deposited from diethyl zinc and 1, 2, 4-trihydroxybenzene (THB) by molecular layer deposition (MLD). UV-VIS, Using Infrared spectrum and X-ray photoelectron spectroscopy confirm that Zinc and THB hybrid film (ZnTHB) consist of Zn-O and THB - oxide units and the micro structure and composition of hybrid film. hat the sequential surface reactions of diethyl zinc and ethylene glycol are sufficiently self-limiting and saturating to enable well-controlled MLD growth. Transmission electron microscopy image shows lamination growth of ZnTHB film according to cycle.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.395-395
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• 2012

We fabricate organic-inorganic hybrid thin film for the purpose of encapsulation by molecular layer deposition (MLD) using Trimethylaluminium (TMA) and Adipoyl Chloride (AC). Ellipsometry was employed to verify self limiting reaction of ALD. Linear relationship between number of cycle and thickness was obtained. We found that desirable organic thin film fabrication is possible by MLD surface reaction in nanoscale. Purging was carried out after dosing of each precursor to form monolayer in each sequence. We also confirmed roughness of the organic thin film by atomic force microscopy. We deposit TMA and AC at $70^{\circ}C$ and that 1.78A root mean square was obtained which indicates that uniform organic thin film was formed. We confirmed precursor's functional group by IR spectrum. We calculated WVTR of organic-inorganic hybrid super-lattice epitaxial layer using Ca test. WVTR indicates superlattice film can be possibly use as encapsulation in flexible devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.274-274
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• 2013

We fabricate encapsulation-layer of OLED panel from organic-inorganic hybrid thin film by atomic layer deposition (ALD) molecular layer deposition (MLD) using Al2O3 as ALD process and Adipoyl Chloride (AC) and 1,4-Butanediamine as MLD process. Ellipsometry was employed to verify self-limiting reaction of MLD. Linear relationship between number of cycle and thickness was obtained. By such investigation, we found that desirable organic thin film fabrication is possible by MLD surface reaction in monolayer scale. Purging was carried out after dosing of each precursor to eliminate physically adsorbed precursor with surface. We also confirmed roughness of the organic thin film by atomic force microscopy (AFM). We deposit AC and 1,4-Butanediamine at $70^{\circ}C$ and investigated surface roughness as a function of increasing thickness of organic thin film. We confirmed precursor's functional group by IR spectrum. We calculated WVTR of organic-inorganic hybrid super-lattice epitaxial layer using Ca test. WVTR indicates super-lattice film can be possibly use as encapsulation in flexible devices.

• Bulletin of the Korean Chemical Society
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• v.28 no.6
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• pp.1015-1020
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• 2007

A simple approach to prepare arrays of Au/TiO2 composite nanoparticles by using Au-loaded block copolymers as templates combined with a sol-gel process is described. The organic-inorganic hybrid films with closely packed inorganic nanodomains in organic matrix are produced by spin coating the mixtures of polystyrene-block-poly(ethylene oxide) (PS-b-PEO)/HAuCl4 solution and sol-gel precursor solution. After removal of the organic matrix with deep UV irradiation, arrays of Au/TiO2 composite nanoparticles with different compositions or particle sizes can be easily produced. Different photoluminescence (PL) emission spectra from an organic-inorganic hybrid film and arrays of Au/TiO2 composite nanoparticles indicate that TiO2 and Au components exist as separate state in the initial hybrid film and form composite nanoparticles after the removal of the block copolymer matrix.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.209-219
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• 2018

Colloidally stable organic-inorganic (O-I) hybrid nanoparticles could be prepared using an alkoxysilanefunctionalized amphiphilic polymer (AFAP) precursor. O-I hybrid sols could maintain colloidal stability for six months even at 45% solid content and be coated onto glass as well as PET film to form transparent O-I hybrid films. The formation of O-I hybrid nanoparticles dispersed in cured coating films could be confirmed using scanning electron microscopy. The cured coating film showed 3H and 5H pencil hardness on PET and glass, respectively. Nanoindentation measurements also showed that their modulus and hardness was varied with the type of AFAP used in its preparation.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1115-1118
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• 2006

Using a thermally-crosslinkable organosiloxane-based organic-inorganic hybrid material, solution processable gate dielectric layer for organic thin-film transistors (OTFTs) have been fabricated. The hybrid dielectrics are synthesized by the sol-gel process, followed by the heat-treatment at $190{\bullet}\;.{\bullet}$ To investigate the electrical property of hybrid dielectric, leakage current behavior and capacitance were measured. To fabricate coplanar-type OTFTs, Au/Cr electrode was deposited onto the heavily doped silicon substrate with the organic-inorganic hybrid dielectric layer and then ${\alpha},{\omega}-dihexylquaterthiophene$ was drop-cast between source and drain electrical performance of the fabricated transistor.

• Korean Journal of Materials Research
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• v.34 no.9
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• pp.439-447
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• 2024

Organic-inorganic hybrid coating films have been used to increase the transmittance and enhance the physical properties of plastic substrates. Sol-gel organic-inorganic thin films were fabricated on polymethylmethacrylate (PMMA) substrates using a dip coater. Metal alkoxide precursor tetraethylsilicate (TEOS) and alkoxy silanes including decyltrimethoxysilane (DTMS), 3-glycidoxypropyltrimethoxysilane (GPTMS), phenyltrimethoxysilane (PTMS), 3-(trimethoxysilyl)propyl methacrylate (TMSPM) and vinyltrimethoxysilane (VTMS) were used to synthesize sol-gel hybrid coating solutions. Sol-gel synthesis was confirmed by the results of FT-IR. Cross-linking of the Si-O-Si network during synthesis of the sol-gel reaction was confirmed. The effects of each alkoxy silane on the coating film properties were investigated. All of the organic-inorganic hybrid coatings showed improved transmittance of over 90 %. The surface hardness of all coating films on the PMMA substrate was measured to be 4H or higher and the average thickness of the coating films was measured to be about 500 nm. Notably, the TEOS/DTMS coating film showed excellent hydrophobic properties, of about 97°.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.75.1-75.1
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• 2013

Atomic layer deposition (ALD) and molecular layer deposition (MLD) are based on sequential, self-limiting surface reactions that produce atomic layer controlled and conformal thin film growth. ALD can deposit inorganic films and MLD can deposit films containing organics. ALD and MLD can be used together to fabricate a wide range of hybrid organic-inorganic alloy films. The relative fraction of inorganic and organic constituents can be defined by controlling the ratio of the ALD and MLD reaction cycles used to grow the film. These hybrid films can be tuned to obtain desirable mechanical, electrical and optical properties. This talk will focus on the growth and properties of metal alkoxide films grown using metal precursors and various organic alcohols that are known as "metalcones". The talk will highlight the tunable mechanical properties of alucone alloys grown using Al2O3 ALD and alucone MLD and the tunable electrical conductivity of zincone alloys grown using ZnO ALD and zincone MLD with DEZ and hydroquinone as the reactants.

• Journal of the Korean Applied Science and Technology
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• v.28 no.2
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• pp.240-246
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• 2011

UV-Curable hybrid coatings were synthesized to improve the surface properties of plastic film. Organic-inorganic coating solutions were prepared by the sol-gel method using urethane-acrylate oligomer, acrylate monomer, photo initiator and tetraethoxysilane (TEOS). Methacryloyloxypropyltrimethoxysilane(MPTMS) was used as a silane coupling agent to improve chemical interaction between inorganic phases and UV curable acrylate. In this study, the surface hardness and adhesive properties were improved with the use of inorganic component. The experimental results showed that UV-Curable hybrid films containing aliphatic urethane oligomer, hexanedioldiacrylate, trimethylolpropanetriacrylate, hydroxy dimethyl acetophenone exhibited good surface properties. Also, the optimum curing conditions were investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1009-1013
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• 2009

In this study, we have been synthesized the dielectric layer using pure organic and organic-inorganic hybrid precursor on flexible substrate for improving of the organic thin film transistors (OTFTs) and, design and fabrication of organic thin-film transistors (OTFTs) using small-molecule organic semiconductors with pentacene as the active layer with record device performance. In this work OTFT test structures fabricated on polymerized substrates were utilized to provide a convenient substrate, gate contact, and gate insulator for the processing and characterization of organic materials and their transistors. By an adhesion development between gate metal and PI substrate, a PI film was treated using $O_2$ and $N_2$ gas. The best peel strength of PI film is 109.07 gf/mm. Also, we have studied the electric characteristics of pentacene field-effect transistors with the polymer gate-dielectrics such as cyclohexane and hybrid (cyclohexane+TEOS). The transistors with cyclohexane gate-dielectric has higher field-effect mobility, $\mu_{FET}=0.84\;cm^2/v_s$, and smaller threshold voltage, $V_T=-6.8\;V$, compared with the transistor with hybrid gate-dielectric.