• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.351-360
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• 1999

A large NaX type zeolite crystal of a uniform particle size of 20${\mu}{\textrm}{m}$ are grown with various H2O content by hydrothermal reaction and added seed crystal (2~3 ${\mu}{\textrm}{m}$) to reactant solution as a function of different adding seed levels from 3 to 15 %. The result that increased purity of NaX zeolite above 95% and homogeneity of crystal size by increasing adding seed levels, also decreased crystallization time. It was explained that adding seed to synthesis solution leaded out increase of surface area of physical contact reaction and directed growth of seed crystal, so more rapid consumption of reaction gel as increase seeding levels.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1115-1118
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• 2006

Using a thermally-crosslinkable organosiloxane-based organic-inorganic hybrid material, solution processable gate dielectric layer for organic thin-film transistors (OTFTs) have been fabricated. The hybrid dielectrics are synthesized by the sol-gel process, followed by the heat-treatment at $190{\bullet}\;.{\bullet}$ To investigate the electrical property of hybrid dielectric, leakage current behavior and capacitance were measured. To fabricate coplanar-type OTFTs, Au/Cr electrode was deposited onto the heavily doped silicon substrate with the organic-inorganic hybrid dielectric layer and then ${\alpha},{\omega}-dihexylquaterthiophene$ was drop-cast between source and drain electrical performance of the fabricated transistor.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.64.1-64.1
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• 2012

Next generation displays such as high performance LCD, AMOLED, flexible display and transparent display require specific TFT back-planes. For high performance TFT back-planes, low temperature poly silicon (LTPS), and metal-oxide semiconductors are studied. Flexible TFT backplanes require low temperature processible organic semiconductors. Not only development of active semiconducting materials but also design and synthesis of semiconductor corresponding gate dielectric materials are important issues in those display back-planes. In this study, we investigate the high heat resistant polymeric gate dielectric materials for organic TFT and inorganic TFT with good insulating properties and processing chemical resistance. We also controlled and optimized surface energy and morphology of gate dielectric layers for direct printing process with solution processible organic and inorganic semiconductors.

• Korean Journal of Materials Research
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• v.7 no.7
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• pp.604-607
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• 1997

SiO$_{2}$를 첨가한 Cr$_{2}$O$_{3}$의 전기전도도와 미세구조를 산소분압, 온도, 그리고 SiO$_{2}$첨가량에 따라 측정하였다. 입자직경은 1$\mu\textrm{m}$보다 작다. 순수한 Cr$_{2}$O$_{3}$의 전기전도도는 산소분압과 온도가 증가함에 따라 증가하였으며 110$0^{\circ}C$부터 진성 영역이 나타났다. Cr$_{2}$O$_{3}$의 전기전도도는 SiO$_{2}$첨가로 감소하지만, 산소분압에 따른 변화는 SiO$_{2}$첨가와 무관하다.

• Korean Journal of Materials Research
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• v.6 no.4
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• pp.349-356
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• 1996

완화형 강유전체의 가장 대표적인 PMN계에서 첨가제의 종류와 함량, 측정온도, 인가 전계의형태 등의 변화에 따른 전계인가 변화특성을 광법위하게 조사하였다. Columbite precursor법에의해 분말을 준비하고 고상소결방법에 의하여 모든 시편을 제조하였다. 순수한 PMN에 첨가제로서 PbTiO3와 Pb(Zr, Ti)O3를 첨가한 경우에 완전한 perovskite 구조의 고용체가 형성되었음을 알 수 있었다. T$\varepsilon$max이상에서는 변위의 이력이 크게 발생하는 강유전체의 거동을 보여주었다. 양방향으로 전계를 인가하여 변위를 이용하면 발생 strain은 실온 근방에서 온도에 대하여 안정적이지만 단방향 전계에 따른 변위는 온도에 따라 크기가 변한다는 것을 알 수 있었고 유전상수가 큰 경우가 전왜의 크기 또한 큰 것을 알 수 있었다. 0.9MN-0.1PT와 0.8PMN-0.2PZT의 경우 최대가 되는 온도는 유전율이 최대가 되는 온도보다 더 낮은 온도에서 나타났다.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.178.1-178
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• 2002

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.112.1-112
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.120.1-120
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• 2003

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.460-465
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• 2013

Plate-shaped inorganic particles are coated onto a stainless steel substrate by the electrophoretic deposition of a precursor slurry which includes the inorganic particles of $Al_2O_3$ and polymer resin in mixed solvents to mimic the abalone shell structure, which is a composite of plate-shaped inorganic particles and organic interlayer binding materials with a layered orientation. The process parameters of the electrophoretic deposition include the voltage, coating time, and conductivity of the substrate. In addition, the suspension parameters are the particle size, concentration, viscosity, conductivity, and stability. We prepared an organic-inorganic composite coating with a high inorganic solid content by arraying the plate-shaped $Al_2O_3$ particles and electrophoretic resin via an electrophoretic deposition method. We analyzed the effect of the slurry composition and the electrophoretic deposition process parameters on the physical, mechanical and thermal properties of the coating layer, i.e., the thickness, density, particle orientation, Young's modulus and thermogravimetric analysis results.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.36-37
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• 2002