• 한국토양비료학회지
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• 제31권4호
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• pp.350-358
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• 1998

시설재배 토양의 염류집적 방지를 위한 적정 시비량 추천방안을 구명하기 위하여 1997년도에 영동군, 보은군, 청원군, 및 청주시의 시설재배지로부터 염류농도가 다양한 18개 토양을 채취하여 폿트 시험으로 무비구와 시비구로 구분하여 토마토의 생산성과 비료효과를 조사하였다. 무비구의 토마토 건물중 및 질소, 인산, 칼륨 흡수량을 비옥도 요인으로 그리고 이들의 시비구와 무비구의 차이 값을 비료 전체효과 및 비료 질소, 인산, 칼륨효과로 고려하였다. 비옥도 및 비료효과 요인들은 토양 화학성들의 상호관계를 분석하여 시설재배지 토마토의 시비기준을 설정하기 위한 평가방법을 검토하였다. 비옥도 요인들에 대한 무기태 질소($NO_3-N$, $NH_4-N$) 함량의 표준화 편회귀계수는 247~1159의 범위를 보여 다른 화학성들의 0.02~4.02에 비하여 수백배의 높은 가중치를 보였다. 또한 무기태 질소($NO_3-N$, $NH_4-N$) 함량은 전기전도도에 대한 표준화 편회귀계수가 35.2-36.0으로 다른 화학성들의 1.0이하에 비하여 수십배의 높은 가중치를 나타냈다. 이러한 결과로부터 무기태 질소함량은 시설재배 토양의 비옥도와 전도도에 가장 크게 영향을 미치는 지표로 확인되었다. Cate-Nelson split 평가방법에 의한 토마토 최대 생산력과 비료효과 0가 되는 무기태 질소($NO_3-N+NH_4-N$) 함량은 $220mg\;kg^{-1}$으로 배추의 경우와 동일하게 추정되었다. 따라서 시설재배지 토양의 무기태 질소($NO_3-N$, $NH_4-N$) 함량이 $220mg\;kg^{-1}$ 이상인 토양은 무비 재배로 추천하고, 기준치 이하인 토양은 비료효과와 무기태질소 함량의 회귀식을 이용하여 시비기준의 추천이 가능하다.

• 한국표면공학회지
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• 제45권1호
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• pp.20-24
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• 2012

Multilayer passivation film on OLED with organic/inorganic hybrid structure as to diminish the thermal stress and expansion was researched to protect device from the direct damage of $O_2$ and $H_2O$ and improve life time characteristics. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The films consist of ITO(150 nm)/ELM200_HIL(50 nm)/ELM002_HTL(30 nm)/$Alq_3$: 1 vol.% Rubrene(30 nm)/$Alq_3$(30 nm) and LiF(0.7 nm)/Al(100 nm) which were formed in that order. Using LiF/$SiN_x$ as a buffer layer was determined because it significantly improved life time characteristics without suffering damage in the process of forming passivation film. Multilayer passivation film on buffer layer didn't produce much change in current efficiency, while the half life time at 1,000 $cd/m^2$ of OLED/LiF/$SiN_x$/E1/$SiN_x$ was 710 hours which showed about 1.5 times longer than OLED/LiF/$SiN_x$/E1 with 498 hours. futhermore, OLED/LiF/$SiN_x$/E1/$SiN_x$/E1/$SiN_x$ with 1301 hours showed about twice than OLED/LiF/$SiN_x$/E1/$SiN_x$ which demonstrated that superior characteristics of life time was obtained in multilayer passivation film. Through the above result, it was suggested using LiF/$SiN_x$ as a buffer layer could reduce the damage from the difference of thermal expansion coefficient in OLED with protective films, and epoxy layer in multilayer passivation film could function like a buffer between $SiN_x$ inorganic layers with relatively large thermal stress.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1185-1188
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• 2006

Pentacene thin film transistors (OTFTs) on flexible polyimide substrate using electroplated gate electrode and organic/high-k inorganic bilayer gate dielectric layer. Incorporation of thin atomic-layer deposited $HfO_2$ layer on the PVP organic gate dielectric layer reduced the gate leakage and as a result enhanced the current on/off ratio.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.465-465
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• 2012

In this study, we developed an Al2O3 nanolaminated single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nanocrystal phase with various grain sizes and lead to the formation of a nanolaminated structure in the single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the nanolaminated Al2O3 thin films by NBAS process have improved more than 40% compared with that of conventional Al2O3 layers by the RF magnetron sputtering process under the same sputtering conditions.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.727-729
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• 2007

Inorganic-organic hybrid polymer provides various advantages including low-temperature process, high dielectric constant and direct photo-patterning. The hybrid dielectric was synthesized by the sol-gel process in which an acid-catalyzed solution of Si alkoxide and Zr alkoxide was used as a precursor. The electrical performance of transistors with hybrid dielectric was investigated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제32회 학술대회 초록집
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• pp.108-108
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• 2007

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제11회 학술발표회 논문개요집
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• pp.31-31
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• 1996

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2004년도 춘계총회 및 연구발표회 초록집
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• pp.50.4-50.4
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• 2004

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.528-528
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• 1996