• Bulletin of the Korean Chemical Society
• /
• 제15권8호
• /
• pp.608-610
• /
• 1994

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
• /
• pp.132-132
• /
• 2003

Second-order nonlinear optical(NLO) materials have been extensively studied for applications in photonic devices, such as frequency doubling and electro-optical(EO) modulation, because of their large optical nonlinearity, excellent processibility, low dielectric constant, and high laser damage thresholds. The poling behaviour of NLO chromophore in organic/inorganic matrixes showed the randomization of poled NLO chromophore in the absence of poling Held. The liquid crystal molecules in a droplet showed a long-range orientational order along a director. Therefore, liquid crystal effects on poling behaviour of NLO chromophore dispersed in organically modified inorganic sol-gel materials were investigated. Using sol-gel process for the development of NLO material has received increasing attention, Organically modifked inorganic NLO sol-Eel materials are obtained via incorporation of the organic NLO active chromophore into an alkoxysilane based inorganic network. One of the most important thing in this works was that tetraethoxysilane(TEOS) and methyltrimathoxysilane(HTMS) were used as precursor followed by hydrolysis and condensation without using any acidic catalyst during the process. The NLO chromophores in the liquid crystal nanodomains were well mixed with I/O hybrid matrix, deposited on transparent ITO-coated glasses. The poling behaviour of liquid crystal effects of NLO chromophore dispersed in I/O hybrid matrix were investigated by UV-vis spectroscopy. Size distribution and morphology of the NLO chromophores doped in the liquid crystal nanodomains dispersed in I/O hybrid matrix were investigated by SEM.

• 한국결정성장학회지
• /
• 제22권1호
• /
• pp.15-18
• /
• 2012

Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] and indium acetate [In$(CH_3COO)_3$] were used as starting precursors, and 2-methoxyethanol with 1-propanol as solvents. Upon annealing in a temperature range from 500 to $1000^{\circ}C$, the thin film crystallizes into polycrystalline $In_2O_3$(ZnO). The lowest electrical resistivity was obtained at an annealing temperature of $700^{\circ}C$ as $2{\Omega}{\cdot}cm$. Average optical transmittances were higher than 80% at all annealing temperatures. These experimental results confirm that the sol-gel spin-coating can be a good simplified practical method for forming transparent electrodes.

• 한국결정성장학회지
• /
• 제6권3호
• /
• pp.293-300
• /
• 1996

A continuous growth method (Orr's method) were developed to grow LiNbO3 single crystals. The optimum growth condition established are as follows; When the controlled temperature of a platinum crucible were 1190℃∼1210℃, the pulling rate was 2 mm/hr, the feeding rate was 1.5∼2.5 g/hr, and the rotation speed was 20 rpm. The phase and growth orientation of the grown LiNbO3 crystals wer characterized by a X-ray diffraction method. The overflowing phenomena, which induced cracking into the grown crystal during the process, was effectively suppressed by the control of the growth parameter.

• 한국결정성장학회지
• /
• 제6권3호
• /
• pp.301-308
• /
• 1996

Domain structure and properties of LiNbO3 single crystals grown by continuous method (Orr's method) were characterized. It was found that the growth striation of the grown crystals correspond with domain structure and the positive-negative domains were repeated with the perpendicular direction to the C axes. The formation of negative domains were related to the rapid crystal growth rate. The measured dielectric constant of the grown crystal was 140∼150 at 100 kHz at the room temperature and Curie point was 1153℃.

• Bulletin of the Korean Chemical Society
• /
• 제34권7호
• /
• pp.2086-2092
• /
• 2013

Two new high-nitrogen energetic compounds $ZTO{\cdot}2H_2O$ and $ZTO(phen){\cdot}H_2O$ have been synthesized (where ZTO = 4,4-azo-1,2,4-triazol-5-one and phen = 1,10-phenanthroline). The crystal structure, elemental analysis and IR spectroscopy are presented. Compound 1 $ZTO{\cdot}2H_2O$ crystallizes in the orthorhombic crystal system with space group Pnna and compound 2 $ZTO(phen){\cdot}H_2O$ in the triclinic crystal system with space group P-1. In $ZTO(phen){\cdot}H_2O$, there is intermolecular hydrogen bonds between the -NH group of ZTO molecule (as donor) and N atom of phen molecule (as acceptor). Thermal decomposition process is studied by applying the differential scanning calorimetry (DSC) and thermo thermogravimetric differential analysis (TG-DTG). The DSC curve shows that there is one exothermic peak in $ZTO{\cdot}2H_2O$ and $ZTO(phen){\cdot}H_2O$, respectively. The critical temperature of thermal explosion ($T_b$) for $ZTO{\cdot}2H_2O$ and $ZTO(phen){\cdot}H_2O$ is $282.21^{\circ}C$ and $195.94^{\circ}C$, respectively.

• 한국결정성장학회지
• /
• 제9권3호
• /
• pp.299-302
• /
• 1999

$La_{2-x}Sr_{x}CuO_{4}$ single-crystalline films were prepared on bulk single crystals of Zn-doped $La_{2-x}Sr_{x}CuO_{4}$ as the substrates by LPE technique using two deferent methods. When prepared using an alumina crucible in normal electrical furnace, the $La_{2-x}Sr_{x}CuO_{4}$ films were contaminated with less than 3 at% aluminum from the alumina crucibles. Aluminum contamination either reduced or completely destroyed the superconductivity of the $La_{2-x}Sr_{x}CuO_{4}$ films, For LPE growth by modified TSFZ method using an infrared heating furnace without crucibles, the $La_{2-x}Sr_{x}CuO_{4}$ films of x=0.11 showed superconducting with $Tc_{onset}=36\;K$, which is 10 K higher than that in the $La_{2-x}Sr_{x}CuO_{4}$ bulk single crystals.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
• /
• pp.371-387
• /
• 1999

La2-xSrxCuO4 single-crystalline films were prepared on bulk single crystals of Zn-doped La2CuO4 as the substrates by LPE technique using tow deferent methods. When prepared using an alumina crucible in normal electrical furnace, the La2-xSrxCuO4 films were contaminated with less than 3 at% aluminum from the alumina crucibles. Aluminum contamination either reduced or completely destroyed the superconductivity of the La2-xSrxCuO4 films. For LPE growthby modified TSFZ method using an infrared heating furnace without crucibles, the La2-xSrxCuO4 films of x=0.11 showed superconducting with Tconset 36 K, which is 10 K higher than that in the La2-xSrxCuO4 bulk single crystals.

• 한국세라믹학회지
• /
• 제25권2호
• /
• pp.95-100
• /
• 1988

Single crystals of sapphire were grown from solution by slow cooling method using B2O3 and PbO as flux agents. The morphology of grown crystals was tube, rhombohedral, or hexagonal-plate. It was found that the morphology and the size of grown crystal were highly dependent on the amount of fluxes in the solution, the ratio of B2O3 vs. PbO, and cooling rate.

• 한국결정성장학회지
• /
• 제5권3호
• /
• pp.209-214
• /
• 1995

99.9%의 $Fe_2O_3$ 를 0.2 wt% 첨가한 $SrTiO_3$ 단결정을 air 분위기와 질소분위기하에서 floating zone 법으로 성장시켰다. 성장속도는 5mm/hr 였으며 회전속도는 30rpm이었다. 육성한 결정을 성장방향에 수직하게 절단하여 준비한 시편을 질소분위기하에서 900, 1000, $1100^{\circ}C$에서 2시간동안 annealing한 후 비저항을 측정하였다. 측정한 비저항치를 전기전도도로 전환하고 이를 이용해 계산한 activation energy로서 전기전도도 향상기구를 설명하고자 하였다.