• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.29 no.3
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• pp.310-321
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• 2019

Objectives: The purpose of this study was to investigate types and characteristics of chemical substances used in LCD(Liquid crystal display) panel manufacturing process. Methods: The LCD panel manufacturing process is divided into the fabrication(fab) process and module process. The use of chemical substances by process was investigated at four fab processes and two module processes at two domestic TFT-LCD(Thin film transistor-Liquid crystal display) panel manufacturing sites. Results: LCD panels are manufactured through various unit processes such as sputtering, chemical vapor deposition(CVD), etching, and photolithography, and a range of chemicals are used in each process. Metal target materials including copper, aluminum, and indium tin oxide are used in the sputtering process, and gaseous materials such as phosphine, silane, and chlorine are used in CVD and dry etching processes. Inorganic acids such as hydrofluoric acid, nitric acid and sulfuric acid are used in wet etching process, and photoresist and developer are used in photolithography process. Chemical substances for the alignment of liquid crystal, such as polyimides, liquid crystals, and sealants are used in a liquid crystal process. Adhesives and hardeners for adhesion of driver IC and printed circuit board(PCB) to the LCD panel are used in the module process. Conclusions: LCD panels are produced through dozens of unit processes using various types of chemical substances in clean room facilities. Hazardous substances such as organic solvents, reactive gases, irritants, and toxic substances are used in the manufacturing processes, but periodic workplace monitoring applies only to certain chemical substances by law. Therefore, efforts should be made to minimize worker exposure to chemical substances used in LCD panel manufacturing process.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.34 no.3
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• pp.193-201
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• 2024

Objectives: Paints contain various types of metal substances. However, our review of MSDS (Material Safety Data Sheets) for paints found that their components were often kept secret or exact content information was otherwise not provided. We analyzed the metal elements in various inorganic pigment-based paints available in South Korea in this study and checked whether they contain hazardous metal substances as defined by the Occupational Safety and Health Acts. We investigated issues of health hazard classification related to the metal elements. The study is intended to contribute to strengthening the management of hazardous substances by suggesting improvements to MSDS. Methods: We randomly selected 19 samples that were predicted to contain hazardous inorganic pigments after reviewing MSDS among paints currently in use. The samples were analyzed using XRF (X-ray Fluorescence spectrometry), ICP_OES (Inductively Coupled Plasma-Optical Emission Spectroscopy) and SP-ICP-MS (Single Particle-ICP-Mass Spectroscopy). Results: The most common elements in the samples were Al (aluminum), Fe (iron), Ti (titanium), Ca (calcium), and Si (silica). One sample contained more lead than allowed by the limits. There were ten samples that could potentially contain nanoforms, seven samples that contained titanium dioxide, and six samples that contained complex inorganic color pigments (CICPs). Conclusions: Inorganic pigments in paints should be evaluated for hazards separately from other metallic compounds and reflected in the MSDS because they have different characteristics than other metallic compounds. These include particle size, crystal structure, and complex substances. The results of this study can be helpful for determining whether a paint contains sufficient hazardous metal compounds to affect its classification, and it can be a guideline for improving MSDS through comparative review and rationalization with the manufacturer's MSDS. This would make it possible to contribute to the management of chemical substances in the workplace through the proper MSDS disclosure of paints.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.109-112
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• 2003

The grain-boundary microcracking materials in the system $Al_2$TiO$_{5}$ -ZrTiO$_4$(ZAT) is influenced by the thermal expansion anisotropy. The range of ZAT compositions investigated had showed very low thermal expansions of 0.3~1.3$\times$10$^{-6}$ K loin compared to 8.29$\times$10$^{6}$ K of pure ZrTiO$_4$and 0.68$\times$10$^{6}$ K of polycrystalline $Al_2$TiO$_{5}$ , respectively, compared with the theoretical thermal expansion coefficient for a single crystal of $Al_2$TiO$_{5}$ , 9.70$\times$10$^{6}$ K. The low thermal expansion and microcraking temperature are apparently due to a combination of thermal contraction and expansion caused by the large thermal expansion anisotropy of the crystal a ies of the $Al_2$TiO$_{5}$ phase.

• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.317-321
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• 2003

The grain-boundary microcracking materials in the system A1$_2$Ti $O_{5}$ -ZrTi $O_4$(ZAT) is influenced by the thermal expansion anisotropy. The range of ZAT compositions investigated had showed very low thermal expansions of 0.3~1.3$\times$10$^{-6}$K compared to 8.29$\times$10$^{-6}$K of pure ZrTi $O_4$and 0.68$\times$10$^{-6}$K of polycrystalline A1$_2$Ti $O_{5}$ , respectively, compared with the theoretical thermal expansion coefficient for a single crystal of A1$_2$Ti $O_{5}$ , 9.70$\times$10$^{-6}$K. The low thermal expansion and microcraking temperature are apparently due to a combination of thermal contraction and expansion caused by the large thermal expansion anisotropy of the crystal axes of the A1$_2$Ti $O_{5}$ phase.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.239-245
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• 1995

Mn-Zn ferrite thin films were deposited on $SiO_2(1000 \AA)/Si(100)$ by ion beam sputtering using a single ion source. A mosaic target consisting of a single crystal(ll0) Mn-Zn ferrite with a Fe metal strip on it was used. As-deposited films without oxygen gas flow have a wiistite structure due to oxygen deficiencies, which originated from the extra metal atoms sputtered from the metal strips during deposition. The as-deposited films with oxygen gas flow, however, have a spinel structure with (111) preferred orientation. The crystallization of thin films was maximized at the ion beam extraction voltage of 2.lkV, at which the deposited films are bombarded appropriately by the energetic secondary ions reflected from the target. As the extraction voltage increased or decreased from the optimum value, the crystallinity of thin films becomes poor owing to a weak and severe bombardment of the secondary ions, respectively. Crystallization due to the bombardment of the secondary ions was also maximized at the beam incidence angle of $55^{\circ}$. The as-deposited ferrite thin films with a spinel structure showed ferrimagnetism and had an in-plane magnetization easy axis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.272-276
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• 2004

Inorganic materials, including gemstones, also have characteristic vibrational energies in the infrared that can be used for identification. For infrared spectroscopy, absorptions associated with the vibrations of the crystal structure (lattice vibrations) are characteristic of the given combination of atoms constituting the gemstone. Natural turquoise $CuAl_6(PO_4)_4\cdot(OH)_8\cdot 5H_2O$ can be distinguished easily from its common substitutes in the infrared range 2000~450$\textrm{cm}^{-1}$ by features in the mid-infrared. Gilson turquoise, which is a synthetic, exhibits a significantly smoother pattern when compared with natural turquoise, because of a different state of aggregation. Also, because the natural turquoise and gibbsite are so different chemically, their patterns are very different. The technique, which is infrared spectroscopy, is nondestructive and, with Fourier transform instrumentation, extremely rapid.

• Restorative Dentistry and Endodontics
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• v.32 no.2
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• pp.151-161
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• 2007

Dental caries is the most common disease in the oral cavity However, the mechanism and treatment of dental caries is not completely understood since many complex factors are involved. Especially the effect of pH on remineralization of early stage of dental caries is still controversial In this study, dental caries in dentin was induced by using lactic acidulated buffering solutions and the loss or inorganic substance was measured. Also decalcified specimens were remineralized by three groups of solution with different pH (group of pH 4.3, 5.0, and 5.5). Then, the amount and the area of inorganic substance precipitation was quantitatively analyzed with microradiograph. Also a qualitative comparison of the normal phase the demineralized phase, and the remineralized phase of hydroxyapatite crystal was made under SEM. The results were as follows, 1. In microradiograghic analysis, as the pH increased, the amount of remineralization in decalcified dentin tended to increase significantly As the pH decreaced, deeper decalcification, however, occurred along with remineralization. The group of pH 5.5 had a tendency to be remineralized without demineralization (p<0.05). 2. In SEM view, the remineralization in dentine caries occurred from the hydroxyapatite crystal surface surrounding the mesh of organic matrix, and eventually filled up the demineralized area. 3. 5 days after remineralization, hydroxyapatite crystal grew bigger with deposition of inorganic substance in pH 4.3 and 5.0 group, and the crystal in the remineralized area appeared to return to normal. After 10 days, the crystals in group of pH 4.3 and 5.0, which grew bigger after 5 days of remineralization, turned back to their normal size, but in group of pH 5.5, some crystals were found to double their size. In according to the results of this experiment, the decalcifying and remineralizing process of dentine is neither simple nor independent, but a dynamic process in which decalcification and remineralization occur simultaneously. The remineralization process occurred from the hydroxyapatite crystal surface.

• Fibers and Polymers
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• v.2 no.3
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• pp.135-140
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• 2001

Organic-inorganic hybrid composites consisting of poly(vinylidene fluoride) (PVDF) and SiO$_2$ were prepared through a sol-gel process and the crystallization behavior of PVDF in the presence of $SiO_2$ networks was investigated by spectroscopic, thermal and x-ray diffraction measurements. The hybrid composites obtained were relatively transparent, and brittleness increased with increasing content of tetraethoxysilane (TEOS). It was regarded from FT-lR and DSC thermal analyses that at least a certain interaction existed between PVDF molecules and the $SiO_2$ networks. X-ray diffraction measurements showed that all of the hybrid samples had a crystal structure of PVDF ${\gamma}$-phase. Fresh gel prepared from the sol-gel reaction showed a very weak x-ray diffraction peak near 2$\theta$=$21^{\circ}$ due to PVDF crystallization, and Intensity increased grade-ally with time after gelation. The crystallization behavior of PVDF was strongly affected by the amount of $SiO_2$ networks. That is, $SiO_2$ content directly influenced preference and disturbance fur crystallization. In polymer-rich hybrids, $SiO_2$ networks had a favorable effect on the extent of PVDF crystallization. In particular, the maximum portent crystallinity of PVDF occurred at the content of 3.7 wt% $SiO_2$ and was higher than that of pure PVDF. However. beyond about 10 wt% $SiO_2$, the crystallization of PVDF was strongly confined.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.94-97
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• 2004

In this paper, we investigate fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C:H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the new alignment material of a-C:H thin film An excellent voltage-transmittance (V-T) and response time curve of the IB-aligned FFS-LCD was observed with oblique IB exposure on the DLC thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IB exposure on the DLC thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.