• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.122-122
• /
• 2013

In this talk, some optical properties of quantum dot based mode-locked diode lasers and photonic crystal nano lasers will be discussed. Linewidth enhancement factor, chirp and interband injection locking technique of quantum dot mode-locked lasers will be presented. Also various types of photonic crystal buried heterostructure lasers toward coherent nano laser will be covered as well.

• Journal of information and communication convergence engineering
• /
• v.7 no.4
• /
• pp.556-560
• /
• 2009

We have investigated the spectral characteristics of semiconductor lasers locked to the external light injected from a modulated laser. study on FM sideband injection locking has shown that when SLs are locked to the target sidebands of the directly modulated ML, the presence of the unselected sidebands influences the resulting microwave signals. The unselected signals can produce the unwanted beat signals around the desired beat signal, which degrade the overall system performance. This analysis way to generate Giga HZ signal generation.

• Journal of the Optical Society of Korea
• /
• v.12 no.4
• /
• pp.303-308
• /
• 2008

Directly modulated fiber-optic links generally suffer higher link loss and larger signal distortion than externally modulated links. These result from the electron-photon conversion loss and laser modulation dynamics. As a method to overcome the drawbacks, we have experimentally demonstrated the RF performance of directly modulated, ultra-strong injection-locked gain-lever distributed Bragg reflector (DBR) lasers. The free-running DBR lasers exhibit an improved amplitude modulation efficiency of 12.4 dB under gain-lever modulation at the expense of linearity. By combining gain-lever modulation with ultra-strong optical injection locking, we can gain the benefits of both improved modulation efficiency from the gain-lever effect, plus improved linearity from injection locking. Using an injection ratio of R=11 dB, a 23.4-dB improvement in amplitude response and an 18-dB improvement in spurious-free dynamic range have been achieved.

• Korean Journal of Optics and Photonics
• /
• v.1 no.2
• /
• pp.191-197
• /
• 1990

An experiment on the phase stability of injection-locked beam is done by using AlGaAs semiconductor lasers. The coherence of two beams from the master and slave lasers is measured by interference between the beams in the Twymann-Green interferometer. The phase change of the output beam of the slave laser as a function of the driving current is measured in the Mach-Zehnder interferometer consisted of the master and slave lasers and a value of 2.5radlmA is obtainccl.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.9 no.4
• /
• pp.811-815
• /
• 2005

We theoretically studied synchronization of chaotic oscillation in semiconductor lasers with chaotic light injection feed-back induced chaotic light generated from a master semiconductor laser was injected into a solitary slave semiconductor laser. The slave laser subsequently exhibited synchronized chaotic output for a wide parameter range with strong injection and frequency detuning within the injection locking scheme. We also analytically examined chaos synchronization based on a linear stability analysis from the view point of synchronization based on a linear stability analysis from the view point of modulation response of injection locked semiconductor lasers to chaotic light signal.

• Journal of information and communication convergence engineering
• /
• v.8 no.4
• /
• pp.457-460
• /
• 2010

we have analyzed tens of Giga pulse signal generation using sideband injection locking scheme. The numerical model for semiconductor lasers under the strong optical injection is based on the Lang's equation and has been extended in order to take into account the simultaneous injection of the multiple sidebands of the current-modulated laser. The numerical simulation results show that the unselected sidebands will affect the optical and RF-spectral characteristics even though the semiconductor laser is locked to the target sidebands.

• Korean Journal of Optics and Photonics
• /
• v.14 no.2
• /
• pp.161-165
• /
• 2003

Optical 60 ㎓ millimeter-wave (MMW) signal generation is demonstrated using the sideband injection-locking method in the master/slave configuration, where two slave lasers are locked to two among several side-bands produced by the direct rf-modulation of a master laser. These two locked slave laser outputs beat against each other in the photo-detector and produce stable and very pure 60 ㎓ signals.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2004.05a
• /
• pp.66-69
• /
• 2004

We have investigated the spectral characteristics of semiconductor lasers locked to the external light injected from a modulated laser. The numerical model for semiconductor lasers under the external optical injection is based on the Lang's equation and has been extended in order to take into account the simultaneous injection of the multiple sidebands of the current-modulated laser. In this paper, we have analyzed characteristics of semiconductor laser using optical injection locking

• Korean Journal of Optics and Photonics
• /
• v.18 no.5
• /
• pp.317-322
• /
• 2007

We performed injection-locking by two independent semiconductor lasers and investigated the spectral modes of the injection-locked laser From the observation of the saturated absorption spectrum in the $^{85}Rb$ D1 transition line, we have confirmed that the frequency of the injection-locked slave laser is synchronized by the frequency of the master laser, and the slave laser has a narrow linewidth after injection-locking. According to the intensity injected into the slave laser, we measured the variation of the injection-locking range and the mode of the injection-locked slave laser by using the confocal Fabry-Ferret interferometer. In the case of the incomplete injection-locking, we observed the competition between the free running mode of the slave laser and the mode of the master laser and analyzed the modes of the injection-locked slave laser.

• Journal of information and communication convergence engineering
• /
• v.4 no.3
• /
• pp.101-104
• /
• 2006

We have investigated the spectral characteristics of the semiconductor lasers locked to the sidebands of the master laser in this paper, which were expressed by a series of the Bessel function. The numerical model for the semiconductor lasers based on the typical Lang's equation has been extended in order to take into account the simultaneous injection of the multiple sidebands of the directly modulated ML. We analyses characteristics of direct intensity modulation.