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Electrical Characteristics of Bottom-Contact Organic Thin-Film-Transistors Inserting Adhesion Layer Fabricated by Vapor Deposition Polymerization and Ti Adhesion Metal Layer

  • Park, Il-Houng;Hyung, Gun-Woo;Choi, Hak-Bum;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.958-961
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    • 2007

  • The electrical characteristics of organic thin-filmtransistor (OTFTs) can be improved by inserting adhesion layer on gate dielectrics. Adhesion layer was used as polymeric adhesion layer deposited on inorganic gate insulators such as silicon dioxide $(SiO_2)$ and it was formed by vapor deposition polymerization (VDP) instead of spin-coating process. The OTFTs obtained the on/off ratio $of{\sim}10^4$, threshold voltage of 1.8V, subthreshold slop of 2.9 V/decade and field effect mobility about $0.01\;cm^2/Vs$.

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