• Title/Summary/Keyword: Infomation interface

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On the Development of LCD Simulator: ProLCD

  • Lee, Han-Yong;Pang, Se-Chung;Kim, Hyun-Suk;Yu, Mi;Oh, Jun-Sik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.59-60
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    • 2000
  • We have developed the LCD Simulator, which is called "ProLCD", in order to reduce time and efforts for the design and analysis of LCDs. We describe the numerical models implementing the computation of LC directors and electro-optics, the graphic user interface and the visualization modules. Many applications show that ProLCD is a very useful, interactive design tool with good reliability.

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Invited Paper: Progresses in BiNem display technology for e-reading applications

  • Angele, Jacques;Joly, Stephane;Martinot-Lagarde, Philippe;Faget, Luc;Osterman, Jesper;Scheffer, Terry;Leblanc, Francois
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.83-86
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    • 2009
  • BiNem$^{(R)}$ displays have entered volume manufacturing in 2009. Applications range from e-labels to e-readers. We have developed 6-inch $960{\times}720$ pixels passive matrix BiNem prototypes achieving 40 % brightness and fluid user interface based on partial image / dynamic pointer addressing. Active-matrix addressing is proposed to provide even faster operation.

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The doping effect and electronic structure of alkali metal doped tris (8-hydroxyquinoline) aluminum

  • Kim, Ki-Soo;Lee, Jong-Lam
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1059-1060
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    • 2009
  • We have investigated the pristine alkali metal doping effect which is the Fermi level of alkali metal doped Alq3 shifts toward the LUMO. In-situ measurements of synchrotron radiation photoelectron spectroscopy revealed that the interface dipole or bend bending in previous reports are not the pristine alkali metal doping effect

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Energy-level alignment and charge injection at electrodeorganic interfaces

  • Helander, M.G.;Wang, Z.B.;Lu, Z.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.112-114
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    • 2009
  • Charge injection at electrode-organic interfaces is key to the performance, lifetime and stability of organic electronic devices. The link between fundamental material properties and the energy-level alignment at electrode-organic interfaces will be discussed. In addition the impact of the injection barrier height-a parameterization of the energylevel alignment-on device characteristics will also be discussed.

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The effect of surface treatment on interface formation between pentacene and polymer dielectrics

  • Han, Seung-Jin;Kim, Jae-Hoon;Park, Yong-Sup;Back, Kyu-Ha;Kim, Gi-Heon;Hong, Sa-Hwan;Kim, Dal-Hyun;Kim, Jeong-Won
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1415-1418
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    • 2007
  • Electronic and structural properties of the interfaces formed by pentacene deposited on a polymer-based dielectrics are investigated by electron spectroscopy, atomic force microscopy, and water contact angle measurement. There is strong influence of surface treatment of the polymer dielectrics on the energy level alignment and the surface topography upon the pentacene deposition.

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Cost Effective 60Hz FHD LCD with 800Mbps AiPi Technology

  • Nam, Hyoung-Sik;Oh, Kwan-Young;Kim, Seon-Ki;Kim, Nam-Deog;Berkeley, Brian H.;Kim, Sang-Soo;Lee, Yong-Jae;Nakajima, Keiichi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.677-680
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    • 2008
  • AiPi technology incorporates an embedded clock and control scheme with a point-to-point bus topology, achieving the smallest possible number of interface lines between a timing controller and source drivers. A 46" AiPi-based 10-bit FHD prototype requires only 20 interface lines, compared to 38 lines for mini-LVDS. The measured maximum data rate per one data pair is more than 800Mbps.

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Capacitance-Voltage Characteristics of MIS Capacitors Using Polymeric Insulators

  • Park, Jae-Hoon;Choi, Jong-Sun
    • Journal of Information Display
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    • v.9 no.2
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    • pp.1-4
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    • 2008
  • In this study, we investigate the capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (MIS) capacitors consisting of pentacene, as an organic semiconductor, and polymeric insulators such as poly(4-vinylphenol) (PVP) orpolystyrene (PS) prepared by spin-coating process, to analyze the interfacial characteristics between pentacene and polymeric insulators. Compared with the device with PS, the MIS capacitor with PVP exhibited a pronounced shift in the flat-band voltage according to the bias sweep direction. This hysteric feature in the C-V characteristics is thought to be attributed to the trapped charges at the interface between pentacene and PVP owing to the hydrophilicity of PVP. From the experimental results, we can conclude that surface polarity of polymeric insulator has a critical effect on the interfacial properties, thereby affecting the bias stability of organic thin-film transistors.

Interfacial Reaction Between Oxide Fillers and $P_2O_5$ Glass Matrix for Barrier Ribs in Plasma Display Panel

  • Chong, Eu-Gene;Jeon, Jae-Sam;Sung, Woo-Kyung;Kim, Nam-Sok;Kim, Hyung-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.935-937
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    • 2006
  • Phosphate glass system is expected to be useful as a lead-free material in many devices in plasma display panels (PDP). The present study is mainly focused on the evaluation of interface reaction between ceramic fillers and phosphate glass matrix for barrier ribs in PDP. The results suggest that properties of barrier rib depend on the crystallization behavior and interface reaction between the fillers and glass matrix.

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Chemical structure of the bilayer $Ag/Li_2O$ cathode interface in organic light-emitting diodes

  • Joo, Min-Ho;Baik, Min-Kyung;Choi, Jong-Kwon;Park, Kyu-Ho;Lee, Jay-Man;Kim, Myung-Seop;Yang, Joong-Hwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1006-1009
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    • 2006
  • The chemical structure of the interface between Ag with $Li_2O$ and tri (8-hydroxyquinoline) aluminum (Alq) was investigated by using in-situ characterization of x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). $Li_2O$ on Ag had lower barrier height than LiF on Ag. XPS and UPS results show the interaction between $Li_2O$ and Alq leads to gap state formation in HOMO of Alq.

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Plasma Oxidation Effect on Ultralow Temperature Polycrystalline Silicon TFT on Plastic Substrate

  • Kim, Yong-Hae;Moon, Jae-Hyun;Chung, Choong-Heui;Yun, Sun-Jin;Park, Dong-Jin;Lim, Jung-Wook;Song, Yoon-Ho;Lee, Jin-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1122-1125
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    • 2006
  • The TFT performances were enhanced and stabilized by plasma oxidation of the polycrystalline Si surface prior to the plasma enhanced atomic layer deposition of $Al_2O_3$ gate dielectric film. We attribute the improvement to the formation of a high quality oxide interface layer between the gate dielectric film and the poly-Si film. The interface oxide has a predominant effect on the TFT's characteristics, and is regulated by the gap distance between the electrode and the polycrystalline Si surface.

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