• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.235-238
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• 2006

Interface formation between $12CaO{\cdot}7Al_2O_3(C12A7:e^-)$ and Alq3 was investigated using in-situ ultra-violet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). The work function and vacuum level shift of $C12A7:e^-$ were change by different surface treatment from 2.6eV to 4.2eV. Also vacuum level shift $(\Delta)$ at the interface were from +0.3eV to -0.3eV.

• Journal of Information Display
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• v.10 no.1
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• pp.37-44
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• 2009

AiPi technology incorporates an embedded clock and control scheme with a point-to-point bus topology, thereby having the smallest possible number of interface lines between a timing controller and column drivers. A point-to-point architecture boosts the data rate and reduces the number of interface lines, because impedance matching can be easily achieved. An embedded clock and control scheme is implemented by means of multi-level signalling, which results in a simple clock/data recovery circuitry. A 46" AiPi-based 10-bit FHD prototype requires only 20 interface lines, compared to 38 lines for mini-LVDS. The measured maximum data rate per data pair is more than 800 Mbps.

• Journal of Information Display
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• v.8 no.4
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• pp.1-4
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• 2007

In the present study, we propose Monte Carlo simulation that takes into consideration the interface phenomena between liquid crystal and substrate. We use rigid model molecules of liquid crystal and substrate. Interface is generated using potential field that induces decomposition of molecules. We use hard spherocylinders as model liquid crystal molecules. Substrate is modeled as region composed of shorter spherocylinders. Our results show that there is a case in which nematic order is reinforced in the vicinity of rubbed substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.952-953
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• 2007

In the present study, we propose MC simulation that takes interface phenomena between liquid crystal and substrate into consideration. We use rigid model molecules of liquid crystal and substrate. Interface is generated using potential field that induces decomposition of molecules.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.108-111
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• 2009

We have determined the electronic energy level alignment at the interface between 4,4'-bis-N-phenyl-1-naphthylamino biphenyl (NPB) and 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HAT-CN) using ultraviolet photoelectron spectroscopy (UPS). The highest occupied molecular orbital (HOMO) of 20 nm thick HAT-CN film was located at 3.8 eV below the Fermi level. Thus the lowest unoccupied molecular orbital (LUMO) is very close to the Fermi level. The HOMO position of NPB was only about 0.3 eV below Fermi level at NPB/HAT-CN interface. This enables an easy excitation of electrons from the NPB HOMO to the HAT-CN LUMO, creating electron-hole pairs across this organic-organic interface. We also study the interaction of HAT-CN with a few metallic surfaces including Ca, Cu, and ITO using UPS and ab-inito electronic structure calculation techniques.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.129-134
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• 2004

The development of fabrication processes of polycrystalline-silicon-thin-film transistors (poly-Si TFTs) at low temperatures is reviewed. Rapid crystallization through laser-induced melt-regrowth has an advantage of formation of crystalline silicon films at a low thermal budget. Solid phase crystallization techniques have also been improved for low temperature processing. Passivation of $SiO_2$/Si interface and grain boundaries is important to achieve high carrier transport properties. Oxygen plasma and $H_2O$ vapor heat treatments are proposed for effective reduction of the density of defect states. TFTs with high performance is reported.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.69-74
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• 2004

System-on-glass technology made with low temperature poly-Si TFT has been rapidly advancing in recent years. We have developed a low-power, narrow edged frame, 1.9inch system-on-glass LCD which fully integrates a 16-bit RGB interface driver and all power circuits required for driving the LCD. In this paper, the latest poly-Si TFT circuit technologies used in the newly developed LCD are discussed. The development trends are also reviewed.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.674-676
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• 2008

An electrostatic discharge (ESD) or a noise supplied from the outside has an effect on communication between the timing controller (TCON) and the memory element (EEPROM) through the interface between the timing controller and the memory element in liquid crystal displays (LCD). Therefore, we must apply ESD protection methods to LCD operating circuits for a normal operation. Our ESD protection circuit is to prevent from bi-directional communication errors between TCON and EEPROM due to an electrostatic discharge (ESD).

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.718-722
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• 2006

The dependence of n-channel 2 shot SLS poly-Si TFT characteristics on the DOS (density of states) parameters was investigated by using a device simulation. Device performances were most sensitive to the DOS of poly-Si/gate insulator (GI) interface and poly-Si active layer. Deep level states at the poly-Si/GI interfaces strongly affect the subthreshold slope.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.215-216
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• 2000

We fabricated the thin-film transistors using organic semiconductor, pentacene, on $SiN_x$, gate insulator. X-ray diffraction experiments were performed for the sample after heat-treatments at higher temperatures. We confirmed that we obtained "thin-film phase" from the condition used here. From the electrical measurements, we also confirmed that no charges are accumulated at the interface between organic and insulating layer, and FET characteristics of the organic FET using pentacene was discussed.