• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.4
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• pp.92-99
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• 2011

Effect of a finite grounded substrate on mutual coupling characteristics of a 2-element array antenna using inductor loaded patch antennas is investigated. The mutual coupling characteristics of a 2-element array antenna using inductor loaded patch antennas positioned along the E-plane are compared with those positioned along the H-plane. The magnitude of mutual coupling is very small and the distance between the center of element and the substrate edge on the E-plane for the minimum mutual coupling is similar regardless of the direction at which antenna elements are positioned in the case of a 2-element array antenna using inductor loaded patch antennas.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.982-986
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• 1998

The peak-power-tracking solar array regulator sensing the inductor current is proposed. Since it uses the inductor current as the solar array output power information, the PPT control scheme can be greatly simplified. The charge controlled two-loop scheme is presented to improve the dynamics due to the inductor current sensing. The comparison between the single-voltage loop controlled system and the two-loop controlled system employing the charge control is presented. This paper also contains the simulation results of that comparison.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.2105-2107
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• 2004

In this study, Spiral inductors on the $SiO_2$/Si(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60 ${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the RF frequency were investigated to analyze performance of inductor arrays. Also, We recommend that the reasonable Q-factors, spec's turns and thickness of the coil for inductors cab be set to be ideal condition.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.33-38
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• 2017

In this paper, a 4-channel common-cathode VCSEL diode driver array with 3.125 Gb/s per channel operation speed is realized. In order to achieve faster speed of the switching main driver with relatively large transistors, the transmitter array chip consists of a pre-amplifier with active inductor stage and also an input buffer with modified equalizer, which leads to bandwidth extension and reduced current consumption. The utilized VCSEL diode provides inherently 2.2 V forward bias voltage, $50{\Omega}$ resistance, and 850 fF capacitance. In addition, the main driver based upon current steering technique is designed, so that two individual current sources can provide bias currents of 3.0 mA and modulation currents of 3.3 mA to VCSEL diodes. The proposed 4-channel VCSEL driver array has been implemented by using a $0.11-{\mu}m$ CMOS technology, and the chip core occupies the area of $0.15{\times}0.18{\mu}m^2$ and dissipates 22.3 mW per channel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.912-915
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• 2004

Inductors material utilized in the downsizing passive devices and Rf components requires the physical and electrical properties at given area such as inductors thickness reduction, inductance and q-factor increase, low leakage current and thermal stability. In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of $2{\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to $60{\mu}m$ and from 20 to $70{\mu}m$, respectively. Inductance and Q factor dependent on the RF frequency were investigated to analyze performance of inductor arrays

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.37-44
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• 2007

A low-voltage high-linear bipolar OTA and its application to IF bandpass filter for GSM cellular telephone are presented. The OTA consists of a low-voltage linear transconductor, a translinear current gain cell, and three current mirrors. The bandpass filter is composed of two cascaded identical second-order bandpass filters, which consist of a resistor, a capacitor, and a grounded simulated inductor realized with two OTA's and a grounded capacitor. SPICE simulations using an 8 GHz bipolar transistor-array parameter show that the OTA with a transconductance of 1 mS exhibits a linearity error of less than ${\pm}2%$ over an input voltage range of ${\pm}0.65\;V$ at supply voltages of ${\pm}2.0\;V$. Temperature coefficient of the transconductance is less than $-90ppm/^{\circ}C$. The bandpass filter has a center frequency of 85 MHz and Q-factor of 80. Temperature coefficient of the center frequency is less than $-182ppm/^{\circ}C$. The power dissipation of the filter is 128 mW.

• Journal of Satellite, Information and Communications
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• v.9 no.3
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• pp.86-90
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• 2014

A DC-DC Converter operates in CCM(Continuous Coundcution Mode), DCM(Discontinuous Conduction Mode), CRM(Critical Conduction Mode). The CRM is boundary between CCM and DCM. If a DC-DC converter is designed to operate in CRM, its inductor volume can decrease and power loss which caused by switch and diode can decrease. In this paper, the DC-DC converter which operates in CRM is applied to a solar array regulator(SAR) for the satellite. The switching frequency of the CRM boost SAR changes according to input and output condition. The switching frequency limit logic is applied to limit the maximum switching frequency. Meanwhile, the small signal transfer function of the CRM boost SAR is simple, so the controller design is also simple. In this paper, the small signal transfer function from control reference to solar array voltage is induced. And the voltage controller is designed based on the small signal transfer function. Finally, the CRM boost SAR is verified by simulation.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.3
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• pp.201-210
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• 2014

In this paper, dc-link voltage control of a grid-connected QZSI is presented. Since the input current of the ZSI is discontinuous, a capacity with relatively large capacitance should be connected to the output of the PV array in order to reduce the current ripple. Due to the presence of the impedance network inductor in series with the PV array, the QZSI can achieve continuous input current flow. Several dc-link voltage control methods are compared and the method for power quality improvement is also presented. The performance of the proposed method is verified through both simulation and experimental results.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39B no.7
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• pp.440-448
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• 2014

A $4{\times}10$ Gb/s Transimpedance Amplifier (TIA) array is implemented in $0.13{\mu}m$ CMOS process technology, which will be used in the receiver of TWDM-PON system. A technology for bandwidth enhancement of a given $4{\times}10$ Gb/s TIA presented under inductor peaking technology and a single 1.2V power supply based low voltage design technology. It achieves 3 dB bandwidth of 7 GHz in the presence of a 0.5 pF photodiode capacitance. The trans-resistance gain is $50dB{\Omega}$, while 48 mW/ 1channel from a 1.2 V supply. The input sensitivity of the TIA is -27 dBm. The chip size is $1.9mm{\times}2.2mm$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.8 s.338
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• pp.53-60
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• 2005

Recently, sub-micron CMOS technologies have taken the place of III-V materials in a number of areas in integrated circuit designs, in particular even for the applications of gjgabit optical communication applications due to its low cost, high integration level, low power dissipation, and short turn-around time characteristics. In this paper, a four-channel transimpedance amplifier (TIA) array is realized in a standard 0.35mm CMOS technology Each channel includes an optical PIN photodiode and a TIA incorporating the fully differential regulated cascode (RGC) input configuration to achieve effectively enhanced transconductance(gm) and also exploiting the inductive peaking technique to extend the bandwidth. Post-layout simulations show that each TIA demonstrates the mid-band transimpedance gain of 59.3dBW, the -3dB bandwidth of 2.45GHz for 0.5pF photodiode capacitance, and the average noise current spectral density of 18.4pA/sqrt(Hz). The TIA array dissipates 92mw p in total from a single 3.3V supply The four-channel RGC TIA array is suitable for low-power, high-speed optical interconnect applications.