• 제목/요약/키워드: Inductively-coupled-plasma chemical vapor deposition

검색결과 83건 처리시간 0.034초

수치모델을 이용한 ICP-CVD 장치의 증착 균일도 해석 (Numerical Modeling of Deposition Uniformity in ICP-CVD System)

  • 주정훈
    • 한국표면공학회지
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    • 제41권6호
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    • pp.279-286
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    • 2008
  • Numerical analysis is done to investigate which would be the most influencing process parameter in determining the uniformity of deposition thickness in TiN ICP-CVD(inductively coupled plasma chemical vapor deposition). Two configurations of ICP antenna are modeled; side and top planar. Side and top gas inlets are considered with each ICP antenna geometries. Precursor for TiN deposition was TDMAT(Tetrakis Diethyl Methyl Amido Titanium). Two step volume dissociation of TDMAT is used and absorption, desorption and deposition surface reactions are included. Most influencing factors are H and N concentration dissociated by electron impact collisions in plasma volume which depends on the relative positions of gas inlet and ICP antenna generated hot plasma region. Low surface recombination of N shows hollow type concentration, but H gives a bell type distribution. Film thickness at substrate edges is sensitive to gas flow rate and at high pressures getting more dependent on flow characteristics.

유도결합 플라즈마 화학기상증착법에 의해 활성화된 탄소원자를 이용한 Ni/SiO2/Si 기판에서 그래핀 성장 (Graphene Formation on Ni/SiO2/Si Substrate Using Carbon Atoms Activated by Inductively-Coupled Plasma Chemical Vapor Deposition)

  • 람반낭;김의태
    • 한국재료학회지
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    • 제23권1호
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    • pp.47-52
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    • 2013
  • Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

ICP 표면 처리된 Si 기판 위에 성장된 Ge 층의 초기 성장 상태 연구 (Early stage of heteroepitaxial Ge growth on Si(100) substrate with surface treatments using inductively coupled plasma (ICP))

  • 양현덕;길연호;심규환;최철종
    • 한국결정성장학회지
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    • 제21권4호
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    • pp.153-157
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    • 2011
  • Inductively Coupled Plasma(ICP)를 이용하여 다양한 조건으로 표면 처리한 Si(100) 기관 위에 Low Pressure Chemical Vapor Deposition(LPCVD)를 이용하여 Ge 층을 이종접합 성장하고, Ge 층 성장 초기의 표면 상태를 Scanning Electron Microscopy(SEM)을 통해 분석하였다. ICP를 이용하여 표면 처리된 Si(100) 기판 위에 성장된 Ge 층의 경우 ICP 처리하지 않은 시편보다 Ge 성장율이 약 5배 이상 증가되었다. ICP 처리된 시편의 Ge 성장률 증가는 ICP 표면 처리 공정으로 Si 기관 표면에서 떨어져 나간 missing dimer가 Ge adatom들에 핵을 형성할 자리를 제공하여 Ge island의 형성과 융합을 촉진시키는 것으로 사료된다.

Chemical structure evolution of low dielectric constant SiOCH films during plasma enhanced plasma chemical vapor deposition and post-annealing procedures

  • Xu, Jun;Choi, Chi-Kyu
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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    • pp.34-46
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    • 2002
  • Si-O-C-H films with a low dielectric constant were deposited on a p-type Si(100) substrate using a mixture gases of the bis-trimethylsilyl-methane (BTMSM) and oxygen by an inductively coupled plasma chemical vapor deposition (ICPCYD). High density plasma of about $~10^{12}\textrm{cm}^{-3}$ is obtained at low pressure (<400 mTorr) with rf power of about 300W in ICPCVD where the BTMSM and $O_2$ gases are fully dissociated. Fourier transform infrared (FTIR) spectra and X-ray photoelectron spectroscopy (XPS) spectra show that the film has $Si-CH_3$ and OH-related bonds. The void within films is formed due to $Si-CH_3$ and OH-related bonds after annealing at $500^{\circ}C$ for the as-deposition samples. The lowest relative dielectric constant of annealed film at $500^{\circ}C$ is about 2.1.

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rf 플라즈마 화학기상증착기의 제작 및 특성 (Characterization and Construction of Chemical Vapor Deposition by using Plasma)

  • 김경례;김용진;현준원;이기호;노승정;최병구
    • 한국표면공학회지
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    • 제33권2호
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    • pp.69-76
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    • 2000
  • The rf plasma chemical vapor deposition is a common method employed for diamond or amorphous carbon deposition. Diamond possesses the strongest bonding, as exemplified by a number of unique properties-extraordinary hardness, high thermal conductivity, and a high melting tempera tore. Therefore, it is very important to investigate the synthesis of semiconducting diamond and its use as semiconductor devices. An inductively coupled rf plasma CVD system for producing amorphous carbon films were developed. Uniform temperature and concentration profiles are requisites for the deposition of high quality large-area films. The system consists of rf matching network, deposition chamber, pumping lines for gas system. Gas mixtures with methane, and hydrogen have been used and Si (100) wafers used as a substrate. Amorphous carbon films were deposited with methane concentration of 1.5% at the process pressure of S torr~20 torr, and process temperature of about $750^{\circ}C$. The nucleation and growth of the amorphous carbon films have been characterized by several methods such as SEM and XRD.

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고밀도 플라즈마 화학 증착 장치를 이용한 $TiB_2$ 박막 제조 (Deposition Of $TiB_2$ Films by High Density Plasma Assisted Chemical Vapor Deposition)

  • 이승훈;남경희;홍승찬;이정중
    • 한국표면공학회지
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    • 제38권2호
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    • pp.60-64
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    • 2005
  • The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,\;BCl_3,\;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{\circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.

High-Quality Graphene Films Synthesized by Inductively-Coupled Plasma-Enhanced Chemical Vapor Deposition

  • Lam, Van Nang;Park, Nam-Kuy;Kim, Eui-Tae
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2012년도 춘계학술발표대회
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    • pp.90.2-90.2
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    • 2012
  • Graphene has recently attracted significant attention because of its unique optical and electrical properties. For practical device applications, special attention has to be paid to the synthesis of high-quality graphene on large-area substrates. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on Ni or Cu substrates. Among these techniques, CVD is superior to the others from the perspective of technological applications because of its possibility to produce a large size graphene. PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures, such as carbon nanotubes and nanosheets. Compared with thermal CVD, PECVD possesses a unique advantage of additional high-density reactive gas atoms and radicals, facilitating low-temperature, rapid, and controllable synthesis. In the current study, we report results in synthesizing of high-quality graphene films on a Ni films at low temperature. Controllable synthesis of quality graphene on Cu foil through inductively-coupled plasma CVD (ICPCVD), in which the surface chemistry is significantly different from that of conventional thermal CVD, was also discussed.

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극저온($150^{\circ}C$)에서 ICP-CVD로 증착한 Nanocrystalline-Si 박막 (Nanocrystalline-Si Thin Film Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) at $150^{\circ}C$)

  • 박상근;한상면;신광섭;한민구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.12-14
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    • 2005
  • Inductively Coupled Plasma Chemical Vapor Deposition(ICP-CVD)를 이용하여 공정온도 $150^{\circ}C$에서 Nanocrystalline silicon (nc-Si) 박막을 증착하였다. 실험에서 헬륨(He)가스, 수소($H_2$)가스 그리고 헬륨(He)과 수소($H_2$)의 혼합가스로 희석한 사일렌($SiH_4$)을 반응가스로 이용하였다. 이 혼합가스는 3sccm의 사일렌($SiH_4$)에 헬륨(He)과 수소($H_2$)의 주입율을 20sccm에서부터 60sccm까지 변화시켜 조건을 달리하여 사용했다. 증착한 Nc-Si 박막을 X-ray diffraction (XRD)으로 분석하여 각각의 조건에 대한 Nc-Si 박막의 속성을 연구하였다. 헬륨(He) 또는 수소($H_2$) 혼합가스의 주입율이 커지면서 <111>과 <222>의 최고점(peak)이 더 높아졌으며 결정화 되지 않고 비결정질로 남아 있는 성장층(incubation layer)이 얇아졌다. 이 결과는 nc-Si를 증착할 때 사용한 수소($H_2$) 플라즈마와 헬륨(He) 플라즈마의 효과로 설명할 수 있다. 실험을 통해 ICP-CVD로 증착한 nc-Si 박막을 박막 전계효과트랜지스터 (TFT)에서 우수한 특성의 전자수송층(active layer)으로 사용할 수 있는 것을 확인하였다.

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