KCNQ family constitutes slowly-activating potassium channels among voltage-gated potassium channel superfamily. Recent studies suggested that KCNQ4 and 5 channels are abundantly expressed in smooth muscle cells, especially in lower urinary tract including corpus cavernosum and that both channels can exert membrane stabilizing effect in the tissues. In this article, we examined the electrophysiological characteristics of overexpressed KCNQ4, 5 channels in HEK293 cells with recently developed KCNQ-specific agonist. With submicromolar EC50, the drug not only increased the open probability of KCNQ4 channel but also increased slope conductance of the channel. The overall effect of the drug in whole-cell configuration was to increase maximal whole-cell conductance, to prolongate the activation process, and left-shift of the activation curve. The agonistic action of the drug, however, was highly attenuated by the co-expression of one of the β ancillary subunits of KCNQ family, KCNE4. Strong in vitro interactions between KCNQ4, 5 and KCNE4 were found through Foster Resonance Energy Transfer and co-immunoprecipitation. Although the expression levels of both KCNQ4 and KCNE4 are high in mesenteric arterial smooth muscle cells, we found that 1 μM of the agonist was sufficient to almost completely relax phenylephrine-induced contraction of the muscle strip. Significant expression of KCNQ4 and KCNE4 in corpus cavernosum together with high tonic contractility of the tissue grants highly promising relaxational effect of the KCNQ-specific agonist in the tissue.
Hirata, T.;Tsutsui, C.;Yokoi, Y.;Sakatani, Y.;Mori, A.;Horii, A.;Yamamoto, T.;Taguchi, A.
Proceedings of the Korean Vacuum Society Conference
/
2010.02a
/
pp.44-45
/
2010
We are currently conducting studies on culturing and biocompatibility assessment of various cells such as neural stem cells and induced pluripotent stem cells(IPS cells) on carbon nanotube (CNT), on nerve regeneration electrodes, and on silicon wafers with a focus on developing nerve integrated CNT based bio devices for interfacing with living organisms, in order to develop brain-machine interfaces (BMI). In addition, we are carried out the chemical modification of carbon nanotube (mainly SWCNTs)-based bio-nanosensors by the plasma ion irradiation (plasma activation) method, and provide a characteristic evaluation of a bio-nanosensor using bovine serum albumin (BSA)/anti-BSA binding and oligonucleotide hybridization. On the other hand, the researches in the case of "novel plasma" have been widely conducted in the fields of chemistry, solid physics, and nanomaterial science. From the above-mentioned background, we are conducting basic experiments on direct irradiation of body tissues and cells using a micro-spot atmospheric pressure plasma source. The device is a coaxial structure having a tungsten wire installed inside a glass capillary, and a grounded ring electrode wrapped on the outside. The conditions of plasma generation are as follows: applied voltage: 5-9 kV, frequency: 1-3 kHz, helium (He) gas flow: 1-1.5 L/min, and plasma irradiation time: 1-300 sec. The experiment was conducted by preparing a culture medium containing mouse fibroblasts (NIH3T3) on a culture dish. A culture dish irradiated with plasma was introduced into a $CO_2$-incubator. The small animals used in the experiment involving plasma irradiation into living tissue were rat, rabbit, and pick and are deeply anesthetized with the gas anesthesia. According to the dependency of cell numbers against the plasma irradiation time, when only He gas was flowed, the growth of cells was inhibited as the floatation of cells caused by gas agitation inside the culture was promoted. On the other hand, there was no floatation of cells and healthy growth was observed when plasma was irradiated. Furthermore, in an experiment testing the effects of plasma irradiation on rats that were artificially given burn wounds, no evidence of electric shock injuries was found in the irradiated areas. In fact, the observed evidence of healing and improvements of the burn wounds suggested the presence of healing effects due to the growth factors in the tissues. Therefore, it appears that the interaction due to ion/radicalcollisions causes a substantial effect on the proliferation of growth factors such as epidermal growth factor (EGF), nerve growth factor (NGF), and transforming growth factor (TGF) that are present in the cells.
Journal of the Korean Institute of Electrical and Electronic Material Engineers
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v.34
no.6
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pp.442-448
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2021
In this work, the (K1-xAgx)(Ta0.8Nb0.2)O3 (x=0.1-0.4) ceramics were fabricated using mixed-oxide method, and their structural and electrical properties were measured. All specimens represented a pseudo cubic structure with the lattice constant of 0.3989 nm. When 0.4 mol of Ag was added, second phases induced from metallic Ag and K2(Ta,Nb)6O16 phase were observed. Dielectric constant and dielectric loss of K(Ta0.8Nb0.2)O3 specimen doped with 0.3 mol of Ag were 2,737 and 0.446, respectively. The curie temperature was about -5℃, which does not change with Ag addition. The remanent polarization began to decrease sharply around 12~15℃, and the temperature at which the remanent polarization began to decrease as the applied voltage increased shifted to the high temperature side. The electrocaloric effect (ΔT) and electrocaloric efficiency (ΔT/ΔE) of the (K0.7Ag0.3)(Ta0.8Nb0.2)O3 ceramics were 0.01024℃ and 0.01825 KmV-1, respectively.
This study aimed to determine the effects of the shape and attachment position of stretchable textile sensors coated with carbon nanotube on their performance when used to measure children's joint movements. Moreover, the child-safe requirements for fabric motion sensors are established. The child participants were advised to wear integrated clothing equipped with the sensors of various shapes (rectangular and boat-shaped) and attachment positions (at the knee and elbow joints or 4 cm below the joints). The voltage change induced by the elongation and contraction of the fabric sensors was determined for arm and leg flexion-extension motions at 60 deg/s (three measurements of 10 repeats each for 60°and 90°angles, for a total of 60 repetitions). Their dependability was determined by comparing the fabric motion sensors to the associated acceleration sensors. The experimental results indicate that the rectangular-shaped sensor affixed 4 cm below the joint is the most effective fabric motion sensor for measuring children's arm and leg motions. In this study, we designed a textile sensor capable of tracking children's joint motion and analyzed the sensor shape and attachment position on motion sensing clothing. We demonstrated that flexible fabric sensors integrated into garments may be used to detect the joint motions of the human body.
Graphite has been used as an anode material for lithium-ion batteries for the past 30 years due to its low de-/lithiation voltage, high theoretical capacity of 372 mAh/g, low price, and long life properties. Recently, all-solid-state lithium-ion batteries (ASSLB), which are composed of inorganic solid materials with high stability, have received great attention as electric vehicles and next-generation energy storage devices, but research works on graphite that works well for ASSLB systems are insufficient. Therefore, we induced the performance improvement of ASSLB anode electrode graphite material by removing the amorphous carbon present in the carbon material surface, acting as a resistive layer from the graphite. As a result of X-ray diffraction (XRD) analysis using heat treated graphite in air at 400, 500, and 600 ℃, the full width at half maximum (FWHM) at (002) peak was reduced compared to that of bare graphite, indicating that the crystallinity of graphite was improved after heat treatment. In addition, the discharge capacity, initial coulombic efficiency (ICE) and cycle stability increased as the crystallinity of graphite increased after heat treatment. In the case of graphite annealed in air at 500 ℃, the high capacity retention rate of 331.1 mAh/g and ICE of 86.2% and capacity retention of 92.7% after 10-cycle measurement were shown.
Khan, Md. Al-Masrur;Kim, Je-Kyoung;Yee, Jurng-Jae;Kee, Seong-Hoon
Journal of the Korea institute for structural maintenance and inspection
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v.26
no.6
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pp.82-92
/
2022
This study aims to investigate the effect of total electrochemical cell resistance (TECR) on electrochemical impedance (EI) measurements of reinforced concrete (RC) by electrochemical impedance spectroscopy (EIS) using a three-electrode system. A series of experimental study is performed to measure electrochemical behavior of a steel bar embedded in a concrete cube specimen, with a side length of 200 mm, in various experimental conditions. Main variables include concrete dry conditions, coupling resistance between sensing electrodes and concrete surface, and area of the counter electrode. It is demonstrated that EI values remains stable when the compliant voltage of a measuring device is sufficiently great compared to the potential drop caused by TECR of concrete specimens. It is confirmed that the effect of the coupling resistance of TECR is far more influential than other two factors (concrete dry conditions and area of the counter electrode). The results in this study can be used as a fundamental basis for development of a surface-mount sensor for corrosion monitoring of reinforced concrete structures exposed to wet-and-dry cycles under marine environment.
The Journal of the Institute of Internet, Broadcasting and Communication
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v.23
no.2
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pp.157-162
/
2023
Among the failures of photovoltaic power generation facilities, failures caused by surges account for 20% of the total failure rate, and energy emissions of tens to hundreds [A] during power generation and electrical damage to inverters and connection boards lead to electrical safety accidents. In particular, in the case of lightning, an abnormal voltage is induced in an electric circuit to destroy insulation, and the current flowing at this time causes a fire and acts as a factor that accelerates the deterioration of parts. Due to this action, the problem of electrical safety of solar power generation devices spreading from outside the city center to the inside of the city center such as houses, apartments, and government offices is emerging. Since lightning strikes cause both field-based and conducted electrical interference, this effect increases with increasing cable length or conductor loops. In addition, surge damages not only solar modules, inverters and monitoring devices, but also building facilities, which can eventually cause operational shutdown due to fire of the photovoltaic power generation system and consequent financial loss. Therefore, in this paper, a lightning protection system for solar power generation devices is studied for the purpose of reducing property damage and human casualties due to the increase in fire and electrical safety accidents caused by lightning strikes in photovoltaic power generation systems.
Eun Mi Hwang;Bo Hyun Lee;Eun Hye Byun;Soomin Lee;Dawon Kang;Dong Kun Lee;Min Seok Song;Seong-Geun Hong
The Korean Journal of Physiology and Pharmacology
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v.27
no.4
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pp.417-426
/
2023
The TRPM4 gene encodes a Ca2+-activated monovalent cation channel called transient receptor potential melastatin 4 (TRPM4) that is expressed in various tissues. Dysregulation or abnormal expression of TRPM4 has been linked to a range of diseases. We introduced the hemagglutinin (HA) tag into the extracellular S6 loop of TRPM4, resulting in an HA-tagged version called TRPM4-HA. This TRPM4-HA was developed to investigate the purification, localization, and function of TRPM4 in different physiological and pathological conditions. TRPM4-HA was successfully expressed in the intact cell membrane and exhibited similar electrophysiological properties, such as the current-voltage relationship, rapid desensitization, and current size, compared to the wild-type TRPM4. The presence of the TRPM4 inhibitor 9-phenanthrol did not affect these properties. Furthermore, a wound-healing assay showed that TRPM4-HA induced cell proliferation and migration, similar to the native TRPM4. Co-expression of protein tyrosine phosphatase, non-receptor type 6 (PTPN6 or SHP1) with TRPM4-HA led to the translocation of TRPM4-HA to the cytosol. To investigate the interaction between PTPN6 and tyrosine residues of TRPM4 in enhancing channel activity, we generated four mutants in which tyrosine (Y) residues were substituted with phenylalanine (F) at the N-terminus of TRPM4. The YF mutants displayed properties and functions similar to TRPM4-HA, except for the Y256F mutant, which showed resistance to 9-phenanthrol, suggesting that Y256 may be involved in the binding site for 9-phenanthrol. Overall, the creation of HA-tagged TRPM4 provides researchers with a valuable tool to study the role of TRPM4 in different conditions and its potential interactions with other proteins, such as PTPN6.
Journal of the Institute of Electronics Engineers of Korea SD
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v.43
no.3
s.345
/
pp.21-32
/
2006
A new SRAM circuit with row-by-row activation and low-swing write schemes is proposed to reduce switching power of active cells as well as leakage one of sleep cells in this paper. By driving source line of sleep cells by $V_{SSH}$ which is higher than $V_{SS}$, the leakage current can be reduced to 1/100 due to the cooperation of the reverse body-bias. Drain Induced Barrier Lowering (DIBL), and negative $V_{GS}$ effects. Moreover, the bit line leakage which may introduce a fault during the read operation can be eliminated in this new SRAM. Swing voltage on highly capacitive bit lines is reduced to $V_{DD}-to-V_{SSH}$ from the conventional $V_{DD}-to-V_{SS}$ during the write operation, greatly saving the bit line switching power. Combining the row-by-row activation scheme with the low-swing write does not require the additional area penalty. By the SPICE simulation with the Berkeley Predictive Technology Modes, 93% of leakage power and 43% of switching one are estimated to be saved in future leakage-dominant 70-un process. A test chip has been fabricated using $0.35-{\mu}m$ CMOS process to verify the effectiveness and feasibility of the new SRAM, where the switching power is measured to be 30% less than the conventional SRAM when the I/O bit width is only 8. The stored data is confirmed to be retained without loss until the retention voltage is reduced to 1.1V which is mainly due to the metal shield. The switching power will be expected to be more significant with increasing the I/O bit width.
In field surveys using the dipole-dipole electrical resistivity method, we often encounter negative apparent resistivity. The term 'negative apparent resistivity' refers to apparent resistivity values with the opposite sign to surrounding data in a pseudosection. Because these negative apparent resistivity values have been regarded as measurement errors, we have discarded the negative apparent resistivity data. Some people have even used negative apparent resistivity data in an inversion process, by taking absolute values of the data. Our field experiments lead us to believe that the main cause for negative apparent resistivity is neither measurement errors nor the influence of self potentials. Furthermore, we also believe that it is not caused by the effects of induced polarization. One possible cause for negative apparent resistivity is the subsurface geological structure. In this study, we provide some numerical examples showing that negative apparent resistivity can arise from geological structures. In numerical examples, we simulate field data using a 3D numerical modelling algorithm, and then extract 2D sections. Our numerical experiments demonstrate that the negative apparent resistivity can be caused by geological structures modelled by U-shaped and crescent-shaped conductive models. Negative apparent resistivity usually occurs when potentials increase with distance from the current electrodes. By plotting the voltage-electrode position curves, we could confirm that when the voltage curves intersect each other, negative apparent resistivity appears. These numerical examples suggest that when we observe negative apparent resistivity in field surveys, we should consider the possibility that the negative apparent resistivity has been caused by geological structure.
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