• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전력기술부문
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• pp.216-218
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• 2001

The transformer role is very important in power system operation and control; also its price is very expensive. Therefore many kinds of the efforts for transformer protection have been executed. So for as, current differential relay(87) has been mainly used for transformer protection. But current differential relaying method has several troubles as followings. Differential current can be occurred by transformers inrush current between winding1 and winding2 of transformer when transformer is initially energized. Also harmonic restrained element used in current differential relaying method is one of the causes of relays mal-operation because recently harmonics in power system gradually increase by power switching devices(SVC, FACTS, DSC, etc). Therefore many kinds of effort have been executed to solve the trouble of current differential relay and one of them is method using ratio of increment of flux linkages(RIFL) of the primary and secondary windings. This paper introduces a novel protective relay for power transformers using RIFL of the primary and secondary windings. Novel protective relay successfully discriminates between transformer internal faults and normal operation conditions including inrush and this paper includes real time test results using RTDS(Real Time Digital Simulator) for novel protective relay. A novel protective relay was designed using the TMS320C32 digital signal processor and consisted of DSP module. A/D converter module, DI/DO module, MMI interface module and LCD display module and developed by Xelpower co., Ltd.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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• pp.741-742
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• 2006

This paper deals with an efficient superconducting joint method between 2G high superconducting(HTS) wire, YBCO coated conductor(CC). Recently CC is one of the most promising superconducting wire due to high n-value and critical current independency from external magnetic field. It is expected to be used many superconducting application such as fault current limiter, persistent current system and cable etc. In most HTS applications, superconducting magnet is used, and it is necessary to joint between superconducting wire to fabricate superconducting magnet system. A CC tape used in this research consists of copper stabilizer, silver layer, YBCO layer, buffer and substrate. Direct joint using soldering method was inefficient due to resistance of copper, then copper lamination is removed by chemical etching method to reduce resistance between CC tapes. Jointed tapes were fabricated and tested. Transport current through jointed area and induced voltage were measured to characterize the I-V curve. Resistance between CC wire using chemical etching was compared with resistance of direct jointed tapes using soldering method in this paper.

• 한국세라믹학회지
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• 제43권5호
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• pp.270-276
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• 2006

LSGM(($La_xSr_{1-x})(Ga_yMg_{1-y})O_3$) electrolyte is known to show very serious interfacial reaction with other unit cell components, especially with an anode. Such an interfacial reaction induced the phase instability of constituent component and deterioration of the unit cell performance, which become the most challenging issues in LSGM-based SOFCs. In this study, we fabricated LSGM($La_{0.8}Sr_{0.2}Ga_{0.83}Mg_{0.17}O_x$) electrolyte supported-type cell in order to avoid such interfacial problem by lowering the heat-treatment temperature of the electrode fabrication. According to the microstructural and phase analysis, there was no serious interfacial reaction at both electrolyte/anode and electrolyte/cathode interfaces. Moreover, from the electrochemical characterization of the unit cell performance, there was no distinct deterioration of the open cell voltage as well as an internal cell resistance. These results demonstrate the most critical point to be concerned in LSGM-based SOFC is either to find a proper electrode material which will not give any interfacial reaction with LSGM electrolyte or to properly adjust the processing variables for unit cell fabrication, to reduce the interfacial reaction.

• 해양환경안전학회지
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• 제10권1호
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• pp.51-54
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• 2004

최근 양어 양식장은 증가하고 있으며 이러한 곳에 사용할 가열장치는 경울 수온 조절을 위해 사용된다. 해수 가열장치는 부식성이 높고 압력이 높은 곳에 사용하기 위하여 고강도와 내식성이 요구된다. 만약 저강도와 저내식성을 갖게 되면 결국 누설 또는 파손되어 해수오염을 일으킬 수 있다. 대부분의 부식은 정체된 액과 틈이 형성된 부위에서 부식의 발생이 일어난다. 이 연구에서는 430 스테인레스재를 크기 $15{\times}20{\times}3mmt$에 대하여 1N H2SO4 + 0.05N NaCl용액을 사용하여 틈부식을 시험하였다. 틈의 크기는 $0.24{\times}3{\times}15mmL$로 하였으며 외부에 300mV전위를 인가하였다. 실험 결과 틈 부식 유기 시간은 750초로 나타나고, 틈 전위 강화는 -320에서 -399mV로 나타나 부식의 주 원인이 전위강화 기구에 의해 발생하였다.

• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.23-29
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• 2020

Electrochromic (EC) device is an element whose transmittance is changed by electrical energy. Coloring and decoloring states can be easily controlled and thus used in buildings and automobiles for energy saving. There exist several types of EC devices; EC using electrolytes, polymer dispersed liquid crystal (PDLC), and suspended particle device (SPD) using polarized molecules. However, these devices involve solutions such as electrolytes and liquid crystals, limiting their applications in high temperature environments. In this study, we have studied all-solid-state EC device based on Tin(IV) oxide (SnO₂). A coloring phase is achieved when electrons are accumulated in the ultraviolet (UV)-treated SnO₂ layer, whereas a decoloring mode is obtained when electrons are empty there. The UV treatment of SnO₂ layer brings in a number of localized states in the bandgap, which traps electrons near the conduction band. The SnO₂-based EC device shows a transmittance of 70.7% in the decoloring mode and 41% in the coloring mode at a voltage of 2.5 V. We have achieved a transmittance change as large as 29.7% at the wavelength of 550 nm. It also exhibits fast and stable driving characteristics, which have been demonstrated by the cyclic experiments of coloration and decoloration. It has also showed the memory effects induced by the insulating layer of titanium dioxide (TiO₂) and silicone (Si).

• Korean Chemical Engineering Research
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• 제49권6호
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• pp.704-709
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• 2011

접촉글로우방전 전기분해(CGDE)에 의한 후코이단의 저분자화에 대해 연구하였다. CGDE 공정 후에 후코이단을 기능성 식품재료로 사용하기 위해 유기산을 전해질로 사용하였다. 실험결과 유기산을 이용한 전기분해에 의해 후코이단의 분자량을 효과적으로 감소시킴을 보였다. 전해질의 농도가 증가하면 글로우방전 시작 전압이 감소하고 글로우방전시작 전류는 증가하였다. 반응시간에 따른 후코이단의 분자량 변화로부터 저분자화반응은 1차 반응속도 식을 따름을 보였다. 유기산을 이용한 CGDE에 의해 후코이단의 분자량이 처음의 약 1/77로 감소하였으며, CGDE 저분자화 과정에서 유리된 황산기 함량이 작았다.

• Journal of Magnetics
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• 제15권4호
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• pp.213-220
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• 2010

Since the hypothalamus immediately reacts to a nerve by processing all the information from the human body and the external stimulus being conducted, it performs a significant role in internal secretion; thus, a diverse and rapid stimulus pulse is required. By detecting Zero Detector accurately via the application of AVR on-Chip (ATMEL) using commercial electricity, chopping generates a stimulus pulse to the brain using an IGBT gate to designate a new magnetic stimulation following treatment and diagnosis. To simplify and generate a diverse range of stimuli for the brain, chopping can be used as a free magnetic stimulator. Then, commercial frequency (60Hz) is chopped precisely at the first level of the leakage transformer to deliver an appropriate stimulus pulse towards the hypothalamus when necessary. Discharge becomes stable, and the chopping frequency and duty-ratio provide variety after authorizing a high-pressure chopping voltage at the second level of the magnetic stimulator. These methods have several aims. The first is to apply a variable stimulus pulse via accurate switching frequency control by a voltaic pulse or a pulse repetition rate, according to the diagnostic purpose for a given hypothalamus. Consequently, the efficiency tends to increase. This experiment was conducted at a maximum of 210 W, a magnetic induced amplitude of 0.1~2.5 Tesla, a pulse duration of $200{\sim}350\;{\mu}s$, magnetic inducement of 5 Hz, stimulus frequency of 0.1~60 Hz, and a duration of stimulus train of 1~10 sec.

• Journal of the Optical Society of Korea
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• 제13권1호
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• pp.65-74
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• 2009

Device quality indium tin oxide (ITO) films are deposited on glass substrates and ultra-thin diamond-like carbon films are deposited as a buffer layer on ITO by a pulsed Nd:YAG laser at 355 nm and 532 nm wavelength. ITO films deposited at room temperature are largely amorphous although their optical transmittances in the visible range are > 90%. The resistivity of their amorphous ITO films is too high to enable an efficient organic light-emitting device (OLED), in contrast to that deposited by a KrF laser. Substrate heating at $200^{\circ}C$ with laser wavelength of 355 nm, the ITO film resistivity decreases by almost an order of magnitude to $2{\times}10^{-4}\;{\Omega}\;cm$ while its optical transmittance is maintained at > 90%. The thermally induced crystallization of ITO has a preferred <111> directional orientation texture which largely accounts for the lowering of film resistivity. The background gas and deposition distance, that between the ITO target and the glass substrate, influence the thin-film microstructures. The optical and electrical properties are compared to published results using other nanosecond lasers and other fluence, as well as the use of ultra fast lasers. Molecularly doped, single-layer OLEDs of ITO/(PVK+TPD+$Alq_3$)/Al which are fabricated using pulsed-laser deposited ITO samples are compared to those fabricated using the commercial ITO. Effects such as surface texture and roughness of ITO and the insertion of DLC as a buffer layer into ITO/DLC/(PVK+TPD+$Alq_3$)/Al devices are investigated. The effects of DLC-on-ITO on OLED improvement such as better turn-on voltage and brightness are explained by a possible reduction of energy barrier to the hole injection from ITO into the light-emitting layer.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.8-22
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• 2014

In the past few decades, CMOS logic technologies and devices have been successfully developed with the steady miniaturization of the feature size. At the sub-30-nm CMOS technology nodes, one of the main hurdles for continuously and successfully scaling down CMOS devices is the parametric failure caused by random variations such as line edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV). The characteristics of each random variation source and its effect on advanced device structures such as multigate and ultra-thin-body devices (vs. conventional planar bulk MOSFET) are discussed in detail. Further, suggested are suppression methods for the LER-, RDF-, and WFV-induced threshold voltage (VTH) variations in advanced CMOS logic technologies including the double-patterning and double-etching (2P2E) technique and in advanced device structures including the fully depleted silicon-on-insulator (FD-SOI) MOSFET and FinFET/tri-gate MOSFET at the sub-30-nm nodes. The segmented-channel MOSFET (SegFET) and junctionless transistor (JLT) that can suppress the random variations and the SegFET-/JLT-based static random access memory (SRAM) cell that enhance the read and write margins at a time, though generally with a trade-off between the read and the write margins, are introduced.

• International Journal of Precision Engineering and Manufacturing
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• 제8권2호
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• pp.44-48
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• 2007

In recent years, the size of plane substrates and semiconductor wafers has increased. As conventional contact transportation systems composed of, for example, carrier rollers, belt conveyers, and robot hands carry these longer and wider substrates, the increased weight results in increased potential for fracture. A noncontact transportation system is required to solve this problem. We propose a new noncontact transportation system combining acoustic viscous and aerostatic forces to provide damage-free transport. In this system, substrates are supported by aerostatic force and transported by acoustic viscous streaming induced by traveling wave deformation of a disk-type stator. A ring-type piezoelectric transducer bonded on the stator excites vibration. A stator with a high Q piezoelectric transducer can generate traveling vibrations with amplitude of $3.2{\mu}m$. Prior to constructing a carrying road for substrates, we clarified the basic properties of this technique and stator vibration characteristics experimentally. We constructed the experimental equipment using a rotational disk with a 95-mm diameter. Electric power was 70 W at an input voltage of 200 Vpp. A rotational torque of $8.5\times10^{-5}Nm$ was obtained when clearance between the stator and disk was $120{\mu}m$. Finally, we constructed a noncontact transport apparatus for polycrystalline silicon wafers $(150(W)\times150(L)\times0.3(t))$, producing a carrying speed of 59.2 mm/s at a clearance of 0.3 mm between the stator and wafer. The carrying force when four stators acted on the wafer was $2\times10^{-3}N$. Thus, the new noncontact transportation system was demonstrated to be effective.