• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.159-159
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• 2008

Indium-tin oxides (ITO) films have been widely used as transparent electrodes for optoelectronic devices such as organic light emitting diodes (OLEDs), photovoltaics, touch screen devices, and flat-paneldisplay. In particular, to improve hole injection efficiency in OLEDs, transparent electrodes should have high work-function besides their transparency and low resistivity. Nevertheless, few studies have been made on engineering the work function of ITO for use as an efficient anode. In this study, the effects of a wide range of Nb or Zn doping rate on the changes in work functions of ITO anode were investigated. The Nb or Zn doped ITO films were fabricated on glass substrates using combinatorial sputtering system which yields a linear composition spread of Nb or Zn concentration in ITO films in a controlled manner by co-sputtering two targets of ITO and Nb2O5 or ITO and ZnO. We have also examined the resistivity, transmittance, and other structural properties of the Nb or Zn-doped ITO films. Furthermore, OLEDs employing Nb or Zn-doped ITO anodes were fabricated and the device performances were investigated concerned with the work function changes.

• Journal of the Korean institute of surface engineering
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• v.47 no.3
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• pp.109-115
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• 2014

High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak power density in a short period, you can get high, so high ionization sputtering rate can make. Higher ionization of sputtered species to a variety of coating materials conventional in the field of improving the characteristics and self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the same power, but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacement for HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered species can increase the deposition rate is lowered and at the same time to overcome the problems to be reported. The differences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas, MPP is 3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulse is applied can be micro advantages. In this experiment, $In_2O_3$ : $SnO_2$ composition ratio of 9 : 1 wt% target was used, Ar : $O_2$ flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of $O_2$ and then fixed 2 ~ 6 sccm was compared against that. The thickness of the thin film deposition is fixed at 60 nm, when the partial pressure of oxygen at 9.1%, the specific resistance value of $4.565{\times}10^{-4}{\Omega}cm$, transmittance 86.6%, mobility $32.29cm^2/Vs$ to obtain the value.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.233-239
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• 2002

Reflection properties of $SiO_2$/ITO (Indium Tin Oxide) thin films coated for electromagnetic shielding, anti-static and anti-reflection on the front surface in CRT were studied. The behavior of reflectance as a function of thickness of $SiO_2$/ITO was investigated and applied to theoretical anti0reflection model of double layers and three layers. As the thickness of ITO layer increased, the deviation from theoretical value increased because uniformity of film deteriorated by pore. Because of the effect of mixed layer of $SiO_2$ and ITO, experimental reflectance showed better acceptance to the three layer antireflection model of $SiO_2$/$SiO_2$+ITO/ITO than the two layer model. Based on the theoretical antireflection design, the double layer whose thickness of $SiO_2$ and ITO were 90, 65 nm, respectively appear 2.5% in reflectance at standard wavelength, 550 nm. This phenomenon was similar to theoretical reflectance in visual range.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.151-153
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• 2005

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) by the change of process parameters for the improvement of electrical and optical properties of ITO thin film. Light transparent efficiency of ITO thin film was improved after CMP process at the optimized process parameters compared to that before CMP process.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.172-172
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• 2009

전자부품 소재의 경량화 및 연성화 경향에 따라 고분자 소재의 수요가 증가하고 있으며 이에 따라 각종 디스플레이 소자의 투명 도전막으로 사용되는 ITO(Indium-tin Oxide) 피막의 저온 박막 성장에 대한 관심이 증가하고 있다. 본 연구에서는 PET 기판의 전처리 및 후처리 조건에 따라 저온에서 ITO 피막을 제조하고 전처리 및 후처리 조건이 ITO 피막의 면저항 및 투과율 그리고 결정성에 미치는 영향에 대해서 연구하였다.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.213-213
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• 2000

A sensor system which can measure the transmittance of ITO(Indium Tin Oxide) layed glass is proposed. The sensor system includes a single wavelength laser beam source, photo diodes and electronic circuit processing sensor signal. The wavelength of laser is 543.5 m, this is most sensitive wavelength to photopic and scotopic vision. We applied the sensor to measure transmittance of ITO layer on general manufacturing environment and verified the effectiveness of sensor through experimental measurement.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.467-470
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• 2007

Ultrafine Indium tin oxide (ITO) nanoparticle was successfully fabricated by low temperature synthetic method (LTSM). Mean size of ITO nanoparticle is 5 nm, and uniformly dispersed with (222) orientated cubic structure. Using the nanoparticle, ITO thin film with good optical and electrical properties was fabricated by inkjet printing.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.440-446
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• 2009

Indium tin oxide(ITO) substrate is one of the key components of the touch panel and its sputtering process is dependent on the characteristics of various touch panel, such as driving type, size of panel, and the intended use. In this study, we optimized the sputtering condition of ITO film on polycarbonate(PC) by using in-line sputtering method for the application to resistive type touch panel. We varied the $O_2$/Ar gas ratio, sputtering power, pressure and moving speed of substrate to deposit ITO films at room temperature with the base vacuum of $1{\times}10^{-6}\;torr$. The sheet resistance and its uniformity, the transmittance, the thickness of the ITO film on PC substrate are investigated and analyzed. The optimized process parameters are as follows : the sheet resistance is $500{\pm}50\;{\Omega}$/□, the uniformity of sheet resistance is lower than 10%, the transmittance is higher than 87 % at 550nm, and the thickness is about 120~250. The optimized deposition conditions by in-line sputtering method can be applied to the actual mass production for the ITO film manufacturing technology.

• Toxicological Research
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• v.30 no.1
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• pp.55-63
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• 2014

Objectives: The use of indium compounds, especially those of small size, for the production of semiconductors, liquid-crystal panels, etc., has increased recently. However, the role of particle size or the chemical composition of indium compounds in their toxicity and distribution in the body has not been sufficiently investigated. Therefore, the aim of this study was to examine the effects of particle size and the chemical composition of indium compounds on their toxicity and distribution. Methods: Male Sprague-Dawley rats were exposed to two different-sized indium oxides (average particle sizes under 4,000 nm [IO_4000] and 100 nm [IO_100]) and one nano-sized indium-tin oxide (ITO; average particle size less than 50 nm) by inhalation for 6 hr daily, 5 days per week, for 4 weeks at approximately $1mg/m^3$ of indium by mass concentration. Results: We observed differences in lung weights and histopathological findings, differential cell counts, and cell damage indicators in the bronchoalveolar lavage fluid between the normal control group and IO- or ITO-exposed groups. However, only ITO affected respiratory functions in exposed rats. Overall, the toxicity of ITO was much higher than that of IOs; the toxicity of IO_4000 was higher than that of IO_100. A 4-week recovery period was not sufficient to alleviate the toxic effects of IO and ITO exposure. Inhaled indium was mainly deposited in the lungs. ITO in the lungs was removed more slowly than IOs; IO_4000 was removed faster than IO_100. IOs were not distributed to other organs (i.e., the brain, liver, and spleen), whereas ITO was. Concentrations of indium in the blood and organ tissues were higher at 4 weeks after exposure. Conclusions: The effect of particle size on the toxicity of indium compounds was not clear, whereas chemical composition clearly affected toxicity; ITO showed much higher toxicity than that of IO.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.53-57
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• 2017

The most representative transparent electrode in the modern society is ITO (Indium Tin Oxide). ITO is widely used in general for touch panels and displays due to its high electrical and optical properties. However, in general, mechanical deformation causes deterioration and destruction of device properties because ITO is basically vulnerable to mechanical deformation. Therefore, the in-depth understanding on the stability of ITO film during various mechanical deformations is necessary. In this study, the reliability and mechanical properties ITO sample having different length, width, and area were investigated. The electrical stability was estimated according to electrical resistance change. The stability was dropped as the sample length, and width increased and the sample area decreased. The electrical stability of ITO film was correlated with twisting strain including tensile, compressive and shear stress.